DLA SMD-5962-88506-1988 MICROCIRCUITS N-CHANNEL MOS MULTIFUNCTION PERIPHERAL MONOLITHIC SILICON《硅单片N通道MOS多功能周边微电路》.pdf
《DLA SMD-5962-88506-1988 MICROCIRCUITS N-CHANNEL MOS MULTIFUNCTION PERIPHERAL MONOLITHIC SILICON《硅单片N通道MOS多功能周边微电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-88506-1988 MICROCIRCUITS N-CHANNEL MOS MULTIFUNCTION PERIPHERAL MONOLITHIC SILICON《硅单片N通道MOS多功能周边微电路》.pdf(27页珍藏版)》请在麦多课文档分享上搜索。
1、REVISIONS LTR DESCRIPTION I DESC-DWG-8850b 57 0 7797775 0011798 7 - DISTRIBUTION STATEMENT A. Approved for public release; distribution Is unlimited. 1 /- I - -7 _ _ PMIC N/A STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPAmEMS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMS
2、C NIA I I SHEET 1 OF 27 I PREPAREDBY 1 DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 MICROCIRCUITS, N-CHANNEL MOS MULTIFUNCTION PERIPHERAL, MONOLITHIC SILICGN 59 6 2-8 8506 SIZE CAGE CODE A 67268 25 APRIL 1988 I RVSINLEVEL t I . DESC FORM 193 SEP 87 U.S. GOVfRWNT PRINTING OFFICE: 1987 - 748-1
3、2916091 1 5962- E693 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-r SIZE A STANDARDIZED 1. SCOPE 5962-88506 1.1 SCO e. This drawing describes device requirements for clas? El microcircuit? in accordance rith 1.7.0 V dc -65C to +150 C 1.5 +270 C +1
4、70C See MIL-M-38510, appendix C Recommended operating conditions. Supply vol tage: VCC-“ vss-“ High level input voltage (logic inputsI(V1 1 - - - - - Low level input voltage (logic inputs)(VIL r - - - - - - Minimum high level output voltage - - - - - - - - - - - Maximum low level output voltage - -
5、- - - - - - - - - Frequency of operation: Case operating temperature range (TC) - - - - - - - - - Devicetype01 _-_- Device type 02 - - - - - - - - - I - - - - - - - - - 4.75 V dc to 5.25 V dc ov 2.0 v to vc GND to 0.8 dc 2.4 V dc 0.5 V dc 1.0 to 4.0 MHz 1.0 to 5.0 MHz -55C to +125C Provided by IHSNo
6、t for ResaleNo reproduction or networking permitted without license from IHS-,-,-ind as specified herein. SIZE A STANDARMZED 3.2 Design, construction, and physical dimensions. The design, construction, and physical iimensions shall be as specified in MIL-M-38510 and herein. 5962-88506 3.2.1 Case out
7、lines. The case outlines shall be in accordance with 1.2.2 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Block diagram. The block diagram shall be as specified on figure 2 3.3 Electrical performance characteri stics. Unless otherwise specified,
8、 the electrical ierformance characteristics are as specified in table I and apply over the full recommended case sperati ng temperature range. 2. APPLICABLE DOCUMENTS 2.1 .Government specification and standard. Unless otherwise specified, the following ipecification and standard, of the issue listed
9、 in that issue of the Department of Defense Index of ;pecifications and Standards specified in the solicitation, form a part of this drawing to the !xtent specified herein. SPECIFICATION MILITARY I4 IL -M- 385 10 - Microcircuits, General Specification for. STAN DARD MILITARY MI L-STD-883 - Test Meth
10、ods and Procedures for Microelectronics. (Copies of the specification and standard required by manufacturers in connection with specific icquisition functions should be obtained from the contracting activity or as directed by the :ontracting activity. 1 *eferences cited herein, the text of this draw
11、ing shall take precedence. 2.2 Order of precedence. 3. REQUIREMENTS 3.1 In the event of a conflict between the text of this drawing and the Item requirements. The individual item requirements shall be in accordance with 1.2.1 of IIL-STD-883. “Provisions for the use of MIL-STD-883 in conjunction with
12、 compliant non-JAN devices“ DESC-DWG-85b 57 0 9977775 OOLZOOO T E I DESC FORM 193A U S GOVERNMENT PRINTING OFFICE 1987-549096 SEP 87 / P /y 3 3.4 Marking. Marking shall be in accordance with MIL-STD-883 (see 3.1 herein). The part shal In addition, the manufacturers part number be marked with the par
13、t number listed in 1.2 herein. nay also be marked as listed in 6.5 herein. 3.5 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in 6.5. The certificate of compliance submitted to DESC-ECS prior to listi
14、ng as an approved source of supply shall state that the nanufacturers product meets the requirements of MIL-STD-883 (see 3.1 herein) and the requirements herein. 3.6 Certificate of conformance. A certificate of conformance as required in MIL-STD-883 (see 3.1 herein) shall be provided with each lot o
15、f microcirulits delivered to this drawing. 3.7 Notification of change. Notification of change to DESC-ECS shall be required in accordance with MIL-STD-883 ( see 3.1 herein). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-TABLE , El ectrical performa
16、nce characteristics. Test i Symbol I I VOL I Power supply current I Icc outputs open Low level out ut voltage (except tilTA&) Hi h level output voltage IVOH I Qexcept TIXK) DTXR output source current IOH I I I IOL I DTACR output sink current Input leakage current IIIM I Three-state output current I
17、ILOH Three-state output current / ILOL in float I in float I Hi h level input voltage /VIH I !ail inputs) Low 1 eve1 input vol tage )VIL (all inputs) I Input capacitance ICIN I Three-state output I COUT Functional tests I I See footnotes at end of table capacitance Conditions unlesibotherwise specif
18、ied VCC = 5.25 V VOUT = 2.4 V VIN I O to 5.25 V See 4.3.1 See 4.3.1 See 4.3.ld I I roup A 1 Limits iUnit iubgroups I I I I Min I Max I I I I I 1,2,3 I I 180 I mA 7- I I 1,2,3 1 I 0.5 I V I I I 1,2,3 I 2.4 V I I I I 1,2,3 I I I I 1-40 I DA I I I I I I I I 1,2,3 I I 5.3 I mA I I I I I I 1,2,3 I -10 I
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