DLA SMD-5962-96613 REV B-1997 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS GATED J-K MASTER-SLAVE FLIP-FLOP MONOLITHIC SILICON《抗辐射互补金属氧化物半导体J-K双稳态多谐振荡器硅单片电路数字微电路》.pdf

《DLA SMD-5962-96613 REV B-1997 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS GATED J-K MASTER-SLAVE FLIP-FLOP MONOLITHIC SILICON《抗辐射互补金属氧化物半导体J-K双稳态多谐振荡器硅单片电路数字微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96613 REV B-1997 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS GATED J-K MASTER-SLAVE FLIP-FLOP MONOLITHIC SILICON《抗辐射互补金属氧化物半导体J-K双稳态多谐振荡器硅单片电路数字微电路》.pdf（29页珍藏版）》请在麦多课文档分享上搜索。

1、SND-5962-9bbL3 REV B W 9999796 OLL27L 733 NOTICE OF REVISION (NOR) THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT USTED. 1. DATE (YYMMDD) 97-07-25 ubk reporiing burden for this cdledlon is estimated lo average 2 hours per response, kiduding the time for reviewing istNc(ions, sear

2、ching existing dala 8our?8, gathering and makiteining Ihe data needed, and compleling and reviewing lhe dledian of Information. !%nd commenie regarding this kirden estimate or any other aspect oi this cdlection of infomation, duding suggestions for dudng this burden, lo Deparlmenl of Defense, Washin

3、gtion Headquarters Services, Diredorale for ifomlion Operaiions and Reports, 1215 Jeflemn Davis Highway, Suiie 1204, Atlington, VA 22202-4302, and lo the office ol hagement and add W. Revisions description column; add Changes in acmrdance wHh NOR 5962-Fl389-97. Revisions date column; add 37-07-25. R

4、evision level bb&; add w. Rev status of sheei3; for sheets 21 change from A lo 8“. Rev stetus of sheets; for sheets 22 dienge from A to 8“. Rev stetus of sheets; for sheeta 23 change from A lo 8“. Rev status of sheets; for sheets 24 change from A to 8“. Sheet 21: NOR 596243206-97 sheet 7 of Appendix

5、 A for Die Physical Dimensions for Die Ndviess change from Y1 4-1 mils“ to “20 +/i mils“ Sheet 22: NOR 5962420647 sheel 8 of Appendix A for Itvierface Maleriais for Glassivation Type change from Phosphorous doped SIW to RevisionLevelBlodc diangefmn*AmtoB“ PSG and for Assembly Related Information for

6、 Subslrale Po6ential change from Ti lo VES“ lo Fbalhg or Tied lo VW“ RevisionLevelBlodc changefrom“A“toSm Sheet 23: NOR 596243206-97 sheet 9 of Appendix A for De Physical Dimensions for Die Thiduiess change from 21 +/-i mils“ to “20 41 mils RevisionLevelBlodc changetrOm“AgtaW Sheel 24: NOR 5962-Fl20

7、6-97 sheet 1 O of Appendix A for Interface Materials for Glassivatkm Type change from Phosphorous doped SlO2“ to “PSG * and for Assembly Wted Information for SuRstraie Potential change from = Ti to VES“ lo Fbating or Ti to VOO RevisionLevelBlodf this drawing shall take precedence. 30. REQUIREMENTS 3

8、0.1 Item Requirements. The individual item requirements for device classes Q and V shall be in accordance with JllL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The nodification in the OM plan shall not effect the form, fit or function as

9、 described herein. 30.2 Desiqn. construction and physical dimensions. The design, construction and physical dimensions shall be as specified n MIL-PRF-38535 and the manufacturers QM plan, for device classes Q and V and herein. 30.2.1 Die Physical dimensions. The die physical dimensions shall be as s

10、pecified in 10.2.4.1 and on figures A-1 and A-2. 30.2.2 Die bondinr! pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as ;pecified in 10.2.4.2 and on figures A-I and A-2. 30.2.3 Interface materials. The interface materials for the die shall be a

11、s specified in 10.2.4.3 and on figures A-I and A-2. APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-96613 Document No: 5962-9661 3 Revision: A Sheet: 4 of 10 NOR NO: 5962-R206-97 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO 4321 6-5000 I A I 18 DESC FORM 193A JUL 94 Pr

12、ovided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-96613 Document No: 5962-96613 Revision: A Sheet: 5 of 10 NOR NO: 5!362-R206-97 30.2.4 Assembly related information. The assembly related information shall be

13、 as specified in 10.2.4.4 and figures A-1 and r2. 30.2.5 Truth table(s). The truth table(s) shall be as defined within paragraph 3.2.3 of the body of this document. 30.2.6 Radiation exposure circuit. The radiation exposure circuit shall be as defined within paragraph 3.2.4 of the body of this ocumen

14、t. 30.3 Electrical performance characteristics and post-irradiation Parameter limits. Unless otherwise specified herein, the lectrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this ocument. 30.4 Electrical test requirements. The waf

15、er probe test requirements shall include functional and parametric testing sufficient 30.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer, ) make the packaged die capable of meeting the electrical performance requirements in

16、table I. hall be identified with the wafer lot number, the certification mark, the manufacturers identification and the PIN listed in 10.2 erein. The certification mark shall be a “QM” or “Q” as required by MIL-PRF-38535. 30.6 Certification of compliance. For device classes Q and V, a certificate of

17、 compliance shall be required from a 1ML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 60.4 herein). The certificate of impliance submitted to DSCC-VA prior to listing as an approved source of supply for this appendix shall affirm that the ianufacturers produc

18、t meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein. 30.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall 3 provided with each lot of microcircuit die delivered to this drawing. 40.

19、QUALITY ASSURANCE PROVISIONS 40.1 Samplina anu inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance ith MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modifications in the QM Ian shall not effect the form, f

20、it or function as described herein. 40.2 Screeninq. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the ianufacturers QM plan. As a minimum it shall consist of: a) Wafer Lot acceptance for Class V product using the criteria defined within MIL-STD-88

21、3 TM 5007. b) 100% wafer probe (see paragraph 30.4). c) 100% internal visual inspection to theapplicable class Q or V criteria defined within MIL-STD-883 TM2010 or the alternate procedures allowed within MIL-STD-883 TM5004. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO

22、 43216-5000 SIZE A 5962-96613 I SHEET19 I REVISION LEVEL A DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-96613 Document No: 5962-9661 3 Revision: A Sheet: 6 of 10 NOR NO: 5962-R20

23、6-97 40.3 Conformance inspection. 40.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see 3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of sckaged die shall

24、be as specified in table IIA herein. Group E tests and conditions are as specified within paragraphs 4.4.4.1, 4.4.1.1, 4.4.4.2, 4.4.4.3 and 4.4.4.4. 50. DIE CARRIER 50.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturers QM plan or c specified i

25、n the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and ectrostatic protection. 60. NOTES 60.1 intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with Ill-PRF-38535 or MIL-PRF-385

26、34 for government microcircuit applications (original equipment), design applications and lgistics purposes. 60.2 Comments. Comments on this appendix should be directed to DSCC-VA, Columbus, Ohio, 43216-5000 or telephone i14)-692-0536. 60.3 Abbreviations. symbols and definitions. The abbreviations,

27、symbols, and definitions used herein are defined with llL-PRF-38535 and MIL-STD-1331. 60.4 Sources of Supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535. he vendors listed within QML-38535 have submitted a certificate of compliance (see 30.6 herei

28、n) to DSCC-VA and have agreed )this drawing. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO 43216-5000 A I 5962-9661 3 I SHEET20 1 REVISION LEVEL A DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-AP

29、PENDIX A j APPENDIX A FORMS A PART OF SMD 5962-96613 FIGURE A-I o DIE PHYSICAL DIMENSIONS Die Size: Die Thickness: 21 +/-I mils. 1651 x 1880 microns. o DIE BONDING PAD LOCATIONS AND ELECTRICAL FUNCTIONS 74 o IO 20 30 40 50 60 701 Document No: 5962-9661 3 Revision: A Sheet: 7 of 10 NORNO: 5962-R206-9

30、7 65 60 50 40 30 20 IO O II I L-. 71-79 .-,I (1.803 - 2.007) 62 (1.575 i - 70 - 1.778) NOTE: Pad numbers reflect terminal numbers when placed in Case Outlines C, X (see Figure 1). STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO 43216-5000 5962-9661 3 I sHEET21 1 REVISION

31、 LEVEL A DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-. SMD-59b2-9bb13 REV A = 9999796 0094bL T3L D APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-96613 Document No: 5962-9661 3 Revision: A Sheet: 8 of 10 NOR NO: 5962-R206-97

32、 o INTERFACE MATERIALS Top Metallizatioii: AI 11 .OkA - 14.0kA Backside Metallization: None. Glassivation Type: Phosphorous doped Si02 Thickness: 10.4kA - 15.6kA Substrate: Single crystal silicon. o ASSEMBLY RELATED INFORMATION Substrate Potential: Tied to VSS. Special assembly instructions: Bond pa

33、d #I4 (VDD) first. STAN DARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO 4321 6-5000 5962-96613 1 SHEET 1 REVISION LEVEL A 22 DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SHD-5962-9bbL3 REV A 999999b 0

34、094b92 978 D Document No: 5962-9661 3 Revision: A Sheet: 9 of 10 NOR NO: 5962-R206-97 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-96613 FIGURE A-2 o DIE PHYSICAL DIMENSIONS SIZE A STAN DARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A Die Size: D

35、ie Thickness: 5962-9661 3 SHEET 23 1651 x 1880 microns. 21 +/-I mils. O IO 20 30 40 50 60 701 74 4- IO (0.102 - 0.254) 1: 7 I - 79 I (l. 803 - 2,007) NOTE: Pad numbers reflect terminal numbers when placed in Case Outlines C, X (see Figure 1). . Provided by IHSNot for ResaleNo reproduction or network

36、ing permitted without license from IHS-,-,-REVISION LEVEL A SMD-59b2-9bbL3 REV A b 0094693 804 SHEET 24 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-96613 o INTERFACE MATERIALS Top Metallization: AI 1 I .OkA - 14.0kA Backside Metallization: None. Glassivation Type: Phosphorous doped Si02 Thickness

37、: 10.4kA - 15.6kA Substrate: Single crystal silicon. o ASSEMBLY RELATED INFORMATION Substrate Potential: Tied to VSS. Special assembly instructions: Bond pad #I4 (VDD) first. Document No: 5962-96613 Revision: A Sheet: 10 of 10 NOR NO: 5962-R206-97 STAN DARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER

38、, COLUMBUS COLUMBUS, OHIO 43216-5000 SIZE A 5962-9661 3 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-9bbL3 REV A 9999996 0094694 740 W Standard microcircuit drawing PIN STANDARD MICROCIRCUIT DRAWING BULLETIN Vendor CAGE number DATE: 97-03

39、-14 Approved sources of supply for SMD 5962-96613 are listed below for immediate acquisition information only and shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised to include the addition or deletion of sources. The vendors listed below

40、 have agreed to this drawing and a certificate of compliance has been submitted to and accepted by DSCC-VA. This bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. Vendor similar PIN li I I I 1 I I I 5962R9661301V9A I 34371 I CD4095BHSR I I I I I I I 1 5962R9661302V9A I

41、 34371 I CD4096BHSR I - 11 Caution. Do not use this number for item acquisition. Items acquired to this number may not satisfy the performance requirements of this drawing. Vendor CAGE number 34371 Vendor name and address Harris Semiconductor P.O. Box 883 Melbourne, FL 32902-0883 The information con

42、tained herein is disseminated for convenience only and the Government assumes no liability whatsoever for any inaccuracies in the information bulletin. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59b2-9bbL3 9999996 008YY99 562 LTR I 1 DESCRIP

43、TION DATE AFPROUW, I PMIC NIA REV SHEET REV SHEET REV STATUS OF SHEETS I STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC NIA I DESC FORM 193 JUL 94 SHEET 123 PREPAREDBY Joseph A. Kerby CHECKED BY Monica L.Poelking APPR

44、OVED BY Monica L. Poelking DRAWING APPROVAL DATE 96-01 -09 REVISION LEVEL DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, MONOLITHIC SILICON CMOS, GATED J-K MASTER-SLAVE FLIP-FLOP, 1 5962-96613 SIZE A SHEET 1 OF 14 DISTRIBUTION STATEMENT A Approved for

45、 public release, distribution is unlimited - 5962-E224-96 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-9bbL3 9999996 0084500 004 W STANDARD MIC ROC I RC U IT DRAW I NG DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 I 1. SCOPE 1.1 w.

46、 This drawing forins a part of a one part - one pert nuiar docmentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes and M) and space application (device class V), and a choice of case outlines and lead finishes are available and are

47、reflected in the Part or Identifying Nunber (PIN). Device class n microcircuits represent non-JAN class 6 microcircuits in accordance with 1.2.1 of MIL-STO-683, aPrwisiarts for the use of MIL-STD-863 in ccmjurctim with colpliant non-JAU dCviceP. Yha available, a choice of Radiation Hardness Assuranc

48、e (RHA) levels are reflected in the PIN. I 1.2 u. lhe PIN shall be as showi in the following exaple: XLfLL Feeral RHA Device Device Case Lead stock class designator type class outline finish desimator (see 1.2.1) (see 1.2.2) designstor (see 1.2.4) (see 1.2.5) LU (see 1.2.3) V Drawing nunkr 1.2.1 des

49、i- . Device class M RHA marked devices shall meet the MIL-1-38535 appendix A specified RHA levels and shall be marked with the apprcpriate RHA designator. MIL-1-38535 specified RHA levels and shall be marked with the appropriate RHA designator. non-RHA device. Device classes O and V RHA marked devices shall meet the A dash (-) indica