DLA SMD-5962-96796 REV D-2007 MICROCIRCUIT MEMORY 128K X 8-BIT ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY MONOLITHIC SILICON《128K X 8-BIT带电的可消除编程只读器硅单片电路数字记忆微电路》.pdf

《DLA SMD-5962-96796 REV D-2007 MICROCIRCUIT MEMORY 128K X 8-BIT ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY MONOLITHIC SILICON《128K X 8-BIT带电的可消除编程只读器硅单片电路数字记忆微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96796 REV D-2007 MICROCIRCUIT MEMORY 128K X 8-BIT ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY MONOLITHIC SILICON《128K X 8-BIT带电的可消除编程只读器硅单片电路数字记忆微电路》.pdf（19页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Added device type 06. -sld 99-03-10 K. A. Cottongim B Figure 1; case outline X changed the dimension A min and max from .150 inches and .166 inches to .106 inches and .156 inches. Changed dimension A1 min and max from .005 inches and .025 inches

2、to .040 inches and .060 inches. Changed dimension b min and max from .016 inches and .020 inches to .015 inches and .019 inches. Changed dimension E min and max from .437 inches and .435 inches to .425 inches and .435 inches. -sld 00-05-05 Raymond Monnin C Figure 1; Case outline Y, corrected the max

3、 limit for dimensions D and D1 in the conversion table . Updated drawing to the latest MIL-PRF-38534 requirements. -sld 01-09-14 Raymond Monnin D Update drawing. -gz 07-02-05 Joseph Rodenbeck REV SHEET REV D D D D SHEET 15 16 17 18 REV STATUS REV D D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5

4、 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Gary Zahn DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Michael C. Jones P O BOX 3990 COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Kendall A. Cottongim MICROCIR

5、CUIT, MEMORY, 128K X 8-BIT, ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 96-10-21 AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-96796 SHEET 1 OF 18 DSCC FORM 2233 APR 97 5962-E231-07 Provided by IHSNot

6、 for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96796 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents five product assurance cl

7、asses as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN. 1.2 PIN. The PIN shall be as sho

8、wn in the following example: 5962 - 96796 01 H X X Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 Radiation hardness assurance (RHA) designator. RHA marked

9、 devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) shall identify the circuit function as follows: Device type Generic number Circuit function Access time

10、01 WME128K8-300CQ EEPROM, 128K x 8-bit 300 ns 02 WME128K8-250CQ EEPROM, 128K x 8-bit 250 ns 03 WME128K8-200CQ EEPROM, 128K x 8-bit 200 ns 04 WME128K8-150CQ EEPROM, 128K x 8-bit 150 ns 05 WME128K8-140CQ EEPROM, 128K x 8-bit 140 ns 06 WME128K8-120CQ EEPROM, 128K x 8-bit 120 ns 1.2.3 Device class desig

11、nator. This device class designator shall be a single letter identifying the product assurance level. All levels are defined by the requirements of MIL-PRF-38534 and require QML Certification as well as qualification (Class H, K, and E) or QML Listing (Class G and D). The product assurance levels ar

12、e as follows: Device class Device performance documentation K Highest reliability class available. This level is intended for use in space applications. H Standard military quality class level. This level is intended for use in applications where non-space high reliability devices are required. G Re

13、duced testing version of the standard military quality class. This level uses the Class H screening and In-Process Inspections with a possible limited temperature range, manufacturer specified incoming flow, and the manufacturer guarantees (but may not test) periodic and conformance inspections (Gro

14、up A, B, C and D). E Designates devices which are based upon one of the other classes (K, H, or G) with exception(s) taken to the requirements of that class. These exception(s) must be specified in the device acquisition document; therefore the acquisition document should be reviewed to ensure that

15、the exception(s) taken will not adversely affect system performance. D Manufacturer specified quality class. Quality level is defined by the manufacturers internal, QML certified flow. This product may have a limited temperature range. Provided by IHSNot for ResaleNo reproduction or networking permi

16、tted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96796 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descri

17、ptive designator Terminals Package style X See figure 1 32 Co-fired ceramic SOJ Y See figure 1 32 Co-fired ceramic dual-in-line 1.2.5 Lead finish. The lead finish shall be as specified in MIL-PRF-38534. 1.3 Absolute maximum ratings. 1/ Supply voltage range (VCC) -0.6 V dc to +6.25 V dc Signal voltag

18、e range (VG). -0.6 V dc to +6.25 V dc Power dissipation (PD) . 0.44 W Max. Storage temperature range -65C to +150C Lead temperature (soldering, 10 seconds). +300C Data retention 10 years minimum Endurance (write/erase cycles) 10,000 cycles minimum Voltage on OE and A9 . -0.6 V dc to +13.5 V dc 1.4 R

19、ecommended operating conditions. Supply voltage range (VCC) +4.5 V dc to +5.5 V dc Input low voltage range (VIL) -0.3 V dc to +0.8 V dc Input high voltage range (VIH) +2.0 V dc to VCC+ 0.3 V dc Case operating temperature range (TC). -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification,

20、 standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38534 -

21、Hybrid Microcircuits, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard for Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK

22、-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In th

23、e event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 1/ Stresses above the absolute maximum ratin

24、gs may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96796 DEFENSE SUPPLY CENTE

25、R COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item performance requirements for device classes D, E, G, H, and K shall be in accordance with MIL-PRF-38534. Compliance with MIL-PRF-38534 may include the perfor

26、mance of all tests herein or as designated in the device manufacturers Quality Management (QM) plan or as designated for the applicable device class. The manufacturer may eliminate, modify or optimize the tests and inspections herein, however the performance requirements as defined in MIL-PRF-38534

27、shall be met for the applicable device class. In addition, the modification in the QM plan shall not 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38534 and herein. 3.2.1 Case outline(s). The case outline(s) shal

28、l be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Truth table(s). The truth table(s) shall be as specified on figure 3. 3.2.4 Timing diagram(s). The timing diagram(s) shall be as specified on figure 4, 5,

29、6, and 7. 3.2.5 Block diagram. The block diagram shall be as specified on figure 8. 3.2.6 Output load circuit. The output load circuit shall be as specified on figure 9. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as s

30、pecified in table I and shall apply over the full specified operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Programming procedure. The prog

31、ramming procedure shall be as specified by the manufacturer and shall be available upon request. 3.6 Marking of device(s). Marking of device(s) shall be in accordance with MIL-PRF-38534. The device shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers vendor similar PIN m

32、ay also be marked. 3.7 Data. In addition to the general performance requirements of MIL-PRF-38534, the manufacturer of the device described herein shall maintain the electrical test data (variables format) from the initial quality conformance inspection group A lot sample, for each device type liste

33、d herein. Also, the data should include a summary of all parameters manually tested, and for those which, if any, are guaranteed. This data shall be maintained under document revision level control by the manufacturer and be made available to the preparing activity (DSCC-VA) upon request. 3.8 Certif

34、icate of compliance. A certificate of compliance shall be required from a manufacturer in order to supply to this drawing. The certificate of compliance (original copy) submitted to DSCC-VA shall affirm that the manufacturers product meets the performance requirements of MIL-PRF-38534 and herein. 3.

35、9 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38534 shall be provided with each lot of microcircuits delivered to this drawing. 3.10 Endurance. A reprogrammability test shall be completed as part of the vendors reliability monitors. This reprogrammability test sha

36、ll be done for the initial characterization and after any design process changes which may affect the reprogrammability of the device. The methods and procedures may be vendor specific, but shall guarantee the number of program/erase cycles listed in section 1.3 herein over the full military tempera

37、ture range. The vendors procedure shall be kept under document control and shall be made available upon request of the acquiring or preparing activity. 3.11 Data retention. A data retention stress test shall be completed as part of the vendors reliability monitors. This test shall be done for initia

38、l characterization and after any design process change which may affect data retention. The methods and procedures may be vendor specific, but shall guarantee the number of years listed in section 1.3 herein over the full military temperature range. The vendors procedure shall be kept under document

39、 control and shall be made available upon request of the acquiring or preparing activity. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96796 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISIO

40、N LEVEL D SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TC +125C unless otherwise specified Group A subgroups Device types Limits Unit Min Max DC parameters Input leakage current ILIVCC= 5.5 V dc, VIN= GND or VCC1,2,3 All 10 A Output

41、 leakage current ILOCS = VIH, OE = VIH, VOUT= GND or VCC1,2,3 All 10 A Supply current ICCCS = VIL, OE = VIH, f = 5 MHz, VCC= 5.5 V dc 1,2,3 All 80 mA Standby current ISBCS = VIH, OE = VIH, f = 5 MHz, VCC= 5.5 V dc 1,2,3 All 0.625 mA Input low level VIL1,2,3 All 0.8 V Input high level VIH1,2,3 All 2.

42、0 V Output low voltage VOLVCC= 4.5 V, IOL= 2.1 mA 1,2,3 All 0.45 V Output high voltage VOHVCC= 4.5 V, IOH= -400 A 1,2,3 All 2.4 V Dynamic characteristics Input capacitance CADVI/O= 0 V, f = 1.0 MHz TA= +25 C 4 All 20 pF Output capacitance CADVIN= 0 V, f = 1.0 MHz TA= +25 C 4 All 20 pF Functional tes

43、ting Functional tests See 4.3.1c 7,8A,8B All See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96796 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEE

44、T 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ 2/ -55C TC +125C unless otherwise specified Group A subgroups Device types Limits Unit Min Max Read cycle AC timing characteristics Read cycle time tRCSee figure 4 9,10,11 01 02 03 04 05

45、06 300 250 200 150 140 120 ns Address access time tACCSee figure 4 9,10,11 01 02 03 04 05 06 300 250 200 150 140 120 ns Chip select access time tACSSee figure 4 9,10,11 01 02 03 04 05 06 300 250 200 150 140 120 ns Output enable to output valid tOESee figure 4 9,10,11 01 02 03,04,05 06 125 100 85 50

46、ns Chip select to output in high Z tDFSee figure 4 9,10,11 All 70 ns Output enable high to output in high Z tDFSee figure 4 9,10,11 All 70 ns Output hold from address change CS or OE whichever is first tOHSee figure 4 9,10,11 All 0 ns See footnotes at end of table. Provided by IHSNot for ResaleNo re

47、production or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96796 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions

48、1/ 2/ -55C TC +125C unless otherwise specified Group A subgroups Device types Limits Unit Min Max Write AC timing characteristics Write Cycle time tWCSee figure 5 9,10,11 All 10 ms Address setup time tASSee figure 5 9,10,11 All 10 ns Write pulse width ( WE or CS ) tWPSee figure 5 9,10,11 All 150 ns Address hold time tAHSee figure 5 9,10,11 All 100 ns Data hold time tDHSee figure 5 9,10,11 All 10 ns Chip select hold time tCHSee figure 5 9,10,11 All 0 ns Data setup time tDSSe