DLA MIL-PRF-19500 715-2009 SEMICONDUCTOR DEVICE FIELD EFFECT TRANSISTOR ENCAPSULATED PLASTIC N-CHANNEL SILICON TYPE 2N7563 2N764 2N7565 JAN JANTX AND JANTXV.pdf

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1、 MIL-PRF-19500/715 23 February 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, ENCAPSULATED PLASTIC, N-CHANNEL, SILICON, TYPE 2N7563, 2N764, 2N7565, JAN, JANTX, AND JANTXV This specification is approved for use by all Departments and Agencies of the Department of

2、Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for plastic, N-channel, enhancement-mode, MOSFET, power transistors. Three levels of product as

3、surance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1, TO-247AC. 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Types PT(1) TC= +25C RJC(2) VDSVDGVGSID1TC=+25C(3) ID2TC= +100C (3) ISIDM (4) TJand TSTG VISO70,000 ft. altitude W C/W

4、V dc V dc V dc A dc A dc A dc A dc C V dc 2N7563 150 0.60 60 60 20 90 90 90 360 500 2N7564 200 0.81 100 100 20 75 53 75 300 500 2N7565 320 0.26 200 200 20 90 60 90 360 -55 to +150 500 (1) For TC +25C, derate linearly 1.2 W/C for 2N7563, 1.6 W/C for 2N7564, 2.56 W/C for 2N7565. (2) See figure 2, ther

5、mal impedance curves. (3) See figure 3, derating current graph for IDat TC +25C, limited to 90 A. (4) IDM= 4 X ID1as calculated in footnote (3). AMSC N/A FSC 5961 INCH-POUND Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P

6、.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http:/assist.daps.dla.mil/. Tat )on (Rx RT- T= IJMDSJCCJMDProvided by IHSNot for R

7、esaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/715 21.4 Primary electrical characteristics at TC= +25C. Type Min V(BR)DSSVGS= 0 VGS(TH)VDS VGSMax IDSS1VGS= 0 VDS= rated VDS Max rDS(ON)(1) VGS= 10 V dc EASat IASIASV dc V dc Min Max A dc ohm ohm mJ A 2N7563 60

8、2.0 4.0 25 0.0055 310 130 2N7564 100 3.5 5.5 1.0 0.014 190 45 2N7565 200 3.0 5.0 25 0.023 101 56 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited

9、 in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this s

10、pecification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are th

11、ose cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at http:/assist.daps

12、.dla.mil/quicksearch/ or http:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Non-Government publications. The following documents form a part of this document to the extent specified herein. Unless otherwise s

13、pecified, the issues of these documents are those cited in the solicitation or contract. JESD22-A101 Steady-State Temperature Humidity Bias Life Test. JESD22-A102 Accelerated Moisture Resistance - Unabashed Autoclave. JESD22-A112 ESD Testing. A Moisture-Induced Stress Sensitivity for Plastic Surface

14、 Mount Devices. (Copies of these documents are available from http:/www.jedec.org/default.cfm or the Electronics Industries Alliance, 2500 Wilson Boulevard, Arlington, VA 22201-3834.) 2.4 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the te

15、xt of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without l

16、icense from IHS-,-,-MIL-PRF-19500/715 3NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. All terminals are isolated from the case. 4. Dimension and tolerancing shall be in accordance with ASME Y14.5M. FIGURE 1. Physical dimensions for TO-247AC (2N7563, 2N7

17、564, 2N7565). Symbol Dimensions Inches Millimeters Min Max Min Max BL .775 .800 19.70 20.30 BW .602 .626 15.30 15.90 CH .185 .209 4.70 5.30 LL .559 .583 14.20 14.80 LL1 .145 .170 3.70 4.30 LO .087 .102 2.20 2.60 LS .215 BSC 5.45 BSC LT .016 .031 0.40 0.80 LU .079 .094 2.00 2.40 LU1 .118 .133 3.00 3.

18、40 LW .039 .056 1.00 1.40 Q .217 BSC 5.50 BSC TT .059 .089 1.50 2.50 MHD .140 .143 3.55 3.65 R .177 .217 4.50 5.50 Term 1 Gate Term 2 Drain Term 3 Source Term 4 Drain Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/715 43. REQUIREMENTS

19、3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qua

20、lified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. IAS- Rated avalanche current, nonrepetitive. 3.4 Interface and physical dim

21、ensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition documen

22、t (see 6.2). Lead finish can be redone if needed after all screening tests. 3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic discharge protection. 3.5.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the ac

23、cumulation of static charge. However, the following handling practices are recommended (see 3.5). a. Devices should be handled on benches with conductive handling devices. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in cond

24、uctive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care should be exercised during test and troubleshooting to apply not more than maximum rated voltage to any lead. h. Gate must be terminated to source, R 1

25、00 k, whenever bias voltage is to be applied drain to source. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical test requirements

26、 shall be table I as specified herein. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500, except as specified herein. 3.8.1 JAN brand. The “J“ denotes the JAN brand. Refer to the certificate of conformance or unit packaging for quality assurance level. 3.9 Workmanship. Semiconductor dev

27、ices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/715 54. VERIFICATION 4.1 Cla

28、ssification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and table I). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-P

29、RF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specifie

30、d in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.3 Screening (JANTX, JANTXV). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measur

31、ements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Measurement Screen (see table E-IV of MIL-PRF-19500) JANTXV Level (1) Gate stress test (see 4.3.1). (1) Method 3470 of MIL-STD-750, EAS(see 4.3.2). 1a Not applicable. 1b

32、Method 2069 of MIL-STD-750 required, pre-cap internal visual inspection. 2 Not required. 3a Method 1051 of MIL-STD-750 required, temperature cycling. 3b Not required. (1) 3c Method 3161 of MIL-STD-750, thermal impedance (see 4.3.3). 4 Not required. 5 through 9 Not applicable. 10 Method 1042 of MIL-S

33、TD-750, test condition B required, VGS= 16 V dc. 11 Subgroup 2 of table I herein. 12 Method 1042 of MIL-STD-750, test condition A required. 13a Subgroup 2 of table I herein IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, which

34、ever is greater. IDSS1= 10 A dc or 100 percent of initial value, whichever is greater. rDS(on)1= 20 percent of initial value. VGS(TH)1= 20 percent of initial value. 13b through 16 Not applicable (1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in

35、screening requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/715 64.3.1 Gate stress test. Apply VGS= 20 V minimum for t = 250 s minimum. 4.3.2 Single pulse avalanche energy (EAS). a. Peak current (IAS). . IAS(max). b. Peak ga

36、te voltage (VGS). 10 V minimum (up to rated VGS). c. Gate to source resistor (RGS) 25 RGS 200. d. Initial case temperature (TC) . +25C +10C, -5C. e. Inductance (L) minimum mH V)V- V()I(2EBRDDBR2D1AS . f. Number of pulses to be applied . 1 pulse minimum. g. Supply voltage (VDD) 50 V maximum. 4.3.3 Th

37、ermal impedance. The thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table II, group E, subgroup 4 herein. 4.4

38、Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection (JAN, JANTX, and JANTXV). Group B inspectio

39、n shall be conducted in accordance with the conditions specified in 4.4.2.1 for JAN, JANTX, and JANTXV and as follows. Electrical measurements (end-points) for JAN, JANTX, and JANTXV shall be after each subgroup below and shall be in accordance with table I, subgroup 2. Separate samples may be used

40、for each subgroup. Subgroup Method Condition B1 2026 1022 Solderability. Resistance to solvents (not required for laser marked devices). B1 JESD22-A113 (1) Pre conditioning to level 1 for the following sequential tests: B1 JESD22-A102 (1) Autoclave: condition C, 96 hours B1 1051 Temp cycle 168 cycle

41、s condition G. B2 1056 Thermal shock: 10 cycles, condition A. B3 1042 High temperature reverse bias: Condition B, 80 percent (minimum) of rated VGS. B3 1042 Intermittent operation life: Condition D, 2,000 cycles. The heating cycle shall be 30 seconds minimum. B4 2075 Decap internal visual. B4 2031 T

42、 = 260C, 10 sec., n = 20, c = 0. (1) Non-government standard document, see 2.3. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/715 74.4.2.1 Group B sample selection (JAN, JANTX, and JANTXV). Samples for subgroups in group B shall be in

43、 accordance with MIL-PRF-19500 and as specified herein. Separate samples may be used for each subgroup. In the event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. If the new “assem

44、bly lot” option is exercised, the failed assembly lot shall be scrapped. 4.4.3 Group C inspection. Group C inspection shall be as specified in 4.4.3.1 and shall include tests which are performed periodically. Electrical measurements (end-points) for JAN, JANTX, and JANTXV shall be after each subgrou

45、p in 4.3.1 and as specified in table I, subgroup 2 herein. Separate samples may be used for each subgroup. For rules on resubmission for failed subgroup, see MIL-PRF-19500. Sample sizes shall be in accordance with the corresponding group C subgroup from table E-VII of MIL-PRF-19500. 4.4.3.1 Group C

46、inspection (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Separate samples may be used for each step, n = 77, c = 0 Subgroup Method Condition C1 JESD22-A113 (1) Pre conditioning to level 1 C1 2066 Physical dimensions: In accordance with figure 1 herein. C2 1056 Thermal shock: condition B. Electrical mea

47、surements. C2 1051 Temp. cycle: condition G, 500 cycles. C3 JESD22-A101 (1) High temperature reverse bias: 500 hours, (85/85 biased): 80 percent V; max of 100 V. C4 1042 High temperature reverse bias: Condition B, 80 percent (minimum) of rated VGS. C4 1042 Intermittent operation life: Condition D, 5

48、,000 cycles. The heating cycle shall be 30 seconds minimum. C5 3161 Thermal resistance: RJC(max) = rated RJC. (1) Non-government standard document, see 2.3. 4.4.3.2 Group C sample selection. Samples for subgroups in group C shall be in accordance with MIL-PRF-19500. 4.4.4 Group E inspection. Group E

49、 inspection shall be performed for qualification or re-qualification only. The tests specified in table II herein must be performed to maintain qualification. Separate samples may be used for each subgroup. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. C