DLA SMD-5962-13221-2013 MICROCIRCUIT HYBRID LINEAR +5 VOLT AND ±7 V TRIPLE CHANNEL DC DC CONVERTER.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED REV SHEET REV SHEET 15 16 17 REV STATUS REV OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Greg Cecil DLA LAND AND MARITIME STANDARD MICROCIRCUIT DRAWING CHECKED BY Greg Cecil COLUMBUS, OHIO 43218-3990 http:/www.landandmariti

2、me.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Charles F. Saffle MICROCIRCUIT, HYBRID, LINEAR +5 VOLT AND 7 V, TRIPLE CHANNEL, DC/DC CONVERTER AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 13-12-18 AMSC N/A REVISION LEVEL SIZE A CAGE CODE 67268 5962-132

3、21 SHEET 1 OF 17 DSCC FORM 2233 APR 97 5962-E561-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-13221 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE

4、1.1 Scope. This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels

5、 are reflected in the PIN. 1.2 PIN. The PIN shall be as shown in the following example: 5962 R 13221 01 H X A Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.

6、1 Radiation hardness assurance (RHA) designator. RHA marked devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Dev

7、ice type Generic number Circuit function 01 SMRT28507T DC/DC converter, 29 W, +5 V output and 7 V outputs 1.2.3 Device class designator. This device class designator shall be a single letter identifying the product assurance level. All levels are defined by the requirements of MIL-PRF-38534 and requ

8、ire QML Certification as well as qualification (Class H, K, and E) or QML Listing (Class G and D). The product assurance levels are as follows: Device class Device performance documentation K Highest reliability class available. This level is intended for use in space applications. H Standard milita

9、ry quality class level. This level is intended for use in applications where non-space high reliability devices are required. G Reduced testing version of the standard military quality class. This level uses the Class H screening and In-Process Inspections with a possible limited temperature range,

10、manufacturer specified incoming flow, and the manufacturer guarantees (but may not test) periodic and conformance inspections (Group A, B, C, and D). E Designates devices which are based upon one of the other classes (K, H, or G) with exception(s) taken to the requirements of that class. These excep

11、tion(s) must be specified in the device acquisition document; therefore the acquisition document should be reviewed to ensure that the exception(s) taken will not adversely affect system performance. D Manufacturer specified quality class. Quality level is defined by the manufacturers internal, QML

12、certified flow. This product may have a limited temperature range. 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 12 Flanged Package 1.2.5 Lead finish. The lead finish shall be

13、as specified in MIL-PRF-38534. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-13221 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings.

14、1/ Supply voltage (VCC) . -0.5 V dc to +80 V dc Power dissipation (PD) Device type 01 (RHA levels P and R) . 30 W Output power 29 W Lead temperature (soldering, 10 seconds) . +300C Storage temperature . -65C to +150C 1.4 Recommended operating conditions. Supply voltage (VCC) . +19 V dc to +56 V dc C

15、ase operating temperature range (TC) -55C to +125C 1.5 Radiation features. 2/ 3/ Maximum total dose available (dose rate = 50 - 300 rads(Si)/s) . 100 krads(Si) 4/ Maximum total dose available (dose rate 10 mrads(Si)/s) . 100 krads(Si) 4/ Single event phenomenon (SEP) effective linear energy transfer

16、 (LET): No SEL, SEB, SEFI, SEGR . 90 nm 2/ Tested Level P 30 krads(Si) QML die 3/ No Tested (78.2 MeV-cm2/mg) Not Tested 1/ Tested Level R 100 krads(Si) Tested Non QML die 4/ Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWI

17、NG SIZE A 5962-13221 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 16 DSCC FORM 2234 APR 97 4.3.5.1 Radiation Hardness Assurance (RHA) inspection. RHA qualification is required for those devices with the RHA designator as specified herein. End-point electrical parameters for r

18、adiation hardness assurance (RHA) devices shall be specified in table II. Radiation testing will be in accordance with the qualifying activity (DLA Land and Maritime-VQ) approved plan and with MIL-PRF-38534, Appendix G. a. The hybrid device manufacturer shall establish procedures controlling element

19、 radiation testing, and shall establish radiation test plans used to implement element lot qualification during procurement. Test plans and test reports shall be filed and controlled in accordance with the manufacturers configuration management system. b. The hybrid device manufacturer shall designa

20、te a RHA program manager to oversee element lot qualification, and to monitor design changes for continued compliance to RHA requirements. 4.3.5.1.1 Hybrid level radiation qualification. 4.3.5.1.1.1 Qualification by similarity. A family is defined by the family model designator e.g. SMRT. All parts

21、with this designator share a common design and use the same active elements. Device type 5962F0821201KXC was tested. 4.3.5.1.1.2 Total ionizing dose irradiation testing. A representative device is characterized and tested initially and after any design or process change that may affect the RHA respo

22、nse of this device. Devices are tested at HDR in accordance with condition A and LDR in accordance with condition D of method 1019 of MIL-STD-883. HDR samples are tested to a minimum of 1.5 times the rated dose to ensure rated dose. LDR samples are tested to a minimum of 30 krads(Si) 4.3.5.1.1.3 Sin

23、gle event phenomena (SEP). A minimum of one representative hybrid of the hybrid family is characterized for SEE response at initial qualification and after any design or process change which may affect the RHA response of the device type. Testing shall be performed in accordance with ASTM F1192. Tes

24、t conditions for SEP are as follows: a. The ion beam angle of incidence shall be normal to the die surface. No shadowing of the ion beam due to fixturing is allowed. b. The fluence shall be 1x106 particles/cm2. c. The flux shall be between 102and 105ions/cm2/s. d. The particle range shall be 35 micr

25、on in silicon. e. The characterization is performed at nominal input voltage between 21 and 35 volts with loads varied from 30 percent to 50 percent. The test temperature shall be +25C 10 C in air. f. For SEP test limits, see table IB herein. 4.3.5.1.2 Element level radiation qualification. 4.3.5.1.

26、2.1 Technologies not being tested. Testing is not performed on device technologies including: P/N, Schottky and zener diodes, and on small signal bipolar junction transistors that the manufacturer considers to be radiation hardened. Bipolar Junction Transistors (BJT) may not be tested for TID if the

27、 design margin for critical parameters are 2X minimum as determined by design analysis. 4.3.5.1.2.2 Total Ionizing Dose Irradiation. Every initial wafer lot of bipolar / BiCMOS linear or mixed signal semiconductor components will be characterized and tested at HDR in accordance with condition A of m

28、ethod 1019 of MIL-STD-883 to the specified total dose. Eleven samples will be tested under the bias condition which produces the greatest parametric shift. P99/90% statistics are applied to the element parameters as compared against limits in the component SCD which are established by the worst case

29、 circuit analysis. Low dose rate testing per Condition D has been performed at the hybrid level. Component changes may be qualified at hybrid level or the die will be characterized at the element level with condition D of method 1019 of MIL-STD-883. When element level low dose rate testing is perfor

30、med ten samples (5 biased and 5 unbiased) will be tested to the specified total dose. P99/90% statistics are applied to the element parameters as compared against limits established by the worst case circuit analysis. Provided by IHSNot for ResaleNo reproduction or networking permitted without licen

31、se from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-13221 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 17 DSCC FORM 2234 APR 97 4.3.5.2 Radiation Lot Acceptance. Each lot of active elements, except as stated in 4.3.5.1.2.1 shall be evaluated for acceptance in accordance

32、 with MIL-PRF-38534 and herein. 4.3.5.2.1 Total Ionizing Dose. All active elements (except as noted in 4.3.5.1.2.1) are either purchased at the radiation level of the hybrid (i.e., P or R) as MIL-PRF-38535 Standard Microcircuit Drawing (SMD) or MIL-PRF-19500 JAN where the electrical performance meet

33、s those established for the elements at hybrid device design, or subject to lot acceptance testing (LAT). LAT consists of HDR testing on every wafer lot in accordance with condition A of method 1019 of MIL-STD-883 to 45 krads(Si) for level P hybrid devices, and 150 krads(Si) for levels R hybrid devi

34、ces. A minimum of 10 samples will be tested (5 biased and 5 unbiased unless the worst case test condition has been determined reducing the sample to 5. P99/90% statistics are applied to the element parameter as compared against limits established in the component SCD which are established by worst c

35、ase circuit analysis for lot acceptance. 5. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38534. 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equi

36、pment), design applications, and logistics purposes. 6.2 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor-prepared specification or drawing. 6.3 Configuration control of SMDs. All proposed changes to existing SMDs will be coordinated

37、as specified in MIL-PRF-38534. 6.4 Record of users. Military and industrial users shall inform DLA Land and Maritime when a system application requires configuration control and the applicable SMD. DLA Land and Maritime will maintain a record of users and this list will be used for coordination and

38、distribution of changes to the drawings. Users of drawings covering microelectronic devices (FSC 5962) should contact DLA Land and Maritime-VA, telephone (614) 692-8108. 6.5 Comments. Comments on this drawing should be directed to DLA Land and Maritime-VA, Post Office Box 3990, Columbus, Ohio 43218-

39、3990, or telephone (614) 692-1081. 6.6 Sources of supply. Sources of supply are listed in MIL-HDBK-103 and QML-38534. The vendors listed in MIL-HDBK-103 and QML-38534 have submitted a certificate of compliance (see 3.7 herein) to DLA Land and Maritime-VA and have agreed to this drawing. 6.7 Addition

40、al information. When applicable, a copy of the following additional data shall be maintained and available from the device manufacturer: a. RHA upset levels. b. Test conditions (SEP). c. Occurrence of latchup (SEP). d Occurrence of Burn-out (SEP). e. Occurrence of Gate Rupture (SEP). f. Occurrence o

41、f Single Event Functional Interrupt (SEP). g Occurrence of Single Event Upset (SEP). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING BULLETIN DATE: 13-12-18 Approved sources of supply for SMD 5962-13221 are listed below

42、for immediate acquisition information only and shall be added to MIL-HDBK-103 and QML-38534 during the next revisions. MIL-HDBK-103 and QML-38534 will be revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of compliance has b

43、een submitted to and accepted by DLA Land and Maritime-VA. This information bulletin is superseded by the next dated revisions of MIL-HDBK-103 and QML-38534. DLA Land and Maritime maintains an online database of all current sources of supply at http:/www.landandmaritime.dla.mil/Programs/Smcr/. Stand

44、ard microcircuit drawing PIN 1/ Vendor CAGE number Vendor similar PIN 2/ 5962P1322101HXA 5962P1322101HXC 50821 50821 SMRT28507T/HP SMRT28507T/HP 5962R1322101HXA 5962R1322101HXC 50821 50821 SMRT28507T/HR SMRT28507T/HR 5962P1322101KXA 5962P1322101KXC 50821 50821 SMRT28507T/KP SMRT28507T/KP 5962R132210

45、1KXA 5962R1322101KXC 50821 50821 SMRT28507T/KR SMRT28507T/KR 1/ The lead finish shown for each PIN representing a hermetic package is the most readily available from the manufacturer listed for that part. If the desired lead finish is not listed contact the Vendor to determine its availability. 2/ C

46、aution. Do not use this number for item acquisition. Items acquired to this number may not satisfy the performance requirements of this drawing. Vendor CAGE Vendor name number and address 50821 Crane Electronics, Inc. 10301 Willows Road Redmond, WA 98052 The information contained herein is disseminated for convenience only and the Government assumes no liability whatsoever for any inaccuracies in the information bulletin. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-