DLA SMD-5962-99551 REV B-2007 MICROCIRCUIT LINEAR RADIATION HARDENED POSITIVE VOLTAGE REGULATOR MONOLITHIC SILICON《微型电路 线型 辐射加固 正极 稳压器 单块硅》.pdf

《DLA SMD-5962-99551 REV B-2007 MICROCIRCUIT LINEAR RADIATION HARDENED POSITIVE VOLTAGE REGULATOR MONOLITHIC SILICON《微型电路 线型 辐射加固 正极 稳压器 单块硅》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-99551 REV B-2007 MICROCIRCUIT LINEAR RADIATION HARDENED POSITIVE VOLTAGE REGULATOR MONOLITHIC SILICON《微型电路 线型 辐射加固 正极 稳压器 单块硅》.pdf（14页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add case outline “X”. Change made to 1.5. Changes also made to VOUT, VRLINE, VRLOAD, ISCD(LOAD), IOL, IOS, NO, VOUT/IL, and VIN/VOUTin table I. - rrp 99-04-28 R. MONNIN B Add low dose rate footnote to 1.5 and table I. Delete Accelerated aging tes

2、t, 4.4.4.1.1. - ro 07-06-20 R. HEBER REV SHET REV SHET REV STATUS REV B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 PMIC N/A PREPARED BY RAJESH PITHADIA DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY RAJESH PITHADIA COLUMBUS, OHIO 43218-3990 http:/w

3、ww.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY RAYMOND MONNIN AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 99-04-05 MICROCIRCUIT, LINEAR, RADIATION HARDENED, POSITIVE, VOLTAGE REGULATOR, MONOLITHIC SILICON AMSC N/A REVISION LEVEL B SIZE A CAGE COD

4、E 67268 5962-99551 SHEET 1 OF 13 DSCC FORM 2233 APR 97 5962-E463-07 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99551 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC

5、 FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Numbe

6、r (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 99551 01 Q X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (s

7、ee 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specif

8、ied RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 LM140H-5.0 Voltage regulator, +5 V at 0.5 A 1.2.3 Device class d

9、esignator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535

10、, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 3 TO-39 Can Y MBFM1-P2 2 Flange mount 1.2.5 Lead finish. The

11、lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99551 DEFENSE SUPPLY CENTER COLUMBUS CO

12、LUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ DC input voltage (VIN) . 35 V Power dissipation (PD) Internally limited 2/ Storage temperature range -65C to +150C Lead temperature (soldering, 10 seconds) +300C Maximum junction temperature (TJ)

13、+150C Thermal resistance, junction-to-case (JC) 15C/W Thermal resistance, junction-to-ambient (JA) . 232C/W still air 7C/W 500 LFPM air flow 1.4 Recommended operating conditions. Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate

14、= 50 300 rads (Si)/s ): Device classes Q and V . 100 Krads 3/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of th

15、ese documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electr

16、onic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Stand

17、ardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersede

18、s applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ The maximum allowable power dissipati

19、on at any ambient temperature is a function of maximum TJ, JA, and TA. PD= (TJMAX TA ) / JA. If this dissipation is exceeded, the die temperature will rise above TJMAX and the electrical specifications do not apply. If the die temperature rises above 150C, the device will go into thermal shutdown. W

20、hen using a heatsink, JAis the sum of JCand the case-to-ambient thermal resistance (CA) of the heatsink. 3/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for th

21、e conditions specified in MIL-STD-883, method 1019, condition A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99551 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FO

22、RM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affec

23、t the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and phys

24、ical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections

25、shall be as specified on figure 2. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 3. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and po

26、stirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table

27、I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the devic

28、e. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark

29、for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 l

30、isted manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance

31、submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Cert

32、ificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class

33、M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to rev

34、iew the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 52 (

35、see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99551 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrica

36、l performance characteristics. Test Symbol Conditions 1/ 2/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Output voltage VOUTVIN= 8 V, IL= -5 mA 1, 2, 3 01 4.75 5.25 V VIN= 8 V, IL= -500 mA 1, 2, 3 4.75 5.25 VIN= 20 V, IL= -5 mA 1, 2, 3 4.75 5.25 VIN= 20

37、V, IL= -500 mA 1, 2, 3 4.75 5.25 VIN= 35 V, IL= -5 mA 1, 2, 3 4.75 5.25 VIN= 35 V, IL= -50 mA 1, 2, 3 4.75 5.25 Line regulation VRLINE8 V VIN 35 V, IL= -50 mA 1, 2, 3 01 -150 150 mV 8 V VIN 25 V, IL= -350 mA 1, 2, 3 -50 50 Load regulation VRLOADVIN= 10 V, -500 mA IL -5 mA 1, 2, 3 01 -100 100 mV VIN=

38、 35 V, -50 mA IL -5 mA 1, 2, 3 -150 150 Standby current drain ISCDVIN= 10 V, IL= -5 mA 1, 2, 3 01 -7 -0.5 mA VIN= 35 V, IL= -5 mA 1, 2, 3 -8 -0.5 Standby current drain versus line voltage ISCD(LINE) 8 V VIN 35 V, IL= -5 mA 1, 2, 3 01 -1 1 mA Standby current drain versus load current ISCD(LOAD) VIN=

39、10 V, -500 mA IL -5 mA 1, 2, 3 01 -0.5 0.5 mA Overload current IOLVIN= 8 V, forced VOUT= -0.48 V 1, 2, 3 01 -2 -0.5 A IOSVIN= 10 V 1, 2, 3 01 -2 -0.01 A Output short circuit current VIN= 25 V 1, 2, 3 -1.5 -0.01 VIN= 35 V 1, 2, 3 -1 -0.01 Output voltage VOUTVIN= 10 V, 3/ IL= -5 mA, TA= +125C 2 01 4.7

40、 5.3 V Output voltage VOUTVIN= 10 V, 4/ IL= -5 mA 1, 2, 3 01 4.75 5.25 V See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99551 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321

41、8-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ 2/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Average temperature coefficient output voltage VOUT/ T VIN= 10 V,

42、 5/ IL= -5 mA 2, 3 01 -2 2 mV/C Output noise voltage NO VIN= 10 V, IL= -50 mA, TA= +25C 9 01 125 Vrms Transient line response VOUT/ VINVIN= 10 V, VPULSE= 3 V, IL= -5 mA, TA= +25C 9 01 30 mV/V Transient load response VOUT/ ILVIN= 10 V, IL= -200 mA, IL= -50 mA, TA= +25C 9 01 2.5 mV/mA Ripple rejection

43、 VIN/ VOUTVIN= 10 V, ei = 1 Vrms at f = 2400 Hz, IL= -125 mA, TA= +25C 9 01 60 dB 1/ Devices supplied to this drawing have been characterized through all levels M, D, P, L, R of irradiation. However, this device is only tested at the R level. Pre and Post irradiation values are identical unless othe

44、rwise specified in Table I. When performing post irradiation electrical measurements for any RHA level, TA= +25C. 2/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed on

45、ly for the conditions specified in MIL-STD-883, method 1019, condition A. 3/ Tested at TA= +125C, correlated to TA= +150C. 4/ Tested at extremes as a set up for VOUT/ T tests. 5/ Calculated parameter. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-S

46、TANDARD MICROCIRCUIT DRAWING SIZE A 5962-99551 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 Case X FIGURE 1. Case outline. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUI

47、T DRAWING SIZE A 5962-99551 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 8 DSCC FORM 2234 APR 97 Case X continued. Symbol Inches Millimeters Notes Min Max Min Max A .165 .195 4.19 4.95 A1.100 - 2.54 - 7 b .016 .019 0.41 0.48 3 b1.016 .021 0.41 0.53 3 D .335 .370 8.

48、51 9.40 D1.305 .335 7.75 8.51 e .200 BSC 5.08 BSC 5 e1.100 BSC 2.54 BSC 5 F - .050 - 1.27 k .028 .034 0.71 0.86 k1.029 .045 0.74 1.14 4 k2.009 .041 0.23 1.04 L .500 - 12.70 - L1- .050 - 1.27 L2.250 - 6.35 - 45 T.P. 45 T.P. 5 NOTES: 1. The US government preferred system of measurement is the metric SI system. However, this item was originally designed using inch-pound units of measurement. In the event of conflict between the metric and inch-pound