DLA MIL-PRF-19500 108 L-2011 SEMICONDUCTOR DEVICE THYRISTORS (CONTROLLED RECTIFIERS) SILICON TYPES 2N682 2N683 2N685 THROUGH 2N692 2N692A 2N5206 JAN AND JANTX.pdf

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1、 MIL-PRF-19500/108L 8 August 2011 SUPERSEDING MIL-PRF-19500/108K 4 December 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, THYRISTORS (CONTROLLED RECTIFIERS), SILICON, TYPES 2N682, 2N683, 2N685 THROUGH 2N692, 2N692A, 2N5206, JAN AND JANTX This specification is approved for use by all Dep

2、artments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNPN silicon power, reverse-blocking triode thyr

3、istors. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO-208 stud, formerly TO-48). 1.3 Maximum ratings. TA = 25C unless otherwise stated. IO(1) ITSM(2) t = 7 ms VGMTJTSTGdi/dt(repetitive) Min Max A 16 A 150 V

4、(pk) 5 C -65 +125 C -65 +150 A/s 5 (1) This average forward current is for a maximum case temperature of +65C, and 180 electrical degrees of conduction. (2) Surge rating is non-recurrent and applies only with device in the conducting state. The peak rate of surge current must not exceed 100 amperes

5、during the first 10 s after switching from the off (blocking) state to the on (conducting) state. This time is measured from the point where the thyristor voltage has decayed to 90 percent of its initial blocking value. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this docum

6、ent should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mi

7、l/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 November 2011. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/108L 2 * 1.4 Primary electrical characteristics (common

8、to all types). Limits VTMIHVGT(1) IGT(1) Min Max V (pk) 2.0 mA dc 50 V dc 0.25 3.0 mA dc 80 * (1) TC= -65 to +120C. 1.4.1 Individual ratings. Type VRRM(1) VDRM2N682 2N683 2N685 2N686 2N687 2N688 2N689 2N690 2N691 2N692 2N692A 2N5206 V (pk) 50 100 200 250 300 400 500 600 700 800 800 1,000 V (pk) 50 1

9、00 200 250 300 400 500 600 700 800 800 1,000 (1) Values apply for zero or negative gate voltage (VGM). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/108L 3 NOTES: 1. Dimensions are in inches. Millimeters are given for general informat

10、ion only. 2. Device contour, except on hex head and noted terminal dimensions, is optional within zone defined by CD and OAH, CD not to exceed actual HF. 3. Contour and angular orientation of terminals 1 and 2 with respect to hex portion and to each other are optional. 4. Chamfer or undercut on one

11、or both ends of the hexagonal portion are optional. 5. Square or radius on end of terminal is optional. 6. Minimum difference in terminal lengths to establish datum line for numbering terminals. 7. Dimension SD is pitch diameter of coated threads. 8. In accordance with ASME Y14.5M, diameters are equ

12、ivalent to x symbology. FIGURE 1. Physical dimensions (TO-208 stud, formerly TO-48). Dimensions Symbol Inches Millimeters Notes Min Max Min Max b .115 .139 2.92 3.53 3 b1.210 .300 5.33 7.62 3 CD .543 13.8 2 CH .550 14.00 e2.125 3.17 6 HF .544 .563 13.8 14.3 HT .075 .200 1.9 5.08 4 OAH 1.193 30.3 2 S

13、 .120 3.05 3 SD 1/4 - 28 UNF 2A SL .422 .453 10.7 11.5 SU .090 2.29 T .125 .165 3.17 4.19 T1.060 .075 1.52 1.9 UD .220 .249 5.59 6.32 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/108L 4 2. APPLICABLE DOCUMENTS 2.1 General. The docume

14、nts listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this l

15、ist, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and han

16、dbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE

17、STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or https:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

18、* 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless

19、a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by t

20、he qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows: VAA- Anode power supp

21、ly voltage (dc). 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is

22、desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Lead material. Where a choice of lead material is desired, it shall be specified in the acquisition document (see 6.2). 3.4.3 Construction. These devices shall be constructed in a manner and using materials which enable the

23、thyristors to meet the applicable requirements of MIL-PRF-19500 and this document. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/108L 5 3.6 Electrical performance charact

24、eristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I herein. 3.8 Workmanship. Semiconductor devices shall be processed in

25、such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Sc

26、reening (see 4.3). * c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. * 4.3 Screening (JANTX level). Screening shall be in accordance with appendix E, table E-IV of MIL-P

27、RF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANTX level 3a Method 1051 of MIL-STD-750, condition F, 20 cyc

28、les. 10 Not required 11 IRRM1, IDRM1, VGT1, VTM, and IGT112 Method 1040 of MIL-STD-750, condition A, TC= +125C minimum, RGK 1K ; VDRM, VRRM= rated (see 1.4.1); .25 A or .125 A fuse may be used in accordance with method 1040 of MIL-STD-750. 13 Subgroup 2 of table I herein, IRRM1= 100 percent of initi

29、al value or +0.4 mA (pk), whichever is greater. IDRM1= 100 percent of initial value or +0.4 mA (pk), whichever is greater. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/108L 6 4.4 Conformance inspection. Conformance inspection shall b

30、e in accordance with MIL-PRF-19500 and as specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of table I, subgroups 1 and 2 inspection only (table E-VIB, group B, subgroup 1 of MIL-

31、PRF-19500 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2). 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with appendix E, table E-V of MIL-PRF-19500, and table I herein. 4.4.2 Group B inspection (JAN and JANTX). Gr

32、oup B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIB (JAN and JANTX) of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with the applicable steps and footnotes of table II herein. Subgroups 3 and

33、 6 of table E-VIB of MIL-PRF-19500, shall be performed on a sample from the sublot containing the highest voltage rated devices in the lot. Subgroup Method Condition B3 1037 TJbetween cycles +100C; ton= toff 1 minute for 2,000 cycles. No heat sink or forced air cooling on the device shall be permitt

34、ed during the on state. B3 (option 1) 1026 TC= 108C 5C, 50 minutes on, Io= 4 A, TCuncontrolled, 10 minutes off. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table E-VII of MIL-PRF-19500. Electrical mea

35、surements (end-points) requirements shall be in accordance with the applicable steps of table II herein. 4.4.3.1 Group C inspection, appendix E, table E-VII of MIL-PRF-19500. Subgroup Method Conditions C2 2036 Test condition A, weight = 10 pounds, duration = 15 seconds. C6 1037 TJbetween cycles +100

36、C, ton= toff 1 minute for 6,000 cycles. No heat sink or forced air cooling on the device shall be permitted during the on state. C6 (option 1) 1026 TC= 108C 5C, 50 min on, Io= 4 A, TCuncontrolled, 10 minutes off. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropria

37、te tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/108L 7 TABLE I. Group A inspection. Inspection 1/ MI

38、L-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Reverse blocking current 4211 AC method, bias condition D; f = 60 Hz, VRRM= rated (see 1.4.1) IRRM12 mA (pk) Forward blocking current 4206 AC method, bias condition D; f = 60 Hz; VDRM=

39、 rated (see 1.4.1) IDRM12 mA (pk) Gate trigger voltage and current 4221 V2= VD= 6 V dc; RL= 50 ; Re= 20 maximum VGT1IGT13 35 V dc mA dc Forward on voltage 4226 ITM= 50 A(pk) (pulse); pulse width = 8.5 ms; maximum; duty cycle = 2 percent maximum VTM2 V (pk) Holding current 4201 Bias condition D; VAA=

40、 24 V dc maximum; ITM= IF1= 1 A dc; IT= IF2= 100 mA dc; trigger voltage source = 10 V; trigger PW = 100 s (minimum); R2= 20 IH50 mA dc Reverse gate current 4219 VG= 5 V dc IG250 mA dc Subgroup 3 High temperature operation: TC = +120C minimum Reverse blocking current 4211 AC method, bias condition D;

41、 f = 60 Hz; VRRM= rated (see 1.4.1) IRRM25 mA (pk) Forward blocking current 4206 AC method, bias condition D; f = 60 Hz; VDRM= rated (see 1.4.1) IDRM25 mA (pk) See footnote at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-1950

42、0/108L 8 TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 3 - Continued. Gate trigger voltage 4221 TC= +120C minimum; Re= 20 maximum VGT2.25 V dc 2N682 2N683 2N685 2N686 2N687 2N688 V2= VDM= 50 V dc; RL= 140 V2= VDM= 100 V dc; R

43、L= 140 V2= VDM= 200 V dc; RL= 140 V2= VDM= 250 V dc; RL= 650 V2= VDM= 300 V dc; RL= 650 V2= VDM= 400 V dc; RL= 3 k 2N689 2N690 2N691 2N692 2N692A 2N5206 V2= VDM= 500 V dc; RL= 3 k V2= VDM= 600 V dc; RL= 3 k V2= VDM= 700 V dc; RL= 3 k V2= VDM= 800 V dc; RL= 3 k V2= VDM= 800 V dc; RL= 3 k V2= VDM= 1,0

44、00 V dc; RL= 3 k Low temperature operation: TC= -65C maximum Reverse blocking current 4211 AC method, bias condition D; f = 60 Hz; VRRM= rated (see 1.4.1) IRRM32 mA (pk) Forward blocking current 4206 AC method, bias condition D; f = 60 Hz; VDRM= rated (see 1.4.1) IDRM32 mA (pk) Gate trigger voltage

45、and current 4221 V2= VD= 6 V dc; RL= 50 ; Re= 20 maximum VGT3IGT23 80 V dc mA dc Subgroups 4 and 5 Not applicable Subgroup 6 Surge current 4066 ITSM= 150 A (pk) (half-sine wave); ten surges, one per minute; IO= 16 A at rated VRRM; TC= +65C; f = 60 Hz; surge duration = 7 ms, minimum Electrical measur

46、ements See table II, steps 1, 2, 3, 4, 5, and 6 See footnote at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/108L 9 TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions

47、 Min Max Subgroup 7 Exponential rate of voltage rise 4231 Bias condition D; TC= +120C minimum, dv/dt= 25 v/s; repetition rate = 60 pps; test duration = 15 s; C = 1.0 F; RL= 50 VDV dc 2N682 2N683 2N685 2N686 2N687 2N688 2N689 2N690 2N691 2N692 2N692A 2N5206 VAA= 50 V dc VAA= 100 V dc VAA= 200 V dc VA

48、A= 250 V dc VAA= 300 V dc VAA= 400 V dc VAA= 500 V dc VAA= 600 V dc VAA= 700 V dc VAA= 800 V dc VAA= 800 V dc VAA= 1,000 V dc 47 95 190 240 285 380 475 570 665 760 760 950 Circuit-commutated turn-off time 4224 TC= +120C minimum; ITM= 10 A; ton= 100 50 s; di/dt= 5 A/s minimum; di/dt= 8 A/s maximum; reverse voltage at t1= 15 V minimum; repetition rate = 60 pps maximum; di/dt= 20 V/s; gate bias conditions; gate source voltage = 0 V; gate source resistance = 100 tOFF2N682 2N683 2N685 2N686 2N687 2N688 2N689 2N690 2N691 2N692 2N692A 2N5206 VDM= VDRM= 50 V (pk); VRRM= 50