IEC 60747-4-2007 Semiconductor devices - Discrete devices - Part 4 Microwave diodes and transistors《半导体装置.分立装置.第4部分 微波二极管和晶体管》.pdf

《IEC 60747-4-2007 Semiconductor devices - Discrete devices - Part 4 Microwave diodes and transistors《半导体装置.分立装置.第4部分 微波二极管和晶体管》.pdf》由会员分享，可在线阅读，更多相关《IEC 60747-4-2007 Semiconductor devices - Discrete devices - Part 4 Microwave diodes and transistors《半导体装置.分立装置.第4部分 微波二极管和晶体管》.pdf（280页珍藏版）》请在麦多课文档分享上搜索。

1、 IEC 60747-4Edition 2.0 2007-08INTERNATIONAL STANDARD NORME INTERNATIONALESemiconductor devices Discrete devices Part 4: Microwave diodes and transistors Dispositifs semiconducteurs Dispositifs discrets Partie 4: Diodes et transistors hyperfrquences IEC60747-4:2007 THIS PUBLICATION IS COPYRIGHT PROT

2、ECTED Copyright 2007 IEC, Geneva, Switzerland All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or utilized in any form or by any means, electronic or mechanical, including photocopying and microfilm, without permission in writing from either IEC or IECs

3、member National Committee in the country of the requester. If you have any questions about IEC copyright or have an enquiry about obtaining additional rights to this publication, please contact the address below or your local IEC member National Committee for further information. Droits de reproduct

4、ion rservs. Sauf indication contraire, aucune partie de cette publication ne peut tre reproduite ni utilise sous quelque forme que ce soit et par aucun procd, lectronique ou mcanique, y compris la photocopie et les microfilms, sans laccord crit de la CEI ou du Comit national de la CEI du pays du dem

5、andeur. Si vous avez des questions sur le copyright de la CEI ou si vous dsirez obtenir des droits supplmentaires sur cette publication, utilisez les coordonnes ci-aprs ou contactez le Comit national de la CEI de votre pays de rsidence. IEC Central Office 3, rue de Varemb CH-1211 Geneva 20 Switzerla

6、nd Email: inmailiec.ch Web: www.iec.ch About the IEC The International Electrotechnical Commission (IEC) is the leading global organization that prepares and publishes International Standards for all electrical, electronic and related technologies. About IEC publications The technical content of IEC

7、 publications is kept under constant review by the IEC. Please make sure that you have the latest edition, a corrigenda or an amendment might have been published. Catalogue of IEC publications: www.iec.ch/searchpub The IEC on-line Catalogue enables you to search by a variety of criteria (reference n

8、umber, text, technical committee,). It also gives information on projects, withdrawn and replaced publications. IEC Just Published: www.iec.ch/online_news/justpub Stay up to date on all new IEC publications. Just Published details twice a month all new publications released. Available on-line and al

9、so by email. Electropedia: www.electropedia.org The worlds leading online dictionary of electronic and electrical terms containing more than 20 000 terms and definitions in English and French, with equivalent terms in additional languages. Also known as the International Electrotechnical Vocabulary

10、online. Customer Service Centre: www.iec.ch/webstore/custserv If you wish to give us your feedback on this publication or need further assistance, please visit the Customer Service Centre FAQ or contact us: Email: csciec.ch Tel.: +41 22 919 02 11 Fax: +41 22 919 03 00 A propos de la CEI La Commissio

11、n Electrotechnique Internationale (CEI) est la premire organisation mondiale qui labore et publie des normes internationales pour tout ce qui a trait llectricit, llectronique et aux technologies apparentes. A propos des publications CEI Le contenu technique des publications de la CEI est constamment

12、 revu. Veuillez vous assurer que vous possdez ldition la plus rcente, un corrigendum ou amendement peut avoir t publi. Catalogue des publications de la CEI: www.iec.ch/searchpub/cur_fut-f.htm Le Catalogue en-ligne de la CEI vous permet deffectuer des recherches en utilisant diffrents critres (numro

13、de rfrence, texte, comit dtudes,). Il donne aussi des informations sur les projets et les publications retires ou remplaces. Just Published CEI: www.iec.ch/online_news/justpub Restez inform sur les nouvelles publications de la CEI. Just Published dtaille deux fois par mois les nouvelles publications

14、 parues. Disponible en-ligne et aussi par email. Electropedia: www.electropedia.org Le premier dictionnaire en ligne au monde de termes lectroniques et lectriques. Il contient plus de 20 000 termes et dfinitions en anglais et en franais, ainsi que les termes quivalents dans les langues additionnelle

15、s. Egalement appel Vocabulaire Electrotechnique International en ligne. Service Clients: www.iec.ch/webstore/custserv/custserv_entry-f.htm Si vous dsirez nous donner des commentaires sur cette publication ou si vous avez des questions, visitez le FAQ du Service clients ou contactez-nous: Email: csci

16、ec.ch Tl.: +41 22 919 02 11 Fax: +41 22 919 03 00 IEC 60747-4Edition 2.0 2007-08INTERNATIONAL STANDARD NORME INTERNATIONALESemiconductor devices Discrete devices Part 4: Microwave diodes and transistors Dispositifs semiconducteurs Dispositifs discrets Partie 4: Diodes et transistors hyperfrquences I

17、NTERNATIONAL ELECTROTECHNICAL COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATIONALE XFICS 31.080.10 / 31.080.30 PRICE CODECODE PRIXISBN 2-8318-9262-7 2 60747-4 IEC:2007 CONTENTS FOREWORD.6 1 Scope.8 2 Normative references .8 3 Variable capacitance, snap-off diodes and fast-switching schottky diodes

18、8 3.1 Variable capacitance diodes8 3.1.1 General .8 3.1.2 Terminology and letter symbols .9 3.1.3 Essential ratings and characteristics9 3.1.4 Measuring methods .12 3.2 Snap-off diodes, Schottky diodes 39 3.2.1 General .39 3.2.2 Terminology and letter symbols .39 3.2.3 Essential ratings and characte

19、ristics39 3.2.4 Measuring methods .41 4 Mixer diodes and detector diodes .48 4.1 Mixer diodes used in radar applications.48 4.1.1 General .48 4.1.2 Terminology and letter symbols .48 4.1.3 Essential ratings and characteristics48 4.1.4 Measuring methods .50 4.2 Mixer diodes used in communication appl

20、ications69 4.2.1 General .69 4.2.2 Terminology and letter symbols .69 4.2.3 Essential ratings and characteristics69 4.2.4 Measuring methods .71 4.3 Detector diodes .71 5 Impatt diodes71 5.1 Impatt diodes amplifiers 71 5.1.1 General .71 5.1.2 Terms and definitions 71 5.1.3 Essential ratings and chara

21、cteristics74 5.2 Impatt diodes oscillators77 6 Gunn diodes.77 6.1 General .77 6.2 Terms and definitions 78 6.3 Essential ratings and characteristics .78 6.4 Measuring methods .78 6.4.1 Pulse breakdown voltage.78 6.4.2 Threshold voltage79 6.4.3 Resistance 80 7 Bipolar transistors 81 7.1 General .81 7

22、.2 Terms and definitions 81 7.3 Essential ratings and characteristics .84 60747-4 IEC:2007 3 7.3.1 General .84 7.3.2 Limiting values (absolute maximum rating system) 84 7.4 Measuring methods .87 7.4.1 General .87 7.4.2 DC characteristics .89 7.4.3 RF characteristics89 7.5 Verifying methods .103 7.5.

23、1 Load mismatch tolerance (L) .103 7.5.2 Source mismatch tolerance (S)107 7.5.3 Load mismatch ruggedness (R) .111 8 Field-effect transistors112 8.1 General .112 8.2 Terms and definitions 112 8.3 Essential ratings and characteristics .115 8.3.1 General .115 8.3.2 Limiting values (absolute maximum rat

24、ing system) 116 8.4 Measuring methods .117 8.4.1 General .117 8.4.2 DC characteristics .118 8.4.3 RF characteristics124 8.5 Verifying methods .135 8.5.1 Load mismatch tolerance (L).135 8.5.2 Source mismatch tolerance (S) .135 8.5.3 Load mismatch ruggedness (R).135 9 Assessment and reliability specif

25、ic requirements .135 9.1 Electrical test conditions135 9.2 Failure criteria and failure-defining characteristics for acceptance tests 135 9.3 Failure criteria and failure-defining characteristics for reliability tests 135 9.4 Procedure in case of a testing error.135 Figure 1 Equivalent circuit12 Fig

26、ure 2 Circuit for the measurement of reverse current IR.12 Figure 3 Circuit for the measurement of forward voltage VF.13 Figure 4 Circuit for the measurement of capacitance Ctot.14 Figure 5 Circuit for the measurement of effective quality factor 15 Figure 6 Circuit for the measurement of series indu

27、ctance .17 Figure 7 Circuit for the measurement of thermal resistance Rth18 Figure 8 Circuit for the measurement of transient thermal impedance Zth.19 Figure 9 Waveguide mounting21 Figure 10 Equivalent circuit of mounted diode21 Figure 11 Block diagram of transmission loss measurement circuit 22 Fig

28、ure 12 Curve indicating transmitted power versus frequency.24 Figure 13 Example of cavity.26 Figure 14 Block diagram for the measurement of effective Q in cavity method .28 4 60747-4 IEC:2007 Figure 15 Block diagram of transformed impedance measurement circuit.35 Figure 16 Example of plot of diode i

29、mpedance as a function of bias.36 Figure 17 Modified Smith Chart indicating constant Q and constant R circles.38 Figure 18 Transition time tt39 Figure 19 Circuit for the measurement of transition time (tt).41 Figure 20 The time interval (tt1) .43 Figure 21 Circuit for the measurement of reverse reco

30、very time.43 Figure 22 The reverse recovery time trr44 Figure 23 Circuit for the measurement of the excess carrier effective lifetime 45 Figure 24 Circuit for the measurement of the excess carrier effective lifetime 46 Figure 25 the ratio of iprto ipf.47 Figure 26 Circuit for the measurement of forw

31、ard current (IF).50 Figure 27 Circuit for the measurement of rectified current (I0)51 Figure 28 Circuit for the measurement of intermediate frequency impedance (Zif) in the method 1.52 Figure 29 Circuit for the measurement of intermediate frequency impedance (Zif) in the method 2.53 Figure 30 Circui

32、t for the measurement of voltage standing wave ratio55 Figure 31 Circuit for the measurement of overall noise factor.57 Figure 32 Circuit for the measurement of output noise ratio .61 Figure 33 Circuit for the measurement of conversion loss in dc incremental method 63 Figure 34 Circuit for the measu

33、rement of conversion loss in amplitude modulation method .64 Figure 35 Block diagram of burnout energy measurement circuit65 Figure 36 Circuit for the measurement of pulse breakdown voltage78 Figure 37 Circuit for the measurement of threshold voltage79 Figure 38 Circuit for the measurement of resist

34、ance in voltmeter-ammeter method80 Figure 39 Circuit for the measurement of resistance in alternative method.81 Figure 40 Circuit for the measurement of scattering parameters 91 Figure 41 Incident and reflected waves in a two-port network 92 Figure 42 Circuit for the measurements of two-tone intermo

35、dulation distortion .98 Figure 43 Example of third order intermodulation products indicated by the spectrum analyser100 Figure 44 Typical intermodulation products output power characteristic .102 Figure 45 Circuit for the verification of load mismatch tolerance in the method 1104 Figure 46 Circuit f

36、or the verification of load mismatch tolerance in the method 2106 Figure 47 Circuit for the verification of source mismatch tolerance in the method 1.108 60747-4 IEC:2007 5 Figure 48 Circuit for the verification of source mismatch tolerance in the method 2.110 Figure 49 Circuit for the verification

37、of load mismatch ruggedness.111 Figure 50 Circuit for the measurements of gate-source breakdown voltage, V(BR)GSO119 Figure 51 Circuit for the measurements of gate-drain breakdown voltage, V(BR)GDO119 Figure 52 Circuit for the measurement of thermal resistance, channel-to-case.120 Figure 53 Timing c

38、hart of DC pulse to be supplied to the device being measured 122 Figure 54 Calibration curve VGSF= f(Tch) for fixed IG(ref), evaluation of 123 Figure 55 VGSF2in function of delay time 4.124 Figure 56 Circuit for the measurement of output power at specified input power 125 Figure 57 Circuit for the m

39、easurements of the noise figure and associated gain.130 Table 1 Electrical limiting values84 Table 2 DC characteristics .85 Table 3 RF characteristics .86 Table 4 Replacing rule for terms 87 Table 5 Replacing rule for symbols in the case of constant base current88 Table 6 Replacing rule for symbols

40、in the case of constant base voltage .88 Table 7 Electrical limiting values116 Table 8 DC characteristics .116 Table 9 RF characteristics .117 Table 10 Replacing rules for terms.118 Table 11 Replacing rules for symbols.118 Table 12 Operating conditions and Test circuits.136 Table 13 Failure criteria

41、 and measurement conditions .138 6 60747-4 IEC:2007 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR DEVICES DISCRETE DEVICES Part 4: Microwave diodes and transistors FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising a

42、ll national electrotechnical committees (IEC National Committees). The object of IEC is to promote international co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and in addition to other activities, IEC publishes International Standards, T

43、echnical Specifications, Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt with may participate in this preparatory

44、work. International, governmental and non-governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely with the International Organization for Standardization (ISO) in accordance with conditions determined by agreement between the two organizations.

45、 2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international consensus of opinion on the relevant subjects since each technical committee has representation from all interested IEC National Committees. 3) IEC Publications have the form of recomm

46、endations for international use and are accepted by IEC National Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any misinterpretation by any

47、 end user. 4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications transparently to the maximum extent possible in their national and regional publications. Any divergence between any IEC Publication and the corresponding national or regional publ

48、ication shall be clearly indicated in the latter. 5) IEC provides no marking procedure to indicate its approval and cannot be rendered responsible for any equipment declared to be in conformity with an IEC Publication. 6) All users should ensure that they have the latest edition of this publication. 7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and members of its technical committees and IEC National Committees for any personal injury, property damage or other damage of any nature whatsoever, whether direct or indirect