DLA SMD-5962-93056 REV B-2006 MICROCIRCUIT MEMORY DIGITAL CMOS 8K X 8 NON-VOLATILE STATIC RAM MONOLITHIC SILICON《硅单片 8K X 8可重调静态随机存取存储器 氧化物半导体数字记忆微型电路》.pdf

《DLA SMD-5962-93056 REV B-2006 MICROCIRCUIT MEMORY DIGITAL CMOS 8K X 8 NON-VOLATILE STATIC RAM MONOLITHIC SILICON《硅单片 8K X 8可重调静态随机存取存储器 氧化物半导体数字记忆微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-93056 REV B-2006 MICROCIRCUIT MEMORY DIGITAL CMOS 8K X 8 NON-VOLATILE STATIC RAM MONOLITHIC SILICON《硅单片 8K X 8可重调静态随机存取存储器 氧化物半导体数字记忆微型电路》.pdf（25页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update drawing to current requirements. Editorial changes throughout. gap 01-05-01 Raymond Monnin B Boilerplate update and part of five year review. tcr 06-05-17 Raymond Monnin REV SHET REV B B B B B B B B B B SHEET 15 16 17 18 19 20 21 22 23 24

2、REV STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Tuan Nguyen DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Jeff Bowling COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL

3、DEPARTMENTS APPROVED BY Michael A. Frye AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 93-05-03 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 8K X 8 NON-VOLATILE STATIC RAM, MONOLITHIC SILICON AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-93056 SHEET 1 OF 24 DSCC FORM 2233 APR 97 596

4、2-E460-06 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93056 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documen

5、ts two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness As

6、surance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 93056 01 M X X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing

7、 number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA de

8、signator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Access Store Recall Device type Generic number Circuit function Time Cycle Cycle Endurance 01 10C68 8K X 8 NVSRAM 55 ns 12 ms 25 s 10,000 cycles 02 10C68 8K X 8 NVSRAM

9、45 ns 12 ms 25 s 10,000 cycles 03 10C68 8K X 8 NVSRAM 35 ns 12 ms 25 s 10,000 cycles 04 10C68 8K X 8 NVSRAM 55 ns 12 ms 25 s 100,000 cycles 05 10C68 8K X 8 NVSRAM 45 ns 12 ms 25 s 100,000 cycles 06 10C68 8K X 8 NVSRAM 35 ns 12 ms 25 s 100,000 cycles 1.2.3 Device class designator. The device class de

10、signator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certificat

11、ion and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X CDIP3-T28 or GDIP4-T28 28 Dual-in-line Y CQCC3-N28 28 Rectangular leadless chip carrier 1.2.5 Lead finis

12、h. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93056 DEFENSE SUPPLY CENTER COLU

13、MBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/, 2/ Supply voltage range (VCC) . -0.6 V dc to 7.0 V dc Voltage on DQ (0-7)with outputs in high Z state . -0.5 V to (VCC+ 0.5 V) Input voltage operating range (VIH, VIL) . -0.6 V dc to 7.0 V

14、 dc Storage temperature range . -65C to +150C Maximum power dissipation (PD) 1.0 W Maximum output current . 15 mA Lead temperature (soldering) 300C Junction temperature (Tj) 3/ . 175C Thermal resistance, junction to case (jc): See MIL-STD-1835 Data retention . 10 Years to nonvolatile array (minimum)

15、 Endurance (as store cycles to non-volatile array) . Per 1.2.2 1.4 Recommended operating conditions. Supply voltage range (VCC) +4.5 V dc to +5.5 V dc Case operating temperature range (TC) -55C to +125C Input voltage, low range (VIL) VSS -0.5 V dc to 0.8 V dc, all inputs Input voltage, high range (V

16、IH) 2.2 V dc to VCC +0.5 V dc, all inputs 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are th

17、ose cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case

18、Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document

19、Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may affect reliability. This is a stress rating only, and functional operation of the device at

20、conditions above those indicated in the operational sections of this specification is not implied. 2/ All voltages are referenced to VSS(ground). 3/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of M

21、IL-STD-883. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93056 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 2.2 Non-Government publications. The f

22、ollowing documents form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation. ELECTRONIC INDUSTRIES ALLIANCE (EIA) JEDEC Standard EIA/JESD 78 - IC Latch-Up Test. (Applications for cop

23、ies should be addressed to the Electronics Industries Association, 2500 Wilson Boulevard, Arlington, VA 22201; http:/www.jedec.org.) (Non-Government standards and other publications are normally available from the organizations that prepare or distribute the documents. These documents also may be av

24、ailable in or through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulat

25、ions unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modifi

26、cation in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimension

27、s. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. T

28、he terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Functional tests. Various functional tests used to test this device are contained in the appendix. If the test patterns cannot be implemented due to test equipment l

29、imitations, alternate test patterns to accomplish the same results shall be allowed. For device class M, alternate test patterns shall be maintained under document revision level control by the manufacturer and shall be made available to the preparing or acquiring activity upon request. For device c

30、lasses Q and V alternate test patterns shall be under the control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the preparing or acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation

31、 parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall b

32、e the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasibl

33、e due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in acco

34、rdance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. Provided by IHSNot for R

35、esaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93056 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 3.6 Certificate of compliance. For device classes Q and V, a certificate o

36、f compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (

37、see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements

38、of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notificatio

39、n of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, an

40、d the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this d

41、rawing shall be in microcircuit group number 41 (see MIL-PRF-38535, appendix A). 3.11 Endurance. A reprogrammability test shall be completed as part of the vendors reliability monitors. This reprogrammability test shall be done for initial characterization and after any design or process changes whi

42、ch may affect the reprogrammability of the device. The methods and procedures may be vendor specific, but shall guarantee the number of program/erase endurance cycles listed in section 1.3 herein over the full military temperature range. The vendors procedure shall be kept under document control and

43、 shall be made available upon request of the acquiring or preparing activity, along with test data. 3.12 Data retention. A data retention stress test shall be completed as part of the vendors reliability monitors. This test shall be done for initial characterization and after any design or process c

44、hanges which may affect data retention. The methods and procedures may be vendor specific, but shall guarantee the number of years listed in section 1.3 herein over the full military temperature range. The vendors procedure shall be kept under document control and shall be made available upon reques

45、t of the acquiring or preparing activity, along with test data. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93056 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FOR

46、M 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TC +125C 4.5 V VCC 5.5 V VSS= 0 V, IOUT= 0 mA Group A subgroups Device type Limits Unit unless otherwise specified Min Max Input leakage current IILVCC= 5.5 V 1, 2, 3 All 1 A (any input) VIN= VSSto VCCHigh imp

47、edance output IOLVCC= 5.5 V 1, 2, 3 All 5 A leakage current VIN= VSSto VCCInput logic “1“ voltage VIHAll Inputs 1, 2, 3 All 2.2 VCC+.5 V Input logic “0“ voltage VILAll Inputs 1, 2, 3 All VSS-.5 0.8 V Output logic “1“ voltage VOHIOH= -4 mA 1, 2, 3 All 2.4 V Output logic “0“ voltage VOLIOL= 8 mA 1, 2,

48、 3 All 0.4 V VCCcurrent 1/ ICC1Addresses cycling at tAVAV1, 2, 3 01, 04 70 mA 02, 05 75 03, 06 80 VCCcurrent 2/ ICC2E ( VCC- 0.2V); all other 1, 2, 3 All 50 mA during store cycle inputs VIN 0.2 V or (VCC- 0.2 V) VCCcurrent (standby, ICC3E VIH; all others cycling 1, 2, 3 01, 04 20 mA cycling TTL input levels) 3/ 02, 05 23 03, 06 27 VCCDC current (standby, ICC4E (VCC- 0.2 V); all 1, 2, 3 All 2 mA stable CMOS input levels) others VIN 0.2 V or 2/ (VCC- 0.2V) Input capacitance 4/ CINVIN= 0 V 4 All 5 pF TA= 25C, f = 1.0 MHz See 4.4.1e Output