ANSI IEEE C62 37-1996 Standard Test Specification for Thyristor Diode Surge Protective Devices《可控硅二极管电泳保护装置标准试验规范》.pdf

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1、Recognized as anAmerican National Standard (ANSI)The Institute of Electrical and Electronics Engineers, Inc.345 Park Avenue, New York, NY 10017-2394, USACopyright 1997 by the Institute of Electrical and Electronics Engineers, Inc.All rights reserved. Published 1997. Printed in the United States of A

2、merica.IEEE is a registered trademark in the U.S. Patent (978) 750-8400. Permission to photocopy portions of any individual standard for educationalclassroom use can also be obtained through the Copyright Clearance Center.Note: Attention is called to the possibility that implementation of this stand

3、ard may require use of subject mat-ter covered by patent rights. By publication of this standard, no position is taken with respect to the existence orvalidity of any patent rights in connection therewith. The IEEE shall not be responsible for identifying patentsfor which a license may be required b

4、y an IEEE standard or for conducting inquiries into the legal validity orscope of those patents that are brought to its attention.iiiIntroduction(This introduction is not part of IEEE Std C62.37-1996, IEEE Standard Test Specification for Thyristor Diode SurgeProtective Devices.)This test specificati

5、on has been developed to enable the unified definition, test, and evaluation of thyristortype surge protective device parameters. A thyristor surge protective device limits overvoltages by switchingon and providing a low impedance path to divert the current resulting from the overvoltage. Fixed volt

6、agethyristor surge protective devices have their limiting voltage determined by the manufacturing process.Gated thyristor surge protective devices may have their limiting voltage determined by the reference poten-tial applied to the gate. By connecting the gate in series with the circuit conductors,

7、 overcurrent conditionscan also initiate device switch on and current diversion.Thyristor devices have been used since the early 70s to protect telecommunications equipment againstinduced and conducted overvoltages caused by lightning and ac systems. These devices were specially engi-neered to provi

8、de the required protection function. The device main features were an extended breakdownregion and an abnormally high value of holding current. As a result, many of the conventional thyristor termsand test methods were inadequate for these thyristor surge protective devices. Being a new device varia

9、nt,many existing surge protective device manufacturers and users applied terms and tests used for gas-dis-charge tubes or avalanche junction semiconductor surge protective devices. Compared to these establisheddevices, the thyristor surge protective device has different circuit sensitivities and thi

10、s resulted in poorparameter correlation between users and suppliers.There was a need for a comprehensive thyristor surge protective device test standard that defined terms,detailed appropriate test circuits, and measurement conditions. The Low-Voltage Solid-State Surge Protec-tive Devices Working Gr

11、oup 3.6.2 of the IEEE Surge Protection Devices Committee under took the task ofpreparing such a standard. The Working Group was formed from experts and interested parties drawn fromproducers, users, service providers, standards authorities, equipment manufacturers, test equipment manu-facturers, and

12、 laboratories.ivThe Accredited Standards Committee on Surge Arresters, C62, at the time of ballot, had the followingmembers:Joseph L. Koepfinger, ChairJohn A. Gauthier, SecretaryOrganization Represented Name of RepresentativeAssociation of American Railroads .Wayne EtterBonneville Power Administrati

13、on G. E. LeeCanadian Standards Association. D. M. SmithElectric Light and Power. J. W. WilsonR. A. JonesW. A. MaguireG. N. Miller(Alt.)T. A. WolfeInstitute of Electrical and Electronics Engineers.J. L. KoepfingerJ. J. BurkeG. L. GaibroisW. H. KappRichard OdenbergKeith StumpEdgar Taylor (Alt.)Members

14、-at-Large J. OsterhoutB. PensarSteven G. WhisenantNational Electrical Manufacturers Association .Dennis W. LenkLarry Bock (Alt.)Andi HaaPaul JeffriesHans SteinhoffJonathan J. WoodworthDennis W. LenkNational Institute for Science and Technology. F. D. MartzloffRural Electrification Administration.(va

15、cant)Underwriters Laboratories . George MauroIndividualsJoseph OsterhoutB. PensarSteven G. WhisenantAt the time this standard was completed, the Low-Voltage Solid-State Surge Protective Devices WorkingGroup 3.6.2 had the following membership:Richard Odenberg,ChairMichael J. Maytum,SecretaryJohn Brit

16、tainNisar ChaurdhryCurtis A. DomschErnie GalloJim HarrisonDavid W. HutchinsWilhelm KappBenny H. LeeWilliam J. ShannonJohn A. SiemonDonald B. TurnerDee UnterwegerJonathan WoodworthDon WordenvOther individuals who have contributed review and comments are:The following persons were on the balloting com

17、mittee:When the IEEE Standards Board approved this standard on 23 October 1996, it had the followingmembership:Donald C. Loughry,ChairRichard J. Holleman,Vice ChairAndrew G. Salem,Secretary*Member EmeritusAlso included are the following nonvoting IEEE Standards Board liaisons:Satish K. AggarwalAlan

18、H. CooksonChester C. TaylorRochelle L. SternIEEE Standards Project EditorRickard BentingerStan BonnesenChrysanthos ChrysanthouBarry EpsteinC.A. Francis, IIRobert FriedAllan F. HollandJoe L. KoepfingerEd H. Marrow, Jr.Albert A. MartinKurt A. MeindorferGeorge TempletonChrys ChrysanthouDavid W. Hutchin

19、sDavid W. JacksonWilhelm KappJoseph L. KoepfingerFrancois D. MartzloffRichard OdenbergJoseph C. OsterhoutEdgar R. TaylorArnold VitolsJ. W. WilsonDonald M. WordenGilles A. BarilClyde R. CampJoseph A. CannatelliStephen L. DiamondHarold E. EpsteinDonald C. FleckensteinJay Forster*Donald N. HeirmanBen C

20、. JohnsonE. G. “Al” KienerJoseph L. Koepfinger*Stephen R. LambertLawrence V. McCallL. Bruce McClungMarco W. MigliaroMary Lou PadgettJohn W. PopeJose R. RamosArthur K. ReillyRonald H. ReimerGary S. RobinsonIngo RschJohn S. RyanChee Kiow TanLeonard L. TrippHoward L. WolfmanviContents1. Overview 11.1 S

21、cope 11.2 Tests . 11.3 Applicability and device function 12. Definitions of rated and other parameters 22.1 Rated parameter values 22.2 Definitions 22.3 Additional definitions 32.4 Temperature dependence of parameters 42.5 Gated thyristor surge protection device (SPD) 53. Service condition . 103.1 N

22、ormal service conditions . 103.2 Unusual service conditions 114. Standard design test procedure 114.1 Standard design test criteria. 114.2 Statistical analysis 124.3 Thyristor surge protection device (SPD) test conditions . 124.4 Rating test procedures 134.5 Characteristic test procedures 185. Failu

23、re modes. 435.1 Degradation failure mode 435.2 Catastrophic failure mode 435.3 “Fail-safe” operation 44Annex A (informative) Thyristor terms. 45A.1 Definitions 45A.2 General terms. 48Annex B (informative) Bibliography. 501IEEE Standard Test Specification for Thyristor Diode Surge Protective Devices1

24、. Overview1.1 ScopeThis standard applies to two or three terminal, four or five layer, thyristor surge protection devices (SPDs)for application on systems with voltages equal to or less than 1000 V rms or 1200 V dc. These protectivedevices are designed to limit voltage surges on communication circui

25、ts and on power circuits operating fromdirect current (dc) to 420 Hz. The thyristor SPD can be manufactured with unidirectional or bidirectional,symmetrical, or asymmetrical V-I characteristics. This standard contains definitions, service conditions, anda series of test criteria for determining the

26、characteristics of a thyristor SPD. If the characteristics differ withthe direction of conduction, each polarity shall be separately specified.1.2 TestsThe tests in this standard are intended as design tests as defined in B31and provide a means of comparisonamong various thyristor SPDs.NOTEThree ter

27、minal devices may consist of multiple thyristor elements, or thyristor and diode elements, in one pack-age; or the third may connect to the gate of a thyristor.1.3 Applicability and device functionThyristor SPDs are designed to conduct the surge currents necessary to provide overvoltage protection i

28、nelectrical circuits. The purpose of this document is to provide definitions and test methods for thyristor SPDthat are used for the protection of telecommunications systems. Overvoltage threats originate from lightningand ac power lines. These threats appear in the system through induction or direc

29、t contact. The waveformsthat are used in the tests are chosen to allow confirmation of manufacturers data.1The numbers in brackets correspond to those publications listed in the bibliography, Annex B.IEEEStd C62.37-1996 IEEE STANDARD TEST SPECIFICATION FOR 2Other types of thyristors may exhibit simi

30、lar characteristics. If they are used as thyristor SPDs, their surgesuppression capabilities may be characterized according to this specification.The thyristor SPDs exhibit a relatively high impedance in the off-state condition at normal system operatingvoltages before and after the surge. During th

31、e surge of sufficient voltage and current, the device will switchto a low-impedance (on-state) condition. After the surge has passed, the device is expected to recover to ahigh-impedance (off-state) condition. Consideration should be given to service conditions, temperatures, anddevice mounting when

32、 applying these parameters as variations may occur.2. Definitions of rated and other parameters2.1 Rated parameter valuesFor the purpose of this standard, the values of rated parameters are established by the manufacturer,according to statistical acceptance criteria as indicated in 4.2.2.2 Definitio

33、nsThe following apply specifically to thyristor SPDs and do not necessarily cover other devices. If the voltam-pere characteristics are asymmetrical, then the parameters shall be defined for each polarity.The relation between some common terms on some typical device V-I graphs are illustrated in Fig

34、ures 17.The characteristics of devices in the breakdown region can be complex and difficult to measure. All thepoints shown on the graphs may not be apparent on the actual device characteristic, and there maybe additional inflection points not shown. Conceptually, all of the points will exist for ev

35、ery device, althoughpoints such as switching (Vs, Is) and breakover V(BO), I(BO)may be nearly coincidental.Device specifications should only describe the relevant characteristics. For the method of defining impulsewaveforms, see Figure 7 of B2. The minimum data that a manufacturer shall supply are t

36、hose parameterslisted in 2.2.1 through 2.2.13.2.2.1 breakover current (I(BO):The instantaneous current flowing at the breakover voltage. (See 4.5.4 andFigures 17.)2.2.2 breakover voltage (V(BO):The maximum voltage across the device in or at the breakdown regionmeasured under specified voltage rate o

37、f rise and current rate of rise. (See 4.5.4 and Figures 17). 2.2.3 holding current (IH):The minimum current required to maintain the device in the on-state.(See 4.5.6and Figures 17.)2.2.4 non-repetitive peak on-state current (ITSM):Rated maximum (peak) value of ac power frequencyon-state surge curre

38、nt of specified wave shape and frequency which may be applied for a specified time ornumber of ac cycles. (See 4.4.3 and Figures 17.)2.2.5 non-repetitive peak pulse current (IPPS):Rated maximum value of peak impulse pulse current ofspecified amplitude and wave shape that may be applied. (See 4.4.4 a

39、nd Figures 17.)2.2.6 off-state capacitance (CO):The capacitance in the off-state measured at specified frequency, f,amplitude, Vd, and dc bias, VD. (See 4.5.7.)2.2.7 off-state current (ID):The dc value of current that results from the application of the off-state voltage.(See 4.5.1 and Figures 17.)I

40、EEETHYRISTOR DIODE SURGE PROTECTIVE DEVICES Std C62.37-199632.2.8 off-state voltage (VD):The dc voltage when the device is in the off-state. (See 4.5.1 and Figures 17.)2.2.9 on-state current (IT):The current through the device in the on-state condition. (See 4.5.5 andFigures 17.)2.2.10 on-state volt

41、age (VT):The voltage across the device in the on-state condition at a specified current.(See 4.5.5 and Figures 17.) 2.2.11 repetitive peak off-state current(IDRM):The maximum (peak) value of off-state current that resultsfrom the application of the repetitive peak off-state voltage. (See 4.5.2 and F

42、igures 16.)2.2.12 repetitive peak off-state voltage (VDRM):Rated maximum (peak) continuous voltage that may beapplied in the off-state conditions including all dc and repetitive alternating voltage components. (See 4.4.1and Figures 16.)2.2.13 repetitive peak on-state current (ITRM):Rated maximum (pe

43、ak) value of ac power frequency on-state current of specified wave shape and frequency which may be applied continuously. (See 4.4.2 andFigures 17.)2.3 Additional definitionsFor certain applications some of the following terms may be necessary or useful. Listed also are thoseparameters specific to c

44、ertain thyristor SPD technologies.2.3.1 breakdown current(I(BR):The current through the device in the breakdown region. (See 4.5.8 andFigures 13.)2.3.2 breakdown voltage (V(BR):The voltage across the device in the breakdown region (prior to theswitching point) at a specified breakdown current, I(BR)

45、. (See 4.5.8 and Figures 13.)2.3.3 critical rate of rise of off-state voltage (dv/dt):The maximum rate of rise of voltage (below VDRM)that will not cause switching from the off-state to the on-state. (See 4.5.12.)2.3.4 critical rate of rise of on-state current (di/dt): Rated value of the rate of ris

46、e of current which thedevice can withstand without damage. (See 4.4.8.)2.3.5 forward current (IF):The current through the device in the forward conducting state. (See 4.5.10 andFigures 3 and 6.)2.3.6 forward voltage(VF):The voltage across the device in the forward conducting state at a specifiedcurr

47、ent IF. (See 4.5.10 and Figures 3 and 6.)2.3.7 impulse reset time(t(Reset):The time taken for a device to switch back into the off-state, in thepresence of a specified value of dc short-circuit current, after being switched into the on state by a specifiedimpulse. (See 4.5.13.)IEEEStd C62.37-1996 IE

48、EE STANDARD TEST SPECIFICATION FOR 42.3.8 insulation resistance: The equivalent insulation resistance of the device, computed by(See 4.5.1.)2.3.9 lifetime rated pulse currents:Rated values of the peak impulse current, IPP, as a function of thenumber of pulses and wave shape, which may be applied ove

49、r the device rated lifetime. (See 4.4.3 and4.4.4.)2.3.10 non-repetitive peak forward current (IFSM):Rated maximum (peak) value of ac power frequencyforward surge current of specified wave shape and frequency which may be applied for a specified time ornumber of ac cycles. (See 4.4.6 and Figures 3 and 6.)2.3.11 peak pulse impulse current (IPPM):Rated maximum value of peak impulse pulse current (IPP)applied for 10 pulses with 10 1000 s waveform and maximum duty factor of 0.01% without causingfailure. Refer to B6. (See 4.4.4.)2.3.12 peak forward recovery voltage (