1、 IEC 60747-4Edition 2.0 2007-08INTERNATIONAL STANDARD NORME INTERNATIONALESemiconductor devices Discrete devices Part 4: Microwave diodes and transistors Dispositifs semiconducteurs Dispositifs discrets Partie 4: Diodes et transistors hyperfrquences IEC60747-4:2007 THIS PUBLICATION IS COPYRIGHT PROT
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16、ec.ch Tl.: +41 22 919 02 11 Fax: +41 22 919 03 00 IEC 60747-4Edition 2.0 2007-08INTERNATIONAL STANDARD NORME INTERNATIONALESemiconductor devices Discrete devices Part 4: Microwave diodes and transistors Dispositifs semiconducteurs Dispositifs discrets Partie 4: Diodes et transistors hyperfrquences I
17、NTERNATIONAL ELECTROTECHNICAL COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATIONALE XFICS 31.080.10 / 31.080.30 PRICE CODECODE PRIXISBN 2-8318-9262-7 2 60747-4 IEC:2007 CONTENTS FOREWORD.6 1 Scope.8 2 Normative references .8 3 Variable capacitance, snap-off diodes and fast-switching schottky diodes
18、8 3.1 Variable capacitance diodes8 3.1.1 General .8 3.1.2 Terminology and letter symbols .9 3.1.3 Essential ratings and characteristics9 3.1.4 Measuring methods .12 3.2 Snap-off diodes, Schottky diodes 39 3.2.1 General .39 3.2.2 Terminology and letter symbols .39 3.2.3 Essential ratings and characte
19、ristics39 3.2.4 Measuring methods .41 4 Mixer diodes and detector diodes .48 4.1 Mixer diodes used in radar applications.48 4.1.1 General .48 4.1.2 Terminology and letter symbols .48 4.1.3 Essential ratings and characteristics48 4.1.4 Measuring methods .50 4.2 Mixer diodes used in communication appl
20、ications69 4.2.1 General .69 4.2.2 Terminology and letter symbols .69 4.2.3 Essential ratings and characteristics69 4.2.4 Measuring methods .71 4.3 Detector diodes .71 5 Impatt diodes71 5.1 Impatt diodes amplifiers 71 5.1.1 General .71 5.1.2 Terms and definitions 71 5.1.3 Essential ratings and chara
21、cteristics74 5.2 Impatt diodes oscillators77 6 Gunn diodes.77 6.1 General .77 6.2 Terms and definitions 78 6.3 Essential ratings and characteristics .78 6.4 Measuring methods .78 6.4.1 Pulse breakdown voltage.78 6.4.2 Threshold voltage79 6.4.3 Resistance 80 7 Bipolar transistors 81 7.1 General .81 7
22、.2 Terms and definitions 81 7.3 Essential ratings and characteristics .84 60747-4 IEC:2007 3 7.3.1 General .84 7.3.2 Limiting values (absolute maximum rating system) 84 7.4 Measuring methods .87 7.4.1 General .87 7.4.2 DC characteristics .89 7.4.3 RF characteristics89 7.5 Verifying methods .103 7.5.
23、1 Load mismatch tolerance (L) .103 7.5.2 Source mismatch tolerance (S)107 7.5.3 Load mismatch ruggedness (R) .111 8 Field-effect transistors112 8.1 General .112 8.2 Terms and definitions 112 8.3 Essential ratings and characteristics .115 8.3.1 General .115 8.3.2 Limiting values (absolute maximum rat
24、ing system) 116 8.4 Measuring methods .117 8.4.1 General .117 8.4.2 DC characteristics .118 8.4.3 RF characteristics124 8.5 Verifying methods .135 8.5.1 Load mismatch tolerance (L).135 8.5.2 Source mismatch tolerance (S) .135 8.5.3 Load mismatch ruggedness (R).135 9 Assessment and reliability specif
25、ic requirements .135 9.1 Electrical test conditions135 9.2 Failure criteria and failure-defining characteristics for acceptance tests 135 9.3 Failure criteria and failure-defining characteristics for reliability tests 135 9.4 Procedure in case of a testing error.135 Figure 1 Equivalent circuit12 Fig
26、ure 2 Circuit for the measurement of reverse current IR.12 Figure 3 Circuit for the measurement of forward voltage VF.13 Figure 4 Circuit for the measurement of capacitance Ctot.14 Figure 5 Circuit for the measurement of effective quality factor 15 Figure 6 Circuit for the measurement of series indu
27、ctance .17 Figure 7 Circuit for the measurement of thermal resistance Rth18 Figure 8 Circuit for the measurement of transient thermal impedance Zth.19 Figure 9 Waveguide mounting21 Figure 10 Equivalent circuit of mounted diode21 Figure 11 Block diagram of transmission loss measurement circuit 22 Fig
28、ure 12 Curve indicating transmitted power versus frequency.24 Figure 13 Example of cavity.26 Figure 14 Block diagram for the measurement of effective Q in cavity method .28 4 60747-4 IEC:2007 Figure 15 Block diagram of transformed impedance measurement circuit.35 Figure 16 Example of plot of diode i
29、mpedance as a function of bias.36 Figure 17 Modified Smith Chart indicating constant Q and constant R circles.38 Figure 18 Transition time tt39 Figure 19 Circuit for the measurement of transition time (tt).41 Figure 20 The time interval (tt1) .43 Figure 21 Circuit for the measurement of reverse reco
30、very time.43 Figure 22 The reverse recovery time trr44 Figure 23 Circuit for the measurement of the excess carrier effective lifetime 45 Figure 24 Circuit for the measurement of the excess carrier effective lifetime 46 Figure 25 the ratio of iprto ipf.47 Figure 26 Circuit for the measurement of forw
31、ard current (IF).50 Figure 27 Circuit for the measurement of rectified current (I0)51 Figure 28 Circuit for the measurement of intermediate frequency impedance (Zif) in the method 1.52 Figure 29 Circuit for the measurement of intermediate frequency impedance (Zif) in the method 2.53 Figure 30 Circui
32、t for the measurement of voltage standing wave ratio55 Figure 31 Circuit for the measurement of overall noise factor.57 Figure 32 Circuit for the measurement of output noise ratio .61 Figure 33 Circuit for the measurement of conversion loss in dc incremental method 63 Figure 34 Circuit for the measu
33、rement of conversion loss in amplitude modulation method .64 Figure 35 Block diagram of burnout energy measurement circuit65 Figure 36 Circuit for the measurement of pulse breakdown voltage78 Figure 37 Circuit for the measurement of threshold voltage79 Figure 38 Circuit for the measurement of resist
34、ance in voltmeter-ammeter method80 Figure 39 Circuit for the measurement of resistance in alternative method.81 Figure 40 Circuit for the measurement of scattering parameters 91 Figure 41 Incident and reflected waves in a two-port network 92 Figure 42 Circuit for the measurements of two-tone intermo
35、dulation distortion .98 Figure 43 Example of third order intermodulation products indicated by the spectrum analyser100 Figure 44 Typical intermodulation products output power characteristic .102 Figure 45 Circuit for the verification of load mismatch tolerance in the method 1104 Figure 46 Circuit f
36、or the verification of load mismatch tolerance in the method 2106 Figure 47 Circuit for the verification of source mismatch tolerance in the method 1.108 60747-4 IEC:2007 5 Figure 48 Circuit for the verification of source mismatch tolerance in the method 2.110 Figure 49 Circuit for the verification
37、of load mismatch ruggedness.111 Figure 50 Circuit for the measurements of gate-source breakdown voltage, V(BR)GSO119 Figure 51 Circuit for the measurements of gate-drain breakdown voltage, V(BR)GDO119 Figure 52 Circuit for the measurement of thermal resistance, channel-to-case.120 Figure 53 Timing c
38、hart of DC pulse to be supplied to the device being measured 122 Figure 54 Calibration curve VGSF= f(Tch) for fixed IG(ref), evaluation of 123 Figure 55 VGSF2in function of delay time 4.124 Figure 56 Circuit for the measurement of output power at specified input power 125 Figure 57 Circuit for the m
39、easurements of the noise figure and associated gain.130 Table 1 Electrical limiting values84 Table 2 DC characteristics .85 Table 3 RF characteristics .86 Table 4 Replacing rule for terms 87 Table 5 Replacing rule for symbols in the case of constant base current88 Table 6 Replacing rule for symbols
40、in the case of constant base voltage .88 Table 7 Electrical limiting values116 Table 8 DC characteristics .116 Table 9 RF characteristics .117 Table 10 Replacing rules for terms.118 Table 11 Replacing rules for symbols.118 Table 12 Operating conditions and Test circuits.136 Table 13 Failure criteria
41、 and measurement conditions .138 6 60747-4 IEC:2007 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR DEVICES DISCRETE DEVICES Part 4: Microwave diodes and transistors FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising a
42、ll national electrotechnical committees (IEC National Committees). The object of IEC is to promote international co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and in addition to other activities, IEC publishes International Standards, T
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