DLA SMD-5962-96561 REV D-2013 MICROCIRCUIT DIGITAL ADVANCED CMOS RADIATION HARDENED 4-BIT UP DOWN BINARY SYNCHRONOUS COUNTER TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf
《DLA SMD-5962-96561 REV D-2013 MICROCIRCUIT DIGITAL ADVANCED CMOS RADIATION HARDENED 4-BIT UP DOWN BINARY SYNCHRONOUS COUNTER TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-96561 REV D-2013 MICROCIRCUIT DIGITAL ADVANCED CMOS RADIATION HARDENED 4-BIT UP DOWN BINARY SYNCHRONOUS COUNTER TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf(17页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R107-97. CFS 96-11-18 Monica L. Poelking B Incorporate Revision A and update boilerplate to MIL-PRF-38535 requirements. LTG 01-11-01 Thomas M. Hess C Correct title to more accurately describe the function. Upda
2、te radiation features in section 1.5 and RHA paragraphs in section 4. Update the boilerplate paragraphs to current requirements as specified in MIL-PRF-38535. jak 10-01-20 Thomas M. Hess D To correct switching waveforms input/output test limits to figure 4. Add test equivalent circuits and footnote
3、4 to figure 4. Delete class M requirements throughout.MAA 13-01-25 Thomas M. Hess REV SHEET REV D D SHEET 15 16 REV STATUS REV D D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh V. Nguyen DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.l
4、andandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, 4-BIT UP/DOWN BINARY SYNCHR
5、ONOUS COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON DRAWING APPROVAL DATE 96-04-19 REVISION LEVEL D SIZE A CAGE CODE 67268 5962-96561 SHEET 1 OF 16 DSCC FORM 2233 APR 97 5962-E185-13Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROC
6、IRCUIT DRAWING SIZE A 5962-96561 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choi
7、ce of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example 5962 H 96561 01 V X C Federal RHA Device
8、 Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the
9、appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ACTS169 Radiation hardened, 4-bit up/down binary synchronous counter, TTL compatible inputs 1.2.3 Dev
10、ice class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outlines. The case outlines are as designated in MIL-STD-1835 and
11、 as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line X CDFP4-F16 16 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. Provided by IHSNot for ResaleNo reproduction or networking perm
12、itted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96561 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.3 V dc to +7.0 V dc DC input voltage range (VIN) -0.3
13、 V dc to VDD+ 0.3 V dc DC output voltage range (VOUT) . -0.3 V dc to VDD+ 0.3 V dc DC input current, any one input (IIN). 10 mA Latch-up immunity current (ILU) 150 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 5 seconds) +300C Thermal resistance, junction-to-case (
14、JC) . See MIL-STD-1835 Junction temperature (TJ) +175C Maximum package power dissipation (PD) . 1.0 W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VDD) +4.5 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to VDDOutput voltage range (VOUT). +0.0 V dc to VDDCase operating te
15、mperature range (TC) . -55C to +125C Maximum input rise or fall rate at VDD= 4.5 V (tr, tf) . 1 ns/V 4/ 1.5 Radiation features. 5/ Maximum total dose available (dose rate = 50 300 rads (Si)/s) 1 x 106Rads (Si) Single event phenomenon (SEP): No SEU occurs at effective LET (see 4.4.4.4) . 80 MeV/(mg/c
16、m2) 6/ No SEL occurs at effective LET (see 4.4.4.4) . 120 MeV/(mg/cm2) 6/ Dose rate induced upset (20 ns pulse) 1 x 109Rads (Si)/s 6/ Latch-up . None 6/ Dose rate survivability 1 x 1012Rads (Si)/s 6/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended ope
17、ration at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VDDrange and case temperature range of -55C to +125C unless otherwise note
18、d. 4/ Derate system propagation delays by difference in rise time to switch point for tror tf 1 ns/V. 5/ Radiation testing is performed on the standard evaluation circuit (SEC). 6/ Limits are guaranteed by design or process, but not production tested unless specified by the customer through the purc
19、hase order or contract. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96561 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Governm
20、ent specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIO
21、N MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Mic
22、rocircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. Th
23、e following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) In
24、duced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at https:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text o
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