DLA SMD-5962-97610 REV B-2004 MICROCIRCUIT HYBRID MEMORY DIGITAL FLASH EPROM 2M X 16-BIT《微型电路 混合型 带记忆力 数字型 2M X 16位 单块硅》.pdf

《DLA SMD-5962-97610 REV B-2004 MICROCIRCUIT HYBRID MEMORY DIGITAL FLASH EPROM 2M X 16-BIT《微型电路 混合型 带记忆力 数字型 2M X 16位 单块硅》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-97610 REV B-2004 MICROCIRCUIT HYBRID MEMORY DIGITAL FLASH EPROM 2M X 16-BIT《微型电路 混合型 带记忆力 数字型 2M X 16位 单块硅》.pdf（19页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Added device types 04, 05, and 06. Updated drawing to reflect the latest requirements of MIL-PRF-38534. -sld 03-12-16 Raymond Monnin B Corrected vendor part numbers. Editorial changes throughout the drawing -sld 04-06-23 Raymond Monnin REV SHEET

2、REV B B B B SHEET 15 16 17 18 REV STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Steve L. Duncan DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Michael C. Jones COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil APP

3、ROVED BY Raymond Monnin MICROCIRCUIT, HYBRID, MEMORY, DIGITAL, FLASH EPROM, 2M X 16-BIT THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 00-07-18 AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-97610 SHEET 1 OF 18 DSCC FORM 22

4、33 APR 97 5962-E318-04 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97610 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This dr

5、awing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in

6、the PIN. 1.2 PIN. The PIN shall be as shown in the following example: 5962 - 97610 01 H X X Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 Radiation hardne

7、ss assurance (RHA) designator. RHA marked devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type 1/ Generi

8、c number Circuit function Access time 01 WF2M16-150DAQ5 FLASH EPROM, 2M x 16-bit 150 ns 02 WF2M16-120DAQ5 FLASH EPROM, 2M x 16-bit 120 ns 03 WF2M16-90DAQ5 FLASH EPROM, 2M x 16-bit 90 ns 04 WF2M16-150DAQE5 FLASH EPROM, 2M x 16-bit 150 ns 05 WF2M16-120DAQE5 FLASH EPROM, 2M x 16-bit 120 ns 06 WF2M16-90

9、DAQE5 FLASH EPROM, 2M x 16-bit 90 ns 1.2.3 Device class designator. This device class designator shall be a single letter identifying the product assurance level. All levels are defined by the requirements of MIL-PRF-38534 and require QML Certification as well as qualification (Class H, K, and E) or

10、 QML Listing (Class G and D). The product assurance levels are as follows: Device class Device performance documentation K Highest reliability class available. This level is intended for use in space applications. H Standard military quality class level. This level is intended for use in application

11、s where non-space high reliability devices are required. G Reduced testing version of the standard military quality class. This level uses the Class H screening and In-Process Inspections with a possible limited temperature range, manufacturer specified incoming flow, and the manufacturer guarantees

12、 (but may not test) periodic and conformance inspections (Group A, B, C and D). E Designates devices which are based upon one of the other classes (K, H, or G) with exception(s) taken to the requirements of that class. These exception(s) must be specified in the device acquisition document; therefor

13、e the acquisition document should be reviewed to ensure that the exception(s) taken will not adversely affect system performance. 1/ The case operating temperature range (TC) is -55C to +125C for device types 01 through 03, and -55C to +100C for device types 04 through 06. Provided by IHSNot for Res

14、aleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97610 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 D Manufacturer specified quality class. Quality level is defined by the manu

15、facturers internal, QML certified flow. This product may have a limited temperature range. 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 56 Ceramic flatpack, lead formed 1.2.5

16、Lead finish. The lead finish shall be as specified in MIL-PRF-38534. 1.3 Absolute maximum ratings. 1/ Supply voltage range (VCC) 2/ -2.0 V dc to +7.0 V dc Signal voltage range (any pin except A9) 2/ . -2.0 V dc to +7.0 V dc Power dissipation (PD) 0.33 W maximum at 5 MHz Storage temperature range. -6

17、5C to +150C Lead temperature (soldering, 10 seconds) . +300C Data retention . 10 years minimum Endurance (write/erase cycles). 10,000 cycles minimum RESET, OE, and A9 voltage for auto select and sector protect (VID): -2.0 V dc to +12.5 V dc 3/ 1.4 Recommended operating conditions. Supply voltage ran

18、ge (VCC). +4.5 V dc to +5.5 V dc Input low voltage range (VIL) . -0.5 V dc to +0.8 V dc Input high voltage range (VIH) . +2.0 V dc to VCC+ 0.5 V dc Case operating temperature range (TC): Device types 01 through 03 -55C to +125C Device types 04 through 06 -55C to +100C RESET, OE, and A9 voltage for a

19、uto select and sector protect (VID): +11.5 V dc to +12.5 V dc 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of th

20、ese documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38534 - Hybrid Microcircuits, General Specification for. 1/ Stresses above the absolute maximum ratings may cause permanent damage to the device. Extended operation at the maximum levels may de

21、grade performance and affect reliability. 2/ Minimum DC voltage in input or I/O pins is -0.5 V dc. During voltage transitions, inputs may overshoot VSSto -2.0 V dc for periods up to 20 ns. Maximum DC voltage on output and I/O pins VCC+0.5 V dc. During voltage transitions, outputs may overshoot to VC

22、C+2.0 V dc for periods up to 20 ns. 3/ Minimum DC input voltage on RESET, OE, and A9 is -0.5 V dc. During voltage transitions, RESET, OE, and A9 may overshoot VSSto -2.0 V dc for periods up to 20 ns. Maximum DC input voltage on A9 is +13.5 V which may overshoot to +14.0 V dc for periods up to 20 ns.

23、 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97610 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Tes

24、t Method Standard Microcircuits. MIL-STD-1835 - Interface Standard for Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/as

25、sist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this

26、 drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item performance requirements for device classes D, E, G, H, and K shall be in accordance with

27、 MIL-PRF-38534. Compliance with MIL-PRF-38534 shall include the performance of all tests herein or as designated in the device manufacturers Quality Management (QM) plan or as designated for the applicable device class. The manufacturer may eliminate, modify or optimize the tests and inspections her

28、ein, however the performance requirements as defined in MIL-PRF-38534 shall be met for the applicable device class. In addition, the modification in the QM plan shall not affect the form, fit, or function of the device for the applicable device class. 3.2 Design, construction, and physical dimension

29、s. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38534 and herein. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Trut

30、h table(s). The truth table(s) shall be as specified on figure 3. 3.2.4 Timing diagrams. The timing diagram(s) shall be specified on figures 4, 5, and 6. 3.2.5 Block diagram. The block diagram shall be as specified on figure 7. 3.2.6 Output load circuit. The output load circuit shall be as specified

31、 on figure 8. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the full specified operating temperature range. 3.4 Electrical test requirements. The electrical test requirements

32、shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Programming procedure. The programming procedure shall be as specified by the manufacturer and shall be available upon request. 3.6 Marking of device(s). Marking of device(s) shall be in

33、accordance with MIL-PRF-38534. The device shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers vendor similar PIN may also be marked. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 59

34、62-97610 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 3.7 Data. In addition to the general performance requirements of MIL-PRF-38534, the manufacturer of the device described herein shall maintain the electrical test data (variables format)

35、from the initial quality conformance inspection group A lot sample, for each device type listed herein. Also, the data should include a summary of all parameters manually tested, and for those which, if any, are guaranteed. This data shall be maintained under document revision level control by the m

36、anufacturer and be made available to the preparing activity (DSCC-VA) upon request. 3.8 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to supply to this drawing. The certificate of compliance (original copy) submitted to DSCC-VA shall affirm tha

37、t the manufacturers product meets the performance requirements of MIL-PRF-38534 and herein. 3.9 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38534 shall be provided with each lot of microcircuits delivered to this drawing. 3.10 Endurance. A reprogrammability test s

38、hall be completed as part of the vendors reliability monitors. This reprogrammability test shall be done for the intial characterization and after any design process changes which may affect the reprogrammability of the device. The methods and procedures may be vendor specific, but shall guarantee t

39、he number of program/erase cycles listed in section 1.3 herein over the full military temperature range as specified herein. The vendors procedure shall be kept under document control and shall be made available upon request of the acquiring or preparing activity. 3.11 Data retention. A data retenti

40、on stress test shall be completed as part of the vendors reliabilty monitors. This test shall be done for the intial characterization and after any design or process change which may affect data retention. The methods and procedures may be vendor specific, but shall gurantee the number of years list

41、ed in section 1.3 herein over the full military temperature range as specified herein. The vendors procedure shall be kept under document control and shall be made available upon request of the acquiring or preparing activity. Provided by IHSNot for ResaleNo reproduction or networking permitted with

42、out license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97610 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limits Test Symbol Conditions 1/ 2/ 3/ -55C TC+125C unless otherwise speci

43、fied Group A subgroups Device types Min Max Unit DC parameters Input leakage current ILIVCC= 5.5 V dc, VIN= GND to VCC 1,2,3 All 10 A Output leakage current ILOVCC= 5.5 V dc, VIN= GND to VCC1,2,3 All 10 A VCCactive current for read ICC1 CS = VIL, OE = VIH, f = 5 MHz, VCC = 5.5 V dc 1,2,3 All 80 mA V

44、CCactive current for Program or erase 4/ ICC2 CS = VIL, OE = VIH, VCC = 5.5 V dc 1,2,3 All 120 mA VCC standby current ICC3 VCC = 5.5 V dc, CS = VIH, f = 5 MHz, RESET = VCC 0.3 V 1,2,3 All 0.50 mA Input low level 4/ VIL1,2,3 All -0.5 0.8 V Input high level 4/ VIH1,2,3 All 2.0 VCC+ 0.5 V V Output low

45、voltage VOLVCC = 4.5 V dc, IOL= 12.0 mA 1,2,3 All 0.45 V Output high voltage VOHVCC = 4.5 V dc, IOH= -2.5 mA 1,2,3 All 0.85 x VCCV Low VCC, lockout voltage VLKO1,2,3 All 3.2 4.2 V Dynamic characteristics Address capacitance 4/ CADVIN= 0 V dc, f = 1.0 MHz, TA= +25C 4 All 25 pF Output enable 4/ Capaci

46、tance COEVIN= 0 V dc, f = 1.0 MHz, TA= +25C 4 All 25 pF See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97610 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION L

47、EVEL B SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Limits Test Symbol Conditions 1/ 2/ 3/ -55C TC+125C unless otherwise specified Group A subgroups Device types Min Max Unit Dynamic characterisitics - continued Write enable 4/ Capacitance CWEVIN= 0 V dc

48、, f = 1.0 MHz, TA= +25C 4 All 25 pF Chip select capacitance 4/ CCSVIN= 0 V dc, f = 1.0 MHz, TA= +25C 4 All 15 pF Data I/O capacitance 4/ CI/OVIN= 0 V dc, f = 1.0 MHz, TA= +25C 4 All 15 pF Functional testing Functional tests See 4.3.1c 7,8A,8B All Read cycle AC timing characteristics Read cycle time 4/ tRCSee figure 4 9,10,11 01,04 02,05 03,06 150 120 90 ns Address access time tACCSee figure 4 9,10,11 01,04 02,05 03,06 150 120 90 ns Chip select acce