ARMY MIL-I-48632 (2)-1993 INTEGRATED CIRCUIT DIGITAL CMOS CONTROL AND TIMING BASE MONOLITHIC SILICON《铁制硅互补金属氧化物半导体制数字集成电路》.pdf
《ARMY MIL-I-48632 (2)-1993 INTEGRATED CIRCUIT DIGITAL CMOS CONTROL AND TIMING BASE MONOLITHIC SILICON《铁制硅互补金属氧化物半导体制数字集成电路》.pdf》由会员分享,可在线阅读,更多相关《ARMY MIL-I-48632 (2)-1993 INTEGRATED CIRCUIT DIGITAL CMOS CONTROL AND TIMING BASE MONOLITHIC SILICON《铁制硅互补金属氧化物半导体制数字集成电路》.pdf(13页珍藏版)》请在麦多课文档分享上搜索。
1、MIL-1-48632 (2) 9999906 L85bL24 Tb8 I INCH-POUND I MIL-1-48632 (AR) AMEMDMENT 2 05 May 1993 SIJPERSEDING AMENDMENT 1 23 July 1988 MILCTARY SPECIFICATION INTEGRATED CIRCUIT, DIGITAL, CMOS CONTROL AND TiMING BASE, MONOLITHIC, SILICON This Amendment forms a part of Military Specification MIL-1-48632 (A
2、R), daked 31 July 1986, and is approved for use within the U.S. Army Armament, Munitions and Chemical Command, and is available for use by all Departments and Agencies of the Department of Defense, PAGE 1 1.1: Change: “M7i8E1/M741Elw to “M718Al/Y741Al“ FAGE 2 * 2.1.2, Third line down: Delete “extent
3、“ and substitute “extend“. PAGE 3 * 3.2.1: Delete in its entirety and substitute: “3.2.1 Dimensions, The package dimension shall conforin CO MIL-M-38510, Appendix C, Type Designation D-2, Configurat.ion 1.“ 3.2.2: Second line down: Delete “18 pin“ and substitute “16 pin“. * Third line down: Delete “
4、figure 16“ and substitute “figure 1“. AMSC N/A 1 of 13 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. Fsc 1375 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-flIL-I-48b32 (2) 999990bLSbLES 9T4 _. . MIL-1-48632 (AR)
5、 AMENDMENT 2 * Add new paragraph: “3.2.6 Presea1 bake. utectic attach substrate and sealing glass shall be baked at 125OC in a dry nitrogen atmosphere for a specified interval (16 hours minimum for eutectic attached substrate and 2 hours minimum for sealing glass) immediately prior to sealing, “ PAG
6、E 4 * 3.4.1: Delete in its entirety and substitute: “3.4.1 Maximum rating. (AS specified in Table i) TABLE I MAXIMUM RATING Characterist ic symbol Ra ti ng units 5 to +10 Volts ll inputs VIN -0.5 to +10 Volts Te rnpe r a tu r e opera ti ng Storage 3.4.2: Delete “-32C 1024.“ * 3.4.9.3: elet te in its
7、 ent.rety and substitute: “3.4.9.3 Input Terminai 4. The input voltage levels applied to the Input Terminal 4 during the sequence test must equal: High State: V13 - 1V (t 50MV) Low State: IV - (t - 50-MV) for all values of supply voltage.“ 5 Provided by IHSNot for ResaleNo reproduction or networking
8、 permitted without license from IHS-,-,-MIL-I-48b32 (2) 9999906 1856127 54T MIL-1-48632 (AR) AMENDMENT 2 PAGS 13 * 3.5.1: Delete “paragraph 3.5.15“ and substitute “paragraph 3.4.2“. * 3.5.2: Delete “paragraph 3.5.15“ and substitute “pargraph 3.4 -2“. * 3.5.5: Delete “paragraph 3.5.15“ and substitute
9、 “paragraph 3.4.2“. * 3.S.6: Delete “paragraph 3 .5 .15“ and subsk Ltute “paragraph 3.4.2“. Delete “Method 2002“ and substitute “Method 2001“. PAGE 14 * 3.5.15: Delete in .its entirety. * 3.5.16: Delete in its entirety. * 3.5.19: Delete in its entirety. PAGE 15 TARLE III: * Process Screening: Delete
10、 “3.5.18“ and substitute “3.5.1, 3.5.2, 3.5.4, 3.5.6, 3.5.13, 3.5,17“ under REQ PARA. * Solderability: Delete “1010“ and substitute “2003“ under METHOD PARA, * Leakage current: Add “4.5.2.1 15.0“ to the METHOD PARA and the LIMITS column. * Group II: Add “TA = +25*C“ into the EXAMINAI?ION OR TEST col
11、umn , REQ PARA: Delebe “3.5.15“ and substitute “3.4.2“ in 4 places 6 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-I-48b32 (2) I 99999Ob 1856130 2bL I MIL-1-48632 (AR) AMENDMENT 2 PAGE 16 * TABLE III (continued): Delete “Input Resistance Termin
12、al 5 & 7“ in its entirety and substitute: “ Exam i nation Re 9 Meth Lm t s or Test Conditions Para Para - Mi n Max Units Resistance Terminal 1& 7 - I npii t VB7.5 3.5.15 4.5.8 2 .o 6.9 V Add the following test: Req. Meth Limits No. of Sample Min. Max. Units To be Insp, - - “Exam. Co nd . Para. Para,
13、 I npil t vg=7.sv 3.4.2 4.5.8 4.0 6.9 V LPTD 3 Res i st ance Term. 5 I npii t vg=7 .sv 3.4.2 4.5.8 1,s 3.75 V LPTD 3 liesi st.ance Term. 2 Capacitance vb=5 .0V 3.4.2 4.5.12 See 3.4.2.2 see 3.4.2.2.1 Feedback Test“ *under REQ PARA: Delete 3.5.15“ and substitute “3.4.2“ in 6 places. PAGE 17 TABLE II (
14、Continued): * Leakage Current: Add “4.5.2.1 15.0“ to the METHOD PARA and the LIMITS column. * “1“ Output Voltage Terminal 11: Delete “-2.5“ and substitute “25 -“ under MIN MAX column, “1“ Output VOltage Terminal il: Delete 4.5.4.2 and substitute “4.5.9“. “O“ Output voltage Terminal 11: Delete “4.5.9
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