DLA SMD-5962-89876 REV B-2002 MICROCIRCUIT LINEAR TRANSISTOR ARRAY MONOLITHIC SILICON《硅单片 晶体管阵列 线性微型电路》.pdf
《DLA SMD-5962-89876 REV B-2002 MICROCIRCUIT LINEAR TRANSISTOR ARRAY MONOLITHIC SILICON《硅单片 晶体管阵列 线性微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-89876 REV B-2002 MICROCIRCUIT LINEAR TRANSISTOR ARRAY MONOLITHIC SILICON《硅单片 晶体管阵列 线性微型电路》.pdf(10页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with N.O.R. 5962-R005-93. 92-10-27 M. A. FRYE B Drawing updated to reflect current requirements. - ro 02-12-02 R. MONNIN THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV SHET REV STATUS REV B B B B B
2、B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 PMIC N/A PREPARED BY DAN WONNELL DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY CHARLES E. BESORE COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL A. FRYE MICROCIRCU
3、IT, LINEAR, TRANSISTOR ARRAY, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 92-08-27 AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-89876 SHEET 1 OF 9 DSCC FORM 2233 APR 97 5962-E104-03 DISTRIBUTION STATEMENT A. Approved for public release; distribution is
4、 unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89876 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing descri
5、bes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. 1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example: 5962-89876 01 E X Drawing number Device type (see 1.2.1) Case outline (see
6、 1.2.2) Lead finish (see 1.2.3) 1.2.1 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 2023 7 gate darlington transistor array 1.2.2 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outli
7、ne letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line F GDFP2-F16 or CDFP3-F16 16 Flat pack 1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A. 1.3 Absolute maximum ratings. Output voltage (VCE) . 95 V dc Input voltage (VIN) .
8、30 V dc Peak output current (IOUT) 500 mA Ground terminal current (IGND) . 3.0 A Continuous input current (IIN) 25 mA Power dissipation (PD): Case outline E 1.0 W 1/ Case outline F . 1.09 W 1/ Storage temperature range -65C to +150C Junction temperature (TJ) +175C Thermal resistance, junction-to-cas
9、e (JC) See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA) Case outline E 80C/W Case outline F . 115C/W 1.4 Recommended operating conditions. Ambient operating temperature range (TA) -55C to +125C _ 1/ Absolute maximum rating for power dissipation is for one darlington pair only. Derate ca
10、se outline E at 12.5 mW/C above +25C ambient. Derate case outline F at 8.7 mW/C above +25C ambient. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89876 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-50
11、00 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these document
12、s are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DE
13、FENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of t
14、he specification, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this
15、 drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class leve
16、l B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer Listing (QML) certified and qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-PRF-38535 may be processed as QML product in accordance with the
17、 manufacturers approved program plan and qualifying activity approval in accordance with MIL-PRF-38535. This QML flow as documented in the Quality Management (QM) plan may make modifications to the requirements herein. These modifications shall not affect form, fit, or function of the device. These
18、modifications shall not affect the PIN as described herein. A “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 is required to identify when the QML flow option is used. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as sp
19、ecified in MIL-PRF-38535, appendix A and herein. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.2 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Switching test circuit and waveforms. Switching test circuit and waveforms s
20、hall be as specified on figure 2. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the full ambient operating temperature range. Provided by IHSNot for ResaleNo reproduction or n
21、etworking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89876 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TA +125C unless otherw
22、ise specified Group A subgroups Device type Limits Unit Min Max Output leakage current ICEXVCE= 95 V 1,2,3 01 100 A Collector emitter saturation voltage VCE(sat)IC= 350 mA, IB= 500 A 2 01 1.8 V IC= 200 mA, IB= 350 A 1.5 IC= 100 mA, IB= 250 A 1.3 IC= 350 mA, IB= 500 A 1 1.6 IC= 200 mA, IB= 350 A 1.3
23、IC= 100 mA, IB= 250 A 1.1 IC= 350 mA, IB= 850 A 3 1.8 IC= 200 mA, IB= 550 A 1.5 IC= 100 mA, IB= 350 A 1.3 Input voltage VIN(ON)VCE= 2.0 V, IC= 200 mA 2 01 2.4 V VCE= 2.0 V, IC= 250 mA 2.7 VCE= 2.0 V, IC= 300 mA 3.0 VCE= 2.0 V, IC= 200 mA 1,3 3.3 VCE= 2.0 V, IC= 250 mA 3.6 VCE= 2.0 V, IC= 300 mA 3.9
24、Input current IIN(ON)VIN= 3.85 V 1,2,3 01 650 1350 A Input current IIN(OFF)IC = 500 A 2 01 20 A See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89876 DEFENSE SUPPLY CENTER COLUM
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