CECC 50 001- 021 NEN CECC 50 001-021 Silicon Diodes in Glass Envelope BAW62 (1N914 1N916 1N4148 1N4149 1N4446 1N4447 1N4448 1N4449 CV7367 CV7368 CV7757 CV8616 CV9637) (En)《NEN CECC.pdf

《CECC 50 001- 021 NEN CECC 50 001-021 Silicon Diodes in Glass Envelope BAW62 (1N914 1N916 1N4148 1N4149 1N4446 1N4447 1N4448 1N4449 CV7367 CV7368 CV7757 CV8616 CV9637) (En)《NEN CECC.pdf》由会员分享，可在线阅读，更多相关《CECC 50 001- 021 NEN CECC 50 001-021 Silicon Diodes in Glass Envelope BAW62 (1N914 1N916 1N4148 1N4149 1N4446 1N4447 1N4448 1N4449 CV7367 CV7368 CV7757 CV8616 CV9637) (En)《NEN CECC.pdf（11页珍藏版）》请在麦多课文档分享上搜索。

1、*I 1114447 y 1N4448, iN4449 ? CV7367 y CV7368, CV7756 y CV7757, CV8617, CV9637) Electronic component of assessed quality - Detail specification for silicon diodes in glass envelope: BAH2 (1N914, 1N916, 1N4148, 114149, 1N4446, 7N4447, 114448, 714449, CV7367, 07368, CV7756, CV7757, CV8617, CV9637) W L

2、974499 01153645 031 NEN-CECC 50 001-021 le druk, mart 1980 CONTENTS 1 Mechanical descriptiori 2 Electrical application 3 Levels of quality assessment h 5 Characteristics 6 7 Marking and terminal ident if icat ion 8 Ordering information Limiting values (absolute maximum system) Test conditions and in

3、spection requirements * Page 1 1 1 1 2 6 6 6 Aederlands Elektrotechnisch Comit (NEC) Normcommissie NEC 47 “Halfgeleiders“ Niets uit dete norm mag wodem vendwudig en/ JEDEC: DO-35 Dimensions in mm o ln O1 Marking and terminal identification see clause 7. Ordering information see clause 8. 4 Limiting

4、values (absolute maximum system) These apply over the operating temperature range, unless otherwise stated (see derating curves on page 5) 4.1 Operating ambient temperatures 4.2 Storage temperatures 4.3.1 Continuous (direct) reverse voltage 4.3.2 Peak reverse voltage t = 5 ms; = 0,l P 4.4.1 Continuo

5、us (direct) forward current 4.4.2 Peak forward current (see derating curves on page 5) t = 10 ms; = 0,5 P Surge (non repetitive) forward current t =Is P Surge (non repetitive) forward current t =lus P - 4.5.1 Virtual (equiv.) junction temperature page 1 INEN-CECC 50 001-21 CECC 50 o01 1st edition, 1

6、974 Detail specification for: Silicon diodes in glass envelope: BAW62 1N4148 CV7367 1N4 149 CV7368 1914 14446 cv7756 1N916 14447 cv7757 i 4448 cv86 17 1N4449 cvg637 2 Electrical application: Power : ambient rated Applic: switching purposes 3 Levels of quality assessment: F-L symbol amb T stg vR vRM

7、IF IFRM IFSM IFSM Tvj 1 - min. -6 5 -6 5 +I75 +200 75 1 O0 200 450 500 2 200 unit C O c V V O mA mA mA A C O See the relevant Qualified Products List for availability of components qualified under this detail specification Copyright CENELEC Electronic Components Committee Provided by IHS under licen

8、se with CECCNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-NEC-CECC 50 001-021 Page 2 CECC 50 o01 sub-cl. l) 5.1 A.I. A.I. A.I. 5.2 A.I. A:I. 5 Characteristics at ITrnb = 25 OC unless otherwise stated. The letter A or C indicates that the characteristic is veri- f

9、ied under the inspection requirements in that particular group - A2 A2 A2 C2b - C2b C2b C2b Reverse current at Y = 75 V R types, except CV8617 a79637 Reverse current at V = 100 V tp = 5 ms; = 0,1 RFI d types, except c*vT;56, CV7757 , CV8617 and 9637 Reverse current at VR = 50 V Reverse current at V

10、= 20 V ww62 R ali types, except O0637 cv86 17 -i-i-i-o-i-ii-i Reverse current at high temperature: amb = 150 OC: at VR = 75 V at VR = 20 V ali types, except 9637 and 8617 BAW62; 017367 ma W368 = 100 OC: at vR = 20 v amb iN4448 t P = 300 ps: 6 = 0,02 BAW62 and iN4448 cv9637 cv86 17 IF = 50 mA IF = 30

11、 mA 1N4449 IF = 20 mA -1N4446 and 1N4447 IF = 10 mA 1N914 1N916 1N4148 and 1N414g CV7367 CV7368 cv7756 and CV7757 cv9637 IF= 5mA BAW62 1N4448 1 N4449 IF= 1mA cv9637 cv86 17 Forward voltage at T IF = 100 mA; t = 100 OC amb = 300 us; P 6 = 0,02 BAW62 Peak forward voltage: = 50 mA; tr = 20 ns; IF t = 1

12、20 ns; = ,O1 P mw62 and all IN types IF = 50 mA; tr = 2 ns; t = 100 ns; f = 100 Mz: P 7367 and CV7368 (Characteristics continued on page 41 symb . F 1 II F F vF F bF F2 F6 F6 F5 F5 F3 FSM FSM min. 650 620 620 630 500 500 mu. 1 O00 1200 1500 1 O00 1 O00 1 O00 870 750 720 730 700 750 930 235 5 unit mV

13、 mV mV mV mV mV mV mV mV mV mV mV mV V V ) A.I. = Additional Information 1 Copyright CENELEC Electronic Components Committee Provided by IHS under license with CECCNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-1974499 O053649 787 D CECC CC 50 001-021 Page 4 cxc 5

14、0 O01 Sub-Cl 9 5.5 A.I. A. I. 5.6 A.I. 5.6 A.I. Characteristics at Pmb = 25 OC unless otherwise stated. The letter A or C indicates that the characteristic is veri- fied under the inspection requirements in that particular group Capacitance: VR=OV;f=lmz 62; 1N916; 1N4149 lN4447; 1N4449 lN914; iN4148

15、; iB4446; iN4448 cv73a; cv7757 CV367; Cv7756 Cv9637 CV8617 m367 cv7368 VR = l,o v; f= 1 MHZ VR = 1,5 V; f = 1 MHz Reverse recovery time: IF = 10 mA; Im = 10 mA; irr = 1 mA BAW62; 1N4448 CV7367; Cv7368; Cv9637 77%; Cv7757 IF = 10 mA; Im = 60 mA; irr = 1 mA Recovered charge: IF = 10 mA; VR = 5.V; R1 =

16、 500 Q; - t = 400 ns; tr = 5 ns; f = 50 kHz P BAW62; 1N4448 cv9637 IF = 1 mA; VR = 5 v; tp = 1 ps cv86 i 7 ) A.I. = Additional Information symb . %ot %ot %ot %,t 5ot %ot %ot -. trr trr trr rr -. QS QS QS min. max. - unit Copyright CENELEC Electronic Components Committee Provided by IHS under license

17、 with CECCNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-m 1974499 0053b50 4T9 m NEN-CECC 50 001-021 Page 5 100 mA 75. 50 - O Derating curves Continuous (direct) forward current (If) versus ambient temperature (Tab) 100 - mA 75- cv7367 Copyright CENELEC Electronic

18、 Components Committee Provided by IHS under license with CECCNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-397q499 0053b51 335 NEC-CECC 50 001-021 Page 6 6 7 7.1 7.2 7.3 a Test conditions and inspection requirements AU references to clause numbers are made with r

19、espect to NEN-CECC 50 O00 unless otherwise stated. Marking and terminal identification Marking : Each diode shall bear the following marking: a. The type number printed in a contrasting colour or b. A colour coded type marking according to the PRO ELECTRON system method II for the BA62 (see NEN-CECC

20、 50 O00 clause 2.5.2.2) or c. According to the JEDEC system for the 1N types (see NEN-CECC 50 O00 clause 2.5.2.1 1. Terminal identification The cathode terminal shall be identified by: a. A cathode band in a contrasting colour when the diodes b. A broad colour band in case of colour coded type marki

21、ng. are type printed or Packaging Each package containing one or more of these diodes shall bear: a. The manufacturers type number; b. The factory identification code; c. The data code; d. The quantity; e. The national CECC detail specification number i.e. NEN-CECC 50 001-021, 1st edition f. Level o

22、f Quality Assessment. Ordering information Orders for these diodes shall contain the following minimum information: Switching diode(s) type to NEN-CECC 50 001-021 level F or: Switching diode(s) type to NEN-mC 50 001-021 level L. Type numbers to be quoted from the manufacturers range below: w62 4148

23、cv-7367 1N4149 CV7368 1N9 14 1N4446 CV7756 1916 1 N4447 CV7757 i 4448 cv86 17 1 N4449 CVg637 Copyright CENELEC Electronic Components Committee Provided by IHS under license with CECCNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-m 3974499 0053b52 273 m NEN-CECC 50

24、 001-021 Page 7 GROUP A - Lt-by-lt 11 tests are on-destructive See 3.5.6 of CECC 50 000) xamination or test tp = 300 ps; 6 = 0,02 xttributes information for: subgroup B3, B4, E5 and B8 .3.5 Subgroup CTR Copyright CENELEC Electronic Components Committee Provided by IHS under license with CECCNot for

25、ResaleNo reproduction or networking permitted without license from IHS-,-,-W 1974499 0053b54 044 W NEN-CECC 50 001-021 Page 9 : IF = lo mA; rr iw= 1omA lp = 50 mA; t t = 20 na; r = 120 nsi.6 = 0,01 P YR = 20 v VR = 20 V; Tanb = 150 OC VR = 20 V; Tamb = 100 OC rF = 100 m; T, = 100 Oc t 300 pa; 6 - 0.

26、02 P P=10N k.4.8 IR = 75 v rF = 100 m; t = 300 US P 6 = 0,M (croup c continued on page 10) fi: quality assessment levei p: periodicity in months n: sample size c: acceptance criterion na: not applied inspection requirements limits qqz - C - 1 1 1 1 - 1 1 1 1 - 1 na Copyright CENELEC Electronic Compo

27、nents Committee Provided by IHS under license with CECCNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-1974499 0053655 T8O NEN-CECC 50 001-021 Page 10 reference to clause 4.4.4 4.4.10 4.3.4 D-002 LOO 1 GROUP C - Periodic inspection (continued) AL: quality assessmen

28、t level p: periodicity in months n: sample size c: acceptance criterion na: not applied Only test marked (D) are destructive (see 3.5.6.0f CECC 50 OOO) inspection I limits :onditions rt Tamb = 25 OC anless otherwise stated examination or test in. - unit Subgmup c5 change of temperature followed by:

29、sealing (D) final measurements: IR 1 VF 1 ;est Na: ZB = 200 OC; test Ql TA = -65 Oc 0 38 1 O00 subgrolq, C6 acceleration followed by: 20 O00 g; case mounted; Leads secured; cathode inwards Y-axis; t = 1 min 125 - 2000 Hz; 20 g ,.4.11 1.4.6 1.3.4 1.5.2.1 1.3.b 1-002 1-00 1 vibration final measurement

30、s: rR1 and vFl ee subgroup C5 iee subgroup C5 Subgmup C8 electrical endurance t = 1000 h final measurements: IR1. F 1 subgroup c9 storage at high temperature (Di t = 1000 h final measurements: IR1 and vF1 rstg = 200 oc see subgroup C5 t.4.1 r.3.b ee subgroup c8 i.3.5 nttributes information for subgroup C3, C5 and 6 ifeasurementc information for IR1 and VF1 before and after C8 and C9 Subgroup CTR Prijsklasce 18 Copyright CENELEC Electronic Components Committee Provided by IHS under license with CECCNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-