DLA SMD-5962-95619 REV C-2009 MICROCIRCUIT DIGITAL ADVANCED CMOS 16-BIT BUFFER LINE DRIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf
《DLA SMD-5962-95619 REV C-2009 MICROCIRCUIT DIGITAL ADVANCED CMOS 16-BIT BUFFER LINE DRIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-95619 REV C-2009 MICROCIRCUIT DIGITAL ADVANCED CMOS 16-BIT BUFFER LINE DRIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf(18页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add RHA data. Editorial changes throughout - jak. 99-07-02 Monica L. Poelking B Change ground bounce limits VOLP, VOLV, VOHP, and VOHV in table I. Update boilerplate to MIL-PRF-38535 requirements. - CFS 02-04-12 Thomas M. Hess C Update the boiler
2、plate paragraphs to current requirements as specified in MIL-PRF-38535. - jak 09-04-15 Thomas M. Hess REV SHEET REV C C C SHEET 15 16 17 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Joseph A. Kerby STANDARD MICROCIRCUIT DRAWING CHEC
3、KED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE APPROVED BY Thomas M. Hess MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 16-BIT BUFFER/LINE DRIVER WITH THREE-
4、STATE OUTPUTS, TTL COMPATIBLE INPUTS, DRAWING APPROVAL DATE 95-05-11 MONOLITHIC SILICON AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-95619 SHEET 1 OF 17 DSCC FORM 2233 APR 97 5962-E242-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STAND
5、ARD MICROCIRCUIT DRAWING SIZE A 5962-95619 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2233 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space applicati
6、on (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 95619
7、 01 V X A Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA lev
8、els and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit f
9、unction as follows: Device type Generic number Circuit function 01 54ACTQ16244 16-bit buffer/line driver with three-state outputs, TTL compatible inputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Devi
10、ce requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designat
11、ed in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X GDFP1-F48 48 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo re
12、production or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95619 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2233 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0
13、V dc DC input voltage range (VIN) -0.5 V dc to VCC + 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc DC input clamp current (IIK): VIN= -0.5 V -20 mA VIN= VCC+ 0.5V +20 mA DC output clamp current (IOK): VOUT= -0.5 V -20 mA VOUT =VCC+ 0.5V. +20 mA DC output current (IOUT) per out
14、put pin 50 mA DC VCCor GND current (ICC, IGND) per pin . 400 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds) +300C Thermal resistance, junction-to-case (JC). See MIL-STD-1835 Junction temperature (TJ) +175C Maximum power dissipation (PD) 750 mW 1.4 Recomm
15、ended operating conditions. 2/ 3/ Supply voltage range (VCC) +4.5 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to VCCOutput voltage range (VOUT) +0.0 V dc to VCCMaximum low level input voltage (VIL) 0.8 V dc Minimum high level input voltage (VIH). 2.0 V dc Case operating temperature range (
16、TC). -55C to +125C Minimum input edge rate (VINfrom 0.8 V to 2.0 V or from 2.0 V to 0.8 V) (V/t) 125 mV/ns Maximum high level output current (IOH) .-24 mA Maximum low level output current (IOL) .+24 mA 1.5 Radiation features: Maximum total dose available (effective dose rate 165 mrads(Si)/s) 1 X 105
17、Rads (Si) 4/ _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified he
18、rein shall apply over the full specified VCCrange and case temperature range of -55C to +125C. 4/ Device type 01 is irradiated at dose rate = 50 - 300 rads (Si)/s in accordance with MIL-STD-883, method 1019, condition A, and is guaranteed to a maximum total dose specified. The effective dose rate af
19、ter extended room temperature anneal = 165 mrads (Si)/s per MIL-STD-883, method 1019, condition A, section 3.11.2. The total dose specification for this device only applies to the specified effective dose rate, or lower, environment. Provided by IHSNot for ResaleNo reproduction or networking permitt
20、ed without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95619 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2233 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standar
21、ds, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
22、DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of the
23、se documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited he
24、rein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. ELECTRONIC INDUSTRIES ALLIANCE (EIA) JESD 20 - Standardized for Description of 54/74ACXXXX and 54/74ACTXXXX Advanced High-Spee
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