DLA SMD-5962-96545 REV D-2009 MICROCIRCUIT DIGITAL ADVANCED CMOS RADIATION HARDENED 3-LINE TO 8-LINE DECODER DEMULTIPLEXER TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf
《DLA SMD-5962-96545 REV D-2009 MICROCIRCUIT DIGITAL ADVANCED CMOS RADIATION HARDENED 3-LINE TO 8-LINE DECODER DEMULTIPLEXER TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-96545 REV D-2009 MICROCIRCUIT DIGITAL ADVANCED CMOS RADIATION HARDENED 3-LINE TO 8-LINE DECODER DEMULTIPLEXER TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf(23页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R123-97. 96-12-10 Monica L. Poelking B Incorporate Revision A. Update boilerplate to MIL-PRF-38535 requirements. LTG 01-10-02 Thomas M. Hess C Correct the title to accurately describe the device function. Chang
2、e figure 4, switching waveforms and test circuit. Update boilerplate to the latest MIL-PRF-38535 requirements. - jak 07-11-07 Thomas M Hess D Add die requirements with appendix A for device type 01. Correct SEP test limit LET value for no latch-up in the table IB. Update boilerplate paragraphs to cu
3、rrent requirements of MIL-PRF-38535 - MAA 09-05-20 Thomas M Hess REV SHET REV D D D D D D D D SHEET 15 16 17 18 19 20 21 22 REV STATUS REV D D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh V. Nguyen STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh
4、V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil APPROVED BY Monica L. Poelking DRAWING APPROVAL DATE 96-04-12 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, 3-LINE TO 8-LINE DECODER/ DEMULTIPLEXER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON THIS DR
5、AWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-96545 SHEET 1 OF 22 DSCC FORM 2233 APR 97 5962-E138-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STAND
6、ARD MICROCIRCUIT DRAWING SIZE A 5962-96545 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space applicati
7、on (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 H 96545
8、 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA level
9、s and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit fun
10、ction as follows: Device type Generic number Circuit function 01 54ACTS138 Radiation hardened, 3-line to 8-line decoder/demultiplexer, TTL compatible inputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class
11、Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outlines. The case outlines are as designat
12、ed in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line X CDFP4-F16 16 Dual flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for devi
13、ce class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96545 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/
14、 Supply voltage range (VDD) -0.3 V dc to +7.0 V dc DC input voltage range (VIN) -0.3 V dc to VDD+ 0.3 V dc DC output voltage range (VOUT) . -0.3 V dc to VDD+ 0.3 V dc DC input current, any one input (IIN). 10 mA Latch-up immunity current (ILU) 150 mA Storage temperature range (TSTG) . -65C to +150C
15、Lead temperature (soldering, 5 seconds). +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) +175C Maximum package power dissipation (PD). 1.0 W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VDD) +4.5 V dc to +5.5 V dc Input voltage range
16、(VIN) +0.0 V dc to VDDOutput voltage range (VOUT). +0.0 V dc to VDDCase operating temperature range (TC). -55C to +125C Maximum input rise or fall time at VDD= 4.5 V (tr, tf) 1 ns/V 4/ 1.5 Radiation features. 5/ Maximum total dose available (dose rate = 50 300 rads (Si)/s) 1 X 106Rads (Si) Single ev
17、ent phenomenon (SEP) effective linear energy threshold (LET) No upsets (see 4.4.4.4) 80 MeV/(mg/cm2) 6/ Dose rate upset (20 ns pulse) 1 x 109Rads (Si)/s 6/ Dose rate induced latch-up None 6/ Dose rate survivability 1 x 1012Rads (Si)/s 6/ 1/ Stresses above the absolute maximum rating may cause perman
18、ent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VDDrange and case temperature range
19、of -55C to +125C unless otherwise noted. 4/ Derate system propagation delays by difference in rise time to switch point for tror tf 1 ns/V. 5/ Radiation testing is performed on the standard evaluation circuit. 6/ Limits are guaranteed by design or process but not production tested unless specified b
20、y the customer through the purchase order or contract. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96545 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 AP
21、R 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or cont
22、ract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBO
23、OKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111
24、-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM F1192 - St
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