EN 62047-25-2016 en Semiconductor devices - Micro-electromechanical devices - Part 25 Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing stre.pdf

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1、Semiconductor devices Micro-electromechanical devicesPart 25: Silicon based MEMS fabrication technology Measurement method of pull-press and shearing strength of micro bonding areaBS EN 62047-25:2016BSI Standards PublicationWB11885_BSI_StandardCovs_2013_AW.indd 1 15/05/2013 15:06National forewordThi

2、s British Standard is the UK implementation of EN 62047-25:2016. It isidentical to IEC 62047-25:2016. The UK participation in its preparation was entrusted to TechnicalCommittee EPL/47, Semiconductors.A list of organizations represented on this committee can be obtained onrequest to its secretary.Th

3、is publication does not purport to include all the necessary provisions ofa contract. Users are responsible for its correct application. The British Standards Institution 2016.Published by BSI Standards Limited 2016ISBN 978 0 580 85615 0ICS 31.080.99Compliance with a British Standard cannot confer i

4、mmunity fromlegal obligations.This British Standard was published under the authority of theStandards Policy and Strategy Committee on 30 November 2016.Amendments/corrigenda issued since publicationDate Text affectedBRITISH STANDARDBS EN 62047-25:2016EUROPEAN STANDARD NORME EUROPENNE EUROPISCHE NORM

5、 EN 62047-25 November 2016 ICS 31.080.99 English Version Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area (IEC 62047-25:2016) Dispositifs semiconducteurs - Dispo

6、sitifs microlectromcaniques - Partie 25: Technologie de fabrication de MEMS base de silicium - Mthode de mesure de la rsistance la traction-compression et au cisaillement dune micro zone de brasure (IEC 62047-25:2016) Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 25: Siliziumbasi

7、erte MEMS-Herstellungstechnologie - Messverfahren zur Zug-Druck- und Scherfestigkeit gebondeter Flchen im Mikrometerbereich (IEC 62047-25:2016) This European Standard was approved by CENELEC on 2016-10-03. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate

8、the conditions for giving this European Standard the status of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC Management Centre or to any CENELEC member. This European St

9、andard exists in three official versions (English, French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the same status as the official versions. CENELEC members a

10、re the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic, Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway,

11、Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland, Turkey and the United Kingdom. European Committee for Electrotechnical Standardization Comit Europen de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnische Normung CEN-CENELEC Management Centre: Avenue Mar

12、nix 17, B-1000 Brussels 2016 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members. Ref. No. EN 62047-25:2016 E BS EN 62047-25:2016EN 62047-25:2016 2 European foreword The text of document 47F/249/FDIS, future edition 1 of IEC 62047-25, prepared by SC

13、 47F “Microelectromechanical systems” of IEC/TC 47 “Semiconductor devices“ was submitted to the IEC-CENELEC parallel vote and approved by CENELEC as EN 62047-25:2016. The following dates are fixed: latest date by which the document has to be implemented at national level by publication of an identic

14、al national standard or by endorsement (dop) 2017-07-03 latest date by which the national standards conflicting with the document have to be withdrawn (dow) 2019-10-03 Attention is drawn to the possibility that some of the elements of this document may be the subject of patent rights. CENELEC and/or

15、 CEN shall not be held responsible for identifying any or all such patent rights. Endorsement notice The text of the International Standard IEC 62047-25:2016 was approved by CENELEC as a European Standard without any modification. BS EN 62047-25:2016EN 62047-25:2016 3 Annex ZA (normative) Normative

16、references to international publications with their corresponding European publications The following documents, in whole or in part, are normatively referenced in this document and are indispensable for its application. For dated references, only the edition cited applies. For undated references, t

17、he latest edition of the referenced document (including any amendments) applies. NOTE 1 When an International Publication has been modified by common modifications, indicated by (mod), the relevant EN/HD applies. NOTE 2 Up-to-date information on the latest versions of the European Standards listed i

18、n this annex is available here: www.cenelec.eu Publication Year Title EN/HD Year IEC 62047-1 - Semiconductor devices - Micro-electromechanical devices - Part 1: Terms and definitions EN 62047-1 - ISO 10012 - Measurement management systems - Requirements for measurement processes and measuring equipm

19、ent EN ISO 10012 - BS EN 62047-25:2016 2 IEC 62047-25:2016 IEC 2016 CONTENTS FOREWORD . 4 1 Scope 6 2 Normative references. 6 3 Terms and definitions 6 4 Requirements 7 4.1 Testing structure design requirements . 7 4.2 Testing structure fabrication requirements . 9 4.3 Testing environment requiremen

20、ts . 9 5 Testing method 9 5.1 General . 9 5.2 Pull-press testing method 9 5.2.1 Imposing the loading force . 9 5.2.2 Pull-press testing method operation process . 9 5.2.3 Pull-press testing method result process . 10 5.3 Shearing testing method 10 5.3.1 Shearing testing method operation process 10 5

21、.3.2 Shearing testing method result process 12 Annex A (informative) Dimensions for testing structure and tensile/compressive strength 13 A.1 Dimensions for testing structure 13 A.2 Tensile strength and compressive strength 13 Annex B (informative) Pull-press testing method example . 21 B.1 Dimensio

22、ns for testing structure 21 B.2 Tensile strength and compressive strength 21 Figure 1 Pull-press testing structure . 7 Figure 2 Shearing testing structure . 8 Figure 3 Pull-press testing method operation process . 10 Figure 4 Shearing testing method operation process . 11 Table 1 Dimensions for shea

23、ring testing structure . 12 Table A.1 Dimensions for testing structure 13 Table A.2 Tensile strength and compressive strength (bonding area: 10 m 10 m) 13 Table A.3 Tensile strength and compressive strength (bonding area: 20 m 20 m) 14 Table A.4 Tensile strength and compressive strength (bonding are

24、a: 30 m 30 m) 14 Table A.5 Tensile strength and compressive strength (bonding area: 40 m 40 m) 15 Table A.6 Tensile strength and compressive strength (bonding area: 50 m 50 m) 15 Table A.7 Tensile strength and compressive strength (bonding area: 60 m 60 m) 15 Table A.8 Tensile strength and compressi

25、ve strength (bonding area: 70 m 70 m) 16 Table A.9 Tensile strength and compressive strength (bonding area: 80 m 80 m) 16 Table A.10 Tensile strength and compressive strength (bonding area: 90 m 90 m) . 17 Table A.11 Tensile strength and compressive strength (bonding area: 100 m 100 m) . 17 BS EN 62

26、047-25:2016IEC 62047-25:2016 IEC 2016 3 Table A.12 Tensile strength and compressive strength (bonding area: 110 m 110 m) . 18 Table A.13 Tensile strength and compressive strength (bonding area: 120 m 120 m) . 18 Table A.14 Tensile strength and compressive strength (bonding area: 130 m 130 m) . 19 Ta

27、ble A.15 Tensile strength and compressive strength (bonding area: 140 m 140 m) . 19 Table A.16 Tensile strength and compressive strength (bonding area: 150 m 150 m) . 20 Table B.1 Dimensions for testing structure 21 Table B.2 Tensile strength and compressive strength (bonding area: 110 m 110 m) . 21

28、 BS EN 62047-25:2016 4 IEC 62047-25:2016 IEC 2016 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 25: Silicon based MEMS fabrication technology Measurement method of pull-press and shearing strength of micro bonding area FOREWORD 1) The Internat

29、ional Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international co-operation on all questions concerning standardization in the electrical and electron

30、ic fields. To this end and in addition to other activities, IEC publishes International Standards, Technical Specifications, Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC Publication(s)”). Their preparation is entrusted to technical committees;

31、any IEC National Committee interested in the subject dealt with may participate in this preparatory work. International, governmental and non-governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely with the International Organization for Standa

32、rdization (ISO) in accordance with conditions determined by agreement between the two organizations. 2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international consensus of opinion on the relevant subjects since each technical committee has rep

33、resentation from all interested IEC National Committees. 3) IEC Publications have the form of recommendations for international use and are accepted by IEC National Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC Publications is accurate, I

34、EC cannot be held responsible for the way in which they are used or for any misinterpretation by any end user. 4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications transparently to the maximum extent possible in their national and regional publ

35、ications. Any divergence between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in the latter. 5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity assessment services and, in some are

36、as, access to IEC marks of conformity. IEC is not responsible for any services carried out by independent certification bodies. 6) All users should ensure that they have the latest edition of this publication. 7) No liability shall attach to IEC or its directors, employees, servants or agents includ

37、ing individual experts and members of its technical committees and IEC National Committees for any personal injury, property damage or other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and expenses arising out of the publication, use of, or relian

38、ce upon, this IEC Publication or any other IEC Publications. 8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is indispensable for the correct application of this publication. 9) Attention is drawn to the possibility that some of the ele

39、ments of this IEC Publication may be the subject of patent rights. IEC shall not be held responsible for identifying any or all such patent rights. International Standard IEC 62047-25 has been prepared by subcommittee 47F: Micro-electromechanical systems, of IEC technical committee 47: Semiconductor

40、 devices. The text of this standard is based on the following documents: FDIS Report on voting 47F/249/FDIS 47F/252/RVD Full information on the voting for the approval of this standard can be found in the report on voting indicated in the above table. This publication has been drafted in accordance

41、with the ISO/IEC Directives, Part 2. BS EN 62047-25:2016IEC 62047-25:2016 IEC 2016 5 The committee has decided that the contents of this publication will remain unchanged until the stability date indicated on the IEC website under “http:/webstore.iec.ch“ in the data related to the specific publicati

42、on. At this date, the publication will be reconfirmed, withdrawn, replaced by a revised edition, or amended. IMPORTANT The colour inside logo on the cover page of this publication indicates that it contains colours which are considered to be useful for the correct understanding of its contents. User

43、s should therefore print this document using a colour printer. BS EN 62047-25:2016 6 IEC 62047-25:2016 IEC 2016 SEMICONDUCTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 25: Silicon based MEMS fabrication technology Measurement method of pull-press and shearing strength of micro bonding area 1 Scop

44、e This part of IEC 62047 specifies the in-situ testing method to measure the bonding strength of micro bonding area which is fabricated by micromachining technologies used in silicon-based micro-electromechanical system (MEMS). This document is applicable to the in-situ pull-press and shearing stren

45、gth measurement of the micro bonding area fabricated by microelectronic technology process and other micromachining technology. Micro anchor, fixed on the substrate through the micro bonding area, provides mechanical support of the movable sensing/actuating functional components in MEMS devices. Wit

46、h the devices scaling, the bonding strength degradation, induced by defects, contaminations and thermal mismatch stress on bonding surface, becomes severer. This standard specifies an in-situ testing method of the pull-press and shearing strength based on a patterned technique. This document does no

47、t need intricate instruments (such as scanning probe microscopy and nanoindenter) and to prepare the test specimen specially. Since the testing structure in this standard can be implanted in device fabrication as a standard detection pattern, this document can provide a bridge, by which the fabricat

48、ion foundry can give some quantitative reference for the designer. 2 Normative references The following documents are referred to in the text in such a way that some or all of their content constitutes requirements of this document. For dated references, only the edition cited applies. For undated r

49、eferences, the latest edition of the referenced document (including any amendments) applies. IEC 62047-1, Semiconductor devices Micro-electromechanical devices Part 1: Terms and definitions ISO 10012, Measurement management systems Requirements for measurement processes and measuring equipment 3 Terms and definitions For the purposes of this document, the terms and defin