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    ARMY MIL-I-48632 (2)-1993 INTEGRATED CIRCUIT DIGITAL CMOS CONTROL AND TIMING BASE MONOLITHIC SILICON《铁制硅互补金属氧化物半导体制数字集成电路》.pdf

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    ARMY MIL-I-48632 (2)-1993 INTEGRATED CIRCUIT DIGITAL CMOS CONTROL AND TIMING BASE MONOLITHIC SILICON《铁制硅互补金属氧化物半导体制数字集成电路》.pdf

    1、MIL-1-48632 (2) 9999906 L85bL24 Tb8 I INCH-POUND I MIL-1-48632 (AR) AMEMDMENT 2 05 May 1993 SIJPERSEDING AMENDMENT 1 23 July 1988 MILCTARY SPECIFICATION INTEGRATED CIRCUIT, DIGITAL, CMOS CONTROL AND TiMING BASE, MONOLITHIC, SILICON This Amendment forms a part of Military Specification MIL-1-48632 (A

    2、R), daked 31 July 1986, and is approved for use within the U.S. Army Armament, Munitions and Chemical Command, and is available for use by all Departments and Agencies of the Department of Defense, PAGE 1 1.1: Change: “M7i8E1/M741Elw to “M718Al/Y741Al“ FAGE 2 * 2.1.2, Third line down: Delete “extent

    3、“ and substitute “extend“. PAGE 3 * 3.2.1: Delete in its entirety and substitute: “3.2.1 Dimensions, The package dimension shall conforin CO MIL-M-38510, Appendix C, Type Designation D-2, Configurat.ion 1.“ 3.2.2: Second line down: Delete “18 pin“ and substitute “16 pin“. * Third line down: Delete “

    4、figure 16“ and substitute “figure 1“. AMSC N/A 1 of 13 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. Fsc 1375 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-flIL-I-48b32 (2) 999990bLSbLES 9T4 _. . MIL-1-48632 (AR)

    5、 AMENDMENT 2 * Add new paragraph: “3.2.6 Presea1 bake. utectic attach substrate and sealing glass shall be baked at 125OC in a dry nitrogen atmosphere for a specified interval (16 hours minimum for eutectic attached substrate and 2 hours minimum for sealing glass) immediately prior to sealing, “ PAG

    6、E 4 * 3.4.1: Delete in its entirety and substitute: “3.4.1 Maximum rating. (AS specified in Table i) TABLE I MAXIMUM RATING Characterist ic symbol Ra ti ng units 5 to +10 Volts ll inputs VIN -0.5 to +10 Volts Te rnpe r a tu r e opera ti ng Storage 3.4.2: Delete “-32C 1024.“ * 3.4.9.3: elet te in its

    7、 ent.rety and substitute: “3.4.9.3 Input Terminai 4. The input voltage levels applied to the Input Terminal 4 during the sequence test must equal: High State: V13 - 1V (t 50MV) Low State: IV - (t - 50-MV) for all values of supply voltage.“ 5 Provided by IHSNot for ResaleNo reproduction or networking

    8、 permitted without license from IHS-,-,-MIL-I-48b32 (2) 9999906 1856127 54T MIL-1-48632 (AR) AMENDMENT 2 PAGS 13 * 3.5.1: Delete “paragraph 3.5.15“ and substitute “paragraph 3.4.2“. * 3.5.2: Delete “paragraph 3.5.15“ and substitute “pargraph 3.4 -2“. * 3.5.5: Delete “paragraph 3.5.15“ and substitute

    9、 “paragraph 3.4.2“. * 3.S.6: Delete “paragraph 3 .5 .15“ and subsk Ltute “paragraph 3.4.2“. Delete “Method 2002“ and substitute “Method 2001“. PAGE 14 * 3.5.15: Delete in .its entirety. * 3.5.16: Delete in its entirety. * 3.5.19: Delete in its entirety. PAGE 15 TARLE III: * Process Screening: Delete

    10、 “3.5.18“ and substitute “3.5.1, 3.5.2, 3.5.4, 3.5.6, 3.5.13, 3.5,17“ under REQ PARA. * Solderability: Delete “1010“ and substitute “2003“ under METHOD PARA, * Leakage current: Add “4.5.2.1 15.0“ to the METHOD PARA and the LIMITS column. * Group II: Add “TA = +25*C“ into the EXAMINAI?ION OR TEST col

    11、umn , REQ PARA: Delebe “3.5.15“ and substitute “3.4.2“ in 4 places 6 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-I-48b32 (2) I 99999Ob 1856130 2bL I MIL-1-48632 (AR) AMENDMENT 2 PAGE 16 * TABLE III (continued): Delete “Input Resistance Termin

    12、al 5 & 7“ in its entirety and substitute: “ Exam i nation Re 9 Meth Lm t s or Test Conditions Para Para - Mi n Max Units Resistance Terminal 1& 7 - I npii t VB7.5 3.5.15 4.5.8 2 .o 6.9 V Add the following test: Req. Meth Limits No. of Sample Min. Max. Units To be Insp, - - “Exam. Co nd . Para. Para,

    13、 I npil t vg=7.sv 3.4.2 4.5.8 4.0 6.9 V LPTD 3 Res i st ance Term. 5 I npii t vg=7 .sv 3.4.2 4.5.8 1,s 3.75 V LPTD 3 liesi st.ance Term. 2 Capacitance vb=5 .0V 3.4.2 4.5.12 See 3.4.2.2 see 3.4.2.2.1 Feedback Test“ *under REQ PARA: Delete 3.5.15“ and substitute “3.4.2“ in 6 places. PAGE 17 TABLE II (

    14、Continued): * Leakage Current: Add “4.5.2.1 15.0“ to the METHOD PARA and the LIMITS column. * “1“ Output Voltage Terminal 11: Delete “-2.5“ and substitute “25 -“ under MIN MAX column, “1“ Output VOltage Terminal il: Delete 4.5.4.2 and substitute “4.5.9“. “O“ Output voltage Terminal 11: Delete “4.5.9

    15、“ and substitute “4.5 .lo“. * Under REQ PARA: Delete “3.5.15“ and substitute “3.4.2“ in 8 places, under LIMITS: Delete “25“ and substitute “2,s“ in 2 places. 7 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-1-48632 (2) m 9999906 1856333 IT8 m MI

    16、L-1-48632 (AR) AMENDMENT 2 PAGE 18 * under REQ PARA: Delete “3.5.15 and substitute “3.4.2“ in 7 places, * LVD Function Voltage: TJnder requirement para., delete “3.S.16 and substitute “3.4.2“. “O“ Voltacje Terminal 11: Delete 4.5.9“ and substitute “4 ,S .lo“. PAGE 19 4.3.2: Delece “TABLE V“ and subs

    17、titute “PARLE III. 4.3.3: Delete in its ent.irety and substitute the following: “4.3.3 Inspectlon conditions. Unless otherwise specified, all examinations and tests shall be made under the following conditions: a. Temperature 25 - t 5 Degrees C h, Iliimi.di ty 10 to 75% RH 29 t 3 inches of Hg - c. p

    18、ressure d. Voltage an carrent measure +2%“ - 4.4: Delete “TARLE VI“ and substitute “TARLE IV“. PAGE 20 TABLE IV: * solderability: Delete “1010“ and substitute “2003“ under METHOD PARA. in-Process Screening: Under RE(! PAPA, delete “3.5 .lSN and substitute “3.S.17“. * Under RE(? PARA: Delete 3.5.15“

    19、and substitute “3.4.2“ in 2 places, PAGE 21 * 4.4.2: Delete “Design activity“ and substitute “technical agency“, 8 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-1-48632 (AR) AMENDMENT 2 * 4.5.2: * Add new paragraph: Delete “Figure 5 and substit

    20、ute “Figure 5A“ in 2 places. “4.5.2.1 Leakage Current (pin 2). The microcircuit shall be connected as shown in Figure 5B. be applied between terminals 16 (VB) and 8 (ground), A minimum of 50 milliseconds shall elapse before measuring the leakage current. Table II“. SA and 5B included. The supply vol

    21、tage shall The leakage current shall be as specified in * Figure 5: Delete in its entirety and substitute new Figure V B FIGURE 5A 9 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-1-48632 (2) 9999906 1856333 T70 1-1-48632 (AR) AMENDMENT 2 16 2 -

    22、 FIGURE 5B 10 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-1-48632 (2) H 9999906 1856134 907 H MIL-1-48632 (AR) AMENDMENT 2 PAGE 23 * 4.S.7: Add the followtng at: the end of paragraph: “The voltage level on terminal 10 shall be slowly decrease

    23、d. The level on pin 11 shall be observed and when pin 11 goes from a low to a high level, the voltage level on terminal 10 shall be measured as the negative going threshold on pin 10.“ PAGE 26 * 4.5.11: Second line doun: Delete “125OC“ and substitute “125OC mini mum“ . Third line down: Delete “Figur

    24、e 16“ and substitute “Figure 14“. PAGE 27 * 4.5.12: Second line down: Di.lete “between the output at terminal 9 and the input“. Last line: Delete Table 2“ and substitute“ paragraph 3.4.%.2“. * FIGURE 15: Delete in its entirety and new figure 15 included. 11 Provided by IHSNot for ResaleNo reproducti

    25、on or networking permitted without license from IHS-,-,-MIL-1-48632 (2) m 9999906 1856135 843 m MIL-1-48632 (AR) AMENDMENT 2 m-=-, 10 - -I- RAMP VOLTAGE SOURCE - (SLOPE 0.05 v/u sec) NOTE 1. FEED-BACK VOLTAGE Signal at Terminal 10 J DUT FIGURE 15, FEEDBACK SIGNAL TEST 12 Provided by IHSNot for Resal

    26、eNo reproduction or networking permitted without license from IHS-,-,-MIL-I-48b32 (2) m 9999906 1856136 7BT m e MIL-1-48632 (AR) AMENDMENT 2 PAGE 28 * 4.6: Second line down: Delete “method 5004“ and substitute “method 5004 Class B“, Burn-In Tesk: Delebe “125oC“ and subskibube “1250C minimum“ Post Bu

    27、rn-In: Delete “Table I“ and substitute “Table II“. Delebe “125C“ and substitute “25OC“. PAGE 29 * 6,4: Delete “ammunikion data cards“ in 2 places. The margins of bhis amendment are marked with an asterisk or vertical line bo indicake where changes (additions, modifications, corrections, deletions) f

    28、rom khe previous amendment were made. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evalilatt. the requirements of this document based on the entire content irrespective of the marginal nobations and relationship to khe last previous amendment Cu seodi an : Army-AR Preparing activity: Army-AR (Project: 1375-A506) 13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-


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