DLA SMD-5962-95791 REV C-2005 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS OCTAL D FLIP-FLOP WITH MASTER RESET MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体八角D可重新设置双稳态多谐振荡器硅单片电路线型微.pdf

《DLA SMD-5962-95791 REV C-2005 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS OCTAL D FLIP-FLOP WITH MASTER RESET MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体八角D可重新设置双稳态多谐振荡器硅单片电路线型微.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-95791 REV C-2005 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS OCTAL D FLIP-FLOP WITH MASTER RESET MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体八角D可重新设置双稳态多谐振荡器硅单片电路线型微.pdf（25页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R145-98. CFS 98-07-31 Monica L. Poelking B Changes in accordance with NOR 5962-R071-99. - JAK 99-08-16 Monica L. Poelking C Incorporate revisions A and B. Correct the input voltage values for VOHand VOLtests in

2、 table I. Update boilerplate to MIL-PRF-38535 requirements. Editorial changes throughout. LTG 05-08-16 Thomas M. Hess REV SHET REV C C C C C C C C C C SHEET 15 16 17 18 19 20 21 22 23 24 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY

3、Larry T. Gauder DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE

4、 95-11-30 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, OCTAL D FLIP-FLOP WITH MASTER RESET, MONOLITHIC SILICON AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-95791 SHEET 1 OF 24 DSCC FORM 2233 APR 97 5962-E466-05 Provided by IHSNot for ResaleNo reproduction or networking permit

5、ted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95791 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (devic

6、e classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown

7、in the following example: 5962 R 95791 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet

8、 the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The d

9、evice type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 HCS273 Radiation hardened, SOS, high speed CMOS, octal D flip-flop with master reset 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance

10、level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s).

11、The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style R CDIP2-T20 20 Dual-in-line X CDFP4-F20 20 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, ap

12、pendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95791 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum

13、ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC+ 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc DC input current, any one input (IIN). 10 mA DC output current, any one output (IOUT) 25 mA Storage temperature rang

14、e (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds). +265C Thermal resistance, junction-to-case (JC): Case outline R . 24C/W Case outline X 28C/W Thermal resistance, junction-to-ambient (JA): Case outline R . 72C/W Case outline X 107C/W Junction temperature (TJ) +175C Maximum package p

15、ower dissipation at TA= +125C (PD): 4/ Case outline R . 0.69 W Case outline X 0.47 W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC) +4.5 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to VCCOutput voltage range (VOUT). +0.0 V dc to VCCMaximum low level input voltage (V

16、IL) 30% of VCCMinimum high level input voltage (VIH). 70% of VCCCase operating temperature range (TC). -55C to +125C Maximum input rise or fall time at VCC= 4.5 V (tr, tf) 500 ns 1.5 Radiation features: Maximum total dose available (dose rate = 50 300 rad (Si)/s) 2 x 105Rads (Si) Single event phenom

17、enon (SEP) effective linear energy threshold (LET), no upsets (see 4.4.4.4) 100 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) . 1 x 1010Rads (Si)/s 5/ Latch-up None 5/ Dose rate survivability . 1 x 1012Rads (Si)/s 5/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the dev

18、ice. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C unle

19、ss otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rate: Case outline R. 13.9 mW/C Case outline X . 9.3 mW/C 5/ Guaranteed by design or process but not tested. Provided by IHSNot for Re

20、saleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95791 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbo

21、oks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, M

22、anufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Stand

23、ard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a

24、 conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual it

25、em requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item r

26、equirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The d

27、esign, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The termi

28、nal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specifie

29、d on figure 4. 3.2.6 Irradiation test connections. The irradiation test connections shall be as specified in table III. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95791 DEFENSE SUPPLY CENTER COLUMBUS COL

30、UMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and sh

31、all apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2

32、herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still

33、 be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MI

34、L-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this dr

35、awing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of suppl

36、y for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for

37、 device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) inv

38、olving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation

39、. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 38 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo repro

40、duction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95791 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Test conditions 1/ -55C TC

41、 +125C unless otherwise specified Device type VCCGroup A subgroups Limits 2/ UnitMin Max High level output voltage VOH For all inputs affecting output under test VIN= 3.15 V or 1.35 V For all other inputsAll 4.5 V 1, 2, 3 4.40 V VIN= VCCor GND IOH= -50 A M, D, P, L, R 3/ All 1 4.40 For all inputs af

42、fecting output under test VIN= 3.85 V or 1.65 V For all other inputs All 5.5 V 1, 2, 3 5.40 VIN= VCCor GND IOH= -50 A M, D, P, L, R 3/ All 1 5.40 Low level output voltage VOL For all inputs affecting output under test VIN= 3.15 V or 1.35 V For all other inputs All 4.5 V 1, 2, 3 0.1 V VIN= VCCor GND

43、IOL= 50 A M, D, P, L, R 3/ All 1 0.1 For all inputs affecting output under test VIN= 3.85 V or 1.65 V For all other inputs All 5.5 V 1, 2, 3 0.1 VIN= VCCor GND IOL= 50 A M, D, P, L, R 3/ All 1 0.1 Input current high IIHFor input under test, VIN= 5.5 V For all other inputs VIN= VCCor GND All 5.5 V 1

44、+0.5 A 2, 3 +5.0 M, D, P, L, R 3/ All 1 +5.0 Input current low IILFor input under test, VIN= GND For all other inputs VIN= VCCor GND All 5.5 V 1 -0.5 A 2, 3 -5.0 M, D, P, L, R 3/ All 1 -5.0 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without li

45、cense from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95791 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specif

46、ied Device type VCCGroup A subgroups Limits 2/ Unit Min Max All 4.5 V 1 -7.2 mA For all inputs affecting output under test, VIN= 4.5 V or 0.0 V For all other inputs 2, 3 -6.0 Output current high (Source) IOHVIN= VCCor GND VOUT= 4.1 V M, D, P, L, R 3/ All 1 -6.0 All 4.5 V 1 7.2 mA For all inputs affe

47、cting output under test, VIN= 4.5 V or 0.0 V For all other inputs 2, 3 6.0 Output current low (Sink) IOLVIN= VCCor GND VOUT= 0.4 V M, D, P, L, R 3/ All 1 6.0 Quiescent supply current ICCVIN= VCCor GND All 5.5 V 1 40.0 A 2, 3 750.0M, D, P, L, R 3/ All 1 750.0Input capacitance CINAll 5.0 V 4 10.0 pF A

48、ll 5.0 V 4 60.0 pF Power dissipation capacitance CPD4/ VIH= 5.0 V, VIL= 0.0 V f = 1 MHz, see 4.4.1c 5, 6 70.0 VIH= 3.15 V, VIL= 1.35 V See 4.4.1b All 4.5 V 7, 8 L H M, D, P, L, R 3/ All 7 L H VIH= 3.85 V, VIL= 1.65 V See 4.4.1b All 7, 8 L H Functional test 5/ M, D, P, L, R 3/ All 5.5 V 7 L H All 4.5

49、 V 9 2.0 20.0 ns CL= 50 pF RL= 500 See figure 4 10, 11 2.0 24.0 tPLH16/ M, D, P, L, R 3/ All 9 2.0 24.0 All 4.5 V 9 2.0 23.0 ns CL= 50 pF RL= 500 See figure 4 10, 11 2.0 27.0 Propagation delay time, CP to Qn tPHL16/ M, D, P, L, R 3/ All 9 2.0 27.0 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction