DLA SMD-5962-91752 REV B-2006 MICROCIRCUIT MEMORY DIGITAL CMOS 512K X 8-BIT UVEPROM MONOLITHIC SILICON《硅单块 互补金属氧化物半导体512K X 8比特紫外线消除式可程序化只读存储器 数字主储存器微型电路》.pdf

《DLA SMD-5962-91752 REV B-2006 MICROCIRCUIT MEMORY DIGITAL CMOS 512K X 8-BIT UVEPROM MONOLITHIC SILICON《硅单块 互补金属氧化物半导体512K X 8比特紫外线消除式可程序化只读存储器 数字主储存器微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-91752 REV B-2006 MICROCIRCUIT MEMORY DIGITAL CMOS 512K X 8-BIT UVEPROM MONOLITHIC SILICON《硅单块 互补金属氧化物半导体512K X 8比特紫外线消除式可程序化只读存储器 数字主储存器微型电路》.pdf（15页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update drawing to reflect current requirements. Editorial changes throughout. - gap 01-03-09 Raymond Monnin B Boilerplate update and part of five year review. tcr 06-10-03 Raymond Monnin REV SHET REV SHET REV STATUS REV B B B B B B B B B B B B B

2、B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Gary L. Gross DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY William J. Johnson COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A

3、. Frye MICROCIRCUIT, MEMORY, DIGITAL, CMOS 512K X 8-BIT UVEPROM, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 93-01-18 AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-91752 SHEET 1 OF 14 DSCC FORM 2233 APR 97 5962-E601-06 Provided by IHSNot for ResaleNo re

4、production or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91752 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consis

5、ting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PI

6、N. 1.2 PIN. The PIN is as shown in the following example: 5962 - 91752 01 M X X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes

7、 Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA dev

8、ice. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function Access time 01 27C040 (512K x 8) UVEPROM 250 ns 02 27C040 (512K x 8) UVEPROM 200 ns 03 27C040 (512K x 8) UVEPROM 170 ns 04 27C040 (512K x 8) UVEPROM 150 ns 05 27C040 (5

9、12K x 8) UVEPROM 120 ns 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B mi

10、crocircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X CDIP2-T32 or GDIP1-T32 32 Dual

11、-in-line package 1/ Y CQCC1-N32 32 Rectangular leadless chip carrier 1/ 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. _ 1/ Lid shall be transparent to permit ultraviolet light erasure. Provided by IHSNo

12、t for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91752 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Storage temperature range . -65C t

13、o +150C All input or output voltage with respect to ground -0.6 V dc to VCC+0.5 V dc Voltage on A9 with respect to ground -0.6 V dc to +13.0 V dc VPPsupply voltage range with respect to ground during programming -0.6 V dc to +13.5 V dc VCCsupply voltage range with respect to ground -0.6 V dc to +7.0

14、 V dc Maximum power dissipation (PD) . 330 mW Lead temperature (soldering, 10 seconds) +300C Thermal resistance, junction-to-case (JC): Case X and Y . See MIL-STD-1835 Junction temperature (TJ) +150C 2/ Endurance . 50 cycles/byte, minimum Data retention 10 years, minimum 1.4 Recommended operating co

15、nditions. Case operating temperature range (TC) -55C to +125C Supply voltage (VCC) . 4.5 V dc to 5.5 V dc 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein.

16、Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircui

17、ts. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or

18、 http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affe

19、ct reliability. 2/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUI

20、T DRAWING SIZE A 5962-91752 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 2.2 Non-Government publications. The following documents form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the docu

21、ments are the issues of the documents cited in the solicitation. ELECTRONIC INDUSTRIES ALLIANCE (EIA) JEDEC Standard EIA/JESD 78 - IC Latch-Up Test. (Applications for copies should be addressed to the Electronics Industries Alliance, 2500 Wilson Boulevard, Arlington, VA 22201; http:/www.jedec.org.)

22、(Non-Government standards and other publications are normally available from the organizations that prepare or distribute the documents. These documents also may be available in or through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict between the tex

23、t of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for devic

24、e classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device cl

25、ass M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or

26、MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.

27、3.1 Unprogrammed devices. The truth table for unprogrammed devices for contracts involving no altered item drawing shall be as specified on figure 2. When required in screening (see 4.2) group A, C, or D (see 4.3), the devices shall be programmed by the manufacturer prior to test with a checkerboard

28、 pattern or equivalent (a minimum of 50 percent of the total number of bits programmed) or to any altered item drawing pattern which includes at least 25 percent of the total number of bits programmed. 3.2.3.2 Programmed devices. The truth table for programmed devices shall be specified by an altere

29、d item drawing. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature ran

30、ge. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be

31、 marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall b

32、e in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M sh

33、all be a “C“ as required in MIL-PRF-38535, appendix A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91752 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 AP

34、R 97 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manuf

35、acturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the re

36、quirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be pro

37、vided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verifi

38、cation and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircui

39、t group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 42 (see MIL-PRF-38535, appendix A). 3.11 Processing EPROMS. All testing requirements and quality assurance provisions herein, shall be satisfied by the manufacturer prior to de

40、livery. 3.11.1 Erasure of EPROMS. When specified, devices shall be erased in accordance with the procedures and characteristics specified by the manufacturer. 3.11.2 Programmability of EPROMS. When specified, devices shall be programmed to the specified pattern using the procedures and characteristi

41、cs specified by the manufacturer. 3.11.3 Verification of programmed or erased EPROMs. When specified, devices shall be verified as either programmed to a specified program, or erased. As a minimum, verification shall consist of performing a functional test (subgroup 7) to verify that all bits are in

42、 the proper state. Any bit that does not verify to be in the proper state shall constitute a device failure, and shall be removed from the lot. 3.12 Data retention. A data retention stress test shall be completed as part of the vendors reliability monitors. This test shall be done for initial charac

43、terization and after any design or process change which may affect data retention. The methods and procedures may be vendor specific, but shall guarantee the number of years listed in section 1.3 herein over the full military temperature range. The vendors procedure shall be kept under document cont

44、rol and shall be made available upon request of the acquiring or preparing activity, along with test data. 3.13 Endurance. A reprogrammability test shall be completed as part of the vendors reliability monitors. This test shall be done for initial characterization and after any design or process cha

45、nge which may affect the reprogrammability of the device. The methods and procedures may be vendor specific, but shall guarantee the number of program/erase endurance cycles listed in section 1.3 herein over the full military temperature range. The vendors procedure shall be kept under document cont

46、rol and shall be made available upon request of the acquiring or preparing activity, along with test data. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91752 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4

47、3218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TC +125C 4.5 V VCC 5.5 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max Input load current ILIVIN= 0 V to 5.5 V 1, 2, 3 All -10 +10 A Ou

48、tput leakage current IL0VOUT= 0 V to 5.5 V 1, 2, 3 All -10 +10 A VPPload current read IPP1VPP= 5.5 V 1, 2, 3 All 100 A VCCactive current ICC1CE = VIL, IOUT= 0 mA, 1, 2, 3 All 60 mA VCC= VPP= 5.5 V, f = 1/tAVQVVCCstandby ICC2CE = VIH, 1, 2, 3 All 1 mA current (TTL) VCC= 5.5 V VCCsuper standby ICC3CE = VCC0.3 V, 1, 2, 3 All 100 A current (CMOS) VCC= 5.5 V Input low voltage VIL1, 2, 3 All -0.1 0.8 V 1/ Input high voltage VIH1, 2, 3 All 2.0 VCC+0.5V V 1/ Output low voltage VOLIOL= 2.1 mA, 1, 2, 3 All 0.45 V VIL= 0.8 V, IH= 2.0 V Output high voltage VOH