DLA SMD-5962-95772 REV B-2004 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS INVERTING OCTAL BUFFER LINE DRIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC S.pdf

《DLA SMD-5962-95772 REV B-2004 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS INVERTING OCTAL BUFFER LINE DRIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC S.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-95772 REV B-2004 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS INVERTING OCTAL BUFFER LINE DRIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC S.pdf（21页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R073-98 - thl. 98-03-24 Raymond L. Monnin B Update boilerplate to MIL-PRF-38535 requirements. Editorial changes throughout. jak 04-08-17 Thomas M. Hess REV SHET REV B B B B B B SHEET 15 16 17 18 19 20 REV STATU

2、S REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh V. Nguyen STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil APPROVED BY Monica L. Poelking THIS DRAWING

3、 IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-12-06 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, INVERTING OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON AMSC N/A REVISION LEVEL

4、 B SIZE A CAGE CODE 67268 5962-95772 SHEET 1 OF 20 DSCC FORM 2233 APR 97 5962-E124-04 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95772 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVE

5、L B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or I

6、dentifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 95772 01 V X C Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1

7、.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535

8、, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 HCTS240A Radiation hardened, SOS, high speed

9、CMOS, inverting octal buffer/line driver with three-state outputs, TTL compatible inputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the

10、 requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q, V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive desi

11、gnator Terminals Package style R CDIP2-T20 20 Dual-in-line X CDFP4-F20 20 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted wit

12、hout license from IHS-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95772 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V

13、 dc to VCC+ 0.5 V dc DC output voltage range (VOUT). -0.5 V dc to VCC+ 0.5 V dc DC input current, any one input (IIN) 10 mA DC output current, any one output (IOUT). 35 mA Storage temperature range (TSTG). -65C to +150C Lead temperature (soldering, 10 seconds) +265C Thermal resistance, junction-to-c

14、ase (JC): Case outline R. 24C/W Case outline X . 28C/W Thermal resistance, junction-to-ambient (JA): Case outline R. 72C/W Case outline X . 107C/W Junction temperature (TJ) +175C Maximum package power dissipation at TA= +125C (PD): 4/ Case outline R. 0.69 W Case outline X . 0.47 W 1.4 Recommended op

15、erating conditions. 2/ 3/ Supply voltage range (VCC) +4.5 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V to VCCOutput voltage range (VOUT) +0.0 V to VCCMaximum low level input voltage (VIL) . 0.8 V Minimum high level input voltage (VIH) VCC/2 Case operating temperature range (TC) -55C to +125C M

16、aximum input rise and fall time at VCC= 4.5 V (tr, tf). 100 ns/V Radiation features: Total dose . 2 x 105Rads (Si) Single event phenomenon (SEP) effective linear energy threshold (LET) no upsets (see 4.4.4.4) 100 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse). 1 x 1010Rads (Si)/s 5/ Latch-up None 5/

17、Dose rate survivability. 1 x 1012Rads (Si)/s 5/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limit

18、s for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rat

19、e: Case outline R. 13.9 mW/C Case outline X. 9.3 mW/C 5/ Guaranteed by design or process but not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95772 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218

20、-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these docum

21、ents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Comp

22、onent Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the Standardization Docu

23、ment Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable la

24、ws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) pl

25、an. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the re

26、quirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class

27、 M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specif

28、ied on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. 3.2.6 Irradiation test connections. The irradiation test connections shall be as specified in table III herein. 3.3 Electrical performance characteristics and post

29、irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. Provided by IHSNot for ResaleNo reproduction or networking perm

30、itted without license from IHS-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95772 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. T

31、he electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufact

32、urer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3

33、.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a cer

34、tificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-

35、HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the req

36、uirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 N

37、otification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs

38、 agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered

39、 by this drawing shall be in microcircuit group number 37 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95772 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION

40、 LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Device type VCCGroup A subgroups Limits 2/ Unit Test conditions 1/ -55C TC +125C unless otherwise specified Min Max For all inputs affecting output under test, VIN= 2.25 V or 0.8 V For all other input

41、s, VIN= VCCor GND IOH= -50 A All 1, 2, 3 4.40 M, D, P, L, R 4/ All 4.5 V 1 4.40 For all inputs affecting output under test, VIN= 2.75 V or 0.8 V For all other inputs, VIN= VCCor GND IOH= -50 A All 1, 2, 3 5.40 High level output voltage VOH3/ M, D, P, L, R 4/ All 5.5 V 1 5.40 V For all inputs affecti

42、ng output under test, VIN= 2.25 V or 0.8 V For all other inputs, VIN= VCCor GND IOL= 50 A All 1, 2, 3 0.1 M, D, P, L, R 4/ All 4.5 V 1 0.1 For all inputs affecting output under test, VIN= 2.75 V or 0.8 V For all other inputs, VIN= VCCor GND IOL= 50 A All 1, 2, 3 0.1 Low level output voltage VOL3/ M,

43、 D, P, L, R 4/ All 5.5 V 1 0.1 V 1 +0.5 For input under test, VIN= 5.5 V For all other inputs, VIN= VCCor GND All 2, 3 +5.0 Input current high IIHM, D, P, L, R 4/ All 5.5 V 1 +5.0 1 -0.5 For input under test, VIN= GND For all other inputs, VIN= VCCor GND All 2, 3 -5.0 Input current low IILM, D, P, L

44、, R 4/ All 5.5 V 1 -5.0 A 1 -7.2 For all inputs affecting output under test, VIN= 4.5 V or 0.0 V For all other inputs, VIN= VCCor GND All 2, 3 -6.0 Output current high (source) IOH5/ VOUT= 4.1 V M, D, P, L, R 4/ All 4.5 V 1 -6.0 1 7.2 For all inputs affecting output under test, VIN= 4.5 V or 0.0 V F

45、or all other inputs, VIN= VCCor GND All 2, 3 6.0 Output current low (sink) IOL5/ VOUT= 0.4 V M, D, P, L, R 4/ All 4.5 V 1 6.0 mA 1 +1.0 OEm = 5.5 V For all other inputs, VIN= 0.0 V or 5.5 V All 2, 3 +50 Three-state output leakage current high IOZHVOUT= 5.5 V M, D, P, L, R 4/ All 5.5 V 1 +50 A 1 -1.0

46、 OEm = 5.5 V For all other inputs, VIN= 0.0 V or 5.5 V All 2, 3 -50 Three-state output leakage current low IOZLVOUT= 0.0 V M, D, P, L, R 4/ All 5.5 V 1 -50 A See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-STANDARD MICROC

47、IRCUIT DRAWING SIZE A 5962-95772 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Limits 2/ Unit Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Device type VCCGr

48、oup A subgroups Min Max For inputs under test VIN= VCC 2.1 V For all other inputs All 1, 2, 3 1.6 Quiescent supply current delta, TTL input levels ICC6/ VIN= VCCor GND M, D, P, L, R 4/ 6/ All 5.5 V 1 1.6 mA 1 40.0 VIN= VCCor GND All 2, 3 750 Quiescent supply current ICCM, D, P, L, R 4/ All 5.5 V 1 750 A Input capacitance CINAll 5.0 V 4 10 pF Output capacitance COUT4 20 4 135 Power dissipation capacitance CPD7/ VIH= 5.0 V, VIL= 0.0 V f = 1 MHz See 4.4.1c All 5.0 V 5, 6 150 pF VIH= 2.25 V, VIL= 0.80 V See 4.4.1b All 7, 8 L H M, D, P, L, R 4/ All 4.5 V 7 L H VIH= 2.75