DLA MIL-PRF-19500 431 E-2011 SEMICONDUCTOR DEVICE FIELD EFFECT TRANSISTORS N-CHANNEL SILICON TYPES 2N4091 2N4092 2N4093 2N4091UB 2N4092UB AND 2N4093UB JAN JANTX AND JANTXV.pdf

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1、 MIL-PRF-19500/431E 12 September 2011 SUPERSEDING MIL-PRF-19500/431D 21 November 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N4091, 2N4092, 2N4093, 2N4091UB, 2N4092UB, AND 2N4093UB, JAN, JANTX, AND JANTXV This specification is appro

2、ved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for N-channel, junction, silic

3、on field-effect transistors intended for use in chopper and analog gate circuit applications. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (similar to TO-18) and figure 2 (UB devices). 1.3 Maximum ratings. TA

4、= +25C, unless otherwise specified. Type PT(1) TA= +25C (free air) VDSVDGVGSIGTJTSTG2N4091, UB 2N4092, UB 2N4093, UB W 0.36 0.36 0.36 V dc 40 40 40 V dc 40 40 40 V dc -40 -40 -40 mA d 10 10 10 C -65 to +175 -65 to +175 -65 to +175 C -65 to +200 -65 to +200 -65 to +200 (1) Derate linearly 2.4 mW/C fo

5、r TA +25C. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currenc

6、y of this address information using the ASSIST Online database at https:/assist.daps.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 12 December 2011. Provided by IHSNot for ResaleNo reproduction or networking permitted without

7、 license from IHS-,-,-MIL-PRF-19500/431E 2 1.4 Primary electrical characteristics. TC= +25C, unless otherwise specified. Type rds(on)VGS= 0 ID= 1 mA Max IDSS(1) VGS= 0 V VDS= 20 V dc VDS(on) maximum ID= 6.6 mA VGS= 0 ID= 4.0 mA VGS= 0 ID= 2.5 mA VGS= 0 mA dc V dc V dc V dc 2N4091, UB 2N4092, UB 2N40

8、93, UB Min Max Min Max .20 .20 .20 30 50 80 30 15 8 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or r

9、ecommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed.

10、 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DE

11、PARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or https:/assist.dap

12、s.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the te

13、xt of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/431E 3 Dimensions Symbol

14、Inches Millimeters Note Min Max Min Max CD .178 .195 4.52 4.95 CH .170 .210 4.32 5.33 HD .209 .230 5.31 5.84 LC .100 TP 2.54 TP 6 LD .016 .021 0.41 0.53 7,8 LL .500 .750 12.7 19.05 7,8 LU .016 .019 0.41 0.48 7,8 L1.050 1.27 7,8 L2.250 6.35 7,8 Q .030 0.76 5 TL .028 .048 0.71 1.22 3,4 TW .036 .046 0.

15、91 1.17 3 r .010 0.25 10 45 TP 45 TP 6 NOTES: 1. Dimension are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TL shall be held for a minimum length of .011 (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defin

16、ed by HD, CD, and Q. 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 7. Dimension LU applies between L1and L2. Dimension LD applies bet

17、ween L2and LL minimum. Diameter is uncontrolled in L1and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 12.

18、 Lead 1 = source, lead 2 = drain, lead 3 = gate. FIGURE 1. Physical dimensions (similar to TO-18). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/431E 4 Dimensions Symbol Inches Millimeters Min Max Min Max BH .046 .056 1.17 1.42 BL .11

19、5 .128 2.92 3.25 BW .085 .108 2.16 2.74 CL .128 3.25 CW .108 2.74 LL1 .022 .038 0.56 0.96 LL2 .017 .035 0.43 0.89 LS1.036 .040 0.91 1.02 LS2.071 .079 1.81 2.01 LW .016 .024 0.41 0.61 r .008 .203 r1 .012 .305 r2 .022 .559 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general inform

20、ation only. 3. Hatched areas on package denote metallized areas. 4. Lid material: Kovar. 5. Pad 1 = Drain, Pad 2 = Source, Pad 3 = Gate, Pad 4 = Shielding connected to the lid. 6. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 2. Physical dimensions, surface mount

21、(UB version). UB Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/431E 5 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished un

22、der this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definiti

23、ons used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified MIL-PRF-19500, and figure 1 (similar to TO-18) and figure 2 (UB devices). 3.4.1 Lead finish. Lead finish shall be solderable in accordance with M

24、IL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Internal construction. Multiple chip construction is not permitted to meet the requirements of this specification. 3.5 Electrostatic discharge protectio

25、n. The devices covered by this specification require electrostatic discharge protection. 3.5.1 Handling. Metal oxide semiconductor (MOS) devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. However, the following handling practices are recommende

26、d (see 3.5). a. Devices should be handled on benches with conductive handling devices. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber or silk in MOS areas. f. Mai

27、ntain relative humidity above 50 percent if practical. g. Care should be exercised during test and troubleshooting to apply not more than maximum rated voltage to any lead. h. Gate must be terminated to source, R or 100 k, whenever bias voltage is applied drain to source. 3.6 Marking. Marking shall

28、be in accordance with MIL-PRF-19500, except for the UB suffix package. Marking on the UB package shall consist of an abbreviated part number, the date code, and the manufacturers symbol or logo. The prefixes JAN, JANTX, and JANTXV can be abbreviated as J, JX, and JV respectively. The “2N“ prefix and

29、 the “UB“ suffix can also be omitted. 3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.8 Electrical test requirements. The electrical test requirements shall be as specified in table

30、 I. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-

31、PRF-19500/431E 6 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and table I). 4.2 Qualification inspection. Qualification insp

32、ection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performan

33、ce of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. * 4.3 Screening (JANTX and JANTXV levels only). Screening shall be in accordance with table E-IV of MI

34、L-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANTX and JANTXV levels 9 , 10 Not applicable. 11 IGSS1, ID

35、SS, rDS(on)12 See 4.3.1. 13 Subgroup 2 of table I herein; IGSS1= 50 pA dc or 100 percent of initial value, whichever is greater. rDS(on)= 20 percent of initial value. IDSS= 20 percent of initial value. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: Method 1039 of MIL-STD-75

36、0, condition A; TA= +175C; VGS= -24 V dc; VDS= 0. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/431E 7 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. 4.4.1 Group

37、A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. * 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and as

38、follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method Condition B2 1051 Test condition G. B3 1027 Condition A, TA= +175C; VDS= 0; VGS= -24 V dc, 340 hours. B6 1032 TSTG= +200C. 4.4.3 Group C inspection. Group C inspection shall be condu

39、cted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method Condition C2 2036 Test condition E, not applicable to UB suffix devices.

40、 C6 1026 VGS= -24 V dc; VDS= 0; TJ= +175C 3C. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table II herein. Electrical measurements (end-points) shall be in accordan

41、ce with table I, subgroup 2 herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduct

42、ion or networking permitted without license from IHS-,-,-MIL-PRF-19500/431E 8 TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Limit Unit Method Conditions Symbol Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Breakdown voltage, gate to source 3401 Bias condition C; VDS=

43、0 V dc; IG= -1.0 A dc V(BR)GSS-40 V dc Gate reverse current 3411 VGS= -20 V dc; VDS= 0; bias condition C IGSS1-0.1 nA dc Drain current 3413 VDS= 20 V dc; bias condition C ID(off)1-0.1 nA dc 2N4091, UB 2N4092, UB 2N4093, UB VGS= -12 V dc VGS= -8 V dc VGS= -6 V dc Drain current 3413 VDS= 20 V dc; VGS=

44、 0 (pulsed, see 4.5.1); bias condition C IDSS2N4091, UB 2N4092, UB 2N4093, UB 30 15 8 mA dc mA dc mA dc Static drain to source on- state resistance 3421 VGS= 0; pulsed (see 4.5.1); bias condition B; ID= 1.0 mA dc rDS(on)2N4091, UB 2N4092, UB 2N4093, UB 30 50 80 Drain to source “on“ state voltage 340

45、5 VGS= 0; bias condition B VDS(on)2N4091, UB 2N4092, UB 2N4093, UB ID= 6.6 mA dc ID= 4.0 mA dc ID= 2.5 mA dc 0.2 0.2 0.2 V dc V dc V dc See footnote at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/431E 9 TABLE I. Group

46、A inspection - Continued. Inspection 1/ MIL-STD-750 Limit Unit Method Conditions Symbol Min Max Subgroup 3 High temperature operation: TA= +150C Gate current 3411 Bias condition C; VDS= 0 V dc VGS= -20 V dc; IGSS2-0.2 A dc Drain current 3413 VDS= 20 V dc; bias condition A ID(off)22N4091, UB 2N4092,

47、UB 2N4093, UB VGS= -12 V dc VGS= -8 V dc VGS= -6 V dc 0.2 0.2 0.2 A dc A dc A dc Subgroup 4 Small-signal common-source short-circuit input capacitance 3431 VDS= 20 V dc; VGS= 0; f = 1 MHz Ciss16 pF Small-signal common-source reverse transfer capacitance 3433 VDS= 0 V dc; VGS= 20; f = 1 MHz Crss5 pF

48、Turn-on delay time See figure 3 td(on)2N4091, UB 2N4092, UB 2N4093, UB 15 15 15 ns ns ns Rise time See figure 3 tr2N4091, UB 2N4092, UB 2N4093, UB 10 20 40 ns ns ns Turn-off delay time See figure 3 td(off)2N4091, UB 2N4092, UB 2N4093, UB 40 60 80 ns ns ns Subgroups 5, 6, 7 Not applicable 1/ For sampling plan, see MIL-PRF-19500.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/431E 10 * TABLE II. Group E inspection (all quality levels) for qualification or re-qualification only. Inspection MIL-STD-750 Sample