DLA SMD-5962-96606 REV B-1997 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS QUAD D-TYPE FLIP-FLOP MONOLITHIC SILICON《抗辐射互补金属氧化物半导体四角D类双稳态多谐振荡器硅单片电路数字微电路》.pdf

《DLA SMD-5962-96606 REV B-1997 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS QUAD D-TYPE FLIP-FLOP MONOLITHIC SILICON《抗辐射互补金属氧化物半导体四角D类双稳态多谐振荡器硅单片电路数字微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96606 REV B-1997 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS QUAD D-TYPE FLIP-FLOP MONOLITHIC SILICON《抗辐射互补金属氧化物半导体四角D类双稳态多谐振荡器硅单片电路数字微电路》.pdf（27页珍藏版）》请在麦多课文档分享上搜索。

1、SHD-5962-96606 REV B m 9999996 0338076 552 m NOTICE OF REVISION (NOR) THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED. 1. DATE (YYMMDD) 97-08-1 8 ublic reporting burden for this collection is estimated to average 2 hours per response, including the time for reviewing istruc

2、tions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the ollection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, icluding suggestions for reducing this burden, to Departme

3、nt of Defense, Washingtion Headquarters Services, Directorate for iformation Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and to the Office of hanagement and Budget, Paperwork Reduction Project (0704-0188), Washington, DC 20503,PLEASE DO NOT RETURN OUR

4、COMPLETED FORM TO EITHER OF THESE ADDRESSES. RETURN COMPLETED FORM TO THE GOVERNMENT CSUING CONTRACTING OFFICER FOR THE CONTRACT/ PROCURING ACTIVITY NUMBER LISTED IN ITEM 2 OF THIS ORM. a (XOne) b. ADDRESS (Street, Cify, State, Zip Code) I. ORIGINATOR Defense Supply Center Columbus 3990 East Broad S

5、treet Last) Columbus, OH 43216-5000 X (1) Existing document supplemented by the NOR may be used in manufacture. (2) Revised document must be received before manufacturer may incorporate this change. (3) Custodian of master document shall make above revision and iumish revised document. 5. CAGE CODE

6、67268 67268 b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FOR GOVERNMENT DSCC-VA 3. TITLE OF DOCUMENT dICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, QUAD D-TYPE LIP-FLOP, MONOLITHIC SILICON c. TYPED NAME (First, Middle Initial, Last) 1 O. REVISION LEVER a. CURRENT b. NEW d. TITLE e. SIGNATURE Chief, Cu

7、stom Microelectronics RAYMOND MONNIN 15a. ACTIVITY ACCOMPLISHING REVISION b. REVISION COMPLETED (Signature) DSCC-VA RONALD COUCH 12. CONFIGURATION ITEM (OR SYSTEM) TO WHICH ECP APPLIES All f. DATE SIGNED (Y YMMDD) 97-08-1 8 c. DATE SIGNED (YYMMDD) 97-08-1 8 I Form Approved OMB No. 0704-0188 2. PROCU

8、RING ACTIVITY NO. 3. DODAAC 6. NOR NO. 5962-RU-97 8. DOCUMENT NO. 5962-96606 11. ECPNO. No users listed. 13. DESCRIPTION OF REVISION Sheet 1 : Revisions Itr column; add “B“. Revisions description column; add “Changes in accordance with NOR 5962-R444-97“. Revisions date column; add “97-08-18“. Revisi

9、on level block: add “B“. Rev status of sheets; for sheets 21 change from “A to “B“. Rev satus of sheets; for sheets 22 change from “A“ to “B“. Sheet 21: NOR 596243223-97 sheet 7 of Appendix A for Die Physical Dimensions for Die Thickness change from “21 f 1 mils“ to “20 f 1 mils“ Sheet 22: NOR 59624

10、3223-97 sheet 8 of Appendix A for Interface Materials for Glassivation Type change from “Phosphorous doped SIOZ“ to Revision Level Block change from “A“ to “8“ “PSG and for Assembly Related Information for Substrate Potential change from u Tied to VSS“ to “Floating or Tied to VDO Revision Level Bloc

11、k: change from “A“ to “B“ 12. THIS SECTION FOR GOVERNMENT USE ONLY DD Form 1695, APR 92 Previous editions are obsolete. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59b2-7bb0b REV A m 99997b 0094b23 490 m DEFENSE LOGISTICS AGENCY DEFENSE SUPPL

12、Y CENTER COLUMBUS 3990 EAST BROAD STREET COLUMBUS, OH 43216-5000 IN REPLY awwt TO: DSCC-V, .C(h *. Saffle/(DSN)850-0540/6 14-692-0540) APROOl967 SUBJECT: Notice of Revision (NOR) 5962-R223-97 for Standard Microcircuit Drawing (SMD) 5962-96606 MilitaqdIndustry Distribution The enclosed NOR is approve

13、d for use effective as of the date of the NOR. In accordance with MIL-STD-100, SMD holders should, as a minimum, handwrite those changes described in the NOR to sheet 1 of the subject SMD. After completion, the NOR should be attached to the subject SMD for future reference. Those companies who were

14、listed as approved sources of supply prior to this action have agreed to actions taken on devices for which they had previously provided DSCC a Certificate of compliance. This is evidenced by an existing active current certificate of compliance on file at DSCC with a DSCC record of verbal coordinati

15、on. The certificate of compliance for these devices is considered concurrence with the new revision unless DSCC is otherwise notified. The vendor, Harris Semiconductor (34371) is added to the subject SMD as a supplier for die part number 5962R9660601V9A. The next update of MIL-HDBK-103 will reflect

16、this information. If you have comments or questions, please contact Charles Saffle at (DSN)850-0540/(614)692-0540. 1 Encl. MONICA L. POELKING Chief, Custom Microelectronics Team Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SND-5962-76606 REV A 999

17、9996 0094624 327 NOTICE OF REVISION (NOR) THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED. 1. DATE (YYMMDD) Form Appmved 97-02-28 OM6 No. 0704-0188 I. ORIGINATOR b. ADDRESS (Street, City, State, Zip code) 5. CAGE CODE Defense Supply Center, Columbus 67268 3990 East Broad St

18、reet Columbus, OH 43216-5000 i. TYPED NAME (First, Middle initiai, . TITLE OF WCUMENT Last) 3. DODAAC 6. NOR NO. 5962-R223-97 7. CAGE CODE 67268 I 8. DOCUMENT NO. 5962-96606 11. ECP NO. MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, QUAD I 10. REVISION LETTER )-TYPE FLIP-FLOP, MONOLITHIC SILICON a.

19、 CURRENT b. NEW A Sheet 1: Revisions Itr column; add “A. Revisions description column; add “Changes in accordance with NOR 5962-R223-97“. Revisions date column; add “9742-26. Revision level block; add “A“. Rev status of sheets; for sheets 1,4, and 16through 22, add “A. Sheet 4: Add new paragraph whi

20、ch states; “3.1 1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document.“ Revision level block; add “A“. Sheets 16 through 22: Add attached appendix A CONTINUED ON NEXT SHEET 14. THIS SECTION FOR GOVERNMENT USE ONLY (i) Existing document supplemented by the NOR

21、 may be used in manufacture (2) Revised document must be received before manufacturer may incorporate this change. GOVERNMENT DSCC-VAC I MONICA L. POELKING d. TITLE CHIEF, CUSTOM MICROELECTRONICS TEAM 15a. ACTIVITY ACCOMPLISHING REVISION DSCC-VAC - DD Form 1695, APR 92 e. SIGNATURE MONICA L. POELKIN

22、G - - b. REVISION COMPLETED (Signatoi) CHARLES F. SAFFLE, JR. Previous editions am obsolete. f. DATE SIGNED (YYMMDD) 97-02-28 c. DATE SIGNED (YYMMDD) 97-02-28 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SflD-59b2-bbOb REV A = b 0094625 2b3 APPEND

23、IX A APPENDIX A FORMS A PART OF SMD 5962-96606 Document No: 5962-96606 Revision: A NOR NO: 5962-R223-97 10. SCOPE 10.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified anufacturers List (QML) Program, QML microcircuit die meeting the requi

24、rements of MIL-PRF-38535 and the manufacturers ,proved QM plan for use in monolithic microcircuits, muttichip modules (MCMs), hybrids, electronic modules, or devices using iip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting Of ilitary

25、high reliability (device class Q) and space application (device Class V) are reflected in the Part or Identification Number IN). When available a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN. 10.2 m. The PIN shall be as shown in the following example: Federal RHA Sto

26、ck dass designator designator (see 10.2.1) Device Device Die Die tY Pe dass code Details (see 10.2.2) designator (see 10.2.4) (see 10.2.3) Drawing Number 10.2.1 RHA desimator. Device classes Q and V RHA identified die shall meet the MIL-PRF-38535 specified RHA levels. A ash (-) indicates a non-RHA d

27、ie. 10.2.2 Device tvDe(s). The device type(s) shall identify the circuit function as follows: Device tvpe Generic number Circuit function O1 401758 Radiation Hardened, CMOS, quad D-type nip flop 10.2.3 Device class desimator. Device class Device reauirements documentation QorV Certification and qual

28、ification to the die requirements of MIL-PRF-38535. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO 43216-5000 SIZE A 5962-96606 I REVISION LEVEL 1 SHEET A 16 DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from

29、IHS-,-,-SMD-5962-9bbOb REV A = 9999996 0094626 LTT = I REVISION LEVEL A APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-96606 SHEET 17 Document No: 5962-96606 Revision: A Sheet: 3 o 8 NOR NO: 5962-R223-97 10.2.4 Die Details. The die details designation shall be a unique letter which designates the di

30、es physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product and variant supplied lo this appendix. 10.2.4.1 Die Physical dimensions. Die Type Fiaure number I o1 A- 1 10.2.4.2 Die Bondina Dad locatio

31、ns and Electrical functions. Die Tye Figure number O1 A- 1 10.2.4.3 Interface Materials. Die TvDe Finure number o1 A-1 I 10.2.4.4 Assemblv related information. O1 A-1 10.3 Absolute maximum ratings. See paragraph 1.3 within the body of this drawing for details. I 10.4 Recommended operatina conditions

32、. See paragraph 1.4 within the body of this drawing for details. 20. APPLICABLE DOCUMENTS 20.1 Government specifications. standards, bulletin. and handbooks. Unless otherwise specified, the following SpecificatiOnS. standards, bulletin, and handbook of the issue listed in that issue of the Departmen

33、t of Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein. SPECIFICATION MILITARY MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. SIZE A STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENT

34、ER, COLUMBUS COLUMBUS, OHIO 43216-5000 5962-96606 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SUD-5762-96606 REV A = 9999996 O094627 036 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-96606 Document No: 5962-96606 Revision: A Sheet: 4 of 8 NOR NO

35、: 5962-R223-97 STANDARDS REVISION LEVEL A MIL-STD-883 - Test Methods and Procedures for Microelectronics. SHEET 18 HANDBOOK MILITARY MIL-HDBK-103 - List of Standardized Military Drawings (SMDs). :opies of the specification, standards, bulletin, and handbook required by manufacturers in connection wi

36、th specific acquisition inctions should be obtained from the contracting activity or as directed by the contracting activity). 20.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text f this drawing shall take precedence. 30. REQ

37、UIREMENTS 30.1 Item Reauirements. The individual item requirements for device classes Q and V shall be in accordance with ill-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The iodification in the QM plan shall not effect the form, fit or f

38、unction as described herein. 30.2 pesian. construction and Dhvsical dimensions. The design, construction and physical dimensions shall be as specified 1 MIL-PRF-38535 and the manufacturers QM plan, for device classes Q and V and herein. 30.2.1 Die Physical dimensions. The die physical dimensions sha

39、ll be as specified in 10.2.4.1 and on figure A-I. 30.2.2 Die bondina Dad locations and electrical functions. The die bonding pad locations and electrical functions shall be as pecified in 10.2.4.2 and on figure A-I. 30.2.3 Interface materials. The interface materials for the die shall be as specifie

40、d in 10.2.4.3 and on figure A-I . 30.2.4 Assembly related information. The assembly related information shall be as specified in 10.2.4.4 and figure A-I. 30.2.5 Truth tablels). The truth table($) shall be as defined within paragraph 3.2.3 of the body of this document. 30.2.6 Radiation exDosure circu

41、it. The radiation exposure circuit shall be as defined within paragraph 3.2.5 of the body of this ocument. 30.3 Electrical Performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the lectrical performance characteristics and post-irradiation parameter li

42、mits are as specified in table I of the body of this ocument. SIZE 5962-96606 A STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO 43216-5000 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SND-59b2-9bbOb REV A 9999996 0094b

43、28 T72 30.4 Electrical test reauirements. The wafer probe test requirements shall include functional and parametric testing sufficient to make the packaged die capable of meeting the electrical performance requirements in table I. shall be identified with the wafer lot number, the certification mark

44、, the manufacturers identification and the PIN listed in 10.2 herein. The certification mark shall be a QM or Q“ as required by MIL-PRF-38535. 30.6 Certification of comDliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to

45、supply to the requirements of this drawing (see 60.4 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this appendix shaH affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the

46、requirements herein. be provided with each lot of microcircuit die delivered to this drawing. 30.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer, 30.7 Certificate of conformance. A certificate of conformance as required for

47、device classes Q and V in MIL-PRF-38535 shall 40. QUALITY ASSURANCE PROVISIONS 40.1 SamDlina and inspection. For device classes Q and V, die sampting and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modif

48、ications in the QM plan shall not effect the form, fit or function as described herein. 40.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the manufacturers QM plan. As a minimum it shall consist of a) Wafer Lot acceptance for Class V p

49、roduct using the criteria defined within MIL-STD-883 TM 5007. b) 100% wafer probe (see paragraph 30.4). c) 100% internal visual inspection to the applicable class Q or V criteria defined within MIL-STD-883 TM2010 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-96606 40.3 Conformance inspection. 40.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (se