DLA SMD-5962-79014 REV B-1987 MICROCIRCUIT DIGITAL CMOS HEX INVERTER BUFFER MONOLITHIC SILICON《硅单片六位反相缓冲器 氧化物半导体数字微型电路》.pdf
《DLA SMD-5962-79014 REV B-1987 MICROCIRCUIT DIGITAL CMOS HEX INVERTER BUFFER MONOLITHIC SILICON《硅单片六位反相缓冲器 氧化物半导体数字微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-79014 REV B-1987 MICROCIRCUIT DIGITAL CMOS HEX INVERTER BUFFER MONOLITHIC SILICON《硅单片六位反相缓冲器 氧化物半导体数字微型电路》.pdf(9页珍藏版)》请在麦多课文档分享上搜索。
1、b 9999996 OL230b 764 a REVISIONS - LTR B - design as of 3 March 1986. DESCRIPTION I DATE I APPROVED Inserted test data for IoL, and IOH into table I. I 12 ;y1 Convert to military drawing format. I Editorial changes throughout. 1 I 1 5962-E335 W* I DISTRIBUTION STATEMENT A. Approved for public releas
2、e DESC FORM 193 MAY ibution is unlimited. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-9999996 O123070 48b MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 1. SCOPE SIZE CODE IDENT. NO. OWG NO. A 14933 79014 REV 8 PAGE 2 1.1 SCO e T
3、his drawing describes device requirements for class B microcircuits in accordance with 1.2.1 odkTD-883, “Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices“. 1.2 Part number. The complete part number shall be as shown in the following example: 79014 o1 E X I -1 I Dra
4、wing number I I I Device type (1.2.1) I I Case outline Lead finish per (1.2.2) MIL-M-38510 1.2.1 Device type. The device type shall identify the circuit function as follows: Devi c e type Generic number Circuit function o1 4049116 Hex inverter buffer 1.2.2 Case outlines. The case outlines shall be a
5、s designated in appendix C of MIL-M-38510, and as Fol 1 ows : 1.3 1.4 Out1 ine 1 etter E F Case outline 0-2 (16 lead, 1/4“ x 7/8“) dual-in-line package F-5 (16 lead, 1/4“ x 3/8“) flat package Absolute maximum ratfnqs. Supply voltage range - - - - - - - - - - - - - - Storage temperature range- - - -
6、- - - - - - - - Maximum power dissipation, (Pg) 1/ - - - - - - - Lead temperature (soldering 10 seconds)- - - - - Thermal resistance, junction to case (QJc): Cases E and F- - - - - - - - - - - - - - - - - Junction temperature (TJ)- - - - - - - - - - - - -0.5 V dc to +18 Y dc -65C to +150 1 500 IJW d
7、c z/ +300 C See MIL-M-38510, appendix C +175C Input voltage range - - - - - - - - - - - - - - -0.5 V dC to 1( 0 +Om5 V dc Recomnended operating conditions. Supply voltage Vcc - - - - - - - - - - - - - - - Case operating temperature range (TC)- - - - - - +3 V dc to +15 V.dc -55C to +125C t/ - Must wi
8、thstand the added Pg due to short circuit test (e.g., 10s). / For TC = +100C to +125C, derate linearly at 12 mW/C to 200 mW. I I I DESC FORM 193A FEB 86 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-= b 0123031 312 m A MILITARY DRAWING 2. APPLICABL
9、E DOCUMENTS 14933 79014 2.1 Goverment specification and standard. Unless otherwise specified, the following specification and standard, of the issue listed in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawing to t
10、he extent specified herein. REV B DAYTON, OHIO SPECIFICATION PAGE 3 MIL ITARY MI L-M-38510 - Microcircuits, General Specification for. STANDARD MILITARY MIL-STD-883 - Test Methods and Procedures for Microelectronics. (Copies of the specification and standard required by manufacturers in connection w
11、ith specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activity. 1 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the referen-the text of this drawing shall take precedence. 3. REQUIREMENTS 3.1 I
12、tem requirements. The individual item requirements shall be in accordance with 1.2.1 of UL-STD-883, “Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices“ and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical
13、 iimensions shall be as specified in MIL-M-38510 and herein. 3.2.1 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.2 Logic diagram. The logic diagram shall be as specified on figure 1. 3.2.3 Case outlines. The case outlines shall be in accordance with 1.2.2 here
14、in. 3.3 Electrical performance characteristics. Unless otherwise specified, the electrical performance characteristics are as specified in table I and apply over the full recomnended case operating temperature range. 3.4 Markin . Marking shall be in accordance with MIL-STD-883 (see 3.1 herein). The
15、part shall be narked -Tri4 w t t e part number listed in 1.2 herein. In addition, the manufacturers part number may also Se marked as listed in 6.4 herein. 3.5 Certificate of com liance. A certificate of cornpliance shall be required from a manufacturer in order to be listed as an :pproved source of
16、 supply in 6.4. The certificate of compliance submitted to DUC-ECS prior to listing as an approved source of supply shall state that the manufacturers product meets the requirements of MIL-STD-883 (see 3.1 herein) and the requirements herein. 3.6 Certificate of conformance. A certificate of conforma
17、nce as required in MIL-STD-883 see 3.1 herein) shall be provided with each lot of microcircuits delivered to this drawing. 3.7 Notification of change. Notification of change to DESC-ECS shall be required in accordance with MIL-STD-883 ( see 3.1 herein 1. I SIZE I CODE IDENT. NO. I DWG NO. Provided b
18、y IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-TABLE I. Electrical characteristics. I ITc = -55C VDD = 5 V I I. Con di ti ons I Group A I I 1 Synibol I -55C 5 TC 5 +125“C I Subgroups I Limits I Unit I 1 I Min 1 M ax I I I I I I I Test IV High-level input volt
19、age I VIH /VDD = 5 V Yo = 0.5 v I1,2,3 14 I IV Low-level Input voltage 1 VIL IVDD = f5Vv Vo = 4.5 V I 1, 2, 3 I I 1.0 I v 5 Y VIN = 0.5 V I lD * I 4*95 I 0.15 V 114.95 I IVDD 15 V High-level output voltage I VOH Low-level output voltage I VOL = Z5Vv VIN = 0.5 V I 1, 2, 3 I I .O5 I V I 1 0.15 V I I I
20、 .O5 I 1 I I I I I I 15 V 1.5 V I 112.5 I I I I I I 1 I 13.5 V I I I 2.0 I I I l I I I I l I I I I I I I I I I 1 1 I I I I I I I I I 1, 2, 3 I I *l I UA Input current 1 IIN Input capacitance f CIN !VIN = O V TC = +25*C 14 I I 22.5 I pF IVDD = l8 “ I I I Juiescent current I IDD IVDD = 15 V I 1, 2, 3
21、I DEFENSE ELECTRONICS SUPPLY CENTER MILITARY DRAWING lutput low current I IOL IVDD = 5 v (sink) VO = 0.4 V I SIZE CODE IDENT. NO. DWG NO. A 14933 I 79014 I I i I DAYTON, OHIO I IOH IVDD = lutput high current (source) fV0 = 2.5 V I 4 REV B PAGE I i l I Propagation delay time f tpHL TC = +25C VDD = 5
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