DLA SMD-5962-93111 REV B-2005 MICROCIRCUIT DIGITAL ECL QUAD BUS DRIVER MONOLITHIC SILICON《硅单片 双重总线驱动器 ECL数字微型电路》.pdf

《DLA SMD-5962-93111 REV B-2005 MICROCIRCUIT DIGITAL ECL QUAD BUS DRIVER MONOLITHIC SILICON《硅单片 双重总线驱动器 ECL数字微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-93111 REV B-2005 MICROCIRCUIT DIGITAL ECL QUAD BUS DRIVER MONOLITHIC SILICON《硅单片 双重总线驱动器 ECL数字微型电路》.pdf（13页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R237-97. tn. 97-05-16 Raymond Monnin B Update to reflect latest changes in format and requirements. Editorial changes throughout. -les 05-01-06 Raymond Monnin THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN RE

2、PLACED. REV SHET REV SHET REV STATUS REV B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 12 PMIC N/A PREPARED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILAB

3、LE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, ECL, QUAD AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 93-04-27 BUS DRIVER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-93111 SHEET 1 OF 12 DSCC FORM 2233 APR 97 5962-E

4、429-04 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93111 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents

5、two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assur

6、ance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 93111 01 M E AFederal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing numb

7、er 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designa

8、tor. A dash (-) indicates a non-RHA device. 1.2.2 Device type. The device type identifies the circuit function as follows: Device type Generic number Circuit function01 10592 Quad bus driver 1.2.3 Device class designator. The device class designator is a single letter identifying the product assuran

9、ce level as follows: Device class Device requirements documentationM Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outlines.

10、The case outlines are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package styleE GDIP1-T16 or CDIP2-T16 16 dual-in-line F GDFP2-F16 or CDFP3-F16 16 flat 2 CQCC1-N20 20 square chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-

11、38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93111 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL

12、B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage range at VCC= 0 V (VEE) -8.0 V dc minimum to 0.0 V dc maximum Input voltage range (VIN) . 0 V dc to VEEOutput source current, continuous (IO) 50 mA Storage temperature range -65C to +150C Lead temperature (soldering, 10

13、seconds) +300C Junction temperature (TJ) +165C Maximum power dissipation (PD) 2/ 805 mW Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 1.4 Recommended operating conditions. Supply voltage range at VCC= 0 V (VEE) -5.72 V dc minimum to -4.68 V dc maximum Ambient operating temperature ran

14、ge (TA) . -55C to +125C Minimum high level input voltage (VIH): TA= +25C . -0.780 V TA= +125C . -0.630 V TA= -55C -0.880 V Maximum low level input voltage (VIL): TA= +25C . -1.850 V TA= +125C . -1.820 V TA= -55C -1.920 V 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks.

15、 The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manuf

16、acturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard

17、Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)2.2 Order of precedence. In the event of a conf

18、lict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause per

19、manent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Maximum power dissipation is defined as VCCx ICC, and must withstand the added PDdue to output current test e.g., IOSProvided by IHSNot for ResaleNo reproduction or networking per

20、mitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93111 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in a

21、ccordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance wi

22、th MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and h

23、erein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diag

24、ram shall be as specified on figure 3. 3.2.5 Test circuit and switching waveforms. The test circuit and switching waveforms shall be as specified on figure 4. 3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the electrical performan

25、ce characteristics and post-irradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgr

26、oup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking

27、 the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark

28、. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be re

29、quired from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The c

30、ertificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, append

31、ix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device c

32、lass M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity

33、 retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in micro

34、circuit group number 30 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93111 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234

35、APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TA +125C unless otherwise specified Group A subgroups Device type Limits UnitMin Max Cases E, F, and 2 Quiescent conditions 1/ 2/ VIHVILHigh level output VOHVCC= 0.0 V, -0.780 -1.850 1 All -0.100 +0.100 V voltage VEE

36、= -5.2 V -0.630 -1.820 2 -0.100 +0.100 -0.880 -1.920 3 -0.150 +0.050 Low level output VOLOutputs -0.780 -1.850 1 All -0.900 -0.700 V voltage terminated -0.630 -1.820 2 -0.950 -0.700 through 50 -0.880 -1.920 3 -0.850 -0.600 High level threshold VOHAto GND -1.105 -1.475 1 All -0.100 +0.100 V output vo

37、ltage 3/ -1.000 -1.400 2 -0.100 +0.100 -1.255 -1.510 3 -0.150 +0.050 Low level threshold VOLA-1.105 -1.475 1 All -0.900 -0.700 V output voltage -1.000 -1.400 2 -0.950 -0.700 -1.255 -1.510 3 -0.850 -0.600 Power supply IEEVCC= 0.0 V, 1 All -140 mA drain current VEE= -5.2 V 4/ 2, 3 -154 High level inpu

38、t IIHVCC= 0.0 V, VEE= -5.2 V, 1 All 220 A current VIH= -0.780 V at +25C, VIH= -0.630 V at +125C, 2, 3 350 VIH= -0.880 V at -55C Low level input IILVCC= 0.0 V, VEE= -5.2 V 1, 3 All 0.5 A current VIL= -1.850 V at +25C VIL= -1.820 V at +125C 2 0.3 VIL= -1.920 V at -55C Output short circuit current IOSV

39、CC= 0.0 V, VEE= -5.2 V, VOUT= -2.4 V, VIL= -1.850 V, VIH= -0.780 V at +25C, VIL= -1.820 V, VIH= -0.630 V at +125C, VIL= -1.920 V, VIH= -0.880 V at -55C 1 2, 3 All 34.10 34.70 mA VCC= 0.0 V, VEE= -5.2 V, VIH= -0.780 V at +25C, VIH= -0.630 V at +125C, VIH= -0.880 V at -55C VOUT= 270 to +5.5 V 1 2, 3 A

40、ll 104.4 102.2 mA Open collector output current IQOFFVCC= 0.0 V, VEE= -5.2 V, VIH= -0.780 V at +25C, VIH= -0.630 V at +125C, VIH= -0.880 V at -55C Outputs terminated through 50 to GND 1, 2, 3 All 500 A Functional tests VEE= -4.68 V, -5.72 V, See 4.4.1b 7, 8 All See footnotes at end of table. Provide

41、d by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93111 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Sym

42、bol Conditions -55C TA +125C unless otherwise specified Group A subgroups Device type Limits UnitMin Max Cases E, F, and 2 AC test conditions Propagation delay time, tPHL1, VEE= -3.2 V, 9 All 1.5 4.5 ns data to output tPLH1VCC= 2.0 V, 10 1.5 5.6 CL 5 pF, 11 1.5 5.3 Propagation delay time, tPHL2, PS1

43、= 1.11 V at +25C, 9 All 2.0 6.0 ns enable to output tPLH2 = 1.22 V at +125C, 10 1.0 9.0 = 1.03 V at -55C, 11 1.0 6.0 Output rise time tTLH PS2 = 0.31 V at +25C, 9 All 0.5 3.3 ns = 0.345 V at +125C, 10 0.5 4.7 = 0.285 V at -55C, 11 0.5 3.8 Output fall time tTHL Load all outputs through 50 to GND, 9 A

44、ll 0.5 3.3 ns See figure 4 10 0.5 4.7 11 0.5 3.8 1/ The quiescent limits are determined after a device has reached thermal equilibrium. This is defined as the reading taken with the device in a socket with 500 LFPM of +25C, +125C, or -55C (as applicable) air blowing on the unit in a transverse direc

45、tion with power applied for at least four minutes before the reading is taken. This method was used for theoretical limit establishment only. 2/ The T test method creates the limits and test conditions to be used after an increased ambient temperature has been stabilized by external thermal sources.

46、 This adjusted temperature simulates the quiescent method by increasing the specified case temperature (+25C, +125C, -55C) with a T. The T is theoretically determined based on the power dissipation and thermal characteristics of the device and package used. 3/ The high and low level output current v

47、aries with temperature, and shall be calculated using the following formulas: IOH= (-2 V VOH)/100 IOL= (-2 V VOL)/100 4/ The IEElimits, although specified in the minimum column, shall not be exceeded, in magnitude, as a maximum value. Provided by IHSNot for ResaleNo reproduction or networking permit

48、ted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93111 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 Device type 01 Case outlines E F 2 Terminal number Terminal symbol 1 Z2Z4NC 2 Z2Z3Z23 Z1Z3Z24 Z1VCCZ15 D1Z2Z16 D2Z2NC 7 E1Z1D18 VEEZ1D29 E2D1E110 D3D2VEE11 D4E1NC 12 Z4VEEE213 Z4E2D314 Z3D3D415 Z3D4Z416 VCCZ4NC 17 - - - - - - Z418 - - - - - - Z319 - - - - - - Z320 - - - - - - VCCNC = No connection FIGURE 1. Terminal connections.