JEDEC JESD282B 01-2002 Silicon Rectifier Diodes (Revision of EIA-JESD282-B)《硅二极管整流器 EIA-JESD282-B修订本》.pdf
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1、JEDEC STANDARD Silicon Rectifier Diodes JESD282B.01 (Minor Revisions of JESD282-B, April 2000) NOVEMBER 2002 JEDEC SOLID STATE TECHNOLOGY ASSOCIATION NOTICE JEDEC standards and publications contain material that has been prepared, reviewed, and approved through the JEDEC Board of Directors level and
2、 subsequently reviewed and approved by the EIA General Counsel. JEDEC standards and publications are designed to serve the public interest through eliminating misunderstandings between manufacturers and purchasers, facilitating interchangeability and improvement of products, and assisting the purcha
3、ser in selecting and obtaining with minimum delay the proper product for use by those other than JEDEC members, whether the standard is to be used either domestically or internationally. JEDEC standards and publications are adopted without regard to whether or not their adoption may involve patents
4、or articles, materials, or processes. By such action JEDEC does not assume any liability to any patent owner, nor does it assume any obligation whatever to parties adopting the JEDEC standards or publications. The information included in JEDEC standards and publications represents a sound approach t
5、o product specification and application, principally from the solid state device manufacturer viewpoint. Within the JEDEC organization there are procedures whereby an JEDEC standard or publication may be further processed and ultimately become an ANSI/EIA standard. No claims to be in conformance wit
6、h this standard may be made unless all requirements stated in the standard are met. Inquiries, comments, and suggestions relative to the content of this JEDEC standard or publication should be addressed to JEDEC at the address below, or call (703) 907-7559 or www.jedec.org Published by JEDEC Solid S
7、tate Technology Association 2002 2500 Wilson Boulevard Arlington, VA 22201-3834 This document may be downloaded free of charge; however JEDEC retains the copyright on this material. By downloading this file the individual agrees not to charge for or resell the resulting material. PRICE: Please refer
8、 to the current Catalog of JEDEC Engineering Standards and Publications or call Global Engineering Documents, USA and Canada 1-800-854-7179, International (303) 397-7956 Printed in the U.S.A. All rights reserved PLEASE! DONT VIOLATE THE LAW! This document is copyrighted by JEDEC and may not be repro
9、duced without permission. Organizations may obtain permission to reproduce a limited number of copies through entering into a license agreement. For information, contact: JEDEC Solid State Technology Association 2500 Wilson Boulevard Arlington, Virginia 22201-3834 or call (703) 907-7559 JEDEC Standa
10、rd No. 282B.01 -i- SILICON RECTIFIER DIODES CONTENTS Page SECTION 1: RECTIFIER DIODE DEFINITIONS AND LETTER SYMBOLS 1.1 Physical structure nomenclature 1 1.2 Semiconductor rectifier diode characteristics and rating terms 2 1.3 Terms used in describing rectifier diode circuits 5 1.4 General letter sy
11、mbols 7 1.4.1 Temperature symbols 7 1.4.2 Thermal resistance and impedance symbols 7 1.4.3 Transient and electrical symbols 7 1.5 Letter symbols subscripts 8 SECTION 2: REGISTRATION 2.1 Introduction 17 2.2 Purpose and intent 17 2.3 Brief outline of registration procedures 18 2.4 Detailed procedures
12、and rules governing registration of type designations without letter suffix 18 2.4.1 Application 18 2.4.2 Assignment 20 2.4.3 Release (public announcement) 21 2.4.4 Correction notice and re-registration 21 2.5 Detailed procedures and rules governing registration of type designations with letter suff
13、ix 23 2.6 Appeal of the Type Administrators decisions 24 2.7 Description of registration format 25 2.8 Use of JEDEC registered data 25 2.9 Test and rating methods applied to JEDEC data 26 SECTION 3: USE OF RECTIFIER DIODE REGISTRATION FORMATS 3.1 Introduction 27 3.2 General description 28 3.3 Mechan
14、ical data 28 3.4 Maximum data 29 3.4.1 Temperature 29 3.4.2 Electrical ratings 30 3.5 Electrical characteristics 33 3.5.1 Reverse blocking current 33 3.5.2 Forward voltage 33 3.5.3 Reverse recovery 33 3.6 Thermal characteristics 34 SECTION 4: RATING ESTABLISHMENT AND VERIFICATION TESTS 4.1 Introduct
15、ion and reference table 35 4.2 Electrical tests 36 4.2.1 Repetitive ratings tests 36 4.2.2 Nonrepetitive rating tests 43 JEDEC Standard No. 282B.01 -ii- SILICON RECTIFIER DIODES CONTENTS (continued) Page 4.3 Non-electrical tests 59 4.3.1 Storage life test 59 4.3.2 Lead or terminal temperature test 5
16、8 4.4 Post test measurements 60 SECTION 5: CHARACTERISTICS TESTS 5.1 Introduction and reference table 61 5.1.1 Automatic Test Equipment (ATE) 62 5.2 General guidelines 62 5.3 Types of electrical tests 63 5.3.1 Alternating current or dynamic tests 63 5.3.2 Continuous current or static tests 63 5.3.3
17、Pulse tests 63 5.4 Thermal considerations 64 5.4.1 Thermal equilibrium 64 5.4.2 Thermal monitoring 64 5.4.3 Thermal management 64 5.5 Instrumentation 65 5.5.1 Analog instruments 65 5.5.2 Digital voltmeters 66 5.5.3 Power supplies 66 5.5.4 Pulse generators 66 5.5.5 Oscilloscopes 68 5.5.6 Temperature
18、measuring instruments 59 5.6 Electrical characteristics tests 70 5.6.1 Peak reverse current, IRM 71 5.6.2 DC reverse current, IR 72 5.6.3 Average reverse current, IR(AV) 73 5.6.4 Peak forward voltage, VFM 77 5.6.5 DC forward voltage, VF 80 5.6.6 Average forward voltage, VF(AV) 81 5.6.7 Reverse break
19、down voltage, V(BR) 82 5.6.8 Forward switching characteristics 86 5.6.9 Reverse recovery characteristics 90 5.6.10 Total capacitance, Ct 106 5.7 Thermal characteristics tests 107 5.7.1 Terminology 108 5.7.2 General test description 109 5.7.3 Heat dissipator requirements 112 5.7.4 Determining referen
20、ce temperature 113 5.7.5 Thermal resistance test methods 114 5.7.6 Transient thermal impedance test methods 123 5.7.7 Effective thermal resistance of bridge rectifier assemblies 131 JEDEC Standard No. 282B.01 -iii- SILICON RECTIFIER DIODES CONTENTS (continued) Page SECTION 6: USERS GUIDE 6.1 Introdu
21、ction 139 6.2 Diode safety considerations 139 6.3 Voltage considerations 139 6.3.1 Repetitive peak reverse voltage 139 6.3.2 Non-repetitive peak reverse voltage 140 6.3.3 Overvoltages 140 6.3.4 Series operation 141 6.4 Current considerations 142 6.4.1 Maximum operating junction temperature 142 6.4.2
22、 Junction heat generation 143 6.4.3 Thermal resistance 143 6.4.4 Steady-state current ratings 145 6.4.5 Overload current ratings 146 6.4.6 Parallel operation 147 6.5 Switching characteristics 148 6.5.1 Forward recovery and turn-on-time 148 6.5.2 Reverse recovery 149 6.6 Fundamental rectifier circuit
23、s 150 6.7 Cooling considerations 156 6.7.1 General mounting considerations 156 6.7.2 Installation of stud-mounted semiconductor devices 159 6.7.3 Installation of disk-type semiconductor devices 159 6.7.4 Installation of lead-mounted semiconductor devices 160 6.7.5 Installation of press-fit semicondu
24、ctor devices 161 6.7.6 Installation of button-type semiconductor devices 162 6.8 Temperature measurements 163 6.8.1 General 163 6.8.2 Diode junction temperature 163 6.8.3 Case temperature 165 6.8.4 Mounting surface temperature 165 6.8.5 Lead temperature 167 6.8.6 Free-air convection measurements of
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