BS EN 62047-5-2011 Semiconductor devices Micro-electromechanical devices RF MEMS switches《半导体装置 微电子机械装置 射频微机电转换器》.pdf

《BS EN 62047-5-2011 Semiconductor devices Micro-electromechanical devices RF MEMS switches《半导体装置 微电子机械装置 射频微机电转换器》.pdf》由会员分享，可在线阅读，更多相关《BS EN 62047-5-2011 Semiconductor devices Micro-electromechanical devices RF MEMS switches《半导体装置 微电子机械装置 射频微机电转换器》.pdf（38页珍藏版）》请在麦多课文档分享上搜索。

1、raising standards worldwideNO COPYING WITHOUT BSI PERMISSION EXCEPT AS PERMITTED BY COPYRIGHT LAWBSI Standards Publicationraising standards worldwideNO COPYING WITHOUT BSI PERMISSION EXCEPT AS PERMITTED BY COPYRIGHT LAWBSI Standards PublicationSemiconductor devices Micro-electromechanical devicesPar

2、t 5: RF MEMS switchesBS EN 62047-5:2011Incorporating corrigendum March 2012BS EN 62047-5:2011National forewordThis British Standard is the UK implementation of EN 62047-5:2011. It is identical to IEC 62047-5:2011, incorporating corrigendum March 2012.The start and finish of text introduced or altere

3、d by corrigendum is indicated in the text bytags. Text altered by IEC corrigendum March 2012 is indicated in the text by .The UK participation in its preparation was entrusted to Technical Committee EPL/47, Semiconductors.A list of organizations represented on this committee can be obtained on reque

4、st to its secretary.This publication does not purport to include all the necessary provisions of a contract. Users are responsible for its correct application. The British Standards Institution 2013. Published by BSI Standards Limited 2013.ISBN 978 0 580 78769 0ICS 31.080.99Compliance with a British

5、 Standard cannot confer immunity from legal obligations.This British Standard was published under the authority of the Standards Policy and Strategy Committee on 30 September 2011.Amendments/corrigenda issued since publicationDate Text affected30 April 2013 Implementation of IEC corrigendum March 20

6、12BRITISH STANDARDEUROPEAN STANDARD EN 62047-5 NORME EUROPENNE EUROPISCHE NORM CENELEC European Committee for Electrotechnical Standardization Comit Europen de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnische Normung Management Centre: Avenue Marnix 17, B - 1000 Brussels 2011

7、CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members. Ref. No. EN 62047-5:2011 E ICS 31.080.99 English version Semiconductor devices - Micro-electromechanical devices - Part 5: RF MEMS switches (IEC 62047-5:2011) Dispositifs semiconducteurs - Dispo

8、sitifs microlectromcaniques - Partie 5: Commutateurs MEMS-RF (CEI 62047-5:2011) Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 5: Hochfrequenz-MEMS-Schalter (IEC 62047-5:2011) This European Standard was approved by CENELEC on 2011-08-17. CENELEC members are bound to comply with th

9、e CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the Central Secretariat o

10、r to any CENELEC member. This European Standard exists in three official versions (English, French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the Central Secretariat has the same status as the offic

11、ial versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland,

12、Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland and the United Kingdom. March 2012 Foreword The text of document 47F/83/FDIS, future edition 1 of IEC 62047-5, prepared by SC 47F, Micro-electromechanical systems, of IEC TC 47, Semiconductor devices, was submitted to the IEC-CENELEC

13、parallel vote and was approved by CENELEC as EN 62047-5 on 2011-08-17. Attention is drawn to the possibility that some of the elements of this document may be the subject of patent rights. CEN and CENELEC shall not be held responsible for identifying any or all such patent rights. The following date

14、s were fixed: latest date by which the EN has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2012-05-17 latest date by which the national standards conflicting with the EN have to be withdrawn (dow) 2014-08-17 Annex ZA has been added by C

15、ENELEC. _ Endorsement notice The text of the International Standard IEC 62047-5:2011 was approved by CENELEC as a European Standard without any modification. _ BS EN 62047-5:2011 EN 62047-5:2011 (E) 2 Annex ZA (normative) Normative references to international publications with their corresponding Eu

16、ropean publications The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. NOTE When an international pu

17、blication has been modified by common modifications, indicated by (mod), the relevant EN/HD applies. Publication Year Title EN/HD Year IEC 60747-1 + corr. August 2006 2008 Semiconductor devices - Part 1: General - - IEC 60747-16-1 - Semiconductor devices - Part 16-1: Microwave integrated circuits -

18、Amplifiers EN 60747-16-1 - IEC 60747-16-4 2004 Semiconductor devices - Part 16-4: Microwave integrated circuits - Switches EN 60747-16-4 2004 IEC 60749-5 - Semiconductor devices - Mechanical and climatic test methods - Part 5: Steady-state temperature humidity bias life test EN 60749-5 - IEC 60749-1

19、0 - Semiconductor devices - Mechanical and climatic test methods - Part 10: Mechanical shock EN 60749-10 - IEC 60749-12 - Semiconductor devices - Mechanical and climatic test methods - Part 12: Vibration, variable frequency EN 60749-12 - IEC 60749-27 - Semiconductor devices - Mechanical and climatic

20、 test methods - Part 27: Electrostatic discharge (ESD) sensitivity testing - Machine model (MM) EN 60749-27 - BS EN 62047-5:2011 EN 62047-5:2011 (E) 3 CONTENTS 1 Scope . 6 2 Normative references . 6 3 Terms and definitions . 6 3.1 Switching operation . 7 3.2 Switching configuration . 7 3.3 Actuating

21、 mechanism 7 3.4 Switching network configurations . 8 3.5 Reliability (performance) . 8 3.6 Electrical characteristics 9 4 Essential ratings and characteristics . 10 4.1 Identification and types . 10 4.2 Application and specification description . 11 4.3 Limiting values and operating conditions . 11

22、 4.4 DC and RF characteristics . 11 4.5 Mechanical and environmental characteristics . 12 4.6 Additional information 12 5 Measuring methods 12 5.1 General . 12 5.1.1 General precautions 12 5.1.2 Characteristic impedances . 12 5.1.3 Handling precautions . 12 5.1.4 Types 12 5.2 DC characteristics . 12

23、 5.2.1 DC actuation voltage . 12 5.2.2 On or off resistance (d.c. contact or resistive type) 14 5.2.3 On or off capacitance (capacitive type) 15 5.2.4 Power consumption . 16 5.3 RF characteristics . 17 5.3.1 Insertion loss (Lins) 17 5.3.2 Isolation (Liso) . 19 5.3.3 Voltage standing wave ratio (VSWR

24、) . 20 5.3.4 Input power at the intercept point 21 5.4 Switching characteristics . 21 5.4.1 General . 21 5.4.2 Switching time measurement . 21 6 Reliability (performance). 22 6.1 General . 22 6.2 Life time cycles . 22 6.2.1 General . 22 6.2.2 Cold switching . 23 6.2.3 Hot switching or power handling

25、 23 6.3 Temperature cycles . 24 6.3.1 General . 24 6.3.2 Test temperature . 24 6.3.3 Test cycle 24 BS EN 62047-5:2011 EN 62047-5:2011 (E) 4 6.4 High temperature and high humidity testing . 24 6.5 Shock testing 25 6.6 Vibration testing 25 6.7 Electrostatic discharge (ESD) sensitivity testing 25 Annex

26、 A (informative) General description of RF MEMS Switches 26 Annex B (informative) Geometry of RF MEMS switches . 27 Annex C (informative) Packaging of RF MEMS switches 30 Annex D (informative) Failure mechanism of RF MEMS switches . 31 Annex E (informative) Applications of RF MEMS switches . 32 Anne

27、x F (informative) Measurement procedure of RF MEMS switches . 34 Figure 1 Terminals of RF MEMS switch . 11 Figure 2 Circuit diagram for measuring d.c. actuation voltage and RF characteristics of RF MEMS switches . 13 Figure 3 Circuit diagram for measuring impedance between the input and output ports

28、 . 14 Figure 4 Circuit diagram for measuring RF characteristics between the input and output ports using a network analyzer . 18 Figure 5 Circuit block diagram of a test setup to evaluate life time of RF MEMS switch . 22 Figure 6 Circuit block diagram of a test setup for power handling capability of

29、 RF MEMS switch 24 Figure B.1 RF MEMS series d.c. contact switch with two contact areas. . 27 Figure B.2 RF MEMS series d.c. contact switch with one contact area . 27 Figure B.3 RF MEMS shunt d.c. contact switch 28 Figure B.4 RF MEMS series capacitive type switch with one contact area 28 Figure B.5

30、RF MEMS shunt capacitive type switch . 29 Figure F.1 Measurement procedure of RF MEMS switches 34 Table A.1 Comparison of semiconductor and RF MEMS switches 26 Table B.1 Comparison of RF MEMS switches with different actuation mechanism 29 Table D.1 Comparison of failure mechanism of RF MEMS switches

31、 . 31 BS EN 62047-5:2011 EN 62047-5:2011 (E) 5 SEMICONDUCTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 5: RF MEMS switches 1 Scope This part of IEC 62047 describes terminology, definition, symbols, test methods that can be used to evaluate and determine the essential ratings and characteristic pa

32、rameters of RF MEMS switches. The statements made in this standardization are also applicable to RF (Radio Frequency) MEMS (Micro-Electro-Mechanical Systems) switches with various structures, contacts (d.c. contact and capacitive contact), configurations (series and shunt), switching networks (SPST,

33、 SPDT, DPDT, etc.), and actuation mechanism such as electrostatic, electro-thermal, electromagnetic, piezoelectric, etc. The RF MEMS switches are promising devices in advanced mobile phones with multi-band/mode operation, smart radar systems, reconfigurable RF devices and systems, SDR (Software Defi

34、ned Radio) phones, test equipments, tunable devices and systems, satellite, etc. 2 Normative references The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the n

35、ormative documents (including any amended documents) referred to applies. IEC 60747-1: 2006, Semiconductor devices Part 1: General IEC 60747-16-1, Semiconductor devices Part 16-1: Microwave integrated circuits Amplifiers IEC 60747-16-4:2004, Semiconductor devices Part 16-4: Microwave integrated circ

36、uits Switches IEC 60749-5, Semiconductor devices Mechanical and climatic test methods Part 5: Steady-state temperature humidity bias life test IEC 60749-10, Semiconductor devices Mechanical and climatic test methods Part 10: Mechanical shock IEC 60749-12, Semiconductor devices Mechanical and climati

37、c test methods Part 12: Vibration, variable frequency IEC 60749-27, Semiconductor devices Mechanical and climatic test methods Part 27: Electrostatic discharge (ESD) sensitivity testing Machine model (MM) 3 Terms and definitions For the purposes of this document, the following terms and definitions

38、apply. NOTE In the text of this standard, the term of switch is used instead of RF MEMS switch to improve the readability. BS EN 62047-5:2011 EN 62047-5:2011 (E) 6 3.1 Switching operation 3.1.1 capacitive switch switch whereby an RF signal is passed or blocked by a change of impedance ratio caused b

39、y the capacitive effect of making contact using a movable metal plate onto a dielectric film presented on a fixed metal plate 3.1.2 d.c. contact switch switch whereby an RF signal is passed or blocked by a movable metal contact 3.2 Switching configuration 3.2.1 series switch switch whereby an RF sig

40、nal applied to the input port is directly passed to the output port when a movable plate makes contact with a fixed plate 3.2.2 shunt switch switch whereby an RF signal applied to the input port is passed to the ground plane when a movable plate makes contact with a fixed plate 3.3 Actuating mechani

41、sm 3.3.1 electro-statically actuated switch switch whereby a moving plate is pulled down onto the fixed plate by an electrostatic force caused by the applied d.c. bias voltage, the moving plate returns to its original position when the bias voltage is removed NOTE Advantages are virtually zero power

42、 consumption, small electrode size, relatively short switching time, and relatively simple fabrication and disadvantage is higher actuation voltage. 3.3.2 electro-magnetically actuated switch switch whereby a movable plate or armature is pulled down onto a fixed plate by a magnetic force generated b

43、y a permanent magnet or an energised electromagnet NOTE Advantage is a low actuation voltage and disadvantages are complexity of fabrication and high power consumption. 3.3.3 electro-thermally actuated switch switch whereby a movable plate constructed of two or more differing materials with differen

44、tial thermal expansion coefficients deflects to contact a fixed plate or electrode NOTE Advantages are nearly linear deflection-versus-power relations and environmental ruggedness and disadvantages are high power consumption, low bandwidth, and relatively complex fabrication. 3.3.4 piezo-electricall

45、y actuated switch switch whereby a movable plate constructed of piezoelectric materials deflects to contact a fixed plate or electrode BS EN 62047-5:2011 EN 62047-5:2011 (E) 7 3.4 Switching network configurations 3.4.1 single-pole-single-throw switch SPST device with a single input and a single outp

46、ut, which is providing an ON-OFF switching function with switch actuation 3.4.2 single-pole-double-throw switch SPDT device with a single input and two outputs, which is transferring the through connection from one output to the other output with switch actuation 3.4.3 single-pole-multi-throw switch

47、 SPMT device with one input and multiple outputs whereby connection to one or the other of the multiple outputs is determined by switch actuation 3.4.4 double-pole-double- throw switch DPDT device with two inputs and two outputs, which is transferring the through connection from one output to the ot

48、her output with switch actuation 3.4.5 multi-pole-multi-throw switch MPMT device with multi inputs and outputs, which is transferring the through connection from multi outputs to the other multi outputs with switch actuation 3.5 Reliability (performance) 3.5.1 life time cycles number of actuating ti

49、mes which the switches are operating with satisfactory electrical performances in the on/off positions NOTE Unlike the electronic switch, a mechanical switch may fail due to stiction (micro-welding and material transfer) of a moving part and degradation of metal to metal contact used, whereas at electronic RF switches (capacitive switch) the reliability is limited by dielectric charging (charge injection and charge trapping). 3.5.2 cold switching performed switc