BS EN 62047-11-2013 Semiconductor devices Micro-electromechanical devices Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromecha.pdf

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1、BSI Standards PublicationSemiconductor devices Micro-electromechanical devicesPart 11: Test method for coefficients oflinear thermal expansion of free-standing materials for micro-electromechanical systems BS EN 62047-11:2013National forewordThis British Standard is the UK implementation of EN 62047

2、-11:2013. It isidentical to IEC 62047-11:2013.The UK participation in its preparation was entrusted to TechnicalCommittee EPL/47, Semiconductors.A list of organizations represented on this committee can be obtained onrequest to its secretary.This publication does not purport to include all the neces

3、sary provisions ofa contract. Users are responsible for its correct application. The British Standards Institution 2013Published by BSI Standards Limited 2013ISBN 978 0 580 69448 6ICS 31.080.99Compliance with a British Standard cannot confer immunity fromlegal obligations.This British Standard was p

4、ublished under the authority of theStandards Policy and Strategy Committee on 31 October 2013.Amendments issued since publicationDate Text affectedBRITISH STANDARDBS EN 62047-11:2013EUROPEAN STANDARD EN 62047-11 NORME EUROPENNE EUROPISCHE NORM September 2013 CENELEC European Committee for Electrotec

5、hnical Standardization Comit Europen de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnische Normung CEN-CENELEC Management Centre: Avenue Marnix 17, B - 1000 Brussels 2013 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members. Re

6、f. No. EN 62047-11:2013 E ICS 31.080.99 English version Semiconductor devices - Micro-electromechanical devices - Part 11: Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems (IEC 62047-11:2013) Dispositifs semiconducteurs - Disposi

7、tifs microlectromcaniques - Partie 11: Mthode dessai pour les coefficients de dilatation thermique linaire des matriaux autonomes pour systmes microlectromcaniques (CEI 62047-11:2013) Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 11: Prfverfahren fr lineare thermische Ausdehnungs

8、koeffizienten fr freistehende Werkstoffe der Mikrosystemtechnik (IEC 62047-11:2013) This European Standard was approved by CENELEC on 2013-08-21. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status

9、of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC Management Centre or to any CENELEC member. This European Standard exists in three official versions (English, French, G

10、erman). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belg

11、ium, Bulgaria, Croatia, Cyprus, the Czech Republic, Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden

12、, Switzerland, Turkey and the United Kingdom. BS EN 62047-11:2013EN 62047-11:2013 - 2 - Foreword The text of document 47F/154/FDIS, future edition 1 of IEC 62047-11, prepared by IEC/TC 47F “Microelectromechanical systems“ of IEC/TC 47 “Semiconductor devices“ was submitted to the IEC-CENELEC parallel

13、 vote and approved by CENELEC as EN 62047-11:2013. The following dates are fixed: latest date by which the document has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2014-05-21 latest date by which the national standards conflicting with

14、 the document have to be withdrawn (dow) 2016-08-21 Attention is drawn to the possibility that some of the elements of this document may be the subject of patent rights. CENELEC and/or CEN shall not be held responsible for identifying any or all such patent rights. Endorsement notice The text of the

15、 International Standard IEC 62047-11:2013 was approved by CENELEC as a European Standard without any modification. BS EN 62047-11:2013- 3 - EN 62047-11:2013 Annex ZA (normative) Normative references to international publications with their corresponding European publications The following documents,

16、 in whole or in part, are normatively referenced in this document and are indispensable for its application. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. NOTE When an international publ

17、ication has been modified by common modifications, indicated by (mod), the relevant EN/HD applies. Publication Year Title EN/HD Year IEC 62047-3 - Semiconductor devices - Micro-electromechanical devices - Part 3: Thin film standard test piece for tensile-testing EN 62047-3 - BS EN 62047-11:2013 2 62

18、047-11 IEC:2013 CONTENTS 1 Scope . 5 2 Normative References 5 3 Symbols and designations 5 4 Test piece 6 4.1 General . 6 4.2 Shape of test piece . 6 4.3 Test piece thickness 6 4.4 In-plane type test piece . 7 4.5 Out-of-plane type test piece 7 5 Testing method and test apparatus . 7 5.1 Measurement

19、 principle 7 5.1.1 General . 7 5.1.2 In-plane method 8 5.1.3 Out-of-plane method 8 5.2 Test apparatus 9 5.2.1 General . 9 5.2.2 In-plane method 9 5.2.3 Out-of-plane method 9 5.3 Temperature measurement 9 5.4 In-plane test piece handling . 9 5.5 Thermal strain measurement . 10 5.6 Heating speed . 10

20、5.7 Data analysis 10 5.7.1 General . 10 5.7.2 Terminal-based calculation 10 5.7.3 Slope calculation by linear least squares method . 10 6 Test report 10 Annex A (informative) Test piece fabrication 12 Annex B (informative) Test piece handling example . 13 Annex C (informative) Test piece releasing p

21、rocess . 14 Annex D (informative) Out-of-plane test setup and test piece example . 15 Annex E (informative) Data analysis example in in-plane test method 16 Annex F (informative) Data analysis example in out-of-plane test method 17 Bibliography 19 Figure 1 Thin film test piece . 6 Figure 2 CLTE meas

22、urement principles 8 Figure A.1 Schematic test piece fabrication process 12 Figure B.1 Auxiliary jigs and a specimen example 13 Figure C.1 Schematic illustration showing the test piece releasing process . 14 Figure D.1 Example of test setup and test piece 15 Figure E.1 Example of CLTE measurement wi

23、th an aluminium test piece . 16 Figure F.1 Example of CLTE measurement with a gold test piece 18 Table 1 Symbols and designations . 5 BS EN 62047-11:201362047-11 IEC:2013 5 SEMICONDUCTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 11: Test method for coefficients of linear thermal expansion of free

24、-standing materials for micro-electromechanical systems 1 Scope This part of IEC 62047 specifies the test method to measure the linear thermal expansion coefficients (CLTE) of thin free-standing solid (metallic, ceramic, polymeric etc.) micro-electro-mechanical system (MEMS) materials with length be

25、tween 0,1 mm and 1 mm and width between 10 m and 1 mm and thickness between 0,1 m and 1 mm, which are main structural materials used for MEMS, micromachines and others. This test method is applicable for the CLTE measurement in the temperature range from room temperature to 30 % of a materials melti

26、ng temperature. 2 Normative References The following documents, in whole or in part, are normatively referenced in this document and are indispensable for its application. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (inc

27、luding any amendments) applies. IEC 62047-3, Semiconductor devices Micro-electromechanical devices Part 3: Thin film standard test piece for tensile-testing 3 Symbols and designations Symbols and corresponding designations are given in Table 1. Table 1 Symbols and designations Symbol Unit Designatio

28、n g m Gauge length L0m Initial length of a test piece LTm Length of a test piece at temperature T T C Temperature t m Thickness of a test piece w m Width of a test piece av1/C Average coefficient of thermal expansion of a test piece S1/C Average coefficient of thermal expansion of a substrate Tm The

29、rmal deformation T1 Thermal strain BS EN 62047-11:2013 6 62047-11 IEC:2013 4 Test piece 4.1 General The test piece shall be prepared in accordance with the IEC 62047-3. It should be fabricated through the same processes used for the device where the thin film is applied. It should have dimensions in

30、 the same order of that of the objective device component in order to minimize the size effect. There are many fabrication methods depending on the applications. A typical test piece fabrication method based on MEMS processes is shown in Annex A. 4.2 Shape of test piece The dimensions of a test piec

31、e, such as thickness (t), width (w), and initial length (L0), in Figure 1 should be designed to be the same order of the device. The dimensions shall be specified within the accuracy range of 1 % of the corresponding length scale. The cross sections along the line A-A are indicated as cross-hatching

32、 in Figure 1. The gauge length in Figure 1 shall be measured from centre to centre of the gauge marks. a B B A A 1 1 4 5 3 2 A-A g t 5 w IEC 1703/13 Key 1 holes for die fixing, tying a yarn or wire for the weight hanging 2 free-standing test piece 3 gauge marks to define a gauge length 4 substrate t

33、o accommodate a test piece 5 portions to be separated before testing to make a test piece free-standing NOTE Imaginary line “a”: The support straps “5” can be separated by cutting those along this line. Figure 1 Thin film test piece 4.3 Test piece thickness Each test piece thickness shall be measure

34、d and the thickness should be recorded in the report. Each test piece thickness should be measured directly with calibrated equipment (for example scanning electron microscope, ellipsometer, etc.). However, the film thickness evaluated from step height (by scanning probe microscope, white light inte

35、rferometric microscope, or surface profilometer, etc.) along the line B-B in Figure 1 can be used as the thickness of a test piece. BS EN 62047-11:201362047-11 IEC:2013 7 4.4 In-plane type test piece The internal stress of the test piece should have proper values in order not to cause curling of the

36、 test piece. Gauge marks should be formed in the middle of a test piece. The gauge marks should not restrict the elongation of the test piece and should have small influence on test result. The stiffness of the gauge mark should be less than 1 % of that of the test piece. The symmetry in the thickne

37、ss direction should be maintained in order to avoid the curling of the test piece. A dummy part shall be attached to a test piece as shown in Figure C.1. 4.5 Out-of-plane type test piece An out-of-plane type test piece may be used if the free-standing test piece has thickness below 1 m or has low st

38、rength to hang a weight. The holes and gauge marks in Figure 1 are not necessary in case of out-of-plane type test. The supporting straps dont need to be separated. The test piece should be buckled concavely or convexly before measurement. 5 Testing method and test apparatus 5.1 Measurement principl

39、e 5.1.1 General The average CLTE value shall be obtained by linearly correlating the thermal strain change (T) by the corresponding temperature change (T). TTav= (1) The thermal strains shall be obtained with two kinds of test methods as shown in Figure 2. In-plane test method shall be preferred to

40、out-of-plane method in the view points of accuracy and uncertainties. If there is no test setup as shown in Figure 2 a) and Figure C.1, out-of-plane method shall be used as an alternative because the out-of-plane method needs a furnace and measuring equipment. BS EN 62047-11:2013 8 62047-11 IEC:2013

41、 1 T06 7 8 9 2 3 10 4 5 1 2 7 8 T1IEC 1704/13 a) In-plane type b) Out-of-plane type Key 1 heating furnace equipped with a hatch 2 viewport to observe and measure deformation of a test piece 3 metal wire or yarn to hang a weight 4 weight 5 translational stage to hold and release a weight 6 bolt to fi

42、x a die to the test die holder 7 free-standing test piece 8 test die 9 test die holder 10 dummy part for the symmetry of a test piece Figure 2 CLTE measurement principles 5.1.2 In-plane method The thermal deformation (T) shall be measured directly as a function of temperature by using a noncontact i

43、n-plane displacement measurement technique (laser interferometry, 2-D digital image correlation, etc.). The specimen should be in a furnace as shown in Figure 2a). The weight should be hung to a test piece in order to make it flattened. The elastic modulus should be independent of temperature in the

44、 range of measurement. The plastic deformation due to weight (yielding) or temperature (creep) should be avoided. The thermal strain shall be calculated by dividing the elongation by the gauge length. gTT= (2) 5.1.3 Out-of-plane method The entire profile of a specimen along the length direction shou

45、ld be measured as a function of temperature by an accurate out-of-plane displacement measurement method (white light interferometric microscope, laser Doppler interferometer, 3-D digital image correlation, etc) as shown in Figure 2b). A test piece should be initially buckled. The initial length (L0)

46、 at room temperature and successive lengths (LT) at different temperatures of a specimen shall be calculated with the profiles measured. The thermal deformation (T) shall be the difference BS EN 62047-11:201362047-11 IEC:2013 9 between LTand L0. The thermal strain shall be calculated by dividing the

47、 deformation by the initial length. 00T0TTLLLL= (3) The CLTE of a substrate should be considered to calculate the accurate CLTE of the test piece because both experience the same amount of temperature change. The substrate effect shall be considered by adding the CLTE of the substrate to the average

48、 CLTE value from measurement. The CLTE of the substrate should be measured by using a test standard 1, 2, 31if there is no certified CLTE value for the substrate. STav +=T(4) 5.2 Test apparatus 5.2.1 General The test piece should be seated in a furnace. The temperature of the furnace should be contr

49、olled within 1 C by the feedback control. 5.2.2 In-plane method A test apparatus shall be equipped with basic components shown in Figure 2a). A transparent window like a glass shall be used as a viewport. The hatch of a furnace should be closed and a predetermined weight should be hung to the yarn or metal wire to make a test piece flat enough but not to the point where it could yield. A test piece should be in a free-standing stat