DLA MIL-PRF-19500 430 C-2011 SEMICONDUCTOR DEVICE DUAL FIELD EFFECT TRANSISTORS N-CHANNEL SILICON TYPES 2N5545 2N5546 AND 2N5547 JAN JANTX AND JANTXV.pdf

《DLA MIL-PRF-19500 430 C-2011 SEMICONDUCTOR DEVICE DUAL FIELD EFFECT TRANSISTORS N-CHANNEL SILICON TYPES 2N5545 2N5546 AND 2N5547 JAN JANTX AND JANTXV.pdf》由会员分享，可在线阅读，更多相关《DLA MIL-PRF-19500 430 C-2011 SEMICONDUCTOR DEVICE DUAL FIELD EFFECT TRANSISTORS N-CHANNEL SILICON TYPES 2N5545 2N5546 AND 2N5547 JAN JANTX AND JANTXV.pdf（14页珍藏版）》请在麦多课文档分享上搜索。

1、 MIL-PRF-19500/430C 18 August 2011 SUPERSEDING MIL-PRF-19500/430B 30 July 1999 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DUAL FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N5545, 2N5546, AND 2N5547, JAN, JANTX, AND JANTXV This specification is approved for use by all Departments

2、and Agencies of the Department of Defense. * The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for two electrically isolated, matched N-channel, junction,

3、 silicon field-effect transistors in one package. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (similar to TO-71). 1.3 Maximum ratings. TA= +25C, unless otherwise specified. PT (1) TA= +25C VDGVGS IGTSTG One

4、section Both sections mW 250 mW 400 V dc 50 V dc -50 mA dc 30 C -65 to +200 (1) For TA +25C, derate linearly 1.67 mW/C one section, 2.67 mW/C both sections. * 1.4 Primary electrical characteristics. TC= +25C, unless otherwise specified. Limits IDSSVGS= 0 VDS= 15 V dc VGS(off)VDS= 15 V dc ID= 0.5 nA

5、dc |yfs| VDS= 15 V dc VGS= 0 f = 1 kHz |yfs| VDS= 15 V dc VGS= 0 f = 100 MHz Nf Ciss VDS= 15 V dc VGS= 0 f = 1 MHz Crss VDS= 15 V dc VGS= 0 f = 1 MHz VDG= 15 V dc ID= 200 A dc RG= 1 M f = 10 Hz Min Max mA dc 0.5 8.0 V dc -0.5 -4.5 mmho 1.5 6.0 mmho 1.5 2N5545 dB 3.5 2N5546 dB 5.0 pF 6.0 pF 2.0 AMSC

6、N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this addres

7、s information using the ASSIST Online database at https:/assist.daps.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 November 2011. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IH

8、S-,-,-MIL-PRF-19500/430C 2 * 1.4 Primary electrical characteristics - Continued. IDSS1 - IDSS2 VDG= 15 V dc VGS= 0 |yfs|1 - |yfs|2 VDG= 15 V dc ID= 200 A dc f = 1 kHz |VGS1- VGS2|2 VDG= 15 V dc ID= 200 A dc |(VGS1- VGS2)TA| (1) VDG= 15 V dc ID= 200 A dc TA(1)= +25C TA(2)= -55C VDG= 15 V dc ID= 200 A

9、 dc TA(1)= +25C TA(2)= +125C 2N# 5545 5546 5547 5545 5546 5547 5545 5546 5547 5545 5546 5547 5545 5546 5547 Min Max 0.95 1.05 0.9 1.10 0.9 1.10 0.97 1.03 0.95 1.05 0.9 1.10 mV dc 5 mV dc 10 mV dc 15 mV dc 0.8 mV dc 1.6 mV dc 3.2 mV dc 1 mV dc 2 mV dc 4 (1) Pulsed, (see 4.5.1). 2. APPLICABLE DOCUMENT

10、S * 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure

11、 the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. * 2.2.1 Specifications, standards, and handbooks. The following speci

12、fications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. MIL-PRF-19500 - Semiconductor Devices, General Specification for. * DEPARTMENT OF DEFENSE STANDA

13、RDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or https:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3

14、Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a spec

15、ific exemption has been obtained. 3. REQUIREMENTS * 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. * 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the

16、 qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/430C 3 Dimensions Ltr Inches Millimeters Notes Min Max Min Ma

17、x A .209 .230 5.31 5.84 B .178 .195 4.52 4.95 C .170 .210 4.32 5.33 D .500 .750 12.70 19.05 E .021 0.53 3 F .016 .019 0.41 0.48 4 J .028 .048 0.71 1.22 7 K .036 .046 0.91 1.17 L .020 0.51 N .0146 Nom. .037 Nom. 5 P .0354 Nom. .90 Nom. 5 NOTES: 1. Dimensions are in inches. * 2. Millimeters are given

18、for general information only. 3. Measured in the zone beyond .250 inch (6.35 mm) from the seating plane. 4. Measured in the zone from .50 inch (1.27 mm) to .250 inch (6.35 mm) from the seating plane. 5. When measured in a gauging plane .054 +.001, -.000 inch (1.37 -0.03, -0.00 mm) below the seating

19、plane of the transistor, maximum diameter leads shall be within .007 inch (0.18 mm) of their true location relative to a maximum width tab. Smaller diameter leads shall fall within the outline of the maximum diameter lead tolerance. 6. All leads electrically insulated from case and each section elec

20、trically isolated from the other. 7. Measured from the maximum diameter of the actual device. * FIGURE 1. Physical dimensions (similar to TO-71). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/430C 4 3.3 Abbreviations, symbols, and def

21、initions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. |IDSS1| - . Zero-gate-voltage drain current ratio. |IDSS2| |IG1- IG2| . Gate current differential. |VGS1- VGS2| Gate-source voltage differential. |(VGS1- VGS2)TA| . Gate-source voltage differential

22、change with temperature. Vn. Equivalent short circuit input noise voltage for unity bandwidth. |yfs|1 - Small-signal common-source forward transfer admittance ratio. |yfs|2 |yos|1 - |yos|2| . Small-signal common-source output admittance differential. * 3.4 Interface and physical dimensions. The inte

23、rface and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Marking. Markin

24、g shall be in accordance with MIL-PRF-19500. 3.6 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection. * 3.6.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of electrostatic charge. The

25、 following handling practices shall be followed: a. Devices shall be handled on benches with conductive handling devices. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic,

26、rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent, if practical. g. Care shall be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to any lead. * h. Gate must be terminated to source, R 100 k, whenever bias voltage is to be applied d

27、rain to source. 3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4 and table I. * 3.8 Electrical test requirements. The electrical test requirements shall be specified in table I herein. Provided by I

28、HSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/430C 5 * 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance

29、. * 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). * c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspect

30、ion shall be in accordance with MIL-PRF-19500 and as specified herein. * 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performanc

31、e of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.3 Screening (JANTX and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL

32、-PRF-19500), and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500 Measurement JANTX and JANTXV levels 9 Not applicable. 10 Not applicable.

33、 11 IDSS, IGSS, |yfs| 12 See 4.3.1. 13 Subgroup 2 of table I herein; IGSS= 0.1 nA dc or 100 percent of initial value, whichever is greater. |yfs| = 20 percent of initial value. IDSS= 10 percent of initial value. 4.3.1 Power burn-in. Power burn-in conditions are in accordance with MIL-STD-750, method

34、 1039, condition A and as follows: TA= +175C; VGS= -40 V dc; VDS= 0. * 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. Alternate flow is allowed for quality conformance inspection in accordance with MIL-PRF-19500. 4.4.1 Group A in

35、spection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/430C 6 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance wi

36、th the conditions specified for subgroup testing in table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and as follows. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table II herein. Subgroup Method Condition B3 1027 VGS= -40 V dc;

37、TA= +175C; VDS= 0. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500 and 4.4.3.1 (JAN, JANTX, and JANTXV) herein for group C testing. Electrical measurements (end-points) and delta requirem

38、ents shall be in accordance with the applicable steps of table II herein. Subgroup Method Condition C2 2036 Lead fatigue: Test condition E. C6 1027 VGS= -40 V dc; TA= +175C; VDS= 0. ( 4.4.4 Gate current differential. The gate current of each individual section of a dual unit shall be measured at the

39、 specified conditions and the absolute value of the difference of the two currents shall be calculated. If possible, this difference shall be measured directly to improve accuracy. * 4.4.5 Gate-source voltage differential. The gate-source voltage of each individual section of a dual unit shall be me

40、asured at the specified conditions and the absolute value of the difference of the two voltages shall be calculated. If possible, this difference shall be measured directly to improve accuracy. * 4.4.6 Gate-source voltage differential change with temperature. The gate-source voltage differential sha

41、ll be measured at the two specified temperatures in accordance with 4.4.5 herein except that the polarities of the differentials and identities of the individual sections shall be maintained. The absolute value of the algebraic differences between the values at the two temperatures shall be calculat

42、ed. If possible, this difference should be measured directly to improve accuracy. A mathematical formula for the parameter is: |(VGS1- VGS2)T1- (VGS1- VGS2)T2| * 4.4.7 Zero-gate-voltage drain current ratio. The value for the zero-gate-voltage drain current for each individual section of a dual unit

43、shall be measured using method 3413 of MIL-STD-750. The zero-gate-voltage drain current ratio shall be calculated by dividing one of the values by the other. If possible, this ratio shall be measured directly to improve accuracy. * 4.4.8 Small-signal common-source forward transfer admittance ratio.

44、The magnitude for the small-signal common-source forward transfer admittance ratio for each individual section of a dual unit shall be measured using method 3455 of MIL-STD-750. The small-signal common-source forward transfer admittance ratio shall be calculated by dividing one of the values by the

45、other. If possible, this ratio shall be measured directly to improve accuracy. * 4.4.9 Small-signal common-source output admittance differential. The magnitude for the small-signal common-source output admittance differential for each individual section of a dual unit shall be measured using method

46、3453 of MIL-STD-750. The small-signal common-source output admittance differential shall be calculated by dividing one of the values by the other. If possible, this ratio shall be measured directly to improve accuracy. 4.4.10 Spot noise figure and equivalent input noise voltage. These tests should b

47、e conducted with a model 2173C Quan Tech Laboratories test set or equivalent. Conditions shall be as specified in table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/430C 7 * 4.4.11 Group E inspection. Group E inspection shall be c

48、onducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.5 Methods of inspection. Methods of inspection shall be as spe

49、cified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/430C 8 * TABLE I. Group A inspection. Inspection 1/ MIL-ST