DLA SMD-5962-96834 REV C-2007 MICROCIRCUIT LINEAR RADIATION HARDENED QUAD HIGH SPEED LOW POWER VIDEO CLOSED LOOP BUFFER MONOLITHIC SILICON《四重低功率录像闭环缓冲器硅单片电路线型微电路》.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes to 1.2.4 and 1.4. Added 1.5. Updated boilerplate. - rrp 99-07-13 R. MONNIN B Drawing updated to reflect current requirements. - gt 03-03-18 R. MONNIN C Add a low dose rate footnote to 1.5 and Table I. Delete Neutron and Dose rate latch-up

2、 parameters as specified under 1.5. Delete Accelerated aging test and Neutron testing paragraphs as specified under section 4.4.4. - ro 07-05-28 R. HEBER REV SHET REV SHET REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RAJESH PITHADIA

3、 DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY RAJESH PITHADIA COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL A. FRYE AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 96-03-27 MICROCIR

4、CUIT, LINEAR, RADIATION HARDENED, QUAD, HIGH SPEED, LOW POWER, VIDEO CLOSED LOOP BUFFER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-96834 SHEET 1 OF 14 DSCC FORM 2233 APR 97 5962-E396-07 Provided by IHSNot for ResaleNo reproduction or networking permitted without licens

5、e from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96834 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)

6、 and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following e

7、xample: 5962 F 96834 01 V C A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535

8、 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) iden

9、tify the circuit function as follows: Device type Generic number Circuit function 01 HS-1412RH Radiation hardened, dielectric isolated, quad, high speed, low power, video closed loop buffer 1.2.3 Device class designator. The device class designator is a single letter identifying the product assuranc

10、e level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s)

11、. The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A f

12、or device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96834 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1

13、/ Voltage between V+ and V- 12 V Voltage at either input terminal . V+ to V- Output current . Short circuit protected 2/ Output current (50% duty cycle) 60 mA 2/ Junction temperature (TJ) . +175C Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds) +300C Thermal

14、resistance, junction-to-case (JC) . 20C/W Thermal resistance, junction-to-ambient (JA) 75C/W Maximum package power dissipation (PD) at TA= +125C 0.67 W 3/ 1.4 Recommended operating conditions. Operating supply voltage (V) . 5 V Load resistance (RL) . 50 Ambient operating temperature range (TA) . -55

15、C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50 - 300 rads (Si)/s) 300 Krads (Si) 4/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specifi

16、ed herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard

17、Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quic

18、ksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade perform

19、ance and affect reliability. 2/ Output is short circuit protected to ground. Brief short circuits to ground will not degrade reliability, however continuous (100% duty cycle) output current must not exceed 30 mA for maximum reliability. 3/ If device power exceeds package dissipation capability, prov

20、ide heat sinking or derate linearly (the derating is based on JA) at the following rate: 13.3 mW/C. 4/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the con

21、ditions specified in MIL-STD-883, method 1019, condition A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96834 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 22

22、34 APR 97 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. R

23、EQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or

24、 function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions sha

25、ll be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.

26、 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are

27、 as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be

28、marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this opti

29、on, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall b

30、e a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to sup

31、ply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to list

32、ing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certific

33、ate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of chan

34、ge of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and

35、 applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). Pr

36、ovided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96834 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Tes

37、t Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Output offset voltage VOSVCM= 0 V 1 01 -10 10 mV 2,3 -20 20 M,D,P,L,R,F 2/ 3/ 1 -20 20 Channel-to-channel output offset voltage VOSVCM= 0 V 1 01 -15 15 mV mismatch 2,3 -30 30 M,D,P,L,R,F

38、 2/ 3/ 1 -30 30 Common mode rejection CMRR VCM= 1.8 V, 1 01 42 dB ratio V+ = 3.2 V, V- = -6.8 V, V+ = 6.8 V, V- = -3.2 V 2 39 VCM= 1.2 V, V+ = 3.8 V, V- = -6.2 V, V+ = 6.2 V, V- = -3.8 V 3 39 M,D,P,L,R,F 2/ 3/ 1 39 Power supply rejection PSRRP VSUPPLY= 1.8 V, 1 01 45 dB ratio V+ = 6.8 V, V- = -5 V,

39、V+ = 3.2 V, V- = -5 V 2 42 VSUPPLY= 1.2 V, V+ = 6.2 V, V- = -5 V, V+ = 3.8 V, V- = -5 V 3 42 M,D,P,L,R,F 2/ 3/ 1 42 PSRRN VSUPPLY= 1.8 V, 1 45 V+ = 5 V, V- = -6.8 V, V+ = 5 V, V- = -3.2 V 2 42 VSUPPLY= 1.2 V, V+ = 5 V, V- = -6.2 V, V+ = 5 V, V- = -3.8 V 3 42 M,D,P,L,R,F 2/ 3/ 1 42 See footnotes at e

40、nd of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96834 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance chara

41、cteristics Continued. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Non-inverting input IBSPVCM= 0 V 1 01 -15 15 A (+IN) current 2,3 -25 25 M,D,P,L,R,F 2/ 3/ 1 -25 25 Channel-to-channel IBSPVCM= 0 V 1 01 -15 15 A +IN current mism

42、atch 2,3 -25 25 M,D,P,L,R,F 2/ 3/ 1 -25 25 +IN channel common CMSIBPVCM= 1.8 V, 1 01 1.25 A/V mode sensitivity V+ = 3.2 V, V- = -6.8 V, V+ = 6.8 V, V- = -3.2 V 2 2.85 VCM= 1.2 V, V+ = 3.8 V, V- = -6.2 V, V+ = 6.2 V, V- = -3.8 V 3 2.85 M,D,P,L,R,F 2/ 3/ 1 2.85 +IN resistance +RIN4/ 1 01 800 k 2,3 350

43、 M,D,P,L,R,F 2/ 3/ 1 350 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96834 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 A

44、PR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min MaxGain AVP1AV= +1, 1 01 0.98 1.02 V/V VIN= -1 V to +1 V 2,3 0.975 1.025 M,D,P,L,R,F 2/ 3/ 1 0.975 1.025 AVM1AV= -1, 1 -0.

45、98 -1.02 VIN= -1 V to +1 V 2,3 -0.975 -1.025 M,D,P,L,R,F 2/ 3/ 1 -0.975 -1.025 AVP2AV= +2, 1 1.96 2.04 VIN= -1 V to +1 V 2,3 1.95 2.05 M,D,P,L,R,F 2/ 3/ 1 1.95 2.05 Channel-to-channel AVP1AV= +1, 1 01 -0.02 0.02 V/V gain mismatch VIN= -1 V to +1 V 2,3 -0.025 0.025 M,D,P,L,R,F 2/ 3/ 1 -0.025 0.025 AV

46、M1AV= -1, 1 -0.02 0.02 VIN= -1 V to +1 V 2,3 -0.025 0.025 M,D,P,L,R,F 2/ 3/ 1 -0.025 0.025 AVP2AV= +2, 1 -0.04 0.04 VIN= -1 V to +1 V 2,3 -0.05 0.05 M,D,P,L,R,F 2/ 3/ 1 -0.05 0.05 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from

47、 IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96834 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgr

48、oups Device type Limits Unit Min MaxOutput voltage swing VOP100VIN= -3.2 V, AV= -1, RL= 100 1 01 3 V VIN= -3 V, AV= -1, RL= 100 2,3 2.8 VIN= -3 V, AV= -1, RL= 100 , M,D,P,L,R,F 2/ 3/ 1 2.8 VON100VIN= +3.2 V, AV= -1, RL= 100 1 -3 VIN= +3 V, AV= -1, RL= 100 2,3 -2.8 VIN= +3 V, AV= -1, RL= 100 , M,D,P,L,R,F 2/ 3/ 1 -2.8 Output voltage swing VOP50VIN= -2.7 V, AV= -1, RL= 50 1 01 2.5 V VIN= -2.25 V, AV= -1, 2 2.0 RL= 50 3 1.4 VIN= -2.25 V, AV= -1, RL= 50 , M,D,P,L,R,