欢迎来到麦多课文档分享! | 帮助中心 海量文档,免费浏览,给你所需,享你所想!
麦多课文档分享
全部分类
  • 标准规范>
  • 教学课件>
  • 考试资料>
  • 办公文档>
  • 学术论文>
  • 行业资料>
  • 易语言源码>
  • ImageVerifierCode 换一换
    首页 麦多课文档分享 > 资源分类 > PDF文档下载
    分享到微信 分享到微博 分享到QQ空间

    DLA SMD-5962-79014 REV B-1987 MICROCIRCUIT DIGITAL CMOS HEX INVERTER BUFFER MONOLITHIC SILICON《硅单片六位反相缓冲器 氧化物半导体数字微型电路》.pdf

    • 资源ID:698632       资源大小:287.96KB        全文页数:9页
    • 资源格式: PDF        下载积分:10000积分
    快捷下载 游客一键下载
    账号登录下载
    微信登录下载
    二维码
    微信扫一扫登录
    下载资源需要10000积分(如需开发票,请勿充值!)
    邮箱/手机:
    温馨提示:
    如需开发票,请勿充值!快捷下载时,用户名和密码都是您填写的邮箱或者手机号,方便查询和重复下载(系统自动生成)。
    如需开发票,请勿充值!如填写123,账号就是123,密码也是123。
    支付方式: 支付宝扫码支付    微信扫码支付   
    验证码:   换一换

    加入VIP,交流精品资源
     
    账号:
    密码:
    验证码:   换一换
      忘记密码?
        
    友情提示
    2、PDF文件下载后,可能会被浏览器默认打开,此种情况可以点击浏览器菜单,保存网页到桌面,就可以正常下载了。
    3、本站不支持迅雷下载,请使用电脑自带的IE浏览器,或者360浏览器、谷歌浏览器下载即可。
    4、本站资源下载后的文档和图纸-无水印,预览文档经过压缩,下载后原文更清晰。
    5、试题试卷类文档,如果标题没有明确说明有答案则都视为没有答案,请知晓。

    DLA SMD-5962-79014 REV B-1987 MICROCIRCUIT DIGITAL CMOS HEX INVERTER BUFFER MONOLITHIC SILICON《硅单片六位反相缓冲器 氧化物半导体数字微型电路》.pdf

    1、b 9999996 OL230b 764 a REVISIONS - LTR B - design as of 3 March 1986. DESCRIPTION I DATE I APPROVED Inserted test data for IoL, and IOH into table I. I 12 ;y1 Convert to military drawing format. I Editorial changes throughout. 1 I 1 5962-E335 W* I DISTRIBUTION STATEMENT A. Approved for public releas

    2、e DESC FORM 193 MAY ibution is unlimited. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-9999996 O123070 48b MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 1. SCOPE SIZE CODE IDENT. NO. OWG NO. A 14933 79014 REV 8 PAGE 2 1.1 SCO e T

    3、his drawing describes device requirements for class B microcircuits in accordance with 1.2.1 odkTD-883, “Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices“. 1.2 Part number. The complete part number shall be as shown in the following example: 79014 o1 E X I -1 I Dra

    4、wing number I I I Device type (1.2.1) I I Case outline Lead finish per (1.2.2) MIL-M-38510 1.2.1 Device type. The device type shall identify the circuit function as follows: Devi c e type Generic number Circuit function o1 4049116 Hex inverter buffer 1.2.2 Case outlines. The case outlines shall be a

    5、s designated in appendix C of MIL-M-38510, and as Fol 1 ows : 1.3 1.4 Out1 ine 1 etter E F Case outline 0-2 (16 lead, 1/4“ x 7/8“) dual-in-line package F-5 (16 lead, 1/4“ x 3/8“) flat package Absolute maximum ratfnqs. Supply voltage range - - - - - - - - - - - - - - Storage temperature range- - - -

    6、- - - - - - - - Maximum power dissipation, (Pg) 1/ - - - - - - - Lead temperature (soldering 10 seconds)- - - - - Thermal resistance, junction to case (QJc): Cases E and F- - - - - - - - - - - - - - - - - Junction temperature (TJ)- - - - - - - - - - - - -0.5 V dc to +18 Y dc -65C to +150 1 500 IJW d

    7、c z/ +300 C See MIL-M-38510, appendix C +175C Input voltage range - - - - - - - - - - - - - - -0.5 V dC to 1( 0 +Om5 V dc Recomnended operating conditions. Supply voltage Vcc - - - - - - - - - - - - - - - Case operating temperature range (TC)- - - - - - +3 V dc to +15 V.dc -55C to +125C t/ - Must wi

    8、thstand the added Pg due to short circuit test (e.g., 10s). / For TC = +100C to +125C, derate linearly at 12 mW/C to 200 mW. I I I DESC FORM 193A FEB 86 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-= b 0123031 312 m A MILITARY DRAWING 2. APPLICABL

    9、E DOCUMENTS 14933 79014 2.1 Goverment specification and standard. Unless otherwise specified, the following specification and standard, of the issue listed in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawing to t

    10、he extent specified herein. REV B DAYTON, OHIO SPECIFICATION PAGE 3 MIL ITARY MI L-M-38510 - Microcircuits, General Specification for. STANDARD MILITARY MIL-STD-883 - Test Methods and Procedures for Microelectronics. (Copies of the specification and standard required by manufacturers in connection w

    11、ith specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activity. 1 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the referen-the text of this drawing shall take precedence. 3. REQUIREMENTS 3.1 I

    12、tem requirements. The individual item requirements shall be in accordance with 1.2.1 of UL-STD-883, “Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices“ and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical

    13、 iimensions shall be as specified in MIL-M-38510 and herein. 3.2.1 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.2 Logic diagram. The logic diagram shall be as specified on figure 1. 3.2.3 Case outlines. The case outlines shall be in accordance with 1.2.2 here

    14、in. 3.3 Electrical performance characteristics. Unless otherwise specified, the electrical performance characteristics are as specified in table I and apply over the full recomnended case operating temperature range. 3.4 Markin . Marking shall be in accordance with MIL-STD-883 (see 3.1 herein). The

    15、part shall be narked -Tri4 w t t e part number listed in 1.2 herein. In addition, the manufacturers part number may also Se marked as listed in 6.4 herein. 3.5 Certificate of com liance. A certificate of cornpliance shall be required from a manufacturer in order to be listed as an :pproved source of

    16、 supply in 6.4. The certificate of compliance submitted to DUC-ECS prior to listing as an approved source of supply shall state that the manufacturers product meets the requirements of MIL-STD-883 (see 3.1 herein) and the requirements herein. 3.6 Certificate of conformance. A certificate of conforma

    17、nce as required in MIL-STD-883 see 3.1 herein) shall be provided with each lot of microcircuits delivered to this drawing. 3.7 Notification of change. Notification of change to DESC-ECS shall be required in accordance with MIL-STD-883 ( see 3.1 herein 1. I SIZE I CODE IDENT. NO. I DWG NO. Provided b

    18、y IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-TABLE I. Electrical characteristics. I ITc = -55C VDD = 5 V I I. Con di ti ons I Group A I I 1 Synibol I -55C 5 TC 5 +125“C I Subgroups I Limits I Unit I 1 I Min 1 M ax I I I I I I I Test IV High-level input volt

    19、age I VIH /VDD = 5 V Yo = 0.5 v I1,2,3 14 I IV Low-level Input voltage 1 VIL IVDD = f5Vv Vo = 4.5 V I 1, 2, 3 I I 1.0 I v 5 Y VIN = 0.5 V I lD * I 4*95 I 0.15 V 114.95 I IVDD 15 V High-level output voltage I VOH Low-level output voltage I VOL = Z5Vv VIN = 0.5 V I 1, 2, 3 I I .O5 I V I 1 0.15 V I I I

    20、 .O5 I 1 I I I I I I 15 V 1.5 V I 112.5 I I I I I I 1 I 13.5 V I I I 2.0 I I I l I I I I l I I I I I I I I I I 1 1 I I I I I I I I I 1, 2, 3 I I *l I UA Input current 1 IIN Input capacitance f CIN !VIN = O V TC = +25*C 14 I I 22.5 I pF IVDD = l8 “ I I I Juiescent current I IDD IVDD = 15 V I 1, 2, 3

    21、I DEFENSE ELECTRONICS SUPPLY CENTER MILITARY DRAWING lutput low current I IOL IVDD = 5 v (sink) VO = 0.4 V I SIZE CODE IDENT. NO. DWG NO. A 14933 I 79014 I I i I DAYTON, OHIO I IOH IVDD = lutput high current (source) fV0 = 2.5 V I 4 REV B PAGE I i l I Propagation delay time f tpHL TC = +25C VDD = 5

    22、V high-to-1 ow 1 eve1 I I I I I I IRL = 200 ka I I 1, 2, 3 I 3.75 I I I I I I li1 Il0 I 1 I I I I I I I I I 1, 2, 3 I 1.85 I ImA l I I I I I I I I I I I I I I ns I I I I I I I I I I I I I I I I I 1 I 1 17; I O9 I I 9 13 Provided by IHSNot for ResaleNo reproduction or networking permitted without lic

    23、ense from IHS-,-,-m b 0123073 195 m I I I 1 TABLE I. Electrical characteristics - Continued. SIZE MILITARY DRAWING Test CODE IDENT. NO. DWG NO. 3ropagation delay time 1 ow-to-high level A 14933 Conditions 1 Group A I I Limits I Unit 1 9 1 6 1120 i ns I I Subgroups I Min i m ax I I I I I I I I I I I

    24、I I I I I I I I I I I 1 I I I I I 10, 11 I 9 I180 I ns I I I I Symbol 1 -55C 5 TC +125“c I I I *lo% IRL = 200 kn I ITc = -55C 1 +125*C tpLH ITc = +25“C VDD = 5 V ICL = 50 pF I VDD = 5 v 79014 I ICL = Zr,pF I IRL = 200 kn I I I i I I I I I I I I I I ! I I I I 4- Provided by IHSNot for ResaleNo reprod

    25、uction or networking permitted without license from IHS-,-,-h 0323074 O21 W A 14933 1 NC 6Y 6A NC 5 . 5A 4y QA 16 15 14 13 12 Il IO 9 L 79014 FIGURE 1. Logic diagrams and terminal connections(top view). MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO DESC FORM 93A FEB 86 6 REV PAGE P

    26、rovided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,- b 0123075 Tb8 MILITARY DRAW1 N G DEFENSE ELECTRONICS SUPPLY CENTER DAYTON. OHIO i A 14933 79014 REV B PAGE 7 3.8 Verification and review. DESC, DESCs agent, and the acquiring activity retain the option

    27、to beview the manufacturers facfl ity and applicable required docmentation. ie made available onshore at the option of the reviewer. Offshore documentation shall 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and ins ection. Sampling and inspection procedures shall be in accordance with section i of M

    28、IL-M-38510 t o theextent specified in MIL-STO-883 (see 3.1 herein). 4.2 Screenin . Screening shall be in accordance with method 5004 of MIL-STO-863, and shall be :onductd devices prior to quality conformance inspection. The following additional criteria ;hall apply: a. Burn-in test (method 1015 of M

    29、IL-STD-683). Test condition A, 6, C, or D using the circuit submitted with the certificate of compliance (see 3.5 herein). (i) (2) TA = +125C, minimum. Interim and final electrical test parameters shall be as specified in table II herein, except interim electrical parameter tests prior to burn-in ar

    30、e optional at the discretion of the manufacturer. b. 4.3 Quality conformance ins ection. Quality conformance inspection shall be in accordance with nethod 305 of MIL -SID-BBJ Incyuding groups A, 8, C, and D inspections, The following additional criteria shall apply. 4.3.1 Group A inspection. a. Test

    31、s shall be as specified in table II herein. b. c. Subgroups 5, 6, 7, and 8 in table I, method 5005 of MIL-STD-883 shall be omitted. Subgroup 4 (CIN measurement) shall be measured only for the initial test and after process or design changes which may affect input capacitance. 4.3.2 Groups C and D in

    32、spections. a. End-point electrical parameters shall be as specified in table II herein. b. Steady-state life test (method 1005 of MIL-STD-883) conditions: (1) (2) TA = +125*C, minimum. (3) Test duration: Test condition A, B, C, or D using the circuit submitted with the certificate of compliance (see

    33、 3.5 herein). 1,000 hours, except as permitted by appendix B of MIL-M-38510 and method 1005 of MIL-STO-883. I SIZE I CODE IDENT NO. I DWG NO I I I OESC FORM 193A FFR 86 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-TABLE I I. Electrical test requir

    34、ements. MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO I 1 Subgroups I I MIL-STD-883 test requirements I (per method I I I 5005, table I)I nnterim electrical parameters I 1 I 1 (method 5004) I Ihinal electrical test parameters I I I (method 5004) I 1*, 2, 3, 9 I ixroup A test requir

    35、ements I I I (method 5005) I 1, 2, 3, 4, 9 I Rroups C and D end-point I I I electrical parameters I 1, 2, 3 I i (method 51105) I I Additional electrical subgroups I 7 I for group C periodic I 10, 11 I I inspection I I - A 14933 79014 B PAGE 8 REV *PDA applies to subgroup 1. 5. PACKAGING 5.1 Packagin

    36、g requirements. The requirements for packaging shall be in accordance with MIL-M-38510. 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended for use when military ,pecifications do not exist and quallfied military devices that will perform the required function are iot av

    37、ailable for OEM application. :his drawing has been qualified for llsting on QPL-38510, the device specified herein will be nactivated and will not be used for new design. The QPL-38510 product shall be the preferred item for i11 applications. When a military specification exists and the product cove

    38、red by 6.2 Replaceability-. Replaceability is determined as follows: a. Microcircuits covered by this drawing will replace the same generic device covered by a b, When a QPL source is established, the part numbered device specified in this drawing Will be contractor-prepared specification or drawing

    39、. replaced by the microcircuit identified as part number M38510/055538-. 6.3 Comnents. Comments on this drawing should be directed to DESC-ECS, Oayton, Ohio 45444, or telephone 513-236-3375. I SIZE I CODEIDENT NO 1 DWGNO Provided by IHSNot for ResaleNo reproduction or networking permitted without li

    40、cense from IHS-,-,-9999996 0323077 830 1 MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER 6.4 Approved source of supply. An approved source of supply is listed herein. Additional sources dl1 be added as they become available. The vendor listed herein has agreed to this drawing and a certificate of

    41、 Compliance (see 3.5 herein) has been submitted to DESC-ECS. SIZE CODE IDENT. NO. OWC NO. A 14933 79014 I I I I Vendor I Vendor I Rep1 acement I I Military drawing I CAGE I similar part Imilitary specification1 I number I number L/ I part number I I part number I I I I 1 I I I I I I 7901401EX 2/ I 3

    42、1019 1 883C4049UBC I M38510/05553BEX 1 I I I I 1 I I I I I SCL4049UBF I M38510/05553BFX I I I I I I - I 7901401FX ?/ I DAYTON, OHIO I 1 REV B PAGE 9 - 11 Caution. Do not use this number for item acquisition. Items acquired - 2/ Inactive for new design. Use M38510/05553BCX. 31 Inactive for new design

    43、. Not available from an approved source of supply. number may not satisfy the performance requirements of this drawing. - Vendor CAGE number 3 101 9 Vendor name and address Sprague Solid State 3900 Welsh Rd. Willow Grove, PA 19090 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-


    注意事项

    本文(DLA SMD-5962-79014 REV B-1987 MICROCIRCUIT DIGITAL CMOS HEX INVERTER BUFFER MONOLITHIC SILICON《硅单片六位反相缓冲器 氧化物半导体数字微型电路》.pdf)为本站会员(dealItalian200)主动上传,麦多课文档分享仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文档分享(点击联系客服),我们立即给予删除!




    关于我们 - 网站声明 - 网站地图 - 资源地图 - 友情链接 - 网站客服 - 联系我们

    copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
    备案/许可证编号:苏ICP备17064731号-1 

    收起
    展开