JEDEC JESD210A-2017 Avalanche Breakdown Diode (ABD) Transient Voltage Suppressors.pdf

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1、JEDEC STANDARD Avalanche Breakdown Diode (ABD) Transient Voltage Suppressors JESD210A (Revision of JESD210, December 2007) MARCH 2017 JEDEC SOLID STATE TECHNOLOGY ASSOCIATION NOTICE JEDEC standards and publications contain material that has been prepared, reviewed, and approved through the JEDEC Boa

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6、e in conformance with this standard may be made unless all requirements stated in the standard are met. Inquiries, comments, and suggestions relative to the content of this JEDEC standard or publication should be addressed to JEDEC at the address below, or refer to www.jedec.org under Standards and

7、Documents for alternative contact information. Published by JEDEC Solid State Technology Association 2017 3103 North 10th Street Suite 240 South Arlington, VA 22201-2107 This document may be downloaded free of charge; however JEDEC retains the copyright on this material. By downloading this file the

8、 individual agrees not to charge for or resell the resulting material. PRICE: Contact JEDEC Printed in the U.S.A. All rights reserved PLEASE! DONT VIOLATE THE LAW! This document is copyrighted by JEDEC and may not be reproduced without permission. For information, contact: JEDEC Solid State Technolo

9、gy Association 3103 North 10th Street Suite 240 South Arlington, VA 22201-2107 or refer to www.jedec.org under Standards-Documents/Copyright Information. JEDEC Standard No. 210A -i- AVALANCHE BREAKDOWN DIODE (ABD) TRANSIENT VOLTAGE SUPPRESSORS Contents Page Introduction i 1 Scope 1 2 Terms and defin

10、itions 1 2.1 Basic concepts 1 2.2 Classes of avalanche breakdown diodes (ABD) 2 2.3 Avalanche breakdown diode (ABD) specification concepts 5 2.3.1 Specification concepts for all ABD types 5 2.3.2 Thermal specification concepts for all ABD types 8 2.3.3 Additional specification concepts for unidirect

11、ional-conducting ABD devices 10 2.3.4 Additional specification concepts for low-capacitance ABD devices 10 2.3.5 Additional specification concepts for ABD arrays 11 2.3.6 Additional specification concepts for unidirectional-blocking ABD devices 11 3 Rating verification tests 11 3.1 Rated random recu

12、rring peak impulse power dissipation (PPPSM) 113.2 Rated average power dissipation (PM(AV) 12 3.3 Rated random recurring peak impulse current (IPPSM) 133.4 Rated forward surge current (IFSM) 133.5 Rated working standoff voltage (VWM) 14 4 Characteristic Tests 14 4.1 Breakdown (avalanche) voltage (V(

13、BR) 14 4.2 Standby current (ID) or blocking leakage current (IIB) 154.3 Clamping voltage (VC) 16 4.4 Forward surge voltage (VFS) 174.5 Capacitance (C or CJ) 18 4.6 Temperature coefficient of breakdown voltage (V(BR) 194.7 Thermal impedance (ZJAor ZthJA, ZJCor ZthJC, ZJLor ZthJL) 204.8 Thermal resist

14、ance (RJAor RthJA; RJCor RthJC; RJLor RthJL54.9 Peak ESD limiting voltage (VP) or clamping voltage (VCor VCF) 25 4.10 Crosstalk voltage (VCT) 27 4.11 Signal line balance 28 4.12 Simultaneous surge 30 4.13 Peak overshoot voltage (VOS) 32 4.14 Temperature derating test method for IPPSM or PPPSM 33 Ann

15、ex A Differences between revisions 34 JEDEC Standard No. 210A -ii- Introduction Avalanche breakdown diodes (ABDs) described in this document are used as surge protectors by limiting or clamping transient overvoltages and diverting surge currents away from the circuits they are intended to protect. A

16、BDs exhibit relatively high impedance at normal system voltages. They limit transient overvoltages by providing a low impedance to conduct the surge current. These devices may offer either unidirectional or bidirectional protection. ABDs are commonly used in power and communications circuits. Avalan

17、che breakdown diodes are similar to regulator (i.e., Zener) diodes, except that they are designed for short-duration overvoltage protection identified as random recurring transients where cooling occurs before repeating, rather than continuous voltage regulation. They may be single two-lead devices

18、or may have multiple (junctions) devices in a single package. For the purpose of achieving, specific registration formats are available to fit particular types of avalanche breakdown diodes. These formats are subject to change as new semiconductor developments or circuit applications become practica

19、ble. At present, the following formats are available: NUMBER DESCRIPTION RDF-12 Diode, Voltage Transient Suppressor Family JEDEC Standard No. 210A Page 1 AVALANCHE BREAKDOWN DIODE (ABD) TRANSIENT VOLTAGE SUPPRESSORS (Device Definitions, Rating Verification Tests, and Characteristic Testing) (From JE

20、DEC BoD Ballot JCB-04-55 and JCB-12-70, formulated under the cognizance of the JC-22.5 Subcommittee on Transient Voltage Suppressors.) 1 Scope This standard is applicable to avalanche breakdown diodes when used as a surge protector or transient voltage suppressor (TVS). It describes terms and defini

21、tions and explains methods for verifying device ratings and measuring device characteristics. This standard may be applied to other surge-protection components with similar characteristics as the ABD. 2 Terms and definitions These may use terms similar to other regulator devices such as Zener diodes

22、 but have variations unique to ABDs. 2.1 Basic concepts 2.1.1 avalanche breakdown diode (ABD): A transient voltage suppressor that is a semiconductor diode with a single p-n junction (or with multiple p-n junctions none of which interact) whose operation depends in part on its breakdown characterist

23、ics. 2.1.2 stand-off (nonconducting) region: The portion of the voltage-current characteristic of a reverse-biased p-n junction that exhibits a high resistance to the passage of current. 2.1.3 breakdown region: The portion of the voltage-current characteristic beyond the initiation of breakdown for

24、an increasing magnitude of reverse current. 2.1.4 forward-conducting region (of a unidirectional ABD): The portion of the voltage-current characteristic of a unidirectional ABD forward-biased p-n junction that exhibits a low small-signal resistance to the passage of current. 2.1.5 anode terminal (A,

25、 a): The terminal connected to the p-type region of the p-n junction or, when two or more p-n junctions are connected in series with the same polarity, to the extreme p-type region. NOTE For unidirectional blocking or low-capacitance ABDs, any rectifier diode(s) that may be included are ignored in t

26、he determination of the anode terminal. JEDEC Standard No. 210A Page 2 2 Terms and definitions (contd) 2.1.6 cathode terminal (K, k): The terminal connected to the n-type region of the p-n junction or, when two or more p-n junctions are connected in series with the same polarity, to the extreme n-ty

27、pe region. NOTE For unidirectional blocking or low-capacitance ABDs, any rectifier diode(s) that may be included are ignored in the determination of the cathode terminal. 2.2 Classes of avalanche breakdown diodes (ABDs) 2.2.1 unidirectional ABD: A two-terminal ABD with a voltage-current avalanche br

28、eakdown characteristic in one direction and either a forward or a blocking characteristic in the other. (See Figures 1a and 1b.) NOTE Large transient currents will be clamped for positive cathode-to-anode voltages when driven into the avalanche breakdown region with one or more p-n junctions placed

29、in series or parallel with each junction connected in the same direction. Large transient currents may also be clamped for negative cathode-to-anode voltages at significantly lower voltages with the typical forward-conducting characteristics of a single p-n junction (or of multiple p-n junctions con

30、nected in the same direction). The most common type of unidirectional ABD has a forward-conducting characteristic. -VKA+VKA-I+I-VKA+VKA-I+IFigure 1a Unidirectional-conducting ABD Figure 1b Unidirectional-blocking ABD JEDEC Standard No. 210A Page 3 2.2 Classes of avalanche breakdown diodes (ABDs) (co

31、ntd) 2.2.2 bidirectional ABD: A two-terminal ABD with a voltage-current avalanche breakdown characteristic in both directions, which can be either symmetrical (Figure 2a) or asymmetrical (Figure 2b). Figure 2c shows several alternative symbols for the bidirectional ABD. NOTE Large transient currents

32、 will be clamped for voltage of either polarity across two similar p-n junctions in series connected in opposite directions. During a transient current event in this operating mode, one of the two p-n junctions is always in avalanche breakdown and the other is in the forward-conducting, low-voltage

33、mode. The voltage across the bidirectional ABD is the sum of these two voltages. The avalanche breakdown voltage is substantially the same in both directions for a symmetrical bidirectional ABD; however, it may also be intentionally different or asymmetrical by design for special applications. Since

34、 multiple p-n junction capacitances in series reduce the overall total capacitance, the bidirectional ABD has lower capacitance than its unidirectional counterpart. -VKA+VKA-I+I-VKA+VKA-I+IFigure 2a Symmetrical bidirectional ABD Figure 2b Asymmetrical bidirectional ABD Figure 2c Bidirectional ABD sy

35、mbol options 2.2.3 low-capacitance ABD: A two-terminal device that has at least one unidirectional ABD with at least one rectifier p-n junction connected in series with each ABD in the opposite polarity in order to reduce capacitance. NOTE The rectifier p-n junction(s) operate only in their forward-

36、conducting mode during a transient event. JEDEC Standard No. 210A Page 4 2.2 Classes of avalanche breakdown diodes (ABDs) (contd) 2.2.3.1 unidirectional-blocking low-capacitance ABD: A two-terminal device that has at least one unidirectional ABD with at least one rectifier p-n junction connected in

37、series in the opposite polarity in order to reduce capacitance. (See Figure 3.) NOTE The unidirectional-blocking low-capacitance ABD is intended to suppress transients in only one direction. The rectifier p-n junction(s) have low capacitance and block in the reverse direction; they are not intended

38、to be operated in their reverse avalanche breakdown regions. The p-n junction that serves as the unidirectional ABD determines which terminal is the anode and which is the cathode; for that determination, the rectifier p-n junction is ignored. Figure 3 Unidirectional-blocking low-capacitance ABD 2.2

39、.3.2 unidirectional-conducting low-capacitance ABD: A two-terminal device comprising a unidirectional-blocking low-capacitance ABD and an anti-parallel diode. (See Figure 4.) NOTE To create a low-capacitance ABD with a forward-conducting, low-voltage characteristic, a low-capacitance diode (such as

40、a rectifier) is placed in anti-parallel to the unidirectional-blocking low-capacitance ABD. This diode must have a reverse blocking voltage greater than the avalanche breakdown voltage of the unidirectional ABD. Figure 4 Unidirectional-conducting low capacitance ABD JEDEC Standard No. 210A Page 5 2.

41、2 Classes of avalanche breakdown diodes (ABDs) (contd) 2.2.3.3 bidirectional low-capacitance ABD: A two-terminal device comprising two anti-parallel unidirectional-blocking low-capacitance ABD devices. (See Figure 5.) NOTE The rectifier p-n junctions have low capacitance and must have a reverse bloc

42、king voltage greater than the avalanche breakdown voltage of the anti-parallel unidirectional ABD element. Figure 5 Bidirectional low-capacitance ABD 2.2.4 ABD array: A device having three or more terminals and containing multiple diodes within a single package, with at least one of the diodes being

43、 an ABD. NOTE ABD arrays can be classified as 1) devices with multiple discrete semiconductor chips; and 2) devices with multiple diode junctions diffused into a single semiconductor chip. 2.3 Avalanche breakdown diode (ABD) specification concepts 2.3.1 Specification concepts for all ABD types 2.3.1

44、.1 rated working standoff voltage (VWM): The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that may be continuously applied to an ABD over the standard operating temperature range. 2.3.1.2 standby current (ID): The current through an ABD at rated stand-off voltage. 2

45、.3.1.3 breakdown avalanche voltage (V(BR): The voltage across an ABD at a specified current I(BR)in the breakdown region. JEDEC Standard No. 210A Page 6 2.3 Avalanche breakdown diode (ABD) specification concepts (contd) 2.3.1.4 clamping voltage (VCor VCF): The voltage across an ABD in a region of lo

46、w differential resistance that serves to limit the voltage across the device terminals. NOTE 1 For an asymmetrical device, VCrefers to the clamping voltage in the reverse direction, and VCFrefers to the clamping voltage in the forward direction. NOTE 2 Clamping voltage is measured as the peak voltag

47、e across an ABD during the application of an impulse current (IPP) for a specified waveform. NOTE 3 Due to thermal, reactive, or other effects, peak voltage and peak pulse current may not necessarily be coincident. 2.3.1.5 peak impulse current (IPP): The peak current that is applied to an ABD to det

48、ermine the clamping voltage (VC) for a specified impulse waveform. 2.3.1.6 rated random recurring peak impulse current (IPPSM): The maximum-rated value of random recurring peak impulse current that may be applied to a device. NOTE 1 A repetitive current is usually a function of the circuit and incre

49、ases the heating effects within the device. A random recurring transient current is usually due to an external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives. NOTE 2 The symbol IPPor IPPMis often used by the industry; however IPPSMis preferred. 2.3.1.7 rated average power dissipation (PM(AV): The maximum-rated value of power dissipation resulting from all sources, including transients and standby current, averaged over a short period of time. NOTE This value should be comparable to the