DLA MIL-PRF-19500 744 D-2013 SEMICONDUCTOR DEVICE FIELD EFFECT TRANSISTOR N-CHANNEL RADIATION HARDENED LOGIC-LEVEL SILICON TYPES 2N7616UB 2N7616UBC 2N7616UBN 2N7616UBCN JANTXVR JAN.pdf

《DLA MIL-PRF-19500 744 D-2013 SEMICONDUCTOR DEVICE FIELD EFFECT TRANSISTOR N-CHANNEL RADIATION HARDENED LOGIC-LEVEL SILICON TYPES 2N7616UB 2N7616UBC 2N7616UBN 2N7616UBCN JANTXVR JAN.pdf》由会员分享，可在线阅读，更多相关《DLA MIL-PRF-19500 744 D-2013 SEMICONDUCTOR DEVICE FIELD EFFECT TRANSISTOR N-CHANNEL RADIATION HARDENED LOGIC-LEVEL SILICON TYPES 2N7616UB 2N7616UBC 2N7616UBN 2N7616UBCN JANTXVR JAN.pdf（21页珍藏版）》请在麦多课文档分享上搜索。

1、 MIL-PRF-19500/744D 4 January 2013 SUPERSEDING MIL-PRF-19500/744C 1 May 2012 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, * RADIATION HARDENED, LOGIC-LEVEL SILICON, TYPES 2N7616UB, 2N7616UBC, 2N7616UBN, 2N7616UBCN, JANTXVR, JANTXVF, JANSR, AND JANSF This

2、specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for a

3、N-channel, enhancement-mode, radiation hardened, low-threshold logic level, MOSFET, transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC

4、 die versions. 1.2 Physical dimensions. See figure 1, UB (metal lid, as shield, connected to fourth pad), UBC (ceramic lid, braze-ring connected to fourth pad), UBN (3-pin, isolated metal lid), and UBCN (3-pin, isolated ceramic lid). 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Type PT

5、TA= +25C (1) PT(infinite sink) TIS= +25C RJA(2) VDSVGSID1 TC= +25C (3) (4) ID2 TC= +100C (3) (4) ISIDM (5) TJand TSTG2N7616UB, UBC, UBN, UBCN W 0.62 W 1.25 C/W 200 V dc 60 V dc 10 A dc 0.8 A dc 0.5 A dc 0.8 A (pk) 3.2 C -55 to +150 (1) Derate linearly by 4.5 mW/C for TA +25C (2) See figure 2, therma

6、l impedance curves. (3) The following formula derives the maximum theoretical IDlimit: (4) See figure 3, maximum drain current graph. (5) IDM= 4 X ID1as calculated in note (3). AMSC N/A FSC 5961 INCH-POUND ( ) ( ) Tat )on (Rx RT- T= IJMDSJCCJMD* Comments, suggestions, or questions on this document s

7、hould be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. The do

8、cumentation and process conversion measures necessary to comply with this revision shall be completed by 4 July 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/744D 2 1.4 Maximum ratings. Unless otherwise specified, TC= +25C. Type

9、 Min V(BR) DSSVGS (th)1Max IDSS1Max rDS(on)(1) VGS= 4.5 V dc EASIASVGS= 0 V ID= 250 A dc VDS= VGS ID= 250 A dc VGS= 0 V VDS = 80% rated VDS at ID2 TJ= +25C TJ= +150C 2N7616UB UBC, UBN, UBCN V dc 60 V dc Min Max 1.0 2.0 A dc 1.0 Ohm 0.680 Ohm 1.020 mJ 26.6 A dc 1.0 (1) Pulsed (see 4.5.1). 2. APPLICAB

10、LE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made

11、to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The followin

12、g specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Speci

13、fication for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Phil

14、adelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws

15、 and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/744D 3 FIGURE 1. Physical dimensions, surface mount (UB, UBN, UBC and UBCN versions). Provided by IHSNot for ResaleNo reprod

16、uction or networking permitted without license from IHS-,-,-MIL-PRF-19500/744D 4 Dimensions Symbol Inches Millimeters Note Min Max Min Max BL .115 .128 2.92 3.25 BW .095 .108 2.41 2.74 BH .046 .056 1.17 1.42 UB only, 4 BH .046 .056 1.17 1.42 UBN only, 5 BH .055 .069 1.40 1.75 UBC only, 6 BH .055 .06

17、9 1.40 1.75 UBCN only, 7 CL .128 3.25 CW .108 2.74 LL1 .022 .038 0.56 0.97 3 PLS LL2 .014 0.356 3 PLS LS1.035 .039 0.89 0.99 LS2.071 .079 1.80 2.01 LW .016 .024 0.41 0.61 r .008 0.20 6 r1 .012 0.30 8 r2 .022 0.56 UB TA= +175C, t = 24 hours minimum; or TA= +150C, t = 48 hours minimum. B5 1042 Acceler

18、ated steady-state reverse bias, condition A, VDS= rated VDS; TA= +175C, t = 120 hours minimum; or TA= +150C, t = 240 hours minimum. B5 2037 Test condition D. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/744D 9 4.4.2.2 Group B inspect

19、ion, table E-VIB (JANTXV) of MIL-PRF-19500. Subgroup Method Condition B2 1051 Test condition C, 25 cycles. B3 1042 Intermittent operation life, condition D, 2,000 cycles. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing

20、in table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method Condition C2 2036 Terminal strength is not applicable. C5 3161 See 4.3.3, RJA= (see 1.3). C6 1042 Intermittent operation life, condition D, 6,0

21、00 cycles. 4.4.4 Group D inspection. Group D inspection shall be conducted in accordance with table E-VIII of MIL-PRF-19500 and table II herein. 4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-1

22、9500 and as specified in table III herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse meas

23、urement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/744D 10 TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Condition Min Max Subgroup 1 Visual and

24、mechanical inspection 2071 Subgroup 2 Thermal impedance 2/ 3161 See 4.3.3 ZJAC/W Breakdown voltage drain to source 3407 VGS= 0, ID= 250 A dc, bias condition C V(BR)DSS60 V dc Gate to source voltage (threshold) 3403 VDS VGS, ID= 250 A dc VGS(TH)11.0 2.0 V dc Gate current 3411 VGS= +10 V dc, bias cond

25、ition C, VDS= 0 IGSSF1+100 nA dc Gate current 3411 VGS= -10 V dc, bias condition C, VDS= 0 IGSSR1-100 nA dc Drain current 3413 VGS= 0, bias condition C, VDS= 80 percent of rated VDSIDSS11.0 A dc Static drain to source on-state resistance 3421 VGS= 4.5 V dc, condition A, pulsed (see 4.5.1), ID= ID2rD

26、S(ON)10.680 Forward voltage 4011 VGS= 0, condition A, pulsed (see 4.5.1), ID= ID1 VSD1.2 V (pk) Subgroup 3 High temperature operation: TC= TJ= +125C Gate current 3411 VGS= 10 V dc, bias condition C, VDS= 0 IGSS2200 nA dc Drain current 3413 VGS= 0, bias condition C, VDS= 80 percent of rated VDS IDSS2

27、10 A dc Static drain to source on-state resistance 3421 VGS= 4.5 V dc, condition A, pulsed (see 4.5.1), ID= ID2 rDS(ON)20.980 Gate to source voltage (threshold) 3403 VDS= VGS, ID= 250 A dc VGS(TH)20.5 V dc See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking perm

28、itted without license from IHS-,-,-MIL-PRF-19500/744D 11 TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Condition Min Max Subgroup 3 Continued. Low temperature operation: TC= TJ= -55C Gate to source voltage (threshold) 3403 VDS VGS, ID= 250 A dc VGS(TH)3

29、2.5 V dc Subgroup 4 Forward transconductance 3475 VDS= 10 V dc, ID= ID2, pulsed (see 4.5.1) gFS0.23 S Gate series resistance 3402 Condition B RG14 Subgroup 5 Safe operating area test 3474 VDS= 80 percent of rated VDS(see 1.3); tP= 10 ms, IDas specified on figure 4 Electrical measurements See table I

30、, subgroup 2 Subgroups 6 Not applicable Subgroup 7 Gate charge 3471 Condition B, ID= ID1, VDD = 50 percent rated VDSOn-state gate charge QG(on)3.6 nC On gate to source charge QGS11.5 nC On gate to drain charge QGD11.8 nC Turn-off gate charge QG(off)3.6 nC Off gate to source charge QGS21.5 nC Off gat

31、e to drain charge QGD21.8 nC Reverse recovery time 3473 di/dt = -100 A/s, VDD 25 V, ID= ID1trr 78 ns 1/ For sampling plan, see MIL-PRF-19500. 2/ This test required for the following end-point measurements only: Group B, subgroups 3 and 4 (JANS). Group B, subgroups 2 and 3 (JANTXV). Group C, subgroup

32、 2 and 6. Group E, subgroup 1. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/744D 12 TABLE II. Group D inspection. Inspection MIL-STD-750 Symbol Pre-irradiation limits Post-irradiation limits Post-irradiation limits Unit 1/ 2/ 3/ R an

33、d F R F Method Conditions Min Max Min Max Min Max Subgroup 1 Not applicable Subgroup 2 TC= + 25C Steady-state total dose irradiation (VGSbias) 4/ 1019 VGS= 10 V; VDS= 0 Steady-state total dose irradiation (VDSbias) 4/ 1019 VGS= 0; VDS= 80 percent of rated VDS (pre-irradiation) End-point electricals:

34、 Breakdown voltage, drain to source 3407 VGS= 0; ID= 250 A; bias condition C V(BR)DSS60 60 60 V dc Gate to source voltage (threshold) 3403 VDS VGSID= 250 A VGS(th)11.0 2.0 1.0 2.0 1.0 2.0 V dc Gate current 3411 VGS= +10 V, VDS= 0, bias condition C IGSSF1100 100 100 nA dc Gate current 3411 VGS= -10 V

35、, VDS= 0, bias condition C IGSSR1-100 -100 -100 nA dc Drain current 3413 VGS= 0, bias condition C; VDS= 80 percent of rated VDS(pre-irradiation) IDSS1.0 1.0 1.0 A dc Static drain to source on-state voltage 3405 VGS= 4.5 V; condition A, pulsed (see 4.5.1), ID1= ID2VDS(on)0.275 0.275 0.275 V dc Forwar

36、d voltage source drain diode 4011 VGS = 0; ID= ID1bias condition C VSD1.2 1.2 1.2 V dc 1/ For sampling plan see MIL-PRF-19500. 2/ Group D qualification may be performed prior to lot formation. Wafers qualified to these group D QCI requirements may be used for any other specification sheets utilizing

37、 the same die design. 3/ At the manufacturers option, group D samples need not be subjected to the screening tests, and may be assembled in its qualified package or in any qualified package that the manufacturer has data to correlate the performance to the designated package. 4/ Separate samples sha

38、ll be pulled for each bias. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/744D 13 * TABLE III. Group E inspection (all quality levels) - for qualification or re-qualification only. Inspection MIL-STD-750 Sample Method Conditions plan

39、Subgroup 1 Temperature cycling 1051 Condition G, 500 cycles 45 devices c = 0 Hermetic seal Fine leak Gross leak Electrical measurements 1071 See table I, subgroup 2 Subgroup 2 1/ Steady-state gate bias Electrical measurements 1042 Condition B, 1,000 hours See table I, subgroup 2 45 devices c = 0 Ste

40、ady-state reverse bias Electrical measurements 1042 Condition A, 1,000 hours See table I, subgroup 2 Subgroup 3 Switching time test 3472 ID= ID1, VGS= 5.0 V dc, RG= 24, VDD= 50 percent rated VDSMaximum measurements: td(on) = 8 ns; tr = 24 ns; td(off) = 30 ns; tf = 13 ns 45 devices c = 0 Subgroup 4 T

41、hermal impedance curves 3161 See MIL-PRF-19500. Sample size N/A Subgroup 10 Commutating diode for safe operating area test procedure for measuring dv/dt during reverse recovery of power MOSFET transistors or insulated gate bipolar transistors 3476 Test conditions shall be derived by the manufacturer

42、. 22 devices c = 0 Subgroup 11 3 devices SEE 2/ 3/ 1080 See MIL-STD-750 method 1080 and 6.2. 1/ A separate sample for each test shall be pulled. 2/ Group E qualification of SEE effect testing may be performed prior to lot formation. Qualification may be extended to other specification sheets utilizi

43、ng the same structurally identical die design. 3/ Device qualification to a higher level LET is sufficient to qualify all lower level LETs. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/744D 14 FIGURE 2. Thermal impedance graph. Therm

44、al Impedance0.111010010000.00001 0.0001 0.001 0.01 0.1 1 10 100 1000Pulse-Width tP(sec.)ThermalImpedance ZthJC(C/W)D=0.50D=0.20D=0.10D=0.05D=0.02D=0.01Single PulseProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/744D 15 FIGURE 3. Deratin

45、g drain current . Maximum Current Rating0.00.20.40.60.81.025 50 75 100 125 150TC, Case Temperature (C)ID, DrainCurrent(Amps.)Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/744D 16 FIGURE 4. Safe-operating-area graph.0.010.11100.1 1 10

46、100VDS, Drain-to-Source Voltage (V)ID,DrainCurrent(A)Operation in this area limited by RDS(on)TC = 25oCTJ = 150oCSingle Pulse100s1ms10msDCProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/744D 17 5. PACKAGING 5.1 Packaging. For acquisitio

47、n purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging re

48、quirements are maintained by the Inventory Control Points packaging activities within the Military Service or Defense Agency, or within the Military Services system commands. Packaging data retrieval is available from the managing Military Departments or Defense Agencys automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be