DLA SMD-5962-95542-1995 MICROCIRCUIT DIGITAL BTL 9-BIT LATCHING DATA TRANSCEIVER MONOLITHIC SILICON《9-BIT闭塞装置数据无线电收发机硅单片电路线型微电路》.pdf

《DLA SMD-5962-95542-1995 MICROCIRCUIT DIGITAL BTL 9-BIT LATCHING DATA TRANSCEIVER MONOLITHIC SILICON《9-BIT闭塞装置数据无线电收发机硅单片电路线型微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-95542-1995 MICROCIRCUIT DIGITAL BTL 9-BIT LATCHING DATA TRANSCEIVER MONOLITHIC SILICON《9-BIT闭塞装置数据无线电收发机硅单片电路线型微电路》.pdf（24页珍藏版）》请在麦多课文档分享上搜索。

1、LTR I DESCRIPTION * SHEET DATE (YR-MO-DA) I APPROVED SHEET I 15 I 16 i7 REV STATUS OF SHEETS DRAW I NG APPROVAL DATE 95-01-06 , REVISION LEVEL PMIC NIA MONOLITHIC SILICON SIZE CAGE CODE 5962-95542 A 67268 STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES

2、 OF THE DEPARTMENT OF DEFENSE AMSC N/A PREPARED BY Larry T. Gauder DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 CHECKED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, BTL 9-BIT LATCHING DATA TRANSCEIVER, APPROVED BY Monica L. Poelking SHEET 1 OF 23 5 FORM 193 JUL 94 DISTRIBUTION STATEMENT h. A

3、pproved for pub1 ic release; distribution is unlimited. 5962-E066-95 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-7 SMD-59b2-95542 9999996 0073359 563 1. SCOPE 1.1 Scope. This drawing forms a part of a one part - one part number documentation syst

4、em (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and space application (device class V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class H microcir

5、cuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, “Provisions for the use of MIL-STD-883 in conjunction with conpliant non-JAN devices“. When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN shall be as s

6、hown in the following example: 95542 Federa 1 RHA Devi ce stock class designator trie class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) (see 1.2.3) i Draw i ng number 1.2.1 RHA desi nator. Device class M RHA marked devices shall meet the MIL-1-38535 appendix

7、A specified RHA levels and shall-6idhh the appropriate RHA designator. Device classes Q and V RHA mrked devices shall meet the MIL-1-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-1 indicates a non-RHA device. 1.2.2 Device type(s1. The device type(s) sha

8、ll identify the circuit function as follows: Device type Gener i c number Circuit f unct ion O1 OS3886 BTL 9-bit latching data transceiver STANDW WICROCIBCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER 1.2.3 Device class desiqnator. The device class designator shall be a single letter identifying the

9、 product assurance level as follows: Device class Device requirements documentation M Q or V Vendor self-certif ication to the requirements for non-JAN class 8 microcircuits in accordance with 1.2.1 of MIL-STD-883 Certification and qualification to MIL-1-38535 1.2.4 Case outline(s1. The case outline

10、(s) shall be as designated in MIL-STD-1835 and as follows: Outline letter Descriptive desiqnator Termi na 1 s Packaae style X See figure 1 48 flat package SIZE 5962-95542 A 1.2.5 Lead finish. The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class t4 or MIL-1-38535 for classe

11、s Q and V. Finish letter “X“ shall not be marked on the microcircuit or its packaging. The “X“ designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference. DAYTON, OHIO 45444 I REVISION LEVEL I SHEET 2 DESC FORM 193A JUL 94

12、 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-. I STANDARD SIZE 5962-95542 MICROCIRCUIT DMWING A DEFENSE ELECTRONICS SUPPLY CENTER 1.3 Absolute maximum ratinqs. Li I Supply voltage (v ) - - - - - - - - - - - - - - - - - - - Control input volt!iSe

13、- - - - - - - - - - - - - - - - - - - Driver input and receiver output - - - - - - - - - - - - - Bus termination voltage - - - - - - - - - - - - - - - - - - Receiver input current - - - - - - - - - - - - - - - - - - Storage temperature range (Ts 3.10 Microcircuit (Iroup assiqnment for device class M

14、. Device class M devices covered by this drawing shall be in microcircuit group number 100 (see MIL-1-38535, appendix A). 4. QUALITY ASSURANCE PROVISIONS 4.1 Sanmlina and inspection. For device class M, sampling and inspection procedures shall be in accordance with MIL-STD-883 (see 3.1 herein). For

15、device classes Q and V, sampling and inspection procedures shall be in accordance7 with MIL-1-38535 or as modified in the device manufacturers QM plan. The modification in the QM plan shall not effect the form, fit, or function as described herein. Provided by IHSNot for ResaleNo reproduction or net

16、working permitted without license from IHS-,-,-Conditions -55C 5 TC 5 +125“C v =5V+lO?s Group A Device subgroups type 11“ 1, 2, 3 I Vcc = 5.5 V, V N = 2.4 V An = CD = 0.5 6, T/R = 2.4 V Input diode clamp voltage I Vlc Vcc = 4.5 V, ICLAMp = -12 mA 1, 2, 3 V = 5.5 V, An = 0.5 V Cb-= O V, BN = 0.75 V.

17、T/R = 2.4 V 1, 2, 3 TABLE I. Electrical Performance characteristics. I 1 I l Test Unit Limits I I l l Driver and control inputs: (CD, T/R, An, ACLK, LE and RBYP) - o1 Logical 1 input voltage I IH 1 1, 2, 3 - o1 I Logical O input voltage I 0.8 I V 1. 2, 3 o1 - o1 - o1 - o1 - Input high current Input

18、low current vcc f 5.5 v. V - An = CD = 0.5 V I/! = 2.4 V i I 2 I Driver output/receiver input: (Bn) Output low bus voltage V o1 Vcc = 4.5 V, IoL = 80 m4, CO = 0.5 v, An = T/R = 2.4 V I/ o1 IOLBZ Output low bus current Output high bus current I IOHBZ o1 I 2 V Ch-= O V, BN = 2.1 V, T/R = 2.4 V = 5.5 V

19、, An = 0.5 V, T/F = CD = 0.5 V 1 1, 2, 3 o1 1.47 1 1.62 1 V Receiver input threshold STANDARD 5962-95542 MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 )ESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-S

20、MD-5962-95542 999999b 007LLb3 T94 9 TABLE I. Electrical performance characteristics. - continued Condi t ions -55C 5 TC 5 +125C uniessVSF herwise = specified 5 v 2 10% Group A Device Limits subgroups type Min Max V = 5.5 or O V. i6E = 10 ln4 1, 2, 3 vcc = 5.5 V,IC,). to An (tpHZ 5.0 v v V F1.5 V I-

21、and tpZH only) 2.1 v i I I LI 30 L Tm to An, Tn to Bn FIGURE 5. Test circuits and switchinq waveforms. - continued I PF DAYTON, OHIO 45444 I REVISION LEVEL I SHEET 19 DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-3V 1.5 v 1.5

22、V 1 T/R ov vo An, “OL 2.1 v vo Bn VOL ov 3v ov ACLK T/Rto Bn (tpHL and tPLH only) T/Rto An (tpZL and tpLZ only) ov “OH 1.55 V vo Bn PHL- PLH - t- RBYP to Bn STANDARD SIZE I MICROCIRCUIT DIUWING A DAYTON, OHIO 45444 REVISION LEVEL DEFENSE ELECTRONICS SUPPLY CENTER FIGURE 5. Test circuits and switchin

23、u waveform. - continued 5962-95542 SHEET 20 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SND-5qf2-95542 999999b 0071178 415 :onductd devices prior to quality conformance inspection. For device classes Q and V. screening shall be in iccordance with

24、 MIL-1-38535, and shall be conducted on all devices prior to qualification and technology ConfOrnCe inspect ion. 4.2 Screenin . For device class M. screening shall be in accordance with method 5004 of MIL-STO-883, and shall be 4.2.1 Additiona: cr-iteria for device class M. a. Burn-in test, method 10

25、15 of MIL-STO-883. (i) Test condition A, B. C or D. revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance Mith the intent specified in tes

26、t method 1015. The test circuit shall be maintained by the manufacturer under document (2) TA = +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition

27、 and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-1-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MI

28、L-1-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015. b. Interim and final electrical test parameters sh

29、all be as specified in table II herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in appendix B of MIL-1-38535. be in accordance with MIL-i-38535. groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). MIL-STD-883 (see 3.1 her

30、ein) and as specified herein. Inspections to be performed for device class M shall be those specified in method 5005 of MIL-STO-883 and herein for groups A, B. C, D, and E inspections (see 4.4.1 through 4.4.4). Technology conformance inspection for classes Q and V shall be in accordance with MIL-1-3

31、8535 including groups A, B. C. O. and E inspections and as sDecified herein exceDt where oDtion 2 of MIL-1-38535 Dermits alternate in-line Control 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall Inspections to be performed shall be t

32、hose specified in MIL-1-38535 and herein for 4.4 Conformance inspection. Quality conformance inspection for device class M shall be in accordance with STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 testing. 4.4.1 Group A inspection. a. Tests shall be as specified

33、in table II herein. b. For device class M, subgroups 7 and 8 tests shall be sufficient to verify the truth table. Q and V, subgroups 7 and 8 shall include verifying the functionality of the device: these been fault graded in accordance with MIL-STD-883, test method 5012 (see 1.5 herein). SIZE 5962-9

34、5542 A REVISION LEVEL SHEET 21 For device classes ?sts shall have 4.4.2 Group C inspection. 4.4.2.1 Additional criteria for device class M. The group C inspection end-point electrical parameters shall be as specified in table II herein. Steady-state life test conditions, mthod 1005 of MIL-STD-883: a

35、. Test condition A, 6, C or O. The test circuit shall be maintained by the manufacturer under documnt revision level control and shall be made available to the preparing or acquiring activity upon request. circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in ac

36、cordance with the intent specified in test method 1005. The test b. TA = +125OC, minimum. c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STO-883. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-95542 9999996 0071179

37、 351 TABLE II. Electrical test requirements. Devi ce class Q Test resuirements I Subqroups I Dev i ce class V in accordance with 1 ( MIL-STD-883. Group A test requirements (see 4.4) TM 5005, table I) Devi ce I class M 1, 2, 3, 7, 8, 9, 10, 11 Inter im e lectr i Ca 1 parameters (see 4.2) 9, 10, 11 1,

38、 2, 3 1, 2, 3 Fi na1 electrical 1. 2. 3, 7, 8. 9. i/ 10, 11 l- parameters (see 4.2) 9, 10, 11 1, 2, 3 1, 2, 3 Group C end-point electrical parameters (see 4.4) 1, 2, 3 Group D end-point electrical parameters (see 4.4) Group E end-point electrical parameters (see 4.4) 1, 2, 3 Subgroups (in accordance

39、 with HIL-1-38535, table III) 1, 2. 3, 7, 8, I 1,2.3.7.8.9 1 9. 10, 11 lJ 2/LO. 11 3/ PDA applies to subgroup i. - / PDA applies to subgroups 1 and 7. 4.4.2.2 Additional criteria for device classes 0 and V. The steady-state life test duration, test condition and test tenperature, or approved alterna

40、tives shall be as specified in the device manufacturers QM plan in accordance with MIL-1-38535. The test circuit shall be mintained under document revision level control by the device manufacturers TRB, in accordance with MIL-1-38535, and shall be made available to the acquiring or preparing activit

41、y upon request. accordance with the intent specified in test method 1005. herein. hardness assukd (se! 3.5 herein). RHA levels for device classes Q and V shall be M, D, L, R, F, 6, and H and for device class M shall be M and D. The test circuit shall specify the inputs, outputs, biases, and power di

42、ssipation, as applicable, in 4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table II 4.4.4 Grou E ins ection. Group E inspection is required only for parts intended to be marked as radiation a. End-point electrical parameters shall be as spe

43、cified in table II herein. b. For device class M, the devices shall be subjected to radiation hardness assured tests as specified in HIL-1-38535. appendix A, for the RHA level being tested. For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests

44、 as specified in MIL-1-38535 for the RHA level being tested, All device classes nust meet the postirradiation end-point electrical parameter limits as defined in table I at TA = +25Y WC, after exposure, to the subgroups specified in table II herein. c. When specified in the purchase order or contrac

45、t, a copy of the RHA delta limits shall be supplied. 5. PACKAGING 5.1 Packaqina requiremnts. The requirements for packaging shall be in accordance with MIL-STD-883 (SM 3.1 herein) for device class M and MIL-1-38535 for device classes Q and V. 5962-95542 + REVISION LEVEL SHEET STANDARD MICROCIRCUIT D

46、RAWING DEFENSE ELECTBONICS SUPPLY CENTER DAYTON, OBI0 45444 . DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SND-5962-955q2 9999996 007LL80 073 W 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended

47、for use for Governinent microcircuit appl ca t ions (or ig ina 1 equipment ) , design app 1 i cat ions, and log i st i cs purposes. contractor-prepared specificat ion or drawing. 6.1.1 Rep1zceabil;ty. 6.1.2 Substitutability. Device class Q devices will replace device class M devices. 6.2 Confisurati

48、on control of SMDs. All proposed changes to existing SMDs will be coordinated with the users of record for the individual documents. This coordination will be accomplished in accordance with MIL-STD-973 using W Form 1692, Engineering Change Proposal. Military and industrial users shall inform Defens

49、e Electronics Supply Center when a system application requires configuration control and which SMDs are applicable to that system. DESC will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices (FSC 5962) should contact DESC-EC. telephone (513) 296-6047. Microcircuits covered by