IEC 60747-8-3-1995 Semiconductor devices - Discrete devices - Part 8 Field-effect transistors - Section 3 Blank detail specification for case-rated field-effect.pdf

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1、NORME INTERNATIONALE INTERNATIONAL STANDARD CE1 IEC 747-8-3 QC 7501 14 Premire dition First edition 1995-04 Dispositifs semiconducteurs - Dispositifs discrets - Partie 8: Transistors effet de champ - Section 3: Spcification particulire cadre pour les transistors effet de champ, temprature de botier

2、spcifie, pour applications en commutation Semiconductor devices - Discrete devices - Part 8: Field-effect transistors - Section 3: Blank detail specification for case-rated field-effect transistors for switch i ng applications Numro de rfrence Reference number CEIAEC 747-8-3: 1995 Copyright Internat

3、ional Electrotechnical Commission Provided by IHS under license with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-Numros des publications Depuis le ler janvier 1997, les publications de la CE1 sont numrotes partir de 60000. Publications consolides Les version

4、s consolides de certaines publications de la CE1 incorporant les amendements sont disponibles. Par exemple, les numros ddition 1.0, 1.1 et 1.2 indiquent respectivement la publication de base, la publication de base incorporant lamendement 1, et la publication de base incorporant les amendements 1 et

5、 2. Validit de la prsente publication Le contenu technique des publications de la CE1 est constamment revu par la CE1 afin quil reflte ltat actuel de la technique. Des renseignements relatifs la date de reconfirmation de la publication sont disponibles dans le Catalogue de la CEI. Les renseignements

6、 relatifs des questions ltude et des travaux en cours entrepris par le comit technique qui a tabli cette publication, ainsi que la liste des publications tablies, se trouvent dans les documents ci- dessous: Site web de la CEI* Catalogue des publications de la CE1 Publi annuellement et mis jour rguli

7、rement (Catalogue en ligne)* Disponible la fois au , sur la page de titre. Num bering As from 1 January 1997 all IEC publications are issued with a designation in the 60000 series. Consolidated publications Consolidated versions of some IEC publications including amendments are available. For exampl

8、e, edition numbers 1.0, 1.1 and 1.2 refer, respectively, to the base publication, the base publication incorporating amendment 1 and the base publication incorporating amendments 1 and 2. Validity of this publication The technical content of IEC publications is kept under constant review by the IEC,

9、 thus ensuring that the content reflects current technology. Information relating to the date of the reconfirmation of the publication is available in the IEC catalogue. Information on the subjects under consideration and work in progress undertaken by the technical committee which has prepared this

10、 publication, as well as the list of publications issued, is to be found at the following IEC sources: IEC web site* , Catalogue of IEC publications Published yearly with regular updates (On-line catalogue)* Available both at the IEC web site* and as a printed periodical IEC Bulletin Terminology, gr

11、aphical and letter symbols For general terminology, readers are referred to I EC 60050: International Electrotechnical Vocabulary (IEV). For graphical symbols, and letter symbols and signs approved by the IEC for general use, readers are referred to publications IEC 60027: Letter symbols to be used

12、in electrical technology, I EC 6041 7: Graphical symbols for use on equipment. Index, survey and compilation of the single sheets and IEC 60617: Graphical symbols for diagrams. * See web site address on title page. Copyright International Electrotechnical Commission Provided by IHS under license wit

13、h IECNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-NORME INTERNATIONALE INTERNATIONAL STANDARD CE1 IEC 747-8-3 QC 7501 14 Premire dition First edition 1995-04 Dispositifs semiconducteurs - Dispositifs discrets - Partie 8: Transistors effet de champ - Section 3: S

14、pcification particulire cadre pour les transistors effet de champ, temprature de botier spcifie, pour applications en commutation Semiconductor devices - Discrete devices - Part 8: Field-effect transistors - Section 3: Blank detail specification for case-rated field-effect transistors for switching

15、applications 0 CE1 1995 Droits de reproduction rservs - Copyright - all rights reserved Aucune parim de cette publication ne peut etre reproduite ni utilise sous quelque tom que ce soit et par aucun pro- any IEC National Committee interested in the subject dealt with may participate in this preparat

16、ory work. International, governmental and non-governmental organizations liaising with the IEC also participate in this preparation. The IEC collaborates closely with the International Organization for Standardization (ISO) in accordance with conditions determined by agreement between the two organi

17、zations. 2) The formal decisions or agreements of the IEC on technical matters, prepared by technical committees on which all the National Committees having a special interest therein are represented, express, as nearly as possible, an international consensus of opinion on the subjects dealt with. 3

18、) They have the form of recommendations for international use published in the form of standards, technical reports or guides and they are accepted by the National Committees in that sense. 4) In order to promote international unification, IEC National Committees undertake to apply IEC International

19、 Standards transparently to the maximum extent possible in their national and regional standards. Any divergence between the IEC Standard and the corresponding national or regional standard shall be clearly indicated in the latter. 5) The IEC provides no marking procedure to indicate its approval an

20、d cannot be rendered responsible for any equipment declared to be in conformity with one of its standards. International Standard IEC 747-8-3 has been prepared by sub-committee 47E: Discrete semiconductor devices, of IEC technical committee 47: Semiconductor devices. The text of this standard is bas

21、ed on the following documents: Full information on the voting for the approval of this standard can be found in the report on voting indicated in the above table. The QC number that appears on the front cover of this publication is the specification number in the IEC Quality Assessment System for El

22、ectronic Components (IECQ). Copyright International Electrotechnical Commission Provided by IHS under license with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-747-8-3 o cEi:I 995 -4- La CE1 747 comprend les parties suivantes, prsentes sous le titre gnral: Di

23、spositifs a semiconducteurs - Dispositifs discrets. Premire partie: 1983, Gnralits Deuxime partie: 1983, Diodes de redressement Troisime partie: 1985, Diodes de signal (y compris les diodes de commutation) et diodes rgulatrices Quatrime partie: 1991, Diodes et transistors hyperfrquences Cinquime par

24、tie: 1992, Dispositifs optoectroniques Sixime partie : 1983, Thyristors Septime partie: 1988, Transistors bipolaires Huitime partie: 1984, Transistors A effet de champ Dixime partie: 1991, Spcification gnrique pour les dispositifs discrets et /es circuits intgrs Onzime partie: 1985, Spcification int

25、ermdiaire pour les dispositifs discrets Deuxime partie: 1991, Spcification intermdiaire pour /es dispositifs optolec froniques Autres publications de la CE1 cites dans la prsente norme: CE1 68-2-17: 1978, CE1 191-2: CEI 747-8-1: 1987, CE1 747-10: 1991. CE1 747-11: 1985, CEI 749: 1984. Essais denviro

26、nnement - Deuxime partie: Essais - Essai O: Etanchit Normalisation mcanique des dispositifs semiconducteurs - Deuxime partie: Dimensions (supplments) Dispositifs semiconducteurs - Dispositifs discrets et circuits intgrs - Deuxime partie: Diodes de redressement Dispositifs semiconducteurs - Dispositi

27、fs discrets et circuits intgrs - Huitime partie: Transistors effet de champ - Section 1: Spcification particulire cadre pour les transistors a effet de champ a grille unique, jusqu 5 Wet 1 GHz Dispositifs semiconducteurs - Dispositifs discrets et circuits intgrs - Dixime partie: Spcification gnrique

28、 pour les dispositifs discrets et les circuits intgrs Dispositifs semiconducteurs - Dispositifs discrets et circuits intgrs - Onzime partie. Spcification intermdiaire pour les dispositifs discrets Amendement l(l991) Dispositifs semiconducteurs - Essais mcaniques et climatiques Amendement l(l991) Ame

29、ndement 2 (1993) Copyright International Electrotechnical Commission Provided by IHS under license with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-747-8-3 O IEC:l995 -5- IEC 747 consists of the following parts, under the general title: Semiconductor devices

30、 - Discrete devices. - Part 1 : 1983, General - Part 2: 1983, Rectifier diodes - Part 3: 1985, Signal (including switching) and regulator diodes - Part 4: 1991, Microwave diodes and transistors - Part 5: 1992, Optoelectronic devices - Part 6: 1983, Thyristors - Part 7: 1988, Bipolar transistors - Pa

31、rt 8: 1984, Field-effect transistors - Part 1 O: 1991, Generic specification for discrete devices and integrated circuits - Part 1 1 : i 985, Sectional specification for discrete devices - Part 12: 1991 , Sectional specification for optoelectronic devices Other IEC publications quoted in this standa

32、rd: IEC 68-2-17: 1978, Basic environmental testing procedure - Part 2: Tests - Test O: Sealing IEC 191 -2: Mechanical standardization of semiconductor devices and integrated circuits - Part 2: Dimensions (supplements) IEC 747-2: 1983, Semiconductor devices - Discrete devices and integrated circuits

33、- Part 2: Rectifier diodes IEC 747-8-1 : 1987, Semiconductor devices - Discrete devices and integrated circuits - Part 8: Field-effect transistors - Section 7: Blank detail specification for single-gate field-effect transistors up to 5 Wand 1 GHz IEC 747-10 1991. Semiconductor devices - Discrete dev

34、ices and integrated circuits - Part 10: Generic specification for discrete devices and integrated circuits IEC 747-1 1: 1985, Semiconductor devices - Discrete devices and integrated circuits - Part 11: Sectional specification for discrete devices Amendment 1 (1991) Semiconductor devices - Mechanical

35、 and climatic test methods Amendment l(l991) Amendment 2 (1993) IEC 749: 1984, Copyright International Electrotechnical Commission Provided by IHS under license with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-747-8-3 O CEI:1995 -6- DISPOSITIFS SEMICONDUCTEU

36、RS - Dispositifs discrets - Partie 8: Transistors effet de champ - Section 3: Spcification particulire cadre pour les transistors effet de champ, temprature de botier spcifie, pour applications en commutation INTRODUCTION Le systme CE1 dassurance de la qualit des composants lectroniques fonctionne c

37、onformment aux statuts de la CE1 et sous son autorit. Le but de ce systme est de dfinir les procdures dassurance de la qualit de telle faon que les composants lec- troniques livrs par un pays participant comme tant conformes aux exigences dune spcification applicable soient galement acceptables dans

38、 les autres pays participants sans ncessiter dautres essais. Cette spcification particulire cadre fait partie dune srie de spcifications particulires cadres concernant les dispositifs semiconducteurs; elle doit tre utilise avec les publications suivantes de la CEI: 747-1 O/QC 700000 (1 991): Disposi

39、tifs semiconducteurs - Dispositifs discrets - Dixime partie: Spcification gnrique pour les dispositifs discrets et les circuits intgrs. 747-1 1/QC 7501 O0 (1 985): Dispositifs a semiconducteurs - Dispositifs discrets - Onzime partie: Spcification intermdiaire pour les dispositifs discrets. Renseigne

40、ments ncessaires Les nombres placs entre crochets sur cette page et les pages suivantes correspondent aux indications suivantes qui doivent tre portes dans les cases prvues cet effet. Identification de la spcification particulire l Nom de lorganisme national de normalisation sous lautorit duquel la

41、spcification particulire est tablie. 2 Numro IECQ de la spcification particulire. 3 Numros de rfrence et ddition des spcifications gnrique et intermdiaire. 4 Numro national de la spcification particulire, date ddition et toute autre information requise par le systme national. Identification du compo

42、sant 5 Type de composant. 161 Renseignements sur la construction et les applications typiques. Si un dispositif peut avoir plusieurs applications, cela doit tre indiqu dans la spcification particulire. Les caractristiques, les limites et les exigences de contrle relatives a ces appli- cations doiven

43、t tre respectes. Copyright International Electrotechnical Commission Provided by IHS under license with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-747-8-3 O I EC :I 995 -7- SEMICONDUCTOR DEVICES - Discrete devices - Part 8: Field-effect transistors - Sectio

44、n 3: Blank detail specification for case-rated field-effect transistors for switch i n g a p pi i cat i ons INTRODUCTION The IEC quality assessment system for electronic components is operated in accordance with the statutes of the IEC and under the authority of the IEC. The object of this system is

45、 to define quality assessment procedures in such a manner that electronic components released by one participating country as conforming with the requirements of an applicable specification are equally acceptable in all other participating countries without the need for further testing. This blank d

46、etail specification is one of a series of blank detail specifications for semi- conductor devices and shall be used with the following IEC publications: 747-1O/QC 700000 (1991): Semiconductor devices - Discrete devices - Part 10: Generic specification for discrete devices and integrated circuits. 74

47、7-1 1iQC 7501 O0 (1985): Semiconductor devices - Discrete devices - Part 1 I: Sectional specification for discrete devices. Required information Numbers shown in brackets on this and the following page correspond to the following items of required information, which should be entered in the spaces p

48、rovided. Identification of the detail specification I 2 3 4 The name of the national standards organization under whose authority the detail specification is issued. The IECQ number of the detail specification. The numbers and issue numbers of the generic and sectional specifications. The national number of the detail specification, date of issue and any further infor- mation, if required by the national system. Identification of the component 5 Type of component SI Information on typical co