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    DLA SMD-5962-13202 REV A-2013 MICROCIRCUIT LINEAR VOLTAGE REGULATOR MONOLITHIC SILICON.pdf

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    DLA SMD-5962-13202 REV A-2013 MICROCIRCUIT LINEAR VOLTAGE REGULATOR MONOLITHIC SILICON.pdf

    1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add radiation hardness requirements to device type 01. rrp 13-12-16 C. SAFFLE REV SHEET REV A SHEET 15 REV STATUS REV A A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RAJESH PITHADIA DLA LAND AND M

    2、ARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY CHARLES F. SAFFLE MICROCIRCUIT, LINEAR, VOLTAGE REGULATOR, MONOLITHI

    3、C SILICON DRAWING APPROVAL DATE 13-10-09 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-13202 SHEET 1 OF 15 DSCC FORM 2233 APR 97 5962-E085-14 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-13202 DLA

    4、LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes

    5、 are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 13202 01 V X C Federal stock class designator RHA designator (see 1.2

    6、.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (

    7、-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 TPS7H1101 Low dropout , adjustable, voltage regulator 1.2.3 Device class designator. The device class designator is a single letter identif

    8、ying the product assurance level as follows: Device class Device requirements documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package sty

    9、le X See figure 1 16 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-13202 DLA LAND AND MARITIME COLUM

    10、BUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Input voltage range: VIN, PG pins . -0.3 V to +7.5 V FB, COMP, PCL, CS, EN pins . -0.3 V to VIN+ 0.3 V Output voltage range (VOUT, SS) . -0.3 V to VINPeak output current Internally limited Pin PG sin

    11、k current . 5 mA Storage temperature range -65C to +150C Lead temperature (soldering, 10 seconds) +300C Junction temperature (TJ) +150C Thermal resistance, junction-to-case (bottom) (JCbot) . 0.6C/W Thermal resistance, junction-to-ambient (JA) 86.6C/W 1.4 Recommended operating conditions. Input volt

    12、age (VIN) . 1.5 V to 7 V Junction temperature range (TJ) -55C to +125C Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads(Si)/s) . 100 krads(Si) 2/ The manufacturer supplying RHA device on this drawing has performed

    13、characterization test to demonstrate that the parts do not exhibit enhanced low dose rate sensitivity (ELDRS) in accordance with MIL-STD-883, method 1019, paragraph 3.13.1.1. Therefore these parts may be considered ELDRS free at a dose level of 100 krads (Si). 2. APPLICABLE DOCUMENTS 2.1 Government

    14、specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MI

    15、L-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microci

    16、rcuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 1/ Stresses above the absolute maximum rating

    17、 may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ The manufacturer supplying device type 01 has performed characterization testing in accordance with MIL-STD-883 method 1019 paragraph 3.13.1.1 and the parts exhibite

    18、d no enhanced low dose rate sensitivity (ELDRS) at a dose level of 100 krads (Si). The radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A and condition D to a maximum total dose of 100K rads(Si). Provided b

    19、y IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-13202 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 2.2 Order of precedence. In the event of a conflict between the text

    20、of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device

    21、classes Q and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.2 Design, construction, and physical dimensions.

    22、The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified

    23、 on figure 2. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiatio

    24、n parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements sha

    25、ll be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not fe

    26、asible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. 3.5.1 Certification/compliance mark. T

    27、he certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing

    28、(see 6.6.1 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein. 3.7 Certificate of co

    29、nformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING

    30、SIZE A 5962-13202 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TA +125C Group A subgroups Device type Limits Unit unless otherwise specified Min Max Input voltage rang

    31、e VIN1, 2, 3 01 1.5 7 V Feedback pin voltage VFB1.5 V VIN 7 V 1, 2, 3 01 0.594 0.616 V Output voltage range VOUT1, 2, 3 01 0.8 VIN 0.35 V Output voltage accuracy 0 A IOUT 3 A, 1.5 V VIN 7 V, 0.8 VTHPG, VPG= 7 V 1, 2, 3 01 2.5 A SS pin current ISSVSS= 1.5 V to 7 V 1, 2, 3 01 3.5 A 1/ 1.5 V VIN 7 V, V

    32、OUT(target)= VIN 0.35 V, IOUT= 10 mA, VEN= 1.1 V, COUT= 22 F, PG pin pulled up to VINwith 50 k. 2/ Devices supplied to this drawing have been characterized through all levels M, D, P, L, and R of irradiation. However, this device is only tested at the “R” level. Pre and Post irradiation values are i

    33、dentical unless otherwise specified in Table I. When performing post irradiation electrical measurements for any RHA level, TA= +25C (see 1.5 herein). The manufacturer supplying device type 01 has performed characterization testing in accordance with MIL-STD-883 method 1019 paragraph 3.13.1.1 and th

    34、e parts exhibited no enhanced low dose rate sensitivity (ELDRS) at a dose level of 100 krads (Si). The radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A and condition D to a maximum total dose of 100K rads

    35、(Si). 3/ Based on using 0.1% resistors. 4/ The output voltage accuracy of condition at IOUT= 2 A and IOUT= 3 A is specified by characterization , but not production tested. 5/ Line and load regulations done under pulse condition for T 10 ms. 6/ The parameter is guaranteed to the limit specified by c

    36、haracterization, but not production tested. 7/ The maximum limit of the ICLparameter is guaranteed to the limit specified by characterization, but not production tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SI

    37、ZE A 5962-13202 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 9 DSCC FORM 2234 APR 97 FIGURE 1. Case outline. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-13202 DLA LAND AND MARITI

    38、ME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 10 DSCC FORM 2234 APR 97 Symbol Millimeters Inches Min Max Min Max A 1.833 2.333 0.072 0.092 B 0.382 0.482 0.015 0.019 c 0.097 0.177 0.004 0.007 D 10.760 11.260 0.424 0.443 D1 8.550 9.050 0.337 0.356 E 24.642 25.142 0.970 0.990 E1 9.380 9.880 0.369

    39、 0.389 E2 6.340 6.840 0.250 0.269 e 1.190 1.350 0.047 0.053 Q 0.690 1.190 0.027 0.047 S1 0.844 REF 0.033 REF NOTES: 1. Controlling dimensions are millimeter, inch dimensions are given for reference only. 2. This package is hermetically sealed with a metal lid. Lid and heat sink are connected to pin

    40、8 (GND). 3. The leads are gold plated. FIGURE 1. Case outline continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-13202 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 11 DSCC FO

    41、RM 2234 APR 97 Device type 01 Case outline X Terminal number Terminal symbol 1 SS 2 EN 3 VIN4 VIN5 VIN6 VIN7 PCL 8 GND 9 PG/OC 10 CS 11 VOUT12 VOUT13 VOUT14 VOUT15 COMP 16 FB FIGURE 2. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS

    42、-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-13202 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 12 DSCC FORM 2234 APR 97 Terminal symbol Description VINUnregulated supply voltage. It is recommended to connect an input capacitor as a good analog circuit practice. VOUTRegul

    43、ated output. FB The output voltage feedback input through voltage dividers. GND Ground/Thermal pad. Thermal pad must be connected to GND. EN Enable pin. Driving this pin to logic high enables the device. Driving the pin to logic low disables the device. CS Current sense pin. Resistor connected from

    44、CS to VIN. CS pin indicates voltage proportional to output current. CS pin low: Foldback current limit disabled CS pin high: Foldback current limit enabled SS SoftStart pin. Connecting an external capacitor slows down the output voltage ramp rate after enable event. PG/OC PowerGood pin. PG is open d

    45、rain output to indicate the output voltage reaches to 90% of target. PG pin is also used as indicator when over current condition is activated. PCL Programmable current limit. A resistor to GND sets the current limit activation point. The range of resistor that can be used on the PCL pin to GND is 8

    46、.2 k to 160 k. COMP Output of error amplifier. FIGURE 2. Terminal connections continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-13202 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A

    47、SHEET 13 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affe

    48、ct the form, fit, or function as described herein. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection 4.2.1 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufac


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