DLA SMD-5962-96611 REV C-2004 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS QUAD EXCLUSIVE OR AND EXCLUSIVE NOR GATES MONOLITHIC SILICON《抗辐射互补金属氧化物半导体四重排外或与门硅单片电路数字微电路》.pdf

《DLA SMD-5962-96611 REV C-2004 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS QUAD EXCLUSIVE OR AND EXCLUSIVE NOR GATES MONOLITHIC SILICON《抗辐射互补金属氧化物半导体四重排外或与门硅单片电路数字微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96611 REV C-2004 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS QUAD EXCLUSIVE OR AND EXCLUSIVE NOR GATES MONOLITHIC SILICON《抗辐射互补金属氧化物半导体四重排外或与门硅单片电路数字微电路》.pdf（23页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R207-97. 97-03-14 Monica L. Poelking B Changes in accordance with NOR 5962-R387-97. 97-07-25 Raymond Monnin C Incorporate revisions A and B. Update boilerplate to MIL-PRF-38535 requirements. Editorial changes t

2、hroughout. LTG 04-02-02 Thomas M. Hess REV SHET REV C C C C C C C C SHEET 15 16 17 18 19 20 21 22 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Dan Wonnell STANDARD MICROCIRCUIT DRAWING CHECKED BY Monica L. Poelking DEFENSE SUPPLY CE

3、NTER COLUMBUS COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-12-05 MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, QUAD EXCLUSIVE OR AND EXCLUSIVE NOR G

4、ATES, MONOLITHIC SILICON AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-96611 SHEET 1 OF 22 DSCC FORM 2233 APR 97 5962-E130-04 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license

5、from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96611 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) a

6、nd space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following ex

7、ample: 5962 R 96611 01 V X C Federal stock class designator RHA designator (see 1.2.1) Devicetype (see 1.2.2) Device class designator Caseoutline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535

8、specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) ident

9、ify the circuit function as follows: Device type Generic number Circuit function 01 4070B Radiation hardened CMOS, quad exclusive OR gate 02 4077B Radiation hardened CMOS, quad exclusive NOR gate 03 4070BN Radiation hardened CMOS, quad exclusive OR gate with neutron irradiated die 04 4077BN Radiatio

10、n hardened CMOS, quad exclusive NOR gate with neutron irradiated die 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MI

11、L-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals P

12、ackage style C CDIP2-T14 14 Dual-in-line package X CDFP3-F14 14 Flat package 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without li

13、cense from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96611 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.5 V dc to +20 V dc Input voltage range . -0.5 V dc to VDD+ 0

14、.5 V dc DC input current, any one input . 10 mA Device dissipation per output transistor . 100 mW Storage temperature range (TSTG) -65C to +150C Lead temperature (soldering, 10 seconds) +265C Thermal resistance, junction-to-case (JC): Case C 24C/W Case X 30C/W Thermal resistance, junction-to-ambient

15、 (JA): Case C 74C/W Case X 116C/W Junction temperature (TJ). +175C Maximum power dissipation at TA= +125C (PD): 4/ Case C 0.68 W Case X 0.43 W 1.4 Recommended operating conditions. Supply voltage range (VDD) 3.0 V dc to +18 V dc Case operating temperature range (TC). -55C to +125C Input voltage (VIN

16、) 0 V to VDDOutput voltage (VOUT). 0 V to VDDRadiation features: Total dose . 1 x 105Rads (Si) Single event phenomenon (SEP) effective linear energy threshold, no upsets or latchup (see 4.4.4.5) 75 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) . 5 x 108 Rads(Si)/s 5/ Dose rate latch-up 2 x 108Rads(S

17、i)/s 5/ Dose rate survivability 5 x 1011Rads(Si)/s 5/ Neutron irradiated 1 x 1014neutrons/cm26/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless oth

18、erwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General

19、 Specification for. 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to VSS. 3/ The limits for the parameters spe

20、cified herein shall apply over the full specified VDDrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rate: Case C. 13.5 mW/C Cas

21、e X. 8.6 mW/C 5/ Guaranteed by design or process but not tested. 6/ Device types 03 and 04 only. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96611 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000

22、REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 -

23、 Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between t

24、he text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for

25、 device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for dev

26、ice class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction

27、, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections sha

28、ll be as specified on figure 1. 3.2.3 Truth tables. The truth tables shall be as specified on figure 2. 3.2.4 Radiation test connections. The radiation test connections shall be as specified in table III herein. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless

29、otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified

30、in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasib

31、le due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in acc

32、ordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. Provided by IHSNot for

33、ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96611 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.6 Certificate of compliance. For device classes Q and V, a certificate

34、of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103

35、(see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements

36、 of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notificati

37、on of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A. 3.9 Verification and review for device class M. For device class M, DSCC,

38、DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices co

39、vered by this drawing shall be in microcircuit group number 36 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96611 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 R

40、EVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limits Test Symbol Conditions -55C TC +125C unless otherwise specified Device type Group A subgroups Min Max Units 1, 3 1/ 1.0 VDD= 5 V VIN= 0.0 V or VDDAll 2 1/ 30 1, 3 1/ 2 VDD= 10 V VIN= 0.0 V or VDDAll

41、 2 1/ 60 1, 3 1/ 2 VDD= 15 V VIN= 0.0 V or VDDAll 2 1/ 120 1 2 VDD= 20 V, VIN= 0.0 V or VDDAll 2 200 M, D, P, L, R 2/ All 1 7.5 Supply current IDDVDD= 18 V, VIN= 0.0 V or VDDAll 3 2 A 1 0.53 2 1/ 0.36 VDD= 5 V VO= 0.4 V All 3 1/ 0.64 1 1.4 2 1/ 0.9 VDD= 10 V VO= 0.5 V All 3 1/ 1.6 1 3.5 2 1/ 2.4 Low

42、 level output current (sink) IOLVDD= 15 V VO= 1.5 V All 3 1/ 4.2 mA See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96611 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-500

43、0 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Limits Test Symbol Conditions -55C TC +125C unless otherwise specified Device type Group A subgroups Min Max Units 1 -0.53 2 1/ -0.36 VDD= 5 V VO= 4.6 V All 3 1/ -0.64 1 -1.8 2 1/ -1.15 VDD= 5

44、 V VO= 2.5 V All 3 1/ -2.0 1 -1.4 2 1/ -0.9 VDD= 10 V VO= 9.5 V All 3 1/ -2.6 1 -3.5 2 1/ -2.4 High level output current (source) IOHVDD= 15 V VO= 13.5 V All 3 1/ -4.2 mA VDD= 5 V, no load 1/ 1, 2, 3 4.95 VDD= 10 V, no load 1/ 1, 2, 3 9.95 Output voltage, high VOHVDD= 15 V, no load 3/ All 1, 2, 3 14

45、.95 V VDD= 5 V, no load 1/ 1, 2, 3 50 VDD= 10 V, no load 1/ 1, 2, 3 50 Output voltage, low VOLVDD= 15 V, no load All 1, 2, 3 50 mV VDD= 5 V VOH 4.5 V, VOL9.0 V, VOL13.5 V, VOL4.5 V, VOL9.0 V, VOL13.5 V, VOLVDD/2 VOL VDD/2 V See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction

46、or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96611 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 9 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Limits Test Symbol Conditions -55C T

47、C +125C unless otherwise specified Device type Group A subgroups Min Max Units 9 280 VDD= 5.0 V, VIN= VDDor GND All 10, 11 378 M, D, P, L, R 2/ All 9 378 VDD= 10 V 9 1/ 130 Propagation delay time, any input to output 4/ tPHL, tPLHVDD= 15 V All 9 1/ 100 ns 9 200 VDD= 5.0 V, VIN= VDDor GND 10, 11 270

48、VDD= 10 V 9 1/ 100 Transition time 4/ tTLH, tTHLVDD= 15 V All 9 1/ 80 ns 1/ These tests are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which affect these characteristics. 2/ Devices supplied to this drawing will meet all levels M, D, P, L, R of irradiation. However, this device is only tested at the R level. When performing post irradiation electrical measurements for any RHA level, TA= +25C. 3/ For accuracy, voltage is measured differe