EN 60747-5-5-2011 en Semiconductor devices - Discrete devices - Part 5-5 Optoelectronic devices - Photocouplers (Incorporates Amendment A1 2015)《半导体器件 分立器件 第5-5部分 光电子器件 光电耦合器》.pdf

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1、BSI Standards PublicationSemiconductor devices Discrete devicesPart 5-5: Optoelectronic devices PhotocouplersBS EN 60747-5-5:2011+A1:2015National forewordThis British Standard is the UK implementation ofThe UK participation in its preparation was entrusted to Technical Committee EPL/47, Semiconducto

2、rs.A list of organizations represented on this committee can be obtained on request to its secretary.This publication does not purport to include all the necessary provisions of a contract. Users are responsible for its correct application. The British Standards Institution 2015.Published by BSI Sta

3、ndards Limited 2015ISBN 978 0 580 88066 7ICS 31.080.01; 31.260Compliance with a British Standard cannot confer immunity from legal obligations.This British Standard was published under the authority of the Standards Policy and Strategy Committee on 30 June 2011.Amendments/corrigenda issued since pub

4、licationDate Text affectedBRITISH STANDARDBS EN 60747-5-5:2011+A1:2015EN 60747-5-5:2011+A1:2015. It is identical to IEC 60747-5-5:2007, incorporating amendment 1:2013. It supersedes BS EN 60747-5-5:2011, which is withdrawn.The start and finish of text introduced or altered by amendment is indicated

5、in the text by tags. Tags indicating changes to IEC text carry the number of the IEC amendment. For example, text altered by IEC amendment 1 is indicated by .!“30 June 2015 Implementation of IEC amendment 1:2013 with CENELEC endorsement A1:2015EUROPEAN STANDARD EN 60747-5-5:2011+A1NORME EUROPENNE EU

6、ROPISCHE NORM CENELEC European Committee for Electrotechnical Standardization Comit Europen de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnische Normung Management Centre: Avenue Marnix 17, B - 1000 Brussels 2011 CENELEC - All rights of exploitation in any form and by any means

7、 reserved worldwide for CENELEC members. Ref. No. EN 60747-5-5:2011 E ICS 31.080.01; 31.260 English version Semiconductor devices - Discrete devices - Part 5-5: Optoelectronic devices - Photocouplers (IEC 60747-5-5:2007) Dispositifs semiconducteurs - Dispositifs discrets - Partie 5-5: Dispositifs op

8、tolectroniques - Photocoupleurs (CEI 60747-5-5:2007) Halbleiterbauelemente - Einzel-Halbleiterbauelemente - Teil 5-5: Optoelektronische Bauelemente -Optokoppler (IEC 60747-5-5:2007) This European Standard was approved by CENELEC on 2011-01-02. CENELEC members are bound to comply with the CEN/CENELEC

9、 Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the Central Secretariat or to any CENE

10、LEC member. This European Standard exists in three official versions (English, French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the Central Secretariat has the same status as the official versions.

11、 CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Rom

12、ania, Slovakia, Slovenia, Spain, Sweden, Switzerland and the United Kingdom. April 2015EN 60747-5-5:2011 Foreword The text of document 47E/332/FDIS, future edition 1 of IEC 60747-5-5, prepared by SC 47E, Discrete semiconductor devices, of IEC TC 47, Semiconductor devices, was submitted to the IEC-CE

13、NELEC parallel vote and was approved by CENELEC as EN 60747-5-5 on 2011-01-02. This EN 60747-5-5:2011 replaces the clauses for photocouplers (or optocouplers) described in EN 60747-5-1, EN 60747-5-2 and EN 60747-5-3, including their amendments. The contents for phototransistors and photothyristors i

14、n EN 60747-5-1, EN 60747-5-2 and EN 60747-5-3, including their amendments, will be considered obsolete as of the effective date of publication of this standard. NOTE Photocouplers that are certified to the previous version of the photocoupler standard, namely EN 60747-5-1/2/3, should be considered i

15、n compliance with the requirements and provisions of EN 60747-5-5. Attention is drawn to the possibility that some of the elements of this document may be the subject of patent rights. CEN and CENELEC shall not be held responsible for identifying any or all such patent rights. The following dates we

16、re fixed: latest date by which the EN has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2012-01-02 latest date by which the national standards conflicting with the EN have to be withdrawn (dow) 2014-01-02 Annex ZA has been added by CENEL

17、EC. _ Endorsement notice The text of the International Standard IEC 60747-5-5:2007 was approved by CENELEC as a European Standard without any modification. In the official version, for Bibliography, the following notes have to be added for the standards indicated: IEC 60270:2000 NOTE Harmonized as E

18、N 60270:2001 (not modified). IEC 60747-5-1:1997 NOTE Harmonized as EN 60747-5-1:2001 (not modified). IEC 60747-5-2:1997 NOTE Harmonized as EN 60747-5-2:2001 (not modified). IEC 60747-5-3:1997 NOTE Harmonized as EN 60747-5-3:2001 (not modified). _ BS EN 60747-5-5:2011 2 Foreword to amendment A1This d

19、ocument (EN 60747-5-5:2011/A1:2015) consists of the text of IEC 60747-5-5:2007/A1:2013 prepared by SC 47E “Discrete semiconductor devices” of IEC/TC 47 “Semiconductor devices“. The following dates are fixed: latest date by which the document has to be implemented at national level by publication of

20、an identical national standard or by endorsement (dop) 2016-01-19 latest date by which the national standards conflicting with the document have to be withdrawn (dow) 2018-01-19 Attention is drawn to the possibility that some of the elements of this document may be the subject of patent rights. CENE

21、LEC and/or CEN shall not be held responsible for identifying any or all such patent rights. Endorsement notice The text of the International Standard IEC 60747-5-5:2007/A1:2013 was approved by CENELEC as a European Standard without any modification. _ _ 3 EN 60747-5-5:2011 BS EN 60747-5-5:2011Annex

22、ZA (normative) Normative references to international publications with their corresponding European publications The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition

23、 of the referenced document (including any amendments) applies. NOTE When an international publication has been modified by common modifications, indicated by (mod), the relevant EN/HD applies. Publication Year Title EN/HD Year IEC 60065 (mod) 2001 Audio, video and similar electronic apparatus - Saf

24、ety requirements EN 60065 + corr. August + A11 2002 2007 2008 IEC 60068-1 1988 Environmental testing - Part 1: General and guidance EN 60068-11)194 IEC 60068-2-1 2007 Environmental testing - Part 2-1: Tests - Test A: Cold EN 60068-2-1 2007 IEC 60068-2-2 2007 Environmental testing - Part 2-2: Tests -

25、 Test B: Dry heat EN 60068-2-2 2007 IEC 60068-2-6 2007 Environmental testing - Part 2-6: Tests - Test Fc: Vibration (sinusoidal) EN 60068-2-6 2008 IEC 60068-2-14 1984 Environmental testing - Part 2: Tests - Test N: Change of temperatureEN 60068-2-142) 3)1999 IEC 60068-2-17 1994 Environmental testing

26、 - Part 2: Tests - Test Q: Sealing EN 60068-2-17 1994 IEC 60068-2-27 2008 Environmental testing - Part 2-27: Tests - Test Ea and guidance: Shock EN 60068-2-27 2009 IEC 60068-2-30 2005 Environmental testing - Part 2-30: Tests - Test Db: Damp heat, cyclic (12 h + 12 h cycle) EN 60068-2-30 2005 IEC 600

27、68-2-58 2004 Environmental testing - Part 2-58: Tests - Test Td: Test methods for solderability, resistance to dissolution of metallization and to soldering heat of surface mounting devices (SMD) EN 60068-2-58 + corr. December 2004 2004 IEC 60068-2-78 2001 Environmental testing - Part 2-78: Tests -

28、Test Cab: Damp heat, steady state EN 60068-2-78 2001 1) EN 60068-1 includes A1 to IEC 60068-1 + corr. October 1988. 2) EN 60068-2-14 includes A1 to IEC 60068-2-14. 3) EN 60068-2-14 is superseded by EN 60068-2-14:2009, which is based on IEC 60068-2-14:2009. 4 EN 60747-5-5:2011 BS EN 60747-5-5:2011Pub

29、lication Year Title EN/HD Year IEC 60112 2003 Method for the determination of the proof and the comparative tracking indices of solid insulating materials EN 60112 2003 IEC 60216-1 2001 Electrical insulating materials - Properties of thermal endurance - Part 1: Ageing procedures and evaluation of te

30、st results EN 60216-1 2001 IEC 60216-2 2005 Electrical insulating materials - Thermal endurance properties - Part 2: Determination of thermal endurance properties of electrical insulating materials - Choice of test criteria EN 60216-2 2005 IEC 60664-1 2007 Insulation coordination for equipment withi

31、n low-voltage systems - Part 1: Principles, requirements and tests EN 60664-1 2007 IEC 60672-2 1999 Ceramic and glass insulating materials - Part 2: Methods of test EN 60672-2 2000 IEC 60695-11-5 2004 Fire hazard testing - Part 11-5: Test flames - Needle-flame test method - Apparatus, confirmatory t

32、est arrangement and guidance EN 60695-11-5 2005 5 EN 60747-5-5:2011 BS EN 60747-5-5:2011CONTENTS 1 Scope. 2 Normative references 3 Photocoupler . . 3.1 Semiconductor material . . 3.2 Details of outline and encapsulation . 3.2.1 IEC and/or national reference number of the outline drawing . 3.2.2 Meth

33、od of encapsulation: glass/metal/plastic/other . . 3.2.3 Terminal identification and indication of any connection between a terminal and the case 3.3 Type of photocouplers . . 3.3.1 DC input photocoupler . 3.3.2 AC input photocoupler . 3.3.3 Phototransistor photocoupler . 3.3.4 Photodarlington photo

34、coupler . . 3.3.5 Photothyristor photocoupler 3.3.6 Phototriac photocoupler. .13 3.3.7 IC photocoupler 13 3.3.8 FET photocoupler . .13 3.3.9 Photodiode photocoupler . .13 3.3.10 IC input photocoupler 13 3.3.11 Solid state opto relay.13 4 Terms related to ratings and characteristics for photocouplers

35、 . 13 4.1 Current transfer ratio . .13 4.1.1 Static value of the (forward) current transfer ratio hF(ctr). .13 4.1.2 Small-signal short-circuit (forward) current transfer ratio hf(ctr) .13 4.2 Cut-off frequency fco . .13 4.3 Input-to-output capacitance CIO . 13 4.4 Isolation resistance RIO .13 4.5 I

36、solation voltage . .13 4.5.1 DC isolation voltage VIO. 14 4.5.2 Repetitive peak isolation voltage VIORM . 14 4.5.3 Surge isolation voltage VIOSM . .14 4.6 Terms related to photocouplers with phototriac output and/or solid state opto-relay with triac output . .14 4.6.1 Repetitive peak voltage . .14 4

37、.6.2 Repetitive peak off-state voltage VDRM. 14 4.6.3 Repetitive peak reverse voltage VRRM. .14 4.6.4 RMS on-state current IT(RMS) . .14 4.6.5 Peak off-state current IDRM . .14 4.6.6 Peak on-state voltage VTM.14 4.6.7 DC off-state current IBD . 14 4.6.8 DC on-state voltage VT . .14 4.6.9 Holding cur

38、rent IH . 14 4.6.10 Critical rate of rise of off-state voltage dV/dt . 14 6 1111121212121212121212121212BS EN 60747-5-5:2011+A1:2015 IEC 60747-5-5:2011+A1:20154.6.11 Trigger input current IFT. 15 4.7 Common mode transient immunity CMTI .15 5 Terms for photocoupler providing protection against electr

39、ical shock. 15 5.1 Safety ratings of a photocoupler for reinforced isolation . . 15 5.2 Electrical safety requirements of a photocoupler for reinforced isolation 15 5.2.1 Partial discharge pd. 15 5.2.2 Apparent charge qpd, q . .15 5.2.3 Threshold apparent charge qpd(TH), qTH. .15 5.2.4 Test voltages

40、 for the partial-discharge test of a photocoupler 15 5.2.5 Test voltage Vpd(t), Vt.15 5.2.6 Partial discharge test voltage Vpd(t) . 16 5.2.7 Initial test voltage Vpd(ini), Vini .16 5.2.8 Apparent charge measuring voltage Vpd(m), Vm 16 5.2.9 Partial-discharge inception voltage Vpd(i), Vi. .16 5.2.10

41、Partial-discharge extinction voltage Vpd(e), Ve. 16 5.2.11 Time intervals of the test voltage .16 5.3 Isolation voltages and isolation test voltages for photocouplers providing protection against electrical shock. .19 5.3.1 Rated isolation voltage . 19 5.4 Limiting values (absolute maximum system) o

42、ver the operating temperature range, unless otherwise stated . 19 5.4.1 Minimum and maximum storage temperatures Tstg . 19 5.4.2 Minimum and maximum ambient or reference-point operating temperatures Tambor Tref .19 5.4.3 Maximum soldering temperature Tsld .19 5.4.4 Maximum continuous (direct) revers

43、e input voltage VR. 19 5.4.5 Maximum collector-emitter voltage, with the base open-circuited VCEO .19 5.4.6 Maximum collector-base voltage, where an external base connection is present, with the emitter open-circuited VCBO. .19 5.4.7 Maximum emitter-base voltage, where an external base connection is

44、 present, with the collector open-circuited VEBO .19 5.4.8 Maximum emitter-collector voltage, where no external base connection is present VECO.19 5.4.9 Maximum continuous (direct) or repetitive peak isolation voltage VIOor VIORM . .19 5.4.10 Where appropriate, maximum surge isolation voltage VIOSM

45、. .19 5.4.11 Maximum continuous collector current IC . . 5.4.12 Maximum continuous forward input current IFat an ambient or reference-point temperature of 25 C and derating curve or derating factor. 5.4.13 Maximum peak forward input current IFMat an ambient or reference-point temperature of 25 C and

46、 under specified pulse conditions . . 5.4.14 Maximum power dissipation Ptrnof the output transistor at an ambient or reference-point temperature of 25 C and a derating curve or derating factor . . 5.4.15 Maximum total power dissipation of the package Ptotat an ambient or reference-point temperature

47、of 25 C and derating curve or derating factor. 7 2020202020 BS EN 60747-5-5:2011+A1:2015 IEC 60747-5-5:2011+A1:20156 Electrical characteristics. 6.1 Phototransistor output photocoupler . . 6.2 Phototriac output photocoupler or solid state opto-relay . . 22 7 Photocouplers providing protection agains

48、t electrical shock. 7.1 Type. 7.2 Ratings (have to be mentioned in a special section in the manufacturers data sheet). . 7.2.1 Safety ratings . 7.2.2 Functional ratings. 7.2.3 Rated isolation voltages . 7.3 Electrical safety requirements .23 7.4 Electrical, environmental and/or endurance test inform

49、ation (supplementary information) . .23 8 Measuring methods for photocouplers . 8.1 Current transfer ratio hF(ctr). . 8.2 Input-to-output capacitance CIO . 8.3 Isolation resistance between input and output RIO 8.4 Isolation test. 33 8.5 Partial discharges of photocouplers34 8.6 Collector-emitter saturation voltage VCE(sat)of a photocoupler . 37 8.6.1 Collector-emitter saturation voltage (d.c. method) 37 8.6.2 Collector-emitter saturation voltage (pulse method) . 38 8.7 Switching ti