GEIA SSB-1 001-1999 Qualification and Reliability Monitors Annex to SSB-1 Guidelines for Using Plastic Encapsulated Microcircuits and Semiconductors in Military Aerospace and Other.pdf

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1、7 O 9 u) u) 7 m EIA ENGINEERING BULLETIN Qualification and Reliability Monitors SSB-1.001 (Annex to SSB-1, Guidelines for Using Plastic Encapsulated Microcircuits and Semiconductors in Military, Aerospace and Other Rugged Applications) ELECTRONIC INDUS TRIES ALLIANCE GOVERNMENT ELECTRONICS AND INFOR

2、MATION TECHNOLOGY ASSOCIATION ENGINEERING DEPARTMENT Copyright Government Electronics distribution is wilunited. Copyright Government Electronics st as part of device qualification, reliability monitors and after any design or process change which may affect data retention. The methods and procedure

3、s may be vendor specific, but should guarantee the number of years over the temperature range. 4 Copyright Government Electronics & Information Technology Association Reproduced by IHS under license with GEIA Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-SSB-1 .O

4、01 4 Monitoring Tests The following tests apply to monitoring for plastic encapsulated microcircuits and discrete semiconductors. Unless otherwise noted, these tables do not imply a specific sequence of tests. The user of this bulletin should also note that some devices are not designed to perform u

5、nder the specific conditions of the tests as cited below and may be damaged when subjected to these conditions. Before and after each stress test, electrical tests shall be performed to the applicable device specification or data sheet. Equivalent test condition descriptions can be found in CDF-AEC-

6、 Q100, CDF-AEC-Q101, EIA J-STD-020, EIA JESD-22, or MIL-STD-750. Test Preco nd it i on in g : I/ (Surface Mount Devices only) Performed before TC, and THB or HAST Temperature Cycling (TC) Life Test MICROCIRCUITS Tem perat u re humidity bias (TH B) or Highly Accelerated Stress Testing (HAST) 2/ DISCR

7、ETE SEMICONDUCTORS Tem perat u re humidity bias (TH B) Autoclave Data Retention s/ (Nonvolatile Memory Devices only) Minimum Conditions In accordance with EIA JESD-22-A113, or equivalent In accordance with EIA JESD-22-A104, or equivalent 500 cycles -65C to +I 50C or 1000 cycles -55C to +125“C In acc

8、ordance with EIA JESD-22-A108, or equivalent - 1000 hours +125“C or equivalent stress condition MI CROCI RCU ITS THB: In accordance with EIA JESD-22-A101, or equivalent - 1000 hours +85“C / 85% RH HAST: In accordance with EIA JESD-22-A1 IO, or equivalent - 96 hours +130“C / 85% RH or equivalent stre

9、ss condition DISCRETE SEMICONDUCTORS THB: In accordance with EIA JESD-22-A101, or equivalent - 1000 hours +85“C / 85% RH, performed with a reverse breakdown voltage of 80% UD to IOOV maximum. In accordance with EIA JESD-22-A102, or equivalent - 96 hours +121“C / 15 PSIG 1 O00 hours +I 50C 5 Copyrigh

10、t Government Electronics & Information Technology Association Reproduced by IHS under license with GEIA Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-SSB-1 .O01 NOTES: - I/ The user of this bulletin should verify if preconditioning was performed prior to TC and T

11、HB or HAST. The level used in preconditioning should also be verified to assure that it comprehends the board level attached process used by the OEM (e.g. solder at 235+/-5 vs. 217+/-2). - 2/ Some device manufacturers perform THB testing in lieu of HAST. These test methods are not equivalent and HAS

12、T may be preferred for some applications. The user of this bulletin should consider the differences between these methods when determining the suitability of a device manufacturers test flows for the specific equipment application. - 3/ For nonvolatile memory devices, manufacturers should perform a

13、data retention stress test as part of device qualification, reliability monitors and after any design or process change which may affect data retention. The methods and procedures may be vendor specific, but should guarantee the number of years over the temperature range. 6 Copyright Government Elec

14、tronics & Information Technology Association Reproduced by IHS under license with GEIA Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-EIA Document Improvement Proposal Document No. If in the review or use of this document, a potential change is made evident for sa

15、fety, health or technical reasons, please fill in the appropriate information below and mail or FAX to: Document Title: Electronic Industries Alliance Engineering Department - Publications Office 2500 Wilson Blvd. Arlington, VA 2220 1 FAX: (703) 907-7501 Submitters Name: Telephone No.: FAXNo.: e-mai

16、l: Address: Urgency of Change: Immediate: 0 At next revision: 0 Problem Area: a. Clause Number and/or Drawing: b. Recommended Changes: c. ReasodRationale for Recommendation: Additional Remarks: Signature: Date: FOR EIA USE ONLY Responsible Committee: Chairman: Date comments forwarded to Committee Ch

17、airman: Copyright Government Electronics & Information Technology Association Reproduced by IHS under license with GEIA Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-Copyright Government Electronics & Information Technology Association Reproduced by IHS under lic

18、ense with GEIA Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-Copyright Government Electronics & Information Technology Association Reproduced by IHS under license with GEIA Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-Copyright Government Electronics & Information Technology Association Reproduced by IHS under license with GEIA Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-