DLA SMD-5962-96651 REV D-2006 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS ANALOG MULTIPLEXER DEMULTIPLEXER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体 类似体多路器或信号分离器 硅单片电路数字微电路》.pdf

《DLA SMD-5962-96651 REV D-2006 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS ANALOG MULTIPLEXER DEMULTIPLEXER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体 类似体多路器或信号分离器 硅单片电路数字微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96651 REV D-2006 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS ANALOG MULTIPLEXER DEMULTIPLEXER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体 类似体多路器或信号分离器 硅单片电路数字微电路》.pdf（28页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R013-98. 97-12-17 Raymond Monnin B Incorporate revision A. Update boilerplate to MIL-PRF-38535 requirements. Editorial changes throughout. LTG 04-02-02 Thomas M. Hess C Correct the unit for the IOZLand IOZHtest

2、s in table I. Editorial changes throughout. - LTG 04-04-15 Thomas M. Hess D Update boilerplate to current MIL-PRF-38535 requirements. Correct the input voltage range in paragraph 1.4 from +20.5 V maximum to VDD+ 0.5 V maximum. - CFS 06-11-08 Thomas M. Hess REV SHET REV D D D D D D D D D D D D D SHEE

3、T 15 16 17 18 19 20 21 22 23 24 25 26 27 REV STATUS REV D D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Rick O. Officer STANDARD MICROCIRCUIT DRAWING CHECKED BY Monica L. Poelking DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dsc

4、c.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-12-27 MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, ANALOG MULTIPLEXER/ DEMULTIPLEXER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL D SIZE

5、A CAGE CODE 67268 5962-96651 SHEET 1 OF 27 DSCC FORM 2233 APR 97 5962-E065-07 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-96651 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SH

6、EET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identif

7、ying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 96651 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase

8、 outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, append

9、ix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 4051B Radiation hardened CMOS, single 8-channel multi

10、plexer 02 4052B Radiation hardened CMOS, differential 4-channel multiplexer 03 4053B Radiation hardened CMOS, triple 2-channel multiplexer 04 4051BN Radiation hardened CMOS, single 8-channel multiplexer with neutron irradiated die 05 4052BN Radiation hardened CMOS, differential 4-channel multiplexer

11、 with neutron irradiated die 06 4053BN Radiation hardened CMOS, triple 2-channel multiplexer with neutron irradiated die 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M

12、Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follow

13、s: Outline letter Descriptive designator Terminals Package style E CDIP2-T16 16 Dual-in-line package X CDFP4-F16 16 Flat package 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for Resa

14、leNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-96651 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD). -0.5 V dc

15、to +20 V dc Input voltage range (VIN). -0.5 V dc to VDD+ 0.5 V dc DC input current, any one input 10 mA Device dissipation per output transistor 100 mW Storage temperature range (TSTG) -65C to +150C Lead temperature (soldering, 10 seconds) . +265C Thermal resistance, junction-to-case (JC): Case E. 2

16、4C/W Case X. 29C/W Thermal resistance, junction-to-ambient (JA): Case E. 73C/W Case X. 114C/W Junction temperature (TJ) . +175C Maximum power dissipation at TA= +125C (PD): 4/ Case E. 0.68 W Case X. 0.44 W 1.4 Recommended operating conditions. Supply voltage range (VDD). 3.0 V dc to +18 V dc Case op

17、erating temperature range (TC) -55C to +125C Input voltage range (VIN). 0 V to VDDOutput voltage range (VOUT) . 0 V to VDDRadiation features: Total dose . 1 x 105Rads (Si) Single event phenomenon (SEP) effective linear energy threshold, no upsets or latchup (see 4.4.4.5) 75 MeV/(cm2/mg) 5/ Dose rate

18、 upset (20 ns pulse) 5 x 108 Rads(Si)/s 5/ Dose rate latch-up . 2 x 108Rads(Si)/s 5/ Dose rate survivability . 5 x 1011Rads(Si)/s 5/ Neutron irradiated 1 x 1014neutrons/cm26/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and h

19、andbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. _ 1/ Stre

20、sses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply o

21、ver the full specified VDDrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rate: Case E . 13.7 mW/C Case X . 8.8 mW/C 5/ Guarante

22、ed by design or process but not tested. 6/ Device types 04, 05, and 06 only. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-96651 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHE

23、ET 4 DSCC FORM 2234 APR 97 DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircu

24、it Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between th

25、e text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for

26、device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for devi

27、ce class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction,

28、 and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shal

29、l be as specified on figure 1. 3.2.3 Truth tables. The truth tables shall be as specified on figure 2. 3.2.4 Radiation test connections. The radiation test connections shall be as specified in table III herein. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless o

30、therwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified i

31、n table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations

32、, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535,

33、 appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. Provided by IHSNot for ResaleNo reproduction or ne

34、tworking permitted without license from IHS-,-,-SIZE A 5962-96651 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be requ

35、ired from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The cer

36、tificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix

37、 A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device cla

38、ss M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity r

39、etain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microci

40、rcuit group number 39 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-96651 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 AP

41、R 97 TABLE I. Electrical performance characteristics. Limits Test Symbol Conditions -55C TC +125C unless otherwise specified Devicetype Group A subgroups Min Max Units 1, 3 1/ 5.0 VDD= 5 V VIN= 0.0 V or VDDAll 2 1/ 150 1, 3 1/ 10 VDD= 10 V VIN= 0.0 V or VDDAll 2 1/ 300 1, 3 1/ 10 VDD= 15 V VIN= 0.0

42、V or VDDAll 2 1/ 600 1 10 VDD= 20 V, VIN= 0.0 V or VDDAll 2 1000 M, D, P, L, R 2/ All 1 25 Supply current IDDVDD= 18 V, VIN= 0.0 V or VDDAll 3 10 A VDD= 5 V = VISthrough 1 k VEE= VSSRL= 1 k to VSSIISVDD/2 VOLVDD/2V 9 720 VDD= 5.0 V, VIN= VDDor GND VEE= VSS= 0 V All 10, 11 972 M, D, P, L, R 2/ All 9

43、972 VDD= 10 V, VIN= VDDor GND VEE= VSS= 0 V 9 1/ 320 VDD= 15 V, VIN= VDDor GND VEE= VSS= 0 V 9 1/ 240 Propagation delay time, address to signal out, channels on or off 3/ tPHL, tPLHVDD= 5 V, VIN= VDDor GND VEE= -5 V, VSS= 0 V All 9 1/ 450 ns See footnotes at end of table.Provided by IHSNot for Resal

44、eNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-96651 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 9 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Limits Test Symbol

45、Conditions -55C TC +125C unless otherwise specified Devicetype Group A Subgroups Min Max Units 9 720 VDD= 5.0 V, VIN= VDDor GND VEE= VSS= 0 V 10, 11 972 VDD= 10 V, VIN= VDDor GND VEE= VSS= 0 V 9 1/ 320 VDD= 15 V, VIN= VDDor GND VEE= VSS= 0 V 9 1/ 240 tPZH, tPZL VDD= 5 V, VIN= VDDor GND VEE= -5 V, VS

46、S= 0 V All 9 1/ 400 ns 9 450 VDD= 5.0 V, VIN= VDDor GND VEE= VSS= 0 V 10, 11 608 VDD= 10 V, VIN= VDDor GND VEE= VSS= 0 V 9 1/ 210 VDD= 15 V, VIN= VDDor GND VEE= VSS= 0 V 9 1/ 160 Propagation delay time, inhibit to signal out, channel turning on 3/ tPHZ, tPLZ VDD= 5 V, VIN= VDDor GND VEE= -5 V, VSS=

47、0 V All 9 1/ 300 ns 1/ These tests are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which affect these characteristics. 2/ Devices supplied to this drawing will meet all levels M, D, P, L, and R of

48、irradiation. However, these devices are only tested at the R level. When performing post irradiation electrical measurements for any RHA level, TA= +25C. 3/ CL= 50 pF, RL= 10k, input tr, tf 20 ns. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-96651 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 10 DSCC FORM 2234 APR 97 Device types 01 and 04 Case outlines E and X Terminal nu