DLA MIL-PRF-19500 369 H-2010 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON POWER TYPE 2N3441 JAN JANTX AND JANTXV.pdf
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1、 MIL-PRF-19500/369H 15 July 2010 SUPERSEDING MIL-PRF-19500/369G 10 August 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPE 2N3441, JAN, JANTX, AND JANTXV This specification is approved for use by all Departments and Agencies of the Department of Defens
2、e. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistor. Three levels of product assurance are provided for each device ty
3、pe as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (similar to TO-66). 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. PTRJARJCVCBOVCEOVEBOVCERIBICTSTGand TA= +25C (1) TC= +25C (1) (2) TJW 3.0 W 25 C/W 58.5 C/W 3 V dc 160 V dc 140 V dc 7.0 V dc 150 A dc 2.0 A dc 3.0 C
4、 -65 to +200 (1) For derating see figures 2 and 3. (2) For thermal impedance see figure 4. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
5、 Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be complet
6、ed by 15 October 2010. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/369H 2 1.4 Primary electrical characteristics. Unless otherwise specified, TA= +25C. hFE2VCE= 4 V dc IC= 0.5 A dc |hfe| VCE= 4 V dc IC= 0.5 A dc hfeVCE= 4 V dc IC= 0
7、.5 A dc VCE(sat)IC= 0.5 A dc IB= 50 mA dc Pulse response f = 100 kHz tontoffMin Max 25 100 4 40 15 100 V dc 1 s 8 s 15 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited i
8、n other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this spe
9、cification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are thos
10、e cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.dap
11、s.dla.mil/quicksearch or https:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document
12、and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-195
13、00 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviatio
14、ns, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/369H 3 FIGURE 1. Physical dimensions (similar to TO-66). TO-66 Pro
15、vided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/369H 4 Dimensions Ltr Inches Millimeters Notes Min Max Min Max CD .470 .500 11.94 12.70 CH .250 .340 6.35 8.64 HR .350 8.89 HR1.115 .145 2.92 3.68 HT .050 .075 1.27 1.91 LD .028 .034 0.71 0.8
16、6 4, 6 LL .360 .500 9.14 12.70 L1.050 1.27 6 MHD .142 .152 3.61 3.86 4 MHS .958 .962 24.33 24.43 PS .190 .210 4.83 5.33 3 PS1.093 .107 2.36 2.72 3 S .570 .590 14.48 14.99 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. These dimensions should be measured
17、 at points .050 inch (1.27 mm) +.005 inch (0.13 mm) - 0 inch below seating plane. When gauge is not used, measurement will be made at the seating plane. 4. Two places. 5. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch
18、 (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. 6. Lead diameter shall not exceed twice LD within L1. 7. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 8. Pin 1 is the emitter and pin
19、 2 is the base. The collector shall be electrically connected to the case. FIGURE 1. Physical dimensions - Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/369H 5 3.4 Interface and physical dimensions. Interface and physical d
20、imensions shall be as specified in MIL-PRF-19500, and on figure 1. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical perfo
21、rmance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.6 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.7 Marking. Marking shall be in accordance with MIL-P
22、RF-19500. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein
23、are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and table I). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E in
24、spection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall
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