DLA SMD-5962-88503 REV J-2003 MICROCIRCUIT LINEAR DUAL MOSFET DRIVERS MONOLITHIC SILICON《硅单片双金属-氧化物半导体场效应晶体管驱动器线性微电路》.pdf
《DLA SMD-5962-88503 REV J-2003 MICROCIRCUIT LINEAR DUAL MOSFET DRIVERS MONOLITHIC SILICON《硅单片双金属-氧化物半导体场效应晶体管驱动器线性微电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-88503 REV J-2003 MICROCIRCUIT LINEAR DUAL MOSFET DRIVERS MONOLITHIC SILICON《硅单片双金属-氧化物半导体场效应晶体管驱动器线性微电路》.pdf(13页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED C Redrawn with changes. Table I changes. Delete vendor CAGE 15818. Add vendor CAGE 1ES66 for device types 01, 02, and 03. Add vendor CAGE 60496 for device types 01 through 09. - sbr 92-10-22 M. A. Frye D Changes in accordance with NOR 5962-R015-93.
2、 - sbr 92-12-04 M. A. Frye E Changes in accordance with NOR 5962-R154-94. - drw 93-05-04 M. A. Frye F Changes in accordance with NOR 5962-R267-94 - sbr 94-08-29 M. A. Frye G Redraw. Incorporate NORs. Editorial changes throughout. - drw 00-04-12 Raymond Monnin H Add device type 10. Add case outline “
3、X”. Editorial changes throughout. - drw 03-06-03 Raymond Monnin J Change latch-up test limit in table I for device type 10. - drw 03-07-28 Raymond Monnin THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV SHET REV STATUS REV J H H H H J H H H H H OF SHEETS SHEET 1 2 3 4 5 6 7 8
4、9 10 11 PMIC N/A PREPARED BY Marcia B. Kelleher DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Ray Monnin COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY D. A. DiCenzo MICROCIRCUIT, LINEAR, DUAL MOSFET DRIVERS, MON
5、OLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 88-07-25 AMSC N/A REVISION LEVEL J SIZE A CAGE CODE 67268 5962-88503 SHEET 1 OF 11 DSCC FORM 2233 APR 97 5962-E506-03 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot fo
6、r ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88503 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL H SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing describes device requirements for MIL-
7、STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. 1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example: 5962-88503 01 P A Drawing number Device type (see 1.2.1) Case outline (see 1.2.2) Lead finish (see 1.2.3)
8、1.2.1 Device types. The device types identify the circuit function as follows: Device type Generic number Circuit function Output current 01 TSC426, MIC426 Dual power MOSFET driver 1.5 A dc 02 TSC427, MIC427 Dual power MOSFET driver 1.5 A dc 03 TSC428, MIC428 Dual power MOSFET driver 1.5 A dc 04 MIC
9、4423 Dual high power MOSFET driver 3.0 A dc 05 MIC4424 Dual high power MOSFET driver 3.0 A dc 06 MIC4425 Dual high power MOSFET driver 3.0 A dc 07 MIC4426 Dual power MOSFET driver with latch 1.5 A dc proof output for inductive loads 08 MIC4427 Dual power MOSFET driver with latch 1.5 A dc proof outpu
10、t for inductive loads 09 MIC4428 Dual power MOSFET driver with latch 1.5 A dc proof output for inductive loads 10 AS404 Dual high power MOSFET driver 2.0 A dc 1.2.2 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Pack
11、age style 2 CQCC1-N20 20 Square leadless chip carrier H GFP1-F10 or CDFP2-F10 10 Flat pack P GDIP1-T8 or CDIP2-T8 8 Dual-in-line X CDFP3-F10 10 Flat pack 1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A. Provided by IHSNot for ResaleNo reproduction or networking permit
12、ted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88503 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL H SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. Supply voltage (VS): Device types 01 through 03 . 20 V dc Device types 04 through 10
13、. 22 V dc Input voltage (VIN): Device types 01 through 03 . VS+ 0.3 V dc to GND 0.3 V dc Device types 04 through 10 . VS+ 0.5 V dc to GND 5.0 V dc Output current (per pin, capacitance load): Device types 01, 02, 03, 07, 08, and 09 1.5 A dc Device type 10 2.0 A dc Device types 04, 05, and 06 3.0 A dc
14、 Peak supply current or GND current (per pin). 3.0 A dc Storage temperature range -55C to +150C Maximum power dissipation (PD): Case P and X . 800 mW 1/ Case 2 1.8 W 2/ Lead temperature (soldering, 10 seconds) +300C Junction temperature (TJ) +150C Thermal resistance, junction-to-case (JC) See MIL-ST
15、D-1835 1.4 Recommended operating conditions. Supply voltage range . 4.5 V dc VS 18 V dc Ambient operating temperature range (TA) . -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this d
16、rawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38
17、535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Dr
18、awings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 1/ Derate linearly at 6.4 mW/C above TA
19、= +25C. 2/ Derate linearly at 14.4 mW/C above TA= +25C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88503 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL H SHEET 4 DSCC FORM 2234 A
20、PR 97 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUI
21、REMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer Listing (QML) certified and qualified manufactur
22、er or a manufacturer who has been granted transitional certification to MIL-PRF-38535 may be processed as QML product in accordance with the manufacturers approved program plan and qualifying activity approval in accordance with MIL-PRF-38535. This QML flow as documented in the Quality Management (Q
23、M) plan may make modifications to the requirements herein. These modifications shall not affect form, fit, or function of the device. These modifications shall not affect the PIN as described herein. A “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 is required to identify when the
24、QML flow option is used. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535, appendix A and herein. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.2 herein. 3.2.2 Terminal connections. Th
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