DLA SMD-5962-96645 REV B-2005 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS QUAD LOW-TO-HIGH VOLTAGE LEVEL SHIFTER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体四重低到高电压转换器硅单片电路数字微电路》.pdf

《DLA SMD-5962-96645 REV B-2005 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS QUAD LOW-TO-HIGH VOLTAGE LEVEL SHIFTER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体四重低到高电压转换器硅单片电路数字微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96645 REV B-2005 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS QUAD LOW-TO-HIGH VOLTAGE LEVEL SHIFTER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体四重低到高电压转换器硅单片电路数字微电路》.pdf（23页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R024-98 - cfs. 98-01-16 Monica L. Poelking B Update boilerplate to MIL-PRF-38535 requirements. Editorial changes throughout. jak 05-04-15 Thomas M. Hess REV SHET REV B B B B B B B B SHEET 15 16 17 18 19 20 21 2

2、2 REV STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Larry T. Gauder STANDARD MICROCIRCUIT DRAWING CHECKED BY Monica L. Poelking DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil APPROVED BY Monica L. Poelkin

3、g THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 96-01-17 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, QUAD LOW-TO-HIGH VOLTAGE LEVEL SHIFTER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-96645 SHEE

4、T 1 OF 22 DSCC FORM 2233 APR 97 5962-E121-04 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96645 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SC

5、OPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available

6、, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 96645 01 V X C Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4

7、) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and a

8、re marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 40109B Radiation hardened, CMOS, quad low-to- high voltage level shifter 02 40109BN

9、Radiation hardened, CMOS, quad low-to- high voltage level shifter with neutron irradiated die 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification t

10、o the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descripti

11、ve designator Terminals Package style E CDIP2-T16 16 Dual-in-line X CDFP4-F16 16 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permit

12、ted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96645 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +20.0 V dc DC input voltage range (V

13、IN) -0.5 V dc to VDD+ 0.5 V dc DC input current, any one input (IIN). 10 mA Device dissipation per output transistor . 100 mW Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds). +265C Thermal resistance, junction-to-case (JC): Case outline E 24C/W Case outline

14、X 29C/W Thermal resistance, junction-to-ambient (JA): Case outline E 73C/W Case outline X 114C/W Junction temperature (TJ) +175C Maximum package power dissipation at TA= +125C (PD): 4/ Case outline E 0.68 W Case outline X 0.44 W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC)

15、+3.0 V dc to +18.0 V dc Case operating temperature range (TC). -55C to +125C Input voltage range (VIN) +0.0 V to VDDOutput voltage range (VOUT). +0.0 V to VDDRadiation features: Total dose 1 x 105Rads (Si) Single event phenomenon (SEP) effective linear energy threshold (LET) no upsets or latch-up (s

16、ee 4.4.4.4). 75 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) 5 x 108Rads (Si)/s 5/ Dose rate latch-up . 2 x 108Rads (Si)/s 5/ Dose rate survivability 5 x 1011Rads (Si)/s 5/ Neutron irradiated 1 x 1014neutrons/cm2 6/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the dev

17、ice. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C unle

18、ss otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rate: Case outline E . 13.7 mW/C Case outline X . 8.8 mW/C 5/ Guaranteed by design or process but not tested. 6/ Device type 02 only.

19、Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96645 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specificati

20、on, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535

21、 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawi

22、ngs. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of prec

23、edence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requir

24、ements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described here

25、in. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and p

26、hysical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Termin

27、al connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Block diagram. The block diagram shall be as specified on figure 3. 3.2.5 Irradiation test connections. The irradiation test connections shall be as

28、 specified in table III herein. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating

29、 temperature range. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96645 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 3.4 Electrical test requiremen

30、ts. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where markin

31、g of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535

32、. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PR

33、F-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be requi

34、red from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes

35、 Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendi

36、x A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this dra

37、wing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer.

38、3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 36 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAW

39、ING SIZE A 5962-96645 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Device type Group A subgroups Limits Unit Test conditions -55C TC +125C unless otherwise specified Min Max 1, 3 1

40、/ 1.0 VDD= 5 V VIN= 0.0 V or VDDAll 2 1/ 30.0 1, 3 1/ 2.0 VDD= 10 V VIN= 0.0 V or VDDAll 2 1/ 60.0 1, 3 1/ 2.0 VDD= 15 V VIN= 0.0 V or VDDAll 2 1/ 120 1 2.0 VDD= 20 V VIN= 0.0 V or VDDAll 2 200 M, D, P, L, R 2/ All 1 7.5 Supply current IDDVDD= 18 V, VIN= 0.0 V or VDD3 2.0 A 1 0.53 2 1/ 0.36 VDD= 5.0

41、 V VO= 0.4 V VIN= 0.0 V or VDDAll 3 1/ 0.64 1 1.4 2 1/ 0.9 VDD= 10 V VO= 0.5 V VIN= 0.0 V or VDDAll 3 1/ 1.6 1 3.5 2 1/ 2.4 Low level output current (sink) IOLVDD= 15 V VO= 1.5 V VIN= 0.0 V or VDDAll 3 1/ 4.2 mA 1 -0.53 2 1/ -0.36 VDD= 5.0 V VO= 4.6 V VIN= 0.0 V or VDDAll 3 1/ -0.64 1 -1.8 2 1/ -1.1

42、5 VDD= 5.0 V VO= 2.5 V VIN= 0.0 V or VDDAll 3 1/ -2.0 1 -1.4 2 1/ -0.9 VDD= 10 V VO= 9.5 V VIN= 0.0 V or VDDAll 3 1/ -1.6 1 -3.5 2 1/ -2.4 High level output current (sink) IOHVDD= 15 V VO= 13.5 V VIN= 0.0 V or VDDAll 3 1/ -4.2 mA See footnotes at end of table. Provided by IHSNot for ResaleNo reprodu

43、ction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96645 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Device type Group

44、A subgroups Limits Unit Test conditions -55C TC +125C unless otherwise specified Min Max VDD= 5 V, no load 1/ 1, 2, 3 4.95 VDD= 10 V, no load 1/ 1, 2, 3 9.95 High level output voltage VOHVDD= 15 V, no load 3/ All 1, 2, 3 14.95 V VDD= 5 V, no load 1/ 1, 2, 3 0.05 VDD= 10 V, no load 1/ 1, 2, 3 0.05 Lo

45、w level output voltage VOLVDD= 15 V, no load All 1, 2, 3 0.05 V VDD= 10 V, VCC= 5.0 V VOH 9.0 V, VOL9.0 V, VOL13.5 V, VOL9.0 V, VOL13.5 V, VOLVDD/2 VOL VDD/2V Input capacitance CIN1/ Any input See 4.4.1c All 4 7.5 pF 9 200 Transition time shift mode H-L tTLH1, tTHL14/ VDD= 5.0 V, VIN= VDDor GND VCC=

46、 10 V All 10, 11 270 ns 9 100 Transition time shift mode L-H tTLH2, tTHL24/ VDD= 10 V, VIN= VDDor GND VCC= 5.0 V All 10, 11 135 ns All 9 600 VDD= 10 V, VIN= VDDor GND VCC= 5.0 V All 10, 11 810 Propagation delay time, data in to out shift mode L-H tPHL14/ M, D, P, L, R 2/ All 9 810 ns All 9 260 VDD=

47、10 V, VIN= VDDor GND VCC= 5.0 V All 10, 11 351 Propagation delay time, data in to out shift mode L-H tPLH14/ M, D, P, L, R 2/ All 9 351 ns All 9 460 VDD= 5.0 V, VIN= VDDor GND VCC= 10 V All 10, 11 621 Propagation delay time, data in to out shift mode H-L tPLH24/ M, D, P, L, R 2/ All 9 621 ns All 9 5

48、00 VDD= 5.0 V, VIN= VDDor GND VCC= 10 V All 10, 11 675 Propagation delay time, data in to out shift mode H-L tPHL24/ M, D, P, L, R 2/ All 9 675 ns 9 400 Propagation delay time, 3-state shift mode H-L tPHZ15/ VDD= 5.0 V, VIN= VDDor GND VCC= 10 V All 10, 11 540 ns 9 120 Propagation delay time, 3-state shift mode L-H tPHZ25/ VDD= 10 V, VIN= VDDor GND VCC= 5.0 V All 10, 11 162 ns See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96645 DEFENSE S