DLA SMD-5962-96588 REV C-2009 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS OCTAL TRANSPARENT LATCH WITH THREE-STATE OUTPUTS MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R132-97. - JB 96-11-19 Monica L. Poelking B Add limit for linear energy threshold (LET) with no latch-up in section 1.5. Make changes to minimum limits for tPZHand tPZLin table I. Update the boilerplate to the

2、requirements of MIL-PRF-38535. Editorial changes throughout. - TVN 06-06-15 Thomas M. Hess C Add appendix A, microcircuit die. - LTG 09-03-17 Thomas M. Hess REV SHET REV B B B B C C C C C C SHEET 15 16 17 18 19 20 21 22 23 24 REV C B B C B B B B B B B B B B REV STATUS OF SHEETS SHEET 1 2 3 4 5 6 7 8

3、 9 10 11 12 13 14 PMIC N/A PREPARED BY Larry T. Gauder CHECKED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil APPROVED BY Monica L. Poelking DRAWING APPROVAL DATE 96-04-19 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, OCTAL TRANSPARENT

4、LATCH WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON SIZE A CAGE CODE 67268 5962-96588 STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A REVISION LEVEL C SHEET 1 OF 24 DSCC FORM 2233 APR 97 5962-E216-09 Provided by IHS

5、Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-96588 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance

6、class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are

7、reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 H 96588 01 V X A Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA desig

8、nator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) in

9、dicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ACS373 Radiation hardened, octal transparent latch with three-state outputs 1.2.3 Device class designator. The device class designator is a si

10、ngle letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualific

11、ation to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style R GDIP1-T20 or CDIP2-T20 20 Dual-in-line X CDFP4-F20 20 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MI

12、L-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-96588 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION

13、LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.3 V dc to +7.0 V dc DC input voltage range (VIN) -0.3 V dc to VDD + 0.3 V dc DC output voltage range (VOUT) . -0.3 V dc to VDD+ 0.3 V dc DC input current, any one input (IIN). 10 mA Latch-up im

14、munity current (ILU) 150 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 5 seconds). +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) +175C Maximum power dissipation (PD) . 1.0 W 1.4 Recommended operating conditions. 2/ 3/

15、Supply voltage range (VDD) +4.5 V dc to +5.5 V dc Input voltage range (VIN) 0.0 V dc to VDDOutput voltage range (VOUT). 0.0 V dc to VDDMaximum input rise or fall time at VDD= 4.5 V (tr, tf) 1 ns/V 4/ Case operating temperature range (TC). -55C to +125C 1.5 Radiation features. 5/ Total dose 1 x 106Ra

16、ds (Si) Single event phenomenon (SEP) effective: Linear energy threshold (LET), no upsets (see 4.4.4.4). 80 MeV/(mg/cm2) Linear energy threshold (LET), no latch-up (see 4.4.4.4). 120 MeV/(mg/cm2) Dose rate upset (20 ns pulse) 1 x 109Rads (Si)/s Latch-up. None Dose rate survivability 1 x 1012Rads (Si

17、)/s 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein sh

18、all apply over the full specified VDDrange and case temperature range of -55C to +125C unless otherwise specified. 4/ Derate system propagation delays by difference in rise time to switch point for tror tf 1 ns/V. 5/ Radiation testing is performed on the standard evaluation circuit.Provided by IHSNo

19、t for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-96588 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, an

20、d handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Cir

21、cuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780

22、 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the ev

23、ent of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The indiv

24、idual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individua

25、l item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions

26、. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. Th

27、e terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as s

28、pecified on figure 4. 3.2.6 Irradiation test connections. The irradiation test connections shall be as specified in table III. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post irrad

29、iation parameter limits are as specified in table IA and shall apply over the full case operating temperature range.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-96588 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBU

30、S, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN liste

31、d in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator sh

32、all still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as requi

33、red in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements o

34、f this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source

35、 of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as req

36、uired for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 he

37、rein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required docu

38、mentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 38 (see MIL-PRF-38535, appendix A).Provided by IHSNot for Resal

39、eNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-96588 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Limits 2/ Test Symbol Test c

40、onditions 1/ -55C TC +125C unless otherwise specified Device type VDDGroup A subgroups Min Max Unit All 1, 2, 3 3.15 M, D, P, L, R, F, G, H 3/ All 4.5 V 1 3.15 All 1, 2, 3 3.85 High level input voltage VIH M, D, P, L, R, F, G, H 3/ All 5.5 V 1 3.85 V All 1, 2, 3 1.35 M, D, P, L, R, F, G, H 3/ All 4.

41、5 V 1 1.35 All 1, 2, 3 1.65 Low level input voltage VIL M, D, P, L, R, F, G, H 3/ All 5.5 V 1 1.65 V For all inputs affecting output under test, VIN= VDDor VSSIOH= -100 A All 1, 2, 3 4.25 High level output voltage VOH M, D, P, L, R, F, G, H 3/ All 4.5 V 1 4.25 V For all inputs affecting output under

42、 test, VIN= VDDor VSSIOL= 100 A All 1, 2, 3 0.25 Low level output voltage VOL M, D, P, L, R, F, G, H 3/ All 4.5 V 1 0.25 V For input under test, VIN= VDDFor all other inputs, VIN= VDDor VSSAll 1, 2, 3 +1.0 Input current high IIH M, D, P, L, R, F, G, H 3/ All 5.5 V 1 +1.0 A For input under test, VIN=

43、 VSSFor all other inputs, VIN= VDDor VSSAll 1, 2, 3 -1.0 Input current low IIL M, D, P, L, R, F, G, H 3/ All 5.5 V 1 -1.0 A For output under test, VOUT= VDD - 0.4 V VIN= VDDor VSSAll 1, 2, 3 -8.0 Output current (source) IOH4/ M, D, P, L, R, F, G, H 3/ All 4.5 V and 5.5 V 1 -8.0 mA For output under t

44、est, VOUT= 0.4 V VIN= VDDor VSSAll 1, 2, 3 8.0 Output current (sink) IOL4/ M, D, P, L, R, F, G, H 3/ All 4.5 V and 5.5 V 1 8.0 mA VIN= VDDor VSSAll 1, 2, 3 10.0 Quiescent supply current IDDQM, D, P, L, R, F, G, H 3/ All 5.5 V 1 10.0 A Short circuit output current IOS5/ 6/ VOUT= VDDand VSSAll 5.5 V 1

45、, 2, 3 200 mA See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-96588 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 TABLE

46、 IA. Electrical performance characteristics Continued. Limits 2/ Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Device type VDDGroup A subgroups Min Max Unit OC = 5.5 V For all other inputs, VIN= VDDor VSSVOUT= VDD All 1, 2, 3 +20.0 Three-state output leakage current, high I

47、OZHM, D, P, L, R, F, G, H 3/ All 5.5 V 1 +20.0 A OC = 5.5 V For all other inputs, VIN= VDDor VSSVOUT= VSS All 1, 2, 3 -20.0 Three-state output leakage current, low IOZLM, D, P, L, R, F, G, H 3/ All 5.5 V 1 -20.0 A Input capacitance CINf = 1 MHz See 4.4.1c All 0.0 V 4 15.0 pF Output capacitance COUTf

48、 = 1 MHz See 4.4.1c All 0.0 V 4 15.0 pF CL= 50 pF, per switching output All 4, 5, 6 1.9 Switching power dissipation PSW7/ M, D, P, L, R, F, G, H 3/ All 4.5 V and 5.5 V 4 1.9 mW/MHzVIH= 0.7 VDD, VIL= 0.3 VDD See 4.4.1b All 7, 8 L H Functional test 8/ M, D, P, L, R, F, G, H 3/ All 4.5 V and 5.5 V 7 L H CL= 50 pF minimum See figure 4 All 9, 10, 11 1.0 14.0 tPLH19/ M, D, P, L, R, F, G, H 3/ All 4.5 V and 5.5 V 9 1.0 14.0 CL= 50 pF minimum See figure 4 All 9, 10, 11 1.0 16.0 Propagation delay time, nD to nQ tPHL19/ M, D, P, L, R, F, G, H 3/ All 4.