DLA SMD-5962-13202 REV A-2013 MICROCIRCUIT LINEAR VOLTAGE REGULATOR MONOLITHIC SILICON.pdf
《DLA SMD-5962-13202 REV A-2013 MICROCIRCUIT LINEAR VOLTAGE REGULATOR MONOLITHIC SILICON.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-13202 REV A-2013 MICROCIRCUIT LINEAR VOLTAGE REGULATOR MONOLITHIC SILICON.pdf(16页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add radiation hardness requirements to device type 01. rrp 13-12-16 C. SAFFLE REV SHEET REV A SHEET 15 REV STATUS REV A A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RAJESH PITHADIA DLA LAND AND M
2、ARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY CHARLES F. SAFFLE MICROCIRCUIT, LINEAR, VOLTAGE REGULATOR, MONOLITHI
3、C SILICON DRAWING APPROVAL DATE 13-10-09 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-13202 SHEET 1 OF 15 DSCC FORM 2233 APR 97 5962-E085-14 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-13202 DLA
4、LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes
5、 are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 13202 01 V X C Federal stock class designator RHA designator (see 1.2
6、.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (
7、-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 TPS7H1101 Low dropout , adjustable, voltage regulator 1.2.3 Device class designator. The device class designator is a single letter identif
8、ying the product assurance level as follows: Device class Device requirements documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package sty
9、le X See figure 1 16 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-13202 DLA LAND AND MARITIME COLUM
10、BUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Input voltage range: VIN, PG pins . -0.3 V to +7.5 V FB, COMP, PCL, CS, EN pins . -0.3 V to VIN+ 0.3 V Output voltage range (VOUT, SS) . -0.3 V to VINPeak output current Internally limited Pin PG sin
11、k current . 5 mA Storage temperature range -65C to +150C Lead temperature (soldering, 10 seconds) +300C Junction temperature (TJ) +150C Thermal resistance, junction-to-case (bottom) (JCbot) . 0.6C/W Thermal resistance, junction-to-ambient (JA) 86.6C/W 1.4 Recommended operating conditions. Input volt
12、age (VIN) . 1.5 V to 7 V Junction temperature range (TJ) -55C to +125C Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads(Si)/s) . 100 krads(Si) 2/ The manufacturer supplying RHA device on this drawing has performed
13、characterization test to demonstrate that the parts do not exhibit enhanced low dose rate sensitivity (ELDRS) in accordance with MIL-STD-883, method 1019, paragraph 3.13.1.1. Therefore these parts may be considered ELDRS free at a dose level of 100 krads (Si). 2. APPLICABLE DOCUMENTS 2.1 Government
14、specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MI
15、L-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microci
16、rcuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 1/ Stresses above the absolute maximum rating
17、 may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ The manufacturer supplying device type 01 has performed characterization testing in accordance with MIL-STD-883 method 1019 paragraph 3.13.1.1 and the parts exhibite
18、d no enhanced low dose rate sensitivity (ELDRS) at a dose level of 100 krads (Si). The radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A and condition D to a maximum total dose of 100K rads(Si). Provided b
19、y IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-13202 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 2.2 Order of precedence. In the event of a conflict between the text
20、of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device
21、classes Q and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.2 Design, construction, and physical dimensions.
22、The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified
23、 on figure 2. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiatio
24、n parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements sha
- 1.请仔细阅读文档,确保文档完整性,对于不预览、不比对内容而直接下载带来的问题本站不予受理。
- 2.下载的文档,不会出现我们的网址水印。
- 3、该文档所得收入(下载+内容+预览)归上传者、原创作者;如果您是本文档原作者,请点此认领!既往收益都归您。
下载文档到电脑,查找使用更方便
10000 积分 0人已下载
下载 | 加入VIP,交流精品资源 |
- 配套讲稿:
如PPT文件的首页显示word图标,表示该PPT已包含配套word讲稿。双击word图标可打开word文档。
- 特殊限制:
部分文档作品中含有的国旗、国徽等图片,仅作为作品整体效果示例展示,禁止商用。设计者仅对作品中独创性部分享有著作权。
- 关 键 词:
- DLASMD596213202REVA2013MICROCIRCUITLINEARVOLTAGEREGULATORMONOLITHICSILICONPDF

链接地址:http://www.mydoc123.com/p-698523.html