DLA MIL-PRF-19500 603 J-2013 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS N-CHANNEL SILICON TYPES 2N7268 2N7269 2N7270 2N7394 2N7268U 2N7269U .pdf

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1、 MIL-PRF-19500/603J 6 May 2013 SUPERSEDING MIL-PRF-19500/603H 1 July 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7268, 2N7269, 2N7270, 2N7394, 2N7268U, 2N7269U, 2N7270U, AND 2N7394U, JANTXVR, F,

2、 G, H; JANSR, F, G, AND H This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the pe

3、rformance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JA

4、NHC and JANKC die versions. * 1.2 Physical dimensions. See figure 1 (TO-254AA) and figure 2 (surface mount, TO-276AB). 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. Type PT (1) PTTA= +25C RJARJC(2) VDSVDGVGSID1 (3) (4) ID2(3) (4) TC= +100C ISW W C/W C/W V dc V dc V dc A dc A dc A dc 2N7

5、394, 2N7394U 2N7268, 2N7268U 2N7269, 2N7269U 2N7270, 2N7270U 150 150 150 150 4 4 4 4 35 35 35 35 0.83 0.83 0.83 0.83 60 100 200 500 60 100 200 500 20 20 20 20 35.0 34.0 26.0 11.0 30.0 21.0 16.0 7.0 35.0 34.0 26.0 11.0 Type IDMTJand TSTGVISO70,000 ft altitude A(pk) C V dc 2N7394, 2N7394U 2N7268, 2N72

6、68U 2N7269, 2N7269U 2N7270, 2N7270U 140 136 104 44 -55 to +150 N/A N/A N/A 500 See notes next page. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semic

7、onductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 June 20

8、13. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/603J 2 1.3 Maximum ratings. Unless otherwise specified, TC= +25C - Continued. (1) Derate linearly 1.2 W/C for TC +25C. (2) See figure 3 for thermal impedance curves. (3) The following

9、formula derives the maximum theoretical IDlimit. IDis limited by package design: (4) See figure 4 for maximum drain current graphs. 1.4 Primary electrical characteristics at TC= +25C. Type Min V(BR)DSS VGS= 0 VGS(TH)1VDS VGSID= 1.0 Max IDSS1VGS= 0 VDS= 80 Max rDS(ON) (1) VGS= 12 V dc EASat ID1IASID=

10、 1.0 mA dc mA dc percent of rated VDSTJ= +25C at ID2TJ= +150C at ID2V dc Min Max A dc ohm ohm mJ A 2N7394, 2N7394U 2N7268, 2N7268U 2N7269, 2N7269U 2N7270, 2N7270U 60 100 200 500 V dc 2.0 2.0 2.0 2.0 V dc 4.0 4.0 4.0 4.0 25 25 25 50 0.027 0.065 0.100 0.450 0.030 0.132 0.230 1.260 500 500 500 500 35.0

11、 34.0 26.0 11.0 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional informatio

12、n or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Spe

13、cifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS M

14、IL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil or https:/assist.dla.mil or from the Standardization Document Order De

15、sk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this docu

16、ment, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. ( ) ( ) Tat )on (Rx RT- T= IJMDSJCCJMDProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/603J 3 Dimensions Symbol Inches Millimeters M

17、in Max Min Max BL .535 .545 13.59 13.84 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .510 .570 12.95 14.48 LO .150 BSC 3.81 BSC LS .150 BSC 3.81 BSC MHD .139 .149 3.53 3.78 MHO .665 .685 16.89 17.40 TL .790 .800 20.07 20.32 TT .040 .050 1.02 1.27 TW .535 .545 13.59 13.84 Term 1 Drain Term 2 Sour

18、ce Term 3 Gate NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Refer to applicable symbol list. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 5. All terminals are isolated from case. FIGURE 1. Physical dimensions for TO-254A

19、A (2N7268, 2N7269, 2N7270, and 2N7394). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/603J 4 Q1 (2X)BWBLCH LW1LL1LL2(2X)CLCLLS2LS1LW2(2X)Q2CLLH(3X)12 3-C-0.10 (0.004)-B-A-0.36 (0.014) CM A B MM3 SURFACESFIGURE 2. Dimensions and config

20、uration of surface mount package outline, TO-276AB (2N7268U, 2N7269U, 2N7270U, AND 2N7394U). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/603J 5 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information onl

21、y. 3. The lid shall be electrically isolated from the drain, gate and source. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Dimensions and configuration of surface mount package outline, TO-276AB (2N7268U, 2N7269U, 2N7270U, AND 2N7394U) - Continued. Dimensions

22、 SMD-1 Symbol Inches Millimeters Min Max Min Max BL .620 .630 15.75 16.00 BW .445 .455 11.30 11.56 CH .142 3.60 LH .010 .020 0.26 0.50 LL1.410 .420 10.41 10.67 LL2.152 .162 3.86 4.11 LS1.210 BSC 5.33 BSC LS2.105 BSC 2.67 BSC LW1.370 .380 9.40 9.65 LW2.135 .145 3.43 3.68 Q1.030 0.76 Q2.035 0.89 Term

23、1 Drain Term 2 Gate Term 3 Source Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/603J 6 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Dev

24、ices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations

25、, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. IASRated avalanche current, nonrepetitive nC nano Coulomb. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 and 2 herein. M

26、ethods used for electrical isolation of the terminal feedthroughs shall employ materials that contain a minimum of 90 percent AL2O3(ceramic). Examples of such construction techniques are metallized ceramic eyelets or ceramic walled packages. 3.4.1 Lead finish. Lead finish shall be solderable in acco

27、rdance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Internal construction. Multiple chip construction is not permitted. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Ele

28、ctrostatic discharge protection. The devices covered by this specification require electrostatic discharge protection. 3.6.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. However, the following handling practices are recommen

29、ded (see 3.6). a. Devices should be handled on benches with conductive handling devices. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f.

30、Maintain relative humidity above 50 percent if practical. g. Care should be exercised during test and troubleshooting to apply not more than maximum rated voltage to any lead. h. Gate must be terminated to source, R 100 k, whenever bias voltage is to be applied drain to source. 3.7 Electrical perfor

31、mance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.8 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.9 Workmanship. Semiconductor devices shall be

32、processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/603J 7 4. VERIFICATION 4.1 Classification

33、of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-1

34、9500. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that

35、were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/603J 8 * 4.3 Screening (JANTXV and JANS levels only). Sc

36、reening shall be in accordance with appendix E, table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500) (1) (2) Me

37、asurement JANS level JANTXV levels (3) Gate stress test (see 4.3.1). Gate stress test (see 4.3.1). (3) Single pulse avalanche energy test, method 3470 of MIL-STD-750 (see 4.3.2). Single pulse avalanche energy test, method 3470 of MIL-STD-750 (see 4.3.2). (3) 3c Method 3161 of MIL-STD-750 (see 4.3.3)

38、. Method 3161 of MIL-STD-750 (see 4.3.3). 9 Subgroup 2 of table I herein. IGSSF1, IGSSR1, IDSS1. Subgroup 2 of table I herein. 10 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750, test condition B 11 IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(TH)1Subgroup 2 of table I herein IGSSF1=

39、 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 10 A dc or 100 percent of initial value, whichever is greater. IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(TH)1Subgroup 2 of table I herein. 12 Method 1042 of MIL-

40、STD-750, test condition A. Method 1042 of MIL-STD-750, test condition A. 13 Subgroups 2 and 3 of table I herein IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 10 A dc or 100 percent of initial val

41、ue, whichever is greater. rDS(on)1= 20 percent of initial value VGS(th)1= 20 percent of initial value. Subgroup 2 of table I herein IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 10 A dc or 100 pe

42、rcent of initial value, whichever is greater. rDS(on)1= 20 percent of initial value VGS(th)1= 20 percent of initial value. 17 Method 1081 of MIL-STD-750 (see 4.3.4), Endpoints: Subgroup 2 of table I herein. (Not applicable for TO-276AB surface mount devices). Method 1081 of MIL-STD-750 (see 4.3.4),

43、Endpoints: Subgroup 2 of table I herein. (Not applicable for TO-276AB surface mount devices). (1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1are measured. (2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1, and VGS(th)1shall be invoked. (3) Shall be performed anytime af

44、ter temperature cycling, screen 3a; JANTXV level does not need to be repeated in screening requirements. * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/603J 9 4.3.1 Gate stress test. Apply VGS= 30 V minimum for t = 250 s minimum. 4.3

45、.2 Single pulse avalanche energy EAS. a. Peak current (IAS) IAS(max). b. Peak gate voltage (VGS) . 12 V. c. Gate to source resistor (RGS) . 25 RGS 200. d. Initial case temperature (TC) +25C +10C, -5C. e. Inductance (L) . L = (2*EAS/(ID1)2)*(VBR-VDD)/VBR) mH minimum. f. Number of pulses to be applied

46、 . 1 pulse minimum. g. Supply voltage (VDD) . 25 V for 2N7268, 2N7394, and 2N7268U; 50 V for 2N7269, 2N7269U, and 2N7270. 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining I

47、M, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table III, group E, subgroup 4 herein. * 4.3.4 Dielectric withstanding voltage. a. Magnitude of test voltage900 V dc. b. Duration of application of test voltage15 seconds (min). c. Points of application of test v

48、oltageAll leads to case (bunch connection). d. Method of connectionMechanical. e. Kilovolt-ampere rating of high voltage source1,200V /1.0 mA (min). f. Maximum leakage current.1.0 mA. g. Voltage ramp up time.500V /second. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with appendix E, table V of MIL-PRF-19500 and table I herein. End-poin