DLA SMD-5962-90963-1992 MICROCIRCUIT DIGITAL CMOS 16 19 BIT FFT CONTROLLER AND ARITHMETIC UNIT MONOLITHIC SILICON《硅单块 16 19比特快速傅里叶变换控制器和运算器 互补金属氧化物半导体 数字微型电路》.pdf
《DLA SMD-5962-90963-1992 MICROCIRCUIT DIGITAL CMOS 16 19 BIT FFT CONTROLLER AND ARITHMETIC UNIT MONOLITHIC SILICON《硅单块 16 19比特快速傅里叶变换控制器和运算器 互补金属氧化物半导体 数字微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-90963-1992 MICROCIRCUIT DIGITAL CMOS 16 19 BIT FFT CONTROLLER AND ARITHMETIC UNIT MONOLITHIC SILICON《硅单块 16 19比特快速傅里叶变换控制器和运算器 互补金属氧化物半导体 数字微型电路》.pdf(44页珍藏版)》请在麦多课文档分享上搜索。
1、LTR .? . SMD-5962-90963 59 m 9999996 0023396 LOT m DESCRIPTION DATE (YR-HO-DA) APPROVED REV STATUS STANDARDIIED MILITARY DRAWING MICROCIRCUIT, DIGITAL, CMOS, 16/19 BIT FFT CONTROLLER AND ARITHMETIC UNIT, MONOLITHIC SILICON THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPA
2、RTHENT OF DEFENSE AIISC N/A SHEET 1 OF 43 JUL 91 5962-EO75 DISTRIBUTION STATEHENT A. Approved for public release; distribution is unlimited. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5762-90963 57 I 9997776 0023777 O46 STANDARDIZED MILITARY
3、 DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 1. SCOPE 1.1 Scope. This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and space application
4、(device classes S and V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class H microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, iProvisions for the use of MIL-STD-883 in c
5、onjunction with coipliant non-JAN devices“. available, a choice of radiation hardness assurance (RHA) levels are reflected in the PIN. When 1.2 m. The PIN shall be as shown in the following exemple: SIZE 5962-90963 A REVISION LEVEL SHEET 2 - X - X - M - 5962 90963- o1 I I 1 I I I I I I I I I Lcad Ca
6、se i Device i Device RHA i Federal stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 Radiation hardness assurance (RHA) desianator. Device classes H, B, and S RHA marked devices shall meet the D
7、evice classes Q and V RHA MIL-M-38510 specified RHA levels and shall be marked with the appropriate RHA designator. markeddevices shall meet the MIL-1-36535 specified RHA Ievels and shall be mmrked with the appropriate RW designator. A dash (-1 indicates a non-RHA device. 1.2.2 Device tYDe(s). The d
8、evice type(s) shall identify the circuit function as follows: Device type Generic nuaber Circuit function Frwency o1 TMC2310V CMOS 16/19-bit FFT Controller and Arithmetic Unit 15 HHz o2 TnC23lOvl CMOS 16/19-bit FFT Controller and Arithmetic Unit 20 HHz 1.2.3 Device class designator. The device class
9、 designator shall be a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 El or S Q or V Certification and qualifica
10、tion to MIL-M-38510 Certification ancl qualification to MIL-1-38535 1.2.4 Case outLineW. The case outlinds) shall be as designated in MIL-STD-1835 and as follows: Outline letter Descript i ve desiqnator Terminals Packacre stvle X Y See figure 1 See figure 1 88 Pin grid array package 100 Flat package
11、 1.2.5 Lead finish. The lead finish shall be as specified in MIL-M-38510 for classes N, B, and S or NIL-1-38535 for classes Q and V. Finish letter “X“ shall not be marked on the microcircuit or its packaging. for use in specifications when lead finishes A, 8, and C are considered acceptable and inte
12、rchangeable without preference. The “X“ designation is DESC FORM 193A JUL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-.k STAIJDARDIZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 1 SIZE 5962-90963 A REVISION LEVEL SHE
13、ET 3 1.3 Absolute maximum ratings. I/ Supply voltage range Inputvoltagerange . Applied output voltage range 21 . Forced output current rangez/,*/ Output short circuit duration 5/ Power dissipation, unloaded (P ) o/ . Lead temperature (soldering, 18 srcamls) Thermal resistance, junction-to-case (eJc)
14、: Case outline X Case outline Y Junction teverature (TJ) Storage temperature range -0.5 V dc to +7.0 V dc -3.0 IA to +6.8D 1 .O second 88o.v +Mo“C 12OC/U 9OC/U +17SC -65OC to +150c -0.5 V dc to VDD + 0.5 V dc -0.5 V dc to V + 0.5 V dc 1.4 Recommended -rating conditions. Supply voltage range WDD) Inp
15、ut low voltage (V ) . 0.8 V dc maximum Input high voltage (ai,) 2.0 V dc minimum Input high voltage, c ock (VIHC) 2.3 V dc minimum Output low current (1 L) 4.0 IA maximum Output high current ( these tests shall have been fault graded in accordance with MIL-STD-883, test method 5M2 (see 1.5 herein).
16、For device classes Q and V, subgroups 7 and 8 shall include verifying the c. Subgroup 4 (CI, measurements) shall be measured only for the initial test and after process or design changes which may%ect capacitance. A minimum sample size of 5 devices with zero rejects shall be required. _ DESC FORM 19
17、3A JL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59b2-909b3 59 999999b 0023805 T42 TABLE IIA. Electrical test rcauireaents. i I I I Test requirements Subgroups i subgroups i (per method 5005,table I) (per MIL-1-38535, I I table III) I I i
18、 Device i Device i Device i Device i Device i I class I class I class I class I class I i I I InlBlslQlvl I interim electrical I 1t7r9 I 1,7,9 I 1,7,9 I 1,789 I 1,7,9 I I wrameters (see 4.2) I I I I I I I I I I I - I I Final electrical I parameters (see 4.2) I Group A test I requirements (see 4.4) I
19、 Grwp B end-point electrical I parameters (see 4.4) I 1,2,3,4, i 1,2,3,4, 11 11; 7,8,9,10,17 8 9 10, i I I l i I I I t I I i I I I i I I I i I I I I I I I I I Croup C end-point electrical I 1,2,7,9 I 1,2,7,9 I I 1,2,7,9 I 1,2,7,9 I I parameters (see 6-41 I I I I I I t I I I I l I parameters (see 4.1
20、) I I I I I I I 1 I I I I Group D end-point electrical I 1,2,7,9 I 1,2,7,9 I 1,2,7,9 I 1,2,7,9 1 1,2,7,9 I I I I l l I I I Grwp E end-point electrical I 1,2,7,9 I 1,2,7,9 I 1,2,7,9 I 1,2,7,9 I 1,2,7,9 I I paraaetcrs (see 4.4) I I I I I I I/ PDA applies to subgroup 1. - Z/ PDA applies to subgroups I
21、and 7. I 4.4.2 Grow 8 inspcction. The group B inspection end-point electrical parameters shall be as specified in table The group C inspection end-point electrical parameters shall be as specified in table III herein. 4.4.3 GrWD C inspection. IIA herein. 4.4.3.1 Additional criteria for device classe
22、s M, B. and S. Steady-state life test conditions, method 1005 of RIL-STD-883: a. Test condition A, El, C, or D. with the certificate of compliance. qualifying activity. For device class il, the test circuit shall be submitted to DESC-ECC for review For device classer B and S, the test circuit shall
23、be submitted to the b. TA = +12SDC, minimum. c. Test duration: 1,oM) hours, except as permitted by method 1005 of MIL-STD-883. 4.4.3.2 Additional criteria for device classes Q and V. The steady-state Life test duration, test condition and test temperature or approved alternatives shall be as specifi
24、ed in the device manufacturers CW plan in accordance uith MIL-1-38535. compliance and shall be under the control of the device manufacturers TRB in accordance uith MIL-1-38535. The steady-state life test circuit shall be submitted to DESC-ECC uith the certificate of 4.4.4 Grow D inswction. The group
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