EN 61643-321-2002 en Components for Low-Voltage Surge Protective Devices Part 321 Specifications for Avalanche Breakdown Diode (ABD)《低压电涌保护装置用元部件 第321部分 雪崩击穿二极管(ABD)规范 IEC 61643-32.pdf

《EN 61643-321-2002 en Components for Low-Voltage Surge Protective Devices Part 321 Specifications for Avalanche Breakdown Diode (ABD)《低压电涌保护装置用元部件 第321部分 雪崩击穿二极管(ABD)规范 IEC 61643-32.pdf》由会员分享，可在线阅读，更多相关《EN 61643-321-2002 en Components for Low-Voltage Surge Protective Devices Part 321 Specifications for Avalanche Breakdown Diode (ABD)《低压电涌保护装置用元部件 第321部分 雪崩击穿二极管(ABD)规范 IEC 61643-32.pdf（20页珍藏版）》请在麦多课文档分享上搜索。

1、BRITISH STANDARD Components for low-voltage surge protective devices Part 32 1 : Specifications for avalanche breakdown diode (ABD) The European Standard EN 61643-321:2002 has the status ofa British Standard ICs 29.120.50; 3 1.080.10 BS EN 61 643-32 1 2002 Wk present to the responsible international

2、/European committee any enquiries on the interpretation, or proposals for change, and keep the UK interests informed; monitor related international and European developments and promulgate them in the UK. - A list of organizations represented on this committee can be obtained on request to its secre

3、tary. From 1 January 1997, all IEC publications have the number 60000 added to the old number. For instance, IEC 27-1 has been renumbered as IEC 60027-1. For a period oftime during the change over from one numbering system to the other, publications may contain identifiers from both systems. Cr oss-

4、r e fer enc e s Attention is drawn to the fact that CEN and CENELEC Standards normally include an annex which lists normative references to international publications with their corresponding European publications. The British Standards which implement international or European publications may be f

5、ound in the BSI Standards Catalogue under the section entitled Tnternational Standards Correspondence Index”, or by using the Find” facility of the BSI Standards Electronic Catalogue. A British Standard does not purport to include all the necessary provisions of a contract. Users of British Standard

6、s are responsible for their correct application. Compliance with a British Standard does not of itself confer immunity from legal obligations. Summary of pages This document comprises a front cover, an inside front cover, the EN title page, pages 2 to 17 and a back cover. The BSI copyright date disp

7、layed in this document indicates when the document was last issued. O BSI 21 March 2002 ISBN O 580 39230 9 EUROPEAN STANDARD EN 61643-321 NORME EUROPENNE EUROPISCHE NORM Februarv 2002 ICs 31.080.10 English version Components for low-voltage surge protective devices Part 321 : Specifications for aval

8、anche breakdown diode (ABD) (IEC 61643-321 12001) Com posan ts pour parafoudres basse tension Partie 321 : Spcifications pour les diodes avalanche (ABD) (CE1 61643-321 12001) Bauelemente fr berspannungs- sch utzgerte fr Niederspannung Teil 321 : Festlegungen fr Ava I a n c h e- D i od e n (AB D) (IE

9、C 61643-321 12001) This European Standard was approved by CENELEC on 2002-02-01. CENELEC members are bound to comply with the CENKENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration. Up-to-date lists an

10、d bibliographical references concerning such national standards may be obtained on application to the Central Secretariat or to any CENELEC member. This European Standard exists in three official versions (English, French, German). A version in any other language made by translation under the respon

11、sibility of a CENELEC member into its own language and notified to the Central Secretariat has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Czech Republic, Denmark, Finland, France, Germany, Greece, Iceland, Ireland, Ital

12、y, Luxembourg, Malta, Netherlands, Norway, Portugal, Spain, Sweden, Switzerland and United Kingdom. CENELEC European Committee for Electrotechnical Standardization Comit Europen de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnische Normung Central Secretariat: rue de Stassart 35

13、, B - 1050 Brussels O 2002 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members. Ref. No. EN 61643-321:2002 E Page 2 EN 61643-3212002 Foreword The text of document 37B/59/FDIS, future edition 1 of IEC 61 643-321, prepared by SC 37B, Specific compon

14、ents for surge arresters and surge protective devices, of IEC TC 37, Surge arresters, was submitted to the IEC-CENELEC parallel vote and was approved by CENELEC as EN 61643-321 on 2002-02-01. The following dates were fixed: - latest date by which the EN has to be implemented at national level by pub

15、lication of an identical national standard or by endorsement - latest date by which the national standards conflicting with the EN have to be withdrawn Annexes designated “normative“ are part of the body of the standard. In this standard, annex ZA is normative. Annex ZA has been added by CENELEC. (d

16、op) 2002-1 1-01 (dow) 2005-02-01 Endorsement not i ce The text of the International Standard IEC 61643-321:2001 was approved by CENELEC as a European Standard without any modification. O BSI 21 March 2002 Page 3 EN 61643-3212002 CONTENTS 1 Scope . . 4 2 Normative references . 4 3 Definitions and sym

17、bols . 4 4 Basic function and description for ABDs . 7 5 Service condition 6 Standard test met 6.1 Standard design test criteria . 9 6.2 Test conditions . 9 6.3 Clamping vo 6.4 Rated peak i 6.5 Maximum working voltage VWM and maximum working r.m.s. voltage VWMrms . (see figure 3) . 10 6.6 Stand-by c

18、urrent ID (see figure 3) . 11 Breakdown (avalanche) voltage VBR (see figure 4) 6.8 Capacitance Cj . 12 6.9 Rated peak impulse power dissipation Ppp 12 6.1 1 Forward voltage VF 12 6.7 . 11 6.10 6.12 Temperature coefficient of breakdown voltage VBR 13 6.13 Temperature derating (see figure 5) 13 6.14 T

19、hermal resistance - ambient air temperature within the range of -40 “C to +85 “C for outdoor elements and within the range of -20 “C to +70 “C for indoor elements (see IEC 60364); - solar or other radiation (see IEC 60364-3); - relative humidity under normal temperature conditions (see IEC 60068); -

20、 indoor relative humidity can be up to 90 % or as directed; - exposure of the SPDC to abnormal service conditions may require special considerations in the design and application of the ABD, and should be called to the attention of the manufacturer; - other considerations to be specified by the diod

21、e manufacturer: maximum continuous diode voltage, peak impulse power or current temperature derating, peak impulse current rating, transient repetition rating, solvent resistance, solderability and flammability. 6 Standard test methods and procedures 6.1 Standard design test criteria Characteristic

22、parameter tests are described in 6.3 through 6.8. Rating parameter tests are described in 6.9 through 6.1 9. Characteristic parameters are inherent and measurable property of the ABD. Rating parameters are values to establish either a limiting capability or limiting condition of the ABD. Tests in 6.

23、3 through 6.8 provide standardized methods for measuring specified parameters of an ABD for the purpose of component selection for a surge protective device (SPD). These parameters may vary from device to device, making it necessary to measure all components to be selected for a SPD. Bidirectional A

24、BDs shall be tested with both positive and negative voltages. 6.2 Test conditions The tests of 6.3 through 6.8, performed on the device, are required for its application. Unless otherwise specified, ambient test conditions shall be as follows: - temperature: 25 “C f 5 OC; - relative humidity: less t

25、han 85 %; - air pressure: 86 kPa to 106 kPa (IEC 60749). NOTE and appropriate caution should be taken when performing them. Due to the voltage and energy levels employed in these tests, all tests should be considered hazardous, O BSI 21 March 2002 Page 10 EN 61643-3212002 6.3 Clamping voltage - VC (

26、see figure 2) 6.3.1 The purpose of this test is to determine the voltage protection level provided by the ABD when conducting a current impulse Ipp of specified waveform and peak amplitude. The device shall be tested in both voltage polarities unless otherwise specified. L R2 C V CRO R4 PS I IEC 245

27、9/07 Components PS Charging supply RI Charging resistor SI Charging switch R2 Impulse shaping and current limiting resistor R3 Impulse shaping resistor R4 Current sensing resistor (coaxial). Alternatively a current transformer or probe of adequate rating C Impulse shaping capacitor may be used S2 Im

28、pulse discharge switch DUT Device under test (ABD) L Impulse shaping inductor V Peak reading voltmeter CRO Oscilloscope for observing current and voltage CAUTION The circuit shown is for description only. Measurement techniques for high-current, high-frequency testing shall be observed, such as four

29、-point Kelvin contact, differential oscilloscope, short leads, etc. Figure 2 - Test circuit for clamping voltage V, peak impulse current Ipp, and rated forward surge current IFSM 6.3.2 To verify the volt-ampere characteristics curve, the clamping voltage shall be measured at two current levels. The

30、peak clamping voltage and peak test current are not necessarily coincident in time. In the absence of specified requirements, test currents shall be 0,2 Ipp and Ipp using a 10/1 O00 (or 8/20) waveshape. 6.4 The purpose of this test is to verify that an ABD design meets a specific number of current i

31、mpulses without causing device failure. The multiple peak impulse current rating shall be verified by subjecting the device to a 10/1 O00 (or 8/20) current waveform. The impulse currents shall be applied once every 45 s. For symmetrical devices, a single polarity shall be tested for the 10 consecuti

32、ve pulses. The failure criteria of clause 7 shall apply. Rated peak impulse current Ipp (see figure 2) 6.5 Maximum working voltage VWM and maximum working r.m.s. voltage VWM (see figure 3) The purpose of this test is to verify the maximum voltage that may be applied across an ABD over a specified te

33、mperature range without causing device failure. The manufacturer specifies the maximum stand-by current that is applied to the ABD. The rated working r.m.s. voltage applies only to symmetrical, bidirectional ABD components. O BSI 21 March 2002 Page 11 EN 61643-3212002 IEC 2460/07 Components PS A DUT

34、 Unidirectional device under test DUT, Bidirectional device under test v Adjustable d.c. voltage power supply (a.c. supply if an a.c. test) Microammeter d.c. (a.c. ammeter if an a.c. test) Digital voltmeter (substitute an oscilloscope if an a.c. test) Figure 3 -Test circuit for verifying maximum wor

35、king voltage VWM stand-by current ID and maximum working r.m.s. voltage VWM 6.6 The purpose of this test is to verify the stand-by current level of an ABD at temperatures specified by the manufacturer. The maximum working voltage VWM shall be generated by a well-regulated d.c. power supply and shall

36、 be impressed across the device. The stand-by current shall be measured after the voltage has been applied for at least 10 ms to allow stabilization of the conduction. Stand-by current ID (see figure 3) 6.7 6.7.1 The ABD shall be tested at a specified pulse d.c. current and at a specified temperatur

37、e. The time of applied test current IBR or IT shall be less than 400 ms. Breakdown (avalanche) voltage VBR (see figure 4) 6.7.2 This electrical characteristic is indicated as a minimum voltage range for the specified test current. In the absence of a specified requirement, it is recommended that the

38、 test current IBR or IT be at 1 mA. Low voltage or higher power devices may be specified at higher test currents. IEC 2467/07 Components P Pulsed constant current supply DUT Unidirectional device under test DUT1 Bidirectional device under test v Digital voltmeter Figure 4 - Test circuit for verifyin

39、g breakdown (avalanche) voltage VBR O BSI 21 March 2002 Page 12 EN 61643-3212002 6.8 Capacitance Cj The purpose of this test is to determine the ABD capacitance between two of the terminals. The capacitance between specified terminals shall be measured at a specified sinusoidal frequency and bias vo

40、ltage. For multiple terminals, one pair of terminals shall be measured at a time; all terminals not involved in the test shall be guarded to remove their capacitance from the measurement. In the absence of specified requirements, a signal of 0,l V r.m.s. or less at a frequency of 1 MHz and a bias of

41、 O V d.c. are suggested. 6.9 Rated peak impulse power dissipation Ppp The purpose of this test is to verify the manufacturers power rating under specific test conditions. This rating is specified by the manufacturer for each product. Verification of the parameter requires the application of the rate

42、d peak impulse current lpp and measuring the clamping voltage VC. Multiplication of the peak impulse current by the clamping voltage is defined as the peak pulse power dissipation. A sufficient number of devices shall be tested and the voltage-current characteristics shall be measured as described i

43、n 6.3 and 6.4 to obtain a statistical distribution within the desired confidence limits. 6.10 Rated forward surge current IFSM (see figure IC) The purpose of this test is to verify that an ABD, when subjected to a 10 ms (or 8,3 ms), single half-sine wave maximum peak current, meets a statistically e

44、xpressed level of reliability. The device shall be tested in accordance with figure 2 except that the unidirectional device is reversed. The surge is applied in the forward direction of the ABD (quadrant 1 of the V-l characteristic curve, figure IC). 6.11 Forward voltage VFS Peak value of the forwar

45、d voltage is measured by applying a 10 ms (or 8,3 ms) single half- sine wave maximum peak current in the forward direction of the ABD. Forward surge current IFS is a value of current that flows through the diode in the forward direction for a unidirectional ABD. - IEC 246201 Components P Pulsed cons

46、tant current supply DUT Device under test V Digital voltmeter A Ammeter Figure 5 - Test circuit for verifying forward voltage VFS O BSI 21 March 2002 Page 13 EN 61643-3212002 6.12 Temperature coefficient of breakdown voltage CXVBR The voltage temperature coefficient is the ratio of the change in bre

47、akdown voltage to the change in temperature. It may vary from device to device, but it is characteristic of a specific ABD independent of power ratings. This parameter shall be considered when operating over a temperature range. The breakdown voltage and maximum clamping voltage will vary over the t

48、emperature range and this variation can be expressed as a voltage temperature coefficient. For breakdown voltages above 5 V, this parameter will always be positive. A loo %/K VB R( test temperature ) - VB R( reference temperature ) ! VBR = VBR(reference temperature) fiest - Tref where reference temp

49、erature = actual ambient (25 OC f 3 OC) temperature test temperature = extreme temperature employed in the measurement. 6.13 Temperature derating (see figure 5) Temperature derating describes the variations in either peak pulse power or peak impulse current with increasing temperatures above a specified temperature level. Power derating applies to both peak pulse and steady-state (average) power conditions. See IEC 60747-2 for this test method. 6.14 Thermal resistance b) the thermal resistance of the device to the environment by leads and/or heatsink m